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1. 发明授权

US07029594B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US07029594B2
公开(公告)日：2006-04-18
申请号：US10658398
申请日：2003-09-10
申请人： Naoki Yasui , Masahiro Sumiya , Hitoshi Tamura , Seiichi Watanabe
发明人： Naoki Yasui , Masahiro Sumiya , Hitoshi Tamura , Seiichi Watanabe
IPC分类号： G01R31/00 , H01L21/00
CPC分类号： H01J37/32174 , H01J37/32082
摘要： A plasma processing method for providing plasma processing to an object to be processed disposed within a vacuum processing chamber in which a process gas feeding device feeds process gas into the vacuum processing chamber, a wafer electrode is placed within the vacuum processing chamber for mounting the object to be processed, a wafer bias power generator applies self-bias voltage to the wafer electrode, and a plasma generator generates plasma within the vacuum processing chamber. The plasma processing method flattens either a positive side voltage or a negative side voltage of a voltage waveform of a high frequency voltage generated to the object at an arbitrary voltage.
摘要翻译：一种等离子体处理方法，用于对处理气体供给装置将处理气体进入真空处理室的真空处理室内的待处理物体进行等离子体处理，将晶片电极置于真空处理室内，以安装物体为了进行处理，晶片偏置功率发生器对晶片电极施加自偏压，等离子体发生器在真空处理室内产生等离子体。等离子体处理方法使在任意电压下对物体产生的高频电压的电压波形的正侧电压或负侧电压平坦化。

2. 发明授权

US07169255B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US07169255B2
公开(公告)日：2007-01-30
申请号：US10358894
申请日：2003-02-06
申请人： Naoki Yasui , Masahiro Sumiya , Hitoshi Tamura , Seiichi Watanabe
发明人： Naoki Yasui , Masahiro Sumiya , Hitoshi Tamura , Seiichi Watanabe
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/32174 , H01J37/32082
摘要： A plasma processing apparatus for providing plasma processing to an object placed inside a processing chamber includes a vacuum chamber, a process gas feeder feeding gas into the vacuum chamber, a wafer electrode disposed within the vacuum chamber for mounting the object, a wafer bias power generator supplying bias voltage to the wafer electrode, and a plasma generator for generating plasma within the vacuum chamber. The wafer bias power generator includes a clip circuit for clipping either a positive-side voltage or a negative-side voltage to a predetermined voltage.
摘要翻译：一种用于向放置在处理室内的物体提供等离子体处理的等离子体处理装置包括真空室，将真空室内的气体输送到工作气体供给装置，设置在真空室内的用于安装物体的晶片电极，晶片偏置功率发生器向晶片电极提供偏置电压，以及用于在真空室内产生等离子体的等离子体发生器。晶片偏置功率发生器包括用于将正侧电压或负侧电压截止为预定电压的钳位电路。

3. 发明授权

US07373899B2 Plasma processing apparatus using active matching 有权
标题翻译：等离子体处理装置采用主动匹配
公开(公告)号：US07373899B2
公开(公告)日：2008-05-20
申请号：US10954074
申请日：2004-09-30
申请人： Masahiro Sumiya , Naoki Yasui , Seiichi Watanabe , Hitoshi Tamura
发明人： Masahiro Sumiya , Naoki Yasui , Seiichi Watanabe , Hitoshi Tamura
IPC分类号： H01L21/00
CPC分类号： H01J37/32082 , C23C16/507 , C23C16/509 , C23C16/511 , H01J37/32183
摘要： A plasma processing apparatus having a processing chamber connected to a vacuum exhauster so that its inside pressure can be reduced by the vacuum exhauster, a gas feed unit for supplying gas into the processing chamber, a substrate electrode provided in the processing chamber and on which a sample can be placed, an RF power supply connected through a matching circuit to the substrate electrode, plasma generating means for generating plasma within the processing chamber and a voltage waveform control circuit provided within the matching circuit or between the substrate electrode and the matching circuit to flatten the voltage waveform from the RF power supply.
摘要翻译：一种等离子体处理装置，其具有连接到真空排气器的处理室，使得其内部压力可以通过真空排气器减少;气体供给单元，用于将气体供应到处理室中;基板电极，设置在处理室中，可以放置样品，通过匹配电路连接到基板电极的RF电源，用于在处理室内产生等离子体的等离子体产生装置和设置在匹配电路内或者在基板电极和匹配电路之间的电压波形控制电路，平坦化RF电源的电压波形。

4. 发明申请

US20050034813A1 Plasma processing apparatus using active matching 有权
标题翻译：等离子体处理装置采用主动匹配
公开(公告)号：US20050034813A1
公开(公告)日：2005-02-17
申请号：US10954074
申请日：2004-09-30
申请人： Masahiro Sumiya , Naoki Yasui , Seiichi Watanabe , Hitoshi Tamura
发明人： Masahiro Sumiya , Naoki Yasui , Seiichi Watanabe , Hitoshi Tamura
IPC分类号： C23C16/507 , C23C16/509 , C23C16/511 , H01J37/32 , C23F1/00
CPC分类号： H01J37/32082 , C23C16/507 , C23C16/509 , C23C16/511 , H01J37/32183
摘要： A plasma processing apparatus having a processing chamber connected to a vacuum exhauster so that its inside pressure can be reduced by the vacuum exhauster, a gas feed unit for supplying gas into the processing chamber, a substrate electrode provided in the processing chamber and on which a sample can be placed, an RF power supply connected through a matching circuit to the substrate electrode, plasma generating means for generating plasma within the processing chamber and a voltage waveform control circuit provided within the matching circuit or between the substrate electrode and the matching circuit to flatten the voltage waveform from the RF power supply.
摘要翻译：一种等离子体处理装置，其具有连接到真空排气器的处理室，使得其内部压力可以通过真空排气器减少;气体供给单元，用于将气体供应到处理室中;基板电极，设置在处理室中，可以放置样品，通过匹配电路连接到基板电极的RF电源，用于在处理室内产生等离子体的等离子体产生装置和设置在匹配电路内或者在基板电极和匹配电路之间的电压波形控制电路，平坦化RF电源的电压波形。

5. 发明授权

US07615132B2 Plasma processing apparatus having high frequency power source with sag compensation function and plasma processing method 失效
标题翻译：等离子体处理装置具有具有下垂补偿功能的高频电源和等离子体处理方法
公开(公告)号：US07615132B2
公开(公告)日：2009-11-10
申请号：US10795353
申请日：2004-03-09
申请人： Naoki Yasui , Seiichi Watanabe , Masahiro Sumiya , Hitoshi Tamura
发明人： Naoki Yasui , Seiichi Watanabe , Masahiro Sumiya , Hitoshi Tamura
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32082 , H01J37/32623 , H01J37/3266 , H01J37/32706
摘要： A plasma processing apparatus suitable for high-speed and high-definition etching is provided. By applying to a wafer chucking electrode 9 a voltage waveform in which an absolute value of high frequency voltage increases with time and switching between a positive voltage and a negative voltage occurs, a rectangular high frequency voltage is caused to be generated in the wafer 10, with the result that the duty ratio of the rectangular high frequency voltage decreases and that the high energy ion ratio in the energy distribution of ions incident on the wafer increases. Therefore, high efficiency and high accuracy etching becomes possible, providing the advantage that the material selection ratio is improved.
摘要翻译：提供了适用于高速和高清晰刻蚀的等离子体处理装置。通过向晶片夹持电极9施加高频电压的绝对值随着时间的推移而在正电压和负电压之间的切换的电压波形，在晶片10中产生矩形的高频电压，结果，矩形高频电压的占空比降低，并且入射在晶片上的离子的能量分布中的高能量离子比增加。因此，高效率和高精度蚀刻成为可能，提供了材料选择比提高的优点。

6. 发明申请

US20070186856A1 PLASMA PROCESSING APPARATUS HAVING HIGH FREQUENCY POWER SOURCE WITH SAG COMPENSATION FUNCTION AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：具有SAG补偿功能和等离子体处理方法的高频电源的等离子体处理装置
公开(公告)号：US20070186856A1
公开(公告)日：2007-08-16
申请号：US11735574
申请日：2007-04-16
申请人： NAOKI YASUI , Seiichi Watanabe , Masahiro Sumiya , Hitoshi Tamura
发明人： NAOKI YASUI , Seiichi Watanabe , Masahiro Sumiya , Hitoshi Tamura
IPC分类号： C23C16/00 , C23F1/00
CPC分类号： H01J37/32082 , H01J37/32623 , H01J37/3266 , H01J37/32706
摘要： The plasma processing apparatus wherein the means for applying a high frequency voltage, which becomes a voltage waveform in which a positive constant voltage and a negative constant voltage alternate with each other at given cycles, is constituted by a DC power source and a switching circuit (a chopper circuit).
摘要翻译：等离子体处理装置，其中，用于施加高频电压的装置，其是在给定周期中成为正恒定电压和负的恒定电压彼此交替的电压波形，由直流电源和开关电路（斩波电路）。

7. 发明申请

US20050081999A1 Plasma processing apparatus having high frequency power source with sag compensation function and plasma processing method 失效
标题翻译：等离子体处理装置具有具有下垂补偿功能的高频电源和等离子体处理方法
公开(公告)号：US20050081999A1
公开(公告)日：2005-04-21
申请号：US10795353
申请日：2004-03-09
申请人： Naoki Yasui , Seiichi Watanabe , Masahiro Sumiya , Hitoshi Tamura
发明人： Naoki Yasui , Seiichi Watanabe , Masahiro Sumiya , Hitoshi Tamura
IPC分类号： H01J37/32 , C23F1/00
CPC分类号： H01J37/32082 , H01J37/32623 , H01J37/3266 , H01J37/32706
摘要： A plasma processing apparatus suitable for high-speed and high-definition etching is provided. By applying to a wafer chucking electrode 9 a voltage waveform in which an absolute value of high frequency voltage increases with time and switching between a positive voltage and a negative voltage occurs, a rectangular high frequency voltage is caused to be generated in the wafer 10, with the result that the duty ratio of the rectangular high frequency voltage decreases and that the high energy ion ratio in the energy distribution of ions incident on the wafer increases. Therefore, high efficiency and high accuracy etching becomes possible, providing the advantage that the material selection ratio is improved.
摘要翻译：提供了适用于高速和高清晰刻蚀的等离子体处理装置。通过向晶片夹持电极9施加高频电压的绝对值随着时间的推移而在正电压和负电压之间的切换的电压波形，在晶片10中产生矩形的高频电压，结果，矩形高频电压的占空比降低，并且入射在晶片上的离子的能量分布中的高能量离子比增加。因此，高效率和高精度蚀刻成为可能，提供了材料选择比提高的优点。

8. 发明授权

US06806201B2 Plasma processing apparatus and method using active matching 有权
标题翻译：等离子体处理装置和方法采用主动匹配
公开(公告)号：US06806201B2
公开(公告)日：2004-10-19
申请号：US09946618
申请日：2001-09-06
申请人： Masahiro Sumiya , Naoki Yasui , Seiichi Watanabe , Hitoshi Tamura
发明人： Masahiro Sumiya , Naoki Yasui , Seiichi Watanabe , Hitoshi Tamura
IPC分类号： H01L21461
CPC分类号： H01J37/32082 , C23C16/507 , C23C16/509 , C23C16/511 , H01J37/32183
摘要： A plasma processing method and apparatus are proposed that are suited to process the surface of a sample such as a semiconductor device using plasma. The bias voltages to the plasma generation and sample are respectively independently controlled, the RF voltage waveform as the bias voltage to a substrate electrode on which the sample is placed is flattened at an arbitrary voltage level, thereby controlling the energy distribution of ions incident to the sample to be a desired distribution. Therefore, plasma processing can be carried out with high precision.
摘要翻译：提出了一种等离子体处理方法和装置，其适用于使用等离子体处理诸如半导体器件的样品的表面。分别独立地控制对等离子体产生和样品的偏置电压，将作为放置样品的基板电极的偏置电压的RF电压波形平坦化为任意的电压电平，由此控制入射到等离子体的离子的能量分布样品成为所需的分布。因此，可以高精度地进行等离子体处理。

9. 发明授权

US06875366B2 Plasma processing apparatus and method with controlled biasing functions 失效
标题翻译：具有受控偏置功能的等离子体处理装置和方法
公开(公告)号：US06875366B2
公开(公告)日：2005-04-05
申请号：US09946491
申请日：2001-09-06
申请人： Masahiro Sumiya , Naoki Yasui , Seiichi Watanabe
发明人： Masahiro Sumiya , Naoki Yasui , Seiichi Watanabe
IPC分类号： C23C16/44 , C23C16/50 , C23C16/509 , H01L21/00
CPC分类号： C23C16/5096 , C23C16/4401 , H01J37/32165
摘要： Processing technique using plasma to process the surface of a sample such as semiconductor device. The phases of RF bias voltages applied to a substrate electrode and an antenna electrode opposed thereto are controlled to be opposite to each other so that either one of the electrodes is forced to always function as ground. Therefore, the current flowing to cross the magnetic field for controlling the plasma is decreased, and the potential distribution difference in the surface of the sample to be processed is reduced, so that the charging damage can be suppressed. Energy of ions incident to the sample to be processed can be controlled to perform high-precision etching. The plasma potential can also be controlled so that the strength of the ion impact to the inner wall of the chamber can be reduced, thereby reducing particles detached from the inner wall of the processing apparatus to improve the throughput.
摘要翻译：使用等离子体处理诸如半导体器件的样品表面的处理技术。施加到与其相对的基板电极和天线电极的RF偏置电压的相位被控制为彼此相反，使得电极中的任一个被强制地始终用作接地。因此，流过用于控制等离子体的磁场的电流减少，并且待处理样品的表面的电位分布差减小，从而可以抑制充电损伤。可以控制入射到待处理样品的离子的能量，以进行高精度蚀刻。也可以控制等离子体电位，使离子冲击室内壁的强度降低，从而减少从处理装置的内壁脱离的颗粒，以提高生产量。

10. 发明申请

US20050155711A1 Plasma processing apparatus and method with controlled biasing functions 审中-公开
标题翻译：具有受控偏置功能的等离子体处理装置和方法
公开(公告)号：US20050155711A1
公开(公告)日：2005-07-21
申请号：US11053236
申请日：2005-02-09
申请人： Masahiro Sumiya , Naoki Yasui , Seiichi Watanabe
发明人： Masahiro Sumiya , Naoki Yasui , Seiichi Watanabe
IPC分类号： C23C16/44 , C23C16/50 , C23C16/509 , C23F1/00
CPC分类号： C23C16/5096 , C23C16/4401 , H01J37/32165
摘要： Processing technique using plasma to process the surface of a sample such as semiconductor device. The phases of RF bias voltages applied to a substrate electrode and an antenna electrode opposed thereto are controlled to be opposite to each other so that either one of the electrodes is forced to always function as ground. Accordingly, current flowing to cross the magnetic field for controlling the plasma is decreased, and the potential distribution difference in the surface of the sample to be processed is reduced, so that the charging damage can be suppressed. Energy of ions incident to the sample to be processed can be controlled to perform high-precision etching. The plasma potential can also be controlled so that the strength of the ion impact to the inner wall of the chamber can be reduced, thereby reducing particles detached from the inner wall of the processing apparatus to improve the throughput.
摘要翻译：使用等离子体处理诸如半导体器件的样品表面的处理技术。施加到与其相对的基板电极和天线电极的RF偏置电压的相位被控制为彼此相反，使得电极中的任一个被强制地始终用作接地。因此，流过用于控制等离子体的磁场的电流减少，并且待处理样品的表面的电位分布差减小，从而可以抑制充电损伤。可以控制入射到待处理样品的离子的能量，以进行高精度蚀刻。也可以控制等离子体电位，使离子冲击室内壁的强度降低，从而减少从处理装置的内壁脱离的颗粒，以提高生产量。

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