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1. 发明申请

US20060196605A1 Method and apparatus for plasma processing 审中-公开
标题翻译：等离子体处理方法和装置
公开(公告)号：US20060196605A1
公开(公告)日：2006-09-07
申请号：US11190839
申请日：2005-07-28
申请人： Eiji Ikegami , Kunihiko Koroyasu , Tadamitsu Kanekiyo , Masahiro Sumiya
发明人： Eiji Ikegami , Kunihiko Koroyasu , Tadamitsu Kanekiyo , Masahiro Sumiya
IPC分类号： H01L21/306 , C23F1/00 , C23C16/00 , H05H1/24
CPC分类号： H01J37/32706 , H01J37/32082 , H01J37/32935
摘要： In processing a semiconductor device, foreign particles that may cause defects are reduced to improve production yield without decreasing availability of a semiconductor manufacturing apparatus. The apparatus comprises a mechanism operable to control an ion sheath 32w on an electrode 14 for mounting a wafer 2 and an ion sheath 32f on a member 141 mounted on the periphery of the electrode 14. The thickness of the ion sheath 32f is made smaller than the thickness of the ion sheath 32w to provide a slope of ion sheath 32s near the edge of the wafer 2, thereby causing ions 31 to be obliquely incident on the wafer edge to reduce deposition film on the wafer edge.
摘要翻译：在半导体器件的处理中，可能引起缺陷的异物会降低，从而提高生产率而不降低半导体制造装置的可用性。该装置包括一个可操作的机构，用于控制电极14上的离子鞘32w，用于将晶片2和离子鞘32f安装在安装在电极14周围的构件141上。离子鞘32f的厚度为使离子鞘32 w的厚度小于晶片2的边缘附近的离子鞘32 s的斜率，从而使离子31倾斜入射在晶片边缘上，以减少晶片边缘上的沉积膜。

2. 发明申请

US20070181528A1 Method of etching treatment 审中-公开
标题翻译：蚀刻处理方法
公开(公告)号：US20070181528A1
公开(公告)日：2007-08-09
申请号：US11369134
申请日：2006-03-07
申请人： Kunihiko Koroyasu , Nobuyuki Negishi
发明人： Kunihiko Koroyasu , Nobuyuki Negishi
IPC分类号： G01L21/30 , C23F1/00
CPC分类号： H01L21/31116 , H01J2237/2001
摘要： The formation and adhesion of excessive deposits are suppressed in an etching process in which a resist of the ArF lithography generation and later is used as a mask. In an etching treatment method which is performed, by use of an etching apparatus which has a vacuum chamber 101, means for setting a sample to be worked 102 which sets a sample to be worked 107, cooling gas introducing means 111, a high frequency power source 106, a matching device 105, power introducing means 104, and a high frequency bias power source 110, by converting a gas introduced into the vacuum chamber 101 into a plasma and applying high frequency bias power to the sample to be worked 107, whereby surface treatment of the sample to be worked 107 is performed by the plasma, in treating the sample to be worked 107 by use of a highly depositable gas, the temperature of the sample to be worked 107 at the start of the treatment is maintained at a desired level.
摘要翻译：在其中将ArF光刻产生的抗蚀剂和稍后的光刻胶用作掩模的蚀刻工艺中，过度沉积物的形成和粘附被抑制。在通过使用具有真空室101的蚀刻装置的蚀刻处理方法中，设定待加工样品102的设定装置的装置107，冷却气体导入装置111，高频电力源106，匹配装置105，功率引入装置104和高频偏置电源110，通过将引入真空室101的气体转换成等离子体并向待加工样品107施加高频偏置功率，由此待加工样品107的表面处理是通过等离子体进行的，通过使用高度可沉积的气体处理待加工样品107，待处理开始时待加工样品107的温度保持在期望水平。

3. 发明授权

US07052731B2 Plasma processing apparatus, protecting layer therefor and installation of protecting layer 失效
标题翻译：等离子体处理装置，其保护层和安装保护层
公开(公告)号：US07052731B2
公开(公告)日：2006-05-30
申请号：US10963575
申请日：2004-10-14
申请人： Kunihiko Koroyasu , Muneo Furuse , Tomoyuki Tamura
发明人： Kunihiko Koroyasu , Muneo Furuse , Tomoyuki Tamura
IPC分类号： B05D3/02
CPC分类号： H01J37/32559 , C23C14/568
摘要： The following plasma processing apparatus can suppress the production of contaminants from the plasma processing chamber of the apparatus and an article in the plasma processing chamber which are allowed to act as ground electrodes: a plasma processing apparatus in which a workpiece is processed by creating a plasma in the processing chamber, and one or more surfaces made of a grounded metal electric conductor which come into contact with the plasma in the plasma processing chamber are coated with a plasma-resistant polymeric material having a relationship between relative dielectric constant k∈ and thickness t (μm) of t/k∈
摘要翻译：以下等离子体处理装置能够抑制来自装置的等离子体处理室和允许作为接地电极的等离子体处理室中的物品的污染物的产生：其中通过产生等离子体处理工件的等离子体处理装置在处理室中，与等离子体处理室中与等离子体接触的由接地金属导体制成的一个或多个表面涂覆有等离子体耐久性聚合材料，其具有相对介电常数k∈和厚度t之间的关系（mum）t /k∈<300，或者由耐等离子体和吸水性树脂材料形成的保护层通过其膨胀然后收缩而固定到处理室中的物品的外表面。

4. 发明授权

US06914005B2 Plasma etching method 失效
标题翻译：等离子蚀刻法
公开(公告)号：US06914005B2
公开(公告)日：2005-07-05
申请号：US10085002
申请日：2002-03-01
申请人： Muneo Furuse , Mitsuru Suehiro , Hiroshi Kanekiyo , Kunihiko Koroyasu , Tomoyuki Tamura
发明人： Muneo Furuse , Mitsuru Suehiro , Hiroshi Kanekiyo , Kunihiko Koroyasu , Tomoyuki Tamura
IPC分类号： H01J37/32 , H01L21/302 , H01L21/461
CPC分类号： H01J37/32449 , H01J37/32082
摘要： A plasma etching method and apparatus in which a processing gas is supplied from a shower plate arranged on an electrode opposed to an electrode for generating a plasma or a sample toward the sample center, and the gas is transformed into a plasma thereby to etch the sample. RF power is applied between a sample stage and the electrode to apply the energy to charged particles in the plasma to thereby etch the sample. In the process, apart from the incidence of the charged particles to the sample, the charged particles enter also the shower plate of the electrode by application of the RF power. The charged particles entering the processing gas supply holes of the shower plate are neutralized to prevent abnormal discharge on the shower plate and consequently suppress the generation of foreign matter.
摘要翻译：一种等离子体蚀刻方法和装置，其中处理气体从布置在与用于产生等离子体或样品的电极相对的电极上的淋浴板供给到样品中心，并且将气体转化为等离子体，从而蚀刻样品。在样品台和电极之间施加RF功率以将能量施加到等离子体中的带电粒子上，从而蚀刻样品。在该过程中，除了带电粒子对样品的入射之外，带电粒子通过施加RF功率也进入电极的喷淋板。进入喷淋板的处理气体供给孔的带电粒子被中和，以防止喷淋板上的异常放电，从而抑制异物的产生。

5. 发明申请

US20050045107A1 Plasma processing apparatus, protecting layer therefor and installation of protecting layer 失效
标题翻译：等离子体处理装置，其保护层和安装保护层
公开(公告)号：US20050045107A1
公开(公告)日：2005-03-03
申请号：US10963575
申请日：2004-10-14
申请人： Kunihiko Koroyasu , Muneo Furuse , Tomoyuki Tamura
发明人： Kunihiko Koroyasu , Muneo Furuse , Tomoyuki Tamura
IPC分类号： C23C14/56 , H01J37/32 , C23C16/00
CPC分类号： H01J37/32559 , C23C14/568
摘要： The following plasma processing apparatus can suppress the production of contaminants from the plasma processing chamber of the apparatus and an article in the plasma processing chamber which are allowed to act as ground electrodes: a plasma processing apparatus in which a workpiece is processed by creating a plasma in the processing chamber, and one or more surfaces made of a grounded metal electric conductor which come into contact with the plasma in the plasma processing chamber are coated with a plasma-resistant polymeric material having a relationship between relative dielectric constant kε and thickness t (μm) of t/kε
摘要翻译：以下等离子体处理装置能够抑制来自装置的等离子体处理室和允许作为接地电极的等离子体处理室中的物品的污染物的产生：其中通过产生等离子体处理工件的等离子体处理装置在处理室中，并且与等离子体处理室中与等离子体接触的由接地金属导电体制成的一个或多个表面涂覆有等离子体耐久性聚合材料，其具有相对介电常数kepsilon和厚度t之间的关系（妈妈）的t / kepsilon <300，或由等离子体和吸水性树脂材料形成的保护层通过其膨胀然后收缩而固定到处理室中的物品的外表面。

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