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1. 发明申请

WO2008085781A1 BIASING CURRENT TO SPEED UP CURRENT MIRROR SETTLING TIME 审中-公开
标题翻译：偏离当前速度以加速当前镜像稳定时间
公开(公告)号：WO2008085781A1
公开(公告)日：2008-07-17
申请号：PCT/US2007/089119
申请日：2007-12-28
申请人： ATMEL CORPORATION , PELLI, Gabriele , LORENZO, Bedarida , MASSIMILIANO, Frulio , BETTINI, Andrea
发明人： PELLI, Gabriele , LORENZO, Bedarida , MASSIMILIANO, Frulio , BETTINI, Andrea
IPC分类号： G05F3/26 , G05F3/00
CPC分类号： H03F3/343 , G09G3/20 , G09G3/3216 , G09G3/3225
摘要： A current mirror circuit includes a first current-mirror transistor coupled to a second current- mirror transistor. A load is coupled to the second current-mirror transistor. A first current source is coupled to the first current-mirror transistor to cause a bias current to flow through the first current-mirror transistor and a second current source is coupled to the second current- mirror transistor and in parallel with the load to shunt the bias current away from the load.
摘要翻译：电流镜像电路包括耦合到第二电流镜像晶体管的第一电流镜像晶体管。负载耦合到第二电流镜晶体管。第一电流源耦合到第一电流镜像晶体管以引起偏置电流流过第一电流镜像晶体管，并且第二电流源耦合到第二电流镜像晶体管并且与负载并联以分流偏离负载的电流。

2. 发明申请

WO2008085781B1 BIASING CURRENT TO SPEED UP CURRENT MIRROR SETTLING TIME 审中-公开
标题翻译：偏移电流以加快电流反射时间
公开(公告)号：WO2008085781B1
公开(公告)日：2008-10-09
申请号：PCT/US2007089119
申请日：2007-12-28
申请人： ATMEL CORP , PELLI GABRIELE , LORENZO BEDARIDA , MASSIMILIANO FRULIO , BETTINI ANDREA
发明人： PELLI GABRIELE , LORENZO BEDARIDA , MASSIMILIANO FRULIO , BETTINI ANDREA
IPC分类号： G05F3/26 , G05F3/00
CPC分类号： H03F3/343 , G09G3/20 , G09G3/3216 , G09G3/3225
摘要： A current mirror circuit includes a first current-mirror transistor coupled to a second current- mirror transistor. A load is coupled to the second current-mirror transistor. A first current source is coupled to the first current-mirror transistor to cause a bias current to flow through the first current-mirror transistor and a second current source is coupled to the second current- mirror transistor and in parallel with the load to shunt the bias current away from the load.
摘要翻译：电流镜电路包括耦合到第二电流镜晶体管的第一电流镜晶体管。负载耦合到第二电流镜晶体管。第一电流源耦合到第一电流镜晶体管，以使偏置电流流过第一电流镜晶体管，并且第二电流源耦合到第二电流镜晶体管并与负载并联以分流偏置电流远离负载。

3. 发明授权

US08837252B2 Memory decoder circuit 有权
标题翻译：内存解码电路
公开(公告)号：US08837252B2
公开(公告)日：2014-09-16
申请号：US13485675
申请日：2012-05-31
申请人： Lorenzo Bedarida , Nicolas Zammit , Emmanuel Racape
发明人： Lorenzo Bedarida , Nicolas Zammit , Emmanuel Racape
IPC分类号： G11C11/00
CPC分类号： G11C8/10
摘要： A decoder circuit includes high voltage and low voltage transistors. The decoder circuit uses the high voltage transistors during modify operations to provide a high voltage, e.g., a boosted voltage, to memory cells to change memory cell status or perform other operations. The decoder circuit uses the low voltage transistors during read operations.
摘要翻译：解码器电路包括高压和低压晶体管。解码器电路在修改操作期间使用高压晶体管来向存储器单元提供高电压，例如升压电压，以改变存储器单元状态或执行其他操作。解码器电路在读取操作期间使用低电压晶体管。

4. 发明授权

US07864557B2 Flexible OTP sector protection architecture for flash memories 有权
标题翻译：灵活的OTP扇区保护架构，用于闪存
公开(公告)号：US07864557B2
公开(公告)日：2011-01-04
申请号：US11529158
申请日：2006-09-28
申请人： Riccardo Riva Reggiori , Lorenzo Bedarida , Giorgio Oddone , Fabio Tassan Caser
发明人： Riccardo Riva Reggiori , Lorenzo Bedarida , Giorgio Oddone , Fabio Tassan Caser
IPC分类号： G11C17/00
CPC分类号： G11C16/22 , G11C2216/26
摘要： A method and system for protecting a memory having a plurality of blocks from modification is disclosed. The method and system include providing a plurality of one time programmable (OTP) cells and OTP cell logic coupled with the OTP cells. An OTP cell of the plurality of OTP cells corresponds to a portion of a block of the plurality of blocks. The OTP cell allows modification of the portion of the block when the OTP cell is in a first state and permanently prevents modification of the portion of the block when the OTP cell is in a second state. The OTP cell logic uses the plurality of OTP cells to select the portion of the block as corresponding to the OTP cell. This portion of the block is write protected when the OTP cell is placed in the second state.
摘要翻译：公开了一种用于保护具有多个块的存储器不被修改的方法和系统。该方法和系统包括提供与OTP单元耦合的多个一次可编程（OTP）单元和OTP单元逻辑。多个OTP单元的OTP单元对应于多个块的块的一部分。当OTP小区处于第一状态时，OTP小区允许修改块的部分，并且当OTP小区处于第二状态时永久地防止块的该部分的修改。 OTP单元逻辑使用多个OTP单元来选择与OTP单元相对应的块的该部分。当OTP单元处于第二状态时，块的这一部分是写保护的。

5. 发明授权

US07782695B2 Compensated current offset in a sensing circuit 有权
标题翻译：感测电路中的补偿电流偏移
公开(公告)号：US07782695B2
公开(公告)日：2010-08-24
申请号：US11652742
申请日：2007-01-12
申请人： Lorenzo Bedarida , Gabriele Pelli , Simone Bartoli , Mauro Chinosi
发明人： Lorenzo Bedarida , Gabriele Pelli , Simone Bartoli , Mauro Chinosi
IPC分类号： G11C7/00
CPC分类号： G11C7/062 , G11C7/02 , G11C7/067 , G11C16/26 , G11C2207/063
摘要： A sensing circuit with current offset functionality. In one embodiment, the sensing circuit includes a memory circuit having a first offset circuit operative to offset a first current. The sensing circuit also includes a reference circuit coupled to the memory circuit, where the reference circuit includes a second offset circuit operative to offset a second current. The sensing circuit also includes a compare circuit coupled to the memory circuit and the reference circuit, where the compare circuit determines the state of a memory cell based on first current and the second current. According to the system disclosed herein, the first and second offset circuits optimize the performance of the sensing circuit and prevent errors when determining the state of the memory cell.
摘要翻译：具有电流偏移功能的感测电路。在一个实施例中，感测电路包括存储器电路，该存储器电路具有可操作以偏移第一电流的第一偏移电路。感测电路还包括耦合到存储器电路的参考电路，其中参考电路包括可操作以偏移第二电流的第二偏移电路。感测电路还包括耦合到存储器电路和参考电路的比较电路，其中比较电路基于第一电流和第二电流确定存储器单元的状态。根据本文公开的系统，第一和第二偏移电路优化感测电路的性能并且在确定存储器单元的状态时防止错误。

6. 发明授权

US07561485B2 Sense architecture 有权
标题翻译：感觉架构
公开(公告)号：US07561485B2
公开(公告)日：2009-07-14
申请号：US11652771
申请日：2007-01-12
申请人： Gabriele Pelli , Lorenzo Bedarida , Simone Bartoli , Giorgio Bosisio
发明人： Gabriele Pelli , Lorenzo Bedarida , Simone Bartoli , Giorgio Bosisio
IPC分类号： G11C7/02
CPC分类号： G11C16/28
摘要： A memory system is disclosed. In one embodiment, the memory system includes a first bitline, where the first bitline produces a first transient current. The memory system also includes a sense amplifier coupled to the first bitline. The memory system also includes a second bitline coupled to the sense amplifier, where the second bitline produces a second transient current that is equal to the first transient current. The sense amplifier enables the first and second transient currents to be canceled. According to the system disclosed herein, the state of a memory cell may be determined without being adversely affected by transient currents.
摘要翻译：公开了一种存储系统。在一个实施例中，存储器系统包括第一位线，其中第一位线产生第一瞬态电流。存储器系统还包括耦合到第一位线的读出放大器。存储器系统还包括耦合到读出放大器的第二位线，其中第二位线产生等于第一瞬态电流的第二瞬态电流。读出放大器能够消除第一和第二瞬态电流。根据本文公开的系统，可以确定存储器单元的状态而不受瞬态电流的不利影响。

7. 发明授权

US07158415B2 System for performing fast testing during flash reference cell setting 有权
标题翻译：在闪存参考单元设置期间执行快速测试的系统
公开(公告)号：US07158415B2
公开(公告)日：2007-01-02
申请号：US11089268
申请日：2005-03-24
申请人： Lorenzo Bedarida , Simone Bartoli , Stefano Surico , Massimiliano Frulio
发明人： Lorenzo Bedarida , Simone Bartoli , Stefano Surico , Massimiliano Frulio
IPC分类号： G11C16/10
CPC分类号： G11C29/028 , G11C16/04 , G11C29/24 , G11C29/50 , G11C29/50004 , G11C2029/5004
摘要： An embedded circuit in a memory device is used in place of an external test device to perform time-consuming tasks such as voltage verification during the setting of reference cells. An external test device programs at least one reference cell to a predetermined value. The embedded circuit uses the cell programmed by the external device as a comparative reference to program additional reference cells.
摘要翻译：使用存储器件中的嵌入式电路来代替外部测试装置来执行耗费时间的任务，例如参考单元设置期间的电压验证。外部测试装置将至少一个参考单元编程为预定值。嵌入式电路使用由外部设备编程的单元作为比较参考来编程附加参考单元。

8. 发明申请

US20060279988A1 System and method for matching resistance in a non-volatile memory 有权
标题翻译：用于在非易失性存储器中匹配电阻的系统和方法
公开(公告)号：US20060279988A1
公开(公告)日：2006-12-14
申请号：US11193924
申请日：2005-07-28
申请人： Lorenzo Bedarida , Andrea Sacco , Giorgio Oddone , Simone Bartoli
发明人： Lorenzo Bedarida , Andrea Sacco , Giorgio Oddone , Simone Bartoli
IPC分类号： G11C16/04
CPC分类号： G11C16/26
摘要： A method and system for approximating resistance in a non-volatile memory has a memory matrix. The memory matrix has a plurality of memory cells and a plurality of memory source lines that are coupled to the plurality of memory cells. A reference matrix is coupled to the memory matrix and has a reference cell. A logic generator is coupled to the reference matrix and is configured to generate an approximation, at the reference cell, of a resistance between a selected one of the plurality of memory cells and at least one of the plurality of memory source lines.
摘要翻译：用于近似非易失性存储器中的电阻的方法和系统具有存储器矩阵。存储矩阵具有耦合到多个存储单元的多个存储器单元和多个存储器源极线。参考矩阵耦合到存储器矩阵并具有参考单元。逻辑发生器耦合到参考矩阵，并被配置为在参考单元处产生多个存储器单元中的所选择的一个与多个存储器源极线中的至少一个之间的电阻的近似。

9. 发明申请

US20060140030A1 System for performing fast testing during flash reference cell setting 有权
标题翻译：在闪存参考单元设置期间执行快速测试的系统
公开(公告)号：US20060140030A1
公开(公告)日：2006-06-29
申请号：US11089268
申请日：2005-03-24
申请人： Lorenzo Bedarida , Simone Bartoli , Stefano Surico , Massimiliano Frulio
发明人： Lorenzo Bedarida , Simone Bartoli , Stefano Surico , Massimiliano Frulio
IPC分类号： G11C29/00
CPC分类号： G11C29/028 , G11C16/04 , G11C29/24 , G11C29/50 , G11C29/50004 , G11C2029/5004
摘要： An embedded circuit in a memory device is used in place of an external test device to perform time-consuming tasks such as voltage verification during the setting of reference cells. An external test device programs at least one reference cell to a predetermined value. The embedded circuit uses the cell programmed by the external device as a comparative reference to program additional reference cells.
摘要翻译：使用存储器件中的嵌入式电路来代替外部测试装置来执行耗费时间的任务，例如参考单元设置期间的电压验证。外部测试装置将至少一个参考单元编程为预定值。嵌入式电路使用由外部设备编程的单元作为比较参考来编程附加参考单元。

10. 发明授权

US07049880B2 High precision digital-to-analog converter with optimized power consumption 有权
标题翻译：具有优化功耗的高精度数模转换器
公开(公告)号：US07049880B2
公开(公告)日：2006-05-23
申请号：US11119675
申请日：2005-05-02
申请人： Stefano Sivero , Lorenzo Bedarida , Massimiliano Frulio
发明人： Stefano Sivero , Lorenzo Bedarida , Massimiliano Frulio
IPC分类号： G05F1/10 , G05F3/02
CPC分类号： H02M3/07 , H03M1/765
摘要： A regulated charge pump circuit having two-way switching means that switches between a first feedback pathway that provides a precise and stable voltage output and a second feedback pathway that provides a regulated voltage output with low current consumption from the power source. The first feedback pathway maintains a precise voltage output by regulating a pass device that draws current to the voltage output. The second feedback pathway regulates the voltage output by controlling the connection of a clock input to the charge pump. A variable resistor is used to set the regulated level of the voltage output. A digital-to analog converter is formed by using a combination logic circuit to convert a digital input signal to a control signal for the variable resistor.
摘要翻译：一种具有双向切换装置的调节电荷泵电路，其在提供精确和稳定的电压输出的第一反馈通路与从电源提供具有低电流消耗的调节电压输出的第二反馈通路之间切换。第一反馈通道通过调节将电流吸引到电压输出的通过装置来保持精确的电压输出。第二反馈通道通过控制时钟输入到电荷泵的连接来调节电压输出。可变电阻用于设置电压输出的稳定电平。通过使用组合逻辑电路将数字输入信号转换成可变电阻器的控制信号，形成数模转换器。

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