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1. 发明申请

WO2010062918A2 CONFINEMENT OF FOAM DELIVERED BY A PROXIMITY HEAD 审中-公开
标题翻译：通过近接头提供的泡沫的约束
公开(公告)号：WO2010062918A2
公开(公告)日：2010-06-03
申请号：PCT/US2009/065812
申请日：2009-11-24
申请人： LAM RESEARCH CORPORATION , KHOLODENKO, Arnold , LIN, Cheng-Yu, Sean , GINZBURG, Leon , MANDELBOYM, Mark , TOMASCH, Gregory, A. , HUSAIN, Anwar
发明人： KHOLODENKO, Arnold , LIN, Cheng-Yu, Sean , GINZBURG, Leon , MANDELBOYM, Mark , TOMASCH, Gregory, A. , HUSAIN, Anwar
IPC分类号： H01L21/302
CPC分类号： H01L21/6704 , B08B3/003 , C11D11/0047 , C11D11/0058 , H01L21/67051 , H01L21/67057 , H01L21/6719 , H01L21/6776
摘要： In an example embodiment, a linear wet system includes a carrier and a proximity head in a chamber. The proximity head includes three sections in a linear arrangement. The first section suctions liquid from the upper surface of a semiconductor wafer as the wafer is transported by the carrier under the proximity head. The second section is configured to cause a film (or meniscus) of cleaning foam which is a non-Newtonian fluid to flow onto the upper surface of the wafer. The third section is configured to cause a film of rinsing fluid to flow onto the upper surface of the wafer as the wafer is carried under the proximity head. The third section is defined partially around the second section and up to the first section, so that the third section and the first section create a confinement of the cleaning foam with respect to the chamber.
摘要翻译：在示例性实施例中，线性湿系统包括腔室中的载体和临近头。临近头包括三个线性排列的部分。当晶片由邻近头下的载体传送时，第一部分从半导体晶片的上表面抽吸液体。第二部分构造成使非牛顿流体的清洁泡沫的膜（或弯液面）流到晶片的上表面上。第三部分被配置成当晶片在邻近头下被携带时使漂洗流体膜流到晶片的上表面。第三部分被部分地限定在第二部分周围并且一直到第一部分，使得第三部分和第一部分形成清洁泡沫相对于腔室的限制。

2. 发明申请

WO2010002905A1 SINGLE SUBSTRATE PROCESSING HEAD FOR PARTICLE REMOVAL USING LOW VISCOSITY FLUID 审中-公开
标题翻译：使用低粘度流体进行颗粒去除的单基板加工头
公开(公告)号：WO2010002905A1
公开(公告)日：2010-01-07
申请号：PCT/US2009/049280
申请日：2009-06-30
申请人： LAM RESEARCH CORPORATION , KHOLODENKO, Arnold , LIN, Cheng-yu , GINZBURG, Leon , MANDELBOYM, Mark , TOMASCH, Gregory, A. , HUSAIN, Anwar
发明人： KHOLODENKO, Arnold , LIN, Cheng-yu , GINZBURG, Leon , MANDELBOYM, Mark , TOMASCH, Gregory, A. , HUSAIN, Anwar
IPC分类号： H01L21/30
CPC分类号： H01L21/67023 , H01L21/67051 , H01L21/67173 , H01L21/67748 , Y10T137/85938
摘要： A head for dispensing a thin film over a substrate is disclosed The head includes a body assembly that extends between a first and a second end that is at least a width of the substrate The body includes a main bore that is defined between the first and the second ends, the main bore connected to an upper side of a reservoir through a plurality of feeds that are defined between the main bore and the reservoir The body also includes a plurality of outlets connected to a lower side of the reservoir and extend to an output slot The plurality of feeds have a larger cross-sectional area than the plurality of outlets and the plurality of feeds are fewer than the plurality of outlets.
摘要翻译：公开了一种用于在衬底上分配薄膜的头部。头部包括主体组件，其在至少基底的宽度的第一端和第二端之间延伸。主体包括限定在第一和第二端之间的主孔，第二端，主孔通过限定在主孔和储存器之间的多个进料连接到储存器的上侧。主体还包括连接到储存器的下侧的多个出口并延伸到输出槽多个进料具有比多个出口更大的横截面积，并且多个进料少于多个出口。

3. 发明申请

WO2009100409A3 APPARATUS FOR SUBSTANTIALLY UNIFORM FLUID FLOW RATES RELATIVE TO A PROXIMITY HEAD IN PROCESSING OF A WAFER SURFACE BY A MENISCUS 审中-公开
标题翻译：装置用于通过曼尼斯卡处理WAFER表面的临时头部的大体均匀流体流量
公开(公告)号：WO2009100409A3
公开(公告)日：2009-12-03
申请号：PCT/US2009033499
申请日：2009-02-07
申请人： LAM RES CORP , KHOLODENKO ARNOLD , LIN CHENG-YU SEAN , MARTIN RUSSELL
发明人： KHOLODENKO ARNOLD , LIN CHENG-YU SEAN , MARTIN RUSSELL
IPC分类号： H01L21/304 , H01L21/30
CPC分类号： H01L21/67051 , Y10S134/902 , Y10T29/49826
摘要： Conditioning fluid flow into a proximity head is provided for fluid delivery to a wafer surface. An upper plenum connected to a plurality of down flow bores is supplied by a main bore. The down flow bores provide fluid into the upper plenum, and a resistor bore is connected to the upper plenum. The resistor bore receives a resistor having a shape so as to limit flow of the fluid through the resistor bore. A lower plenum connected to the resistor bore is configured to receive fluid from the resistor bore as limited by the resistor for flow to a plurality of outlet ports extending between the lower plenum and surfaces of the head surface. Fluid flowing through the upper plenum, the resistor bore with the resistor and the lower plenum is substantially conditioned to define a substantially uniform fluid outflow from the plurality of outlet ports, across the width of the proximity head.
摘要翻译：提供流体流入邻近头部的调节流体输送到晶片表面。连接到多个向下流动孔的上部气室由主孔提供。向下流动孔将流体提供到上部通风室中，并且电阻器孔连接到上部增压室。电阻器孔接收具有形状以阻止流体流过电阻器孔的电阻器。连接到电阻器孔的下部增压室被配置为从电阻器孔接收流体，由电阻器限制，以流向在下部增压室和头部表面的表面之间延伸的多个出口端口。流过上部通风室的流体，具有电阻器和下部增压室的电阻器孔基本上被调节以限定跨过接近头部宽度的多个出口端口的基本均匀的流体流出。

4. 发明申请

WO2009100409A2 APPARATUS FOR SUBSTANTIALLY UNIFORM FLUID FLOW RATES RELATIVE TO A PROXIMITY HEAD IN PROCESSING OF A WAFER SURFACE BY A MENISCUS 审中-公开
标题翻译：用于在由半月板处理晶片表面时对于近接头而言大体上一致的流体流速的装置
公开(公告)号：WO2009100409A2
公开(公告)日：2009-08-13
申请号：PCT/US2009/033499
申请日：2009-02-07
申请人： LAM RESEARCH CORPORATION , KHOLODENKO, Arnold , LIN, Cheng-Yu (Sean) , MARTIN, Russell
发明人： KHOLODENKO, Arnold , LIN, Cheng-Yu (Sean) , MARTIN, Russell
IPC分类号： H01L21/304 , H01L21/30
CPC分类号： H01L21/67051 , Y10S134/902 , Y10T29/49826
摘要： Conditioning fluid flow into a proximity head is provided for fluid delivery to a wafer surface. An upper plenum connected to a plurality of down flow bores is supplied by a main bore. The down flow bores provide fluid into the upper plenum, and a resistor bore is connected to the upper plenum. The resistor bore receives a resistor having a shape so as to limit flow of the fluid through the resistor bore. A lower plenum connected to the resistor bore is configured to receive fluid from the resistor bore as limited by the resistor for flow to a plurality of outlet ports extending between the lower plenum and surfaces of the head surface. Fluid flowing through the upper plenum, the resistor bore with the resistor and the lower plenum is substantially conditioned to define a substantially uniform fluid outflow from the plurality of outlet ports, across the width of the proximity head.
摘要翻译：调节流体流入邻近头以提供流体输送至晶片表面。连接到多个下流孔的上部充气室由主孔供应。下流孔提供流体进入上部充气室，电阻器孔连接到上部充气室。电阻器孔接收具有形状的电阻器以限制流体通过电阻器孔的流动。连接到电阻器孔的下部充气室被配置为接收来自电阻器孔的流体，如由电阻器限制的，用于流动到在下部充气室与头部表面的表面之间延伸的多个出口端口。流过上部充气室的流体，具有电阻器和下部充气室的电阻器孔基本上被调节成限定从多个出口端口跨越邻近头部的宽度大体均匀的流体流出。

5. 发明申请

WO2008021257A3 CHEMICAL RESISTANT SEMICONDUCTOR PROCESSING CHAMBER BODIES 审中-公开
公开(公告)号：WO2008021257A3
公开(公告)日：2008-02-21
申请号：PCT/US2007/017824
申请日：2007-08-09
申请人： LAM RESEARCH CORPORATION , CHENG, Helen , KHOLODENKO, Arnold , MANDELBOYM, Mark , PENG, Grant , MIKHAYLICHENKO, Katrina
发明人： KHOLODENKO, Arnold , MANDELBOYM, Mark , PENG, Grant , MIKHAYLICHENKO, Katrina
IPC分类号： C09D5/10
摘要： In one embodiment a chamber body enabling semiconductor processing equipment to be at least partially housed in the chamber body, the semiconductor processing equipment being configured to process a substrate using fluids is disclosed. The chamber body being comprised of a base material implemented to form the chamber body, the chamber body defined by at least a bottom surface and wall surfaces that are integrally connected to the bottom surface to enable capture of overflows of fluids during the processing of the substrate over the chamber body. Additionally, the base material is metallic. The chamber body also has a primer coat material disposed over and on the base material. The primer coat material has metallic constituents to define an integrated bond with the base material along with non- metallic constituents. The chamber body further includes a main coat material disposed over and on the primer coat material. The main coat material being defined from non-metallic constituents, the non-metallic constituents of the main coat material defining an integrated bond with the primer coat material. The main coat material defined to completely overlie all the metallic constituents of the primer coat.

6. 发明申请

WO2010132371A3 MULTI-STAGE SUBSTRATE CLEANING METHOD AND APPARATUS 审中-公开
标题翻译：多级基板清洗方法和装置
公开(公告)号：WO2010132371A3
公开(公告)日：2011-02-03
申请号：PCT/US2010034264
申请日：2010-05-10
申请人： LAM RES CORP , KHOLODENKO ARNOLD , MIKHAYLICHENKO KATRINA , LIN CHENG-YU SEAN , WILCOXSON MARK , GINZBURG LEON , KAWAGUCHI MARK
发明人： KHOLODENKO ARNOLD , MIKHAYLICHENKO KATRINA , LIN CHENG-YU SEAN , WILCOXSON MARK , GINZBURG LEON , KAWAGUCHI MARK
IPC分类号： H01L21/302
CPC分类号： B08B3/041 , H01L21/02057 , H01L21/67051
摘要： A first application of a cleaning material is made to a surface of a substrate. The cleaning material includes one or more viscoelastic materials for entrapping contaminants present on the surface of the substrate. A first application of a rinsing fluid is made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate. The first application of the rinsing fluid is also performed to leave a residual thin film of the rinsing fluid on the surface of the substrate. A second application of the cleaning material is made to the surface of the substrate having the residual thin film of rinsing fluid present thereon. A second application of the rinsing fluid is then made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate.
摘要翻译：对基材的表面进行清洁材料的第一次施加。清洁材料包括用于捕获存在于基材表面上的污染物的一种或多种粘弹性材料。冲洗液的第一次应用是在基材的表面上进行，从基材的表面冲洗清洗材料。洗涤液的第一次施加也被执行以在衬底的表面上留下漂洗液的残余薄膜。清洁材料的第二次应用是在其上具有残留的冲洗液薄膜的基板的表面上。然后将冲洗流体的第二次应用制成到基材的表面，以便从基材的表面漂洗清洁材料。

7. 发明申请

WO2010017146A1 GENERATOR FOR FOAM TO CLEAN SUBSTRATE 审中-公开
标题翻译：泡沫发电机清洁基板
公开(公告)号：WO2010017146A1
公开(公告)日：2010-02-11
申请号：PCT/US2009/052609
申请日：2009-08-03
申请人： LAM RESEARCH CORPORATION , KHOLODENKO, Arnold , HUSAIN, Anwar , TOMASCH, Gregory, A. , LIN, Cheng-yu (sean)
发明人： KHOLODENKO, Arnold , HUSAIN, Anwar , TOMASCH, Gregory, A. , LIN, Cheng-yu (sean)
IPC分类号： B08B3/00
CPC分类号： H01L21/67051 , B01F3/04446 , B01F5/0473 , B01F5/0475 , B01F5/0485 , B01F5/0656 , B01F5/0657 , Y10T137/0318
摘要： In an example embodiment, a device for generating a cleaning foam includes a female housing and a male plug. The plug includes an aperture into which a fluid flows from another component of the cleaning system. The plug includes a premix chamber which receives the fluid from the aperture and into which a gas is injected to form a foam. In an example embodiment, the chamber is a hollow cylinder and the gas is injected into the cylinder through channels which are tangential to the cylinder. The plug also includes a solid cylinder with a continuous helical indentation on the outside of the solid cylinder. When the male plug is inserted into the female housing, the continuous helical indentation and the inner surface of the housing form a helical channel through which the foam flows and is further mixed on its way back into the cleaning system.
摘要翻译：在示例性实施例中，用于产生清洁泡沫的装置包括阴壳体和阳插头。塞子包括孔，流体从清洁系统的另一部件流入流体。塞子包括预混合室，其接收来自孔的流体并注入气体以形成泡沫。在一个示例性实施例中，腔室是中空圆柱体，并且气体通过与气缸相切的通道注入气缸。塞子还包括在实心圆柱体的外侧上具有连续的螺旋形凹陷的实心圆柱体。当公插头插入阴壳体中时，连续的螺旋形凹口和壳体的内表面形成螺旋通道，泡沫流过该通道，并进一步在返回到清洁系统中的混合物中混合。

8. 发明申请

WO2007081653B1 APPARATUS FOR AN OPTIMIZED PLASMA CHAMBER GROUNDED ELECTRODE ASSEMBLY 审中-公开
标题翻译：用于优化的等离子体室接地电极组件的装置
公开(公告)号：WO2007081653B1
公开(公告)日：2008-10-02
申请号：PCT/US2006062443
申请日：2006-12-20
申请人： LAM RES CORP , KHOLODENKO ARNOLD , HUSAIN ANWAR
发明人： KHOLODENKO ARNOLD , HUSAIN ANWAR
IPC分类号： C23C16/00
CPC分类号： H01J37/32532 , H01J37/32055 , H01J37/32082 , H01J37/32091 , H01J37/32174 , H01J37/32458 , H01J37/32559 , H01J37/32577 , H01J37/32651 , H01J37/32724 , H01L21/67069
摘要： An electrode assembly configured to provide a ground path for a plasma processing chamber of a plasma processing system is disclosed. The apparatus includes an electrode configured to be exposed to a plasma. The apparatus also includes a heater plate disposed above the electrode, wherein the heater plate is configured to heat the electrode. The apparatus further includes a cooling plate disposed above the heater plate, wherein the cooling plate is configured to cool the electrode. The apparatus also includes a plasma chamber lid configured to confine the plasma in the plasma chamber, wherein the plasma chamber lid includes a ground. The apparatus further includes a clamp ring configured to secure the electrode, the heater plate, and the cooling plate to the plasma chamber lid, the clamp ring is further configured to provide the ground path from the electrode to the chamber lid.
摘要翻译：公开了一种配置成为等离子体处理系统的等离子体处理室提供接地路径的电极组件。该设备包括配置成暴露于等离子体的电极。该设备还包括设置在电极上方的加热器板，其中加热器板配置为加热电极。该设备还包括设置在加热器板上方的冷却板，其中冷却板被配置为冷却电极。该设备还包括等离子体室盖，其被配置成将等离子体限制在等离子体室中，其中等离子体室盖包括地面。该装置还包括配置成将电极，加热器板和冷却板固定到等离子体室盖的夹环，该夹环进一步被配置为提供从电极到室盖的接地路径。

9. 发明申请

WO2008021257A2 CHEMICAL RESISTANT SEMICONDUCTOR PROCESSING CHAMBER BODIES 审中-公开
标题翻译：耐化学腐蚀的半导体处理腔室
公开(公告)号：WO2008021257A2
公开(公告)日：2008-02-21
申请号：PCT/US2007/017824
申请日：2007-08-09
申请人： LAM RESEARCH CORPORATION , KHOLODENKO, Arnold , MANDELBOYM, Mark , PENG, Grant , MIKHAYLICHENKO, Katrina
发明人： KHOLODENKO, Arnold , MANDELBOYM, Mark , PENG, Grant , MIKHAYLICHENKO, Katrina
IPC分类号： B05C11/00 , B05D3/00
CPC分类号： H01L21/67051 , H01L21/6719
摘要： In one embodiment a chamber body enabling semiconductor processing equipment to be at least partially housed in the chamber body, the semiconductor processing equipment being configured to process a substrate using fluids is disclosed. The chamber body being comprised of a base material implemented to form the chamber body, the chamber body defined by at least a bottom surface and wall surfaces that are integrally connected to the bottom surface to enable capture of overflows of fluids during the processing of the substrate over the chamber body. Additionally, the base material is metallic. The chamber body also has a primer coat material disposed over and on the base material. The primer coat material has metallic constituents to define an integrated bond with the base material along with non- metallic constituents. The chamber body further includes a main coat material disposed over and on the primer coat material. The main coat material being defined from non-metallic constituents, the non-metallic constituents of the main coat material defining an integrated bond with the primer coat material. The main coat material defined to completely overlie all the metallic constituents of the primer coat.
摘要翻译：在一个实施例中，公开了使半导体处理设备能够至少部分地容纳在腔室主体中的腔室主体，半导体处理设备被配置为使用流体处理基板。腔体由基体材料构成，该基体材料用于形成腔体，腔体由至少一个底面和与底面整体连接的壁面限定，以在基板加工过程中捕获流体溢流在腔体上。另外，基材是金属的。腔体还具有设置在基体材料上和基体材料上的底涂层材料。底涂层材料具有金属成分以与非金属成分一起限定与基材的整体结合。腔室主体还包括设置在底涂层材料之上和之上的主涂层材料。主涂层材料由非金属成分限定，主涂层材料的非金属成分与底涂层材料形成整体结合。定义的主要涂层材料完全覆盖底漆涂层的所有金属成分。

10. 发明申请

WO2010062918A3 CONFINEMENT OF FOAM DELIVERED BY A PROXIMITY HEAD 审中-公开
标题翻译：由接力头提供的泡沫的限制
公开(公告)号：WO2010062918A3
公开(公告)日：2010-08-12
申请号：PCT/US2009065812
申请日：2009-11-24
申请人： LAM RES CORP , KHOLODENKO ARNOLD , LIN CHENG-YU SEAN , GINZBURG LEON , MANDELBOYM MARK , TOMASCH GREGORY A , HUSAIN ANWAR
发明人： KHOLODENKO ARNOLD , LIN CHENG-YU SEAN , GINZBURG LEON , MANDELBOYM MARK , TOMASCH GREGORY A , HUSAIN ANWAR
IPC分类号： H01L21/302
CPC分类号： H01L21/6704 , B08B3/003 , C11D11/0047 , C11D11/0058 , H01L21/67051 , H01L21/67057 , H01L21/6719 , H01L21/6776
摘要： In an example embodiment, a linear wet system includes a carrier and a proximity head in a chamber. The proximity head includes three sections in a linear arrangement. The first section suctions liquid from the upper surface of a semiconductor wafer as the wafer is transported by the carrier under the proximity head. The second section is configured to cause a film (or meniscus) of cleaning foam which is a non-Newtonian fluid to flow onto the upper surface of the wafer. The third section is configured to cause a film of rinsing fluid to flow onto the upper surface of the wafer as the wafer is carried under the proximity head. The third section is defined partially around the second section and up to the first section, so that the third section and the first section create a confinement of the cleaning foam with respect to the chamber.
摘要翻译：在一个示例性实施例中，线性湿式系统包括载体和室中的邻近头部。接近头包括线性布置的三个部分。第一部分在半导体晶片的上表面吸附液体，因为晶片由邻近头部下方的载体输送。第二部分被配置为使得作为非牛顿流体的清洁泡沫的膜（或弯液面）流动到晶片的上表面上。第三部分构造成当晶片被携带在邻近头部下方时，使冲洗流体膜流到晶片的上表面。第三部分围绕第二部分和第一部分部分地限定，使得第三部分和第一部分产生相对于室的清洁泡沫的限制。

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