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1. 发明授权

US07586108B2 Radiation detector, method of manufacturing a radiation detector and lithographic apparatus comprising a radiation detector 有权
标题翻译：辐射检测器，辐射检测器的制造方法和包括放射线检测器的光刻设备
公开(公告)号：US07586108B2
公开(公告)日：2009-09-08
申请号：US11819160
申请日：2007-06-25
申请人： Stoyan Nihtianov , Arie Johan Van Der Sijs , Bearrach Moest , Petrus Wilhelmus Josephus Maria Kemper , Marc Antonius Maria Haast , Gerardus Wilhelmus Petrus Baas , Lis Karen Nanver , Francesco Sarubbi , Antonius Andreas Johannes Schuwer , Gregory Micha Gommeren , Martijn Pot , Thomas Ludovicus Maria Scholtes
发明人： Stoyan Nihtianov , Arie Johan Van Der Sijs , Bearrach Moest , Petrus Wilhelmus Josephus Maria Kemper , Marc Antonius Maria Haast , Gerardus Wilhelmus Petrus Baas , Lis Karen Nanver , Francesco Sarubbi , Antonius Andreas Johannes Schuwer , Gregory Micha Gommeren , Martijn Pot , Thomas Ludovicus Maria Scholtes
IPC分类号： G21K5/00
CPC分类号： H01L31/103 , G03F7/7085 , G03F7/70958 , H01L31/02161 , H01L31/022408 , H01L31/022416 , H01L31/1185 , H01L31/1804 , Y02E10/547
摘要： The invention relates to a radiation detector, a method of manufacturing a radiation detector and a lithographic apparatus comprising a radiation detector. The radiation detector has a radiation-sensitive surface. The radiation-sensitive surface is sensitive for radiation with a wavelength between 10-200 nm. The radiation detector has a silicon substrate, a dopant layer, a first electrode and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer which is in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to dopant layer. The second electrode is connected to the Silicon substrate.
摘要翻译：本发明涉及一种辐射检测器，一种制造辐射探测器的方法和一种包括辐射探测器的光刻设备。辐射检测器具有辐射敏感表面。辐射敏感表面对波长在10-200nm之间的辐射敏感。辐射检测器具有硅衬底，掺杂剂层，第一电极和第二电极。硅衬底在第一表面侧的表面区域设置有一定导电类型的掺杂分布。掺杂剂层设置在硅衬底的第一表面侧上。掺杂剂层具有掺杂剂材料的第一层和第二层。第二层是与硅衬底的第一表面侧的表面区域接触的扩散层。第一电极连接到掺杂剂层。第二电极连接到硅衬底。

2. 发明申请

US20090021717A1 Radiation Detector, Method of Manufacturing a Radiation Detector, and Lithographic Apparatus Comprising a Radiation Detector 有权
标题翻译：辐射检测器，辐射检测器的制造方法和包含辐射检测器的平版印刷设备
公开(公告)号：US20090021717A1
公开(公告)日：2009-01-22
申请号：US12144874
申请日：2008-06-24
申请人： Stoyan Nihtianov , Arie Johan Van Der Sijs , Bearrach Moest , Petrus Wilhelmus, Joshepus, Maria Kemper , Marc Antonius, Maria Haast , Gerardus Wilhelmus, Petrus, Baas , Lis Karen Nanver , Francesco Sarubbi , Antonius Andreas, Johannes Schuwer , Gregory Micha Gommeren , Martijn Pot , Thomas Ludovicus, Maria Scholtes
发明人： Stoyan Nihtianov , Arie Johan Van Der Sijs , Bearrach Moest , Petrus Wilhelmus, Joshepus, Maria Kemper , Marc Antonius, Maria Haast , Gerardus Wilhelmus, Petrus, Baas , Lis Karen Nanver , Francesco Sarubbi , Antonius Andreas, Johannes Schuwer , Gregory Micha Gommeren , Martijn Pot , Thomas Ludovicus, Maria Scholtes
IPC分类号： G03B27/80 , H01L31/00 , H01L21/00
CPC分类号： G03F7/7085 , H01L21/67225 , H01L31/103
摘要： A radiation detector, a method of manufacturing a radiation detector, and a lithographic apparatus comprising a radiation detector. The radiation detector has a radiation sensitive surface. The radiation sensitive surface is sensitive to radiation wavelengths between 10-200 nm and charged particles. The radiation detector has a silicon substrate, a dopant layer, a first electrode, and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to dopant layer. The second electrode is connected to the silicon substrate.
摘要翻译：放射线检测器，制造放射线检测器的方法以及包括放射线检测器的光刻设备。辐射检测器具有辐射敏感表面。辐射敏感表面对10-200nm和带电粒子之间的辐射波长敏感。辐射检测器具有硅衬底，掺杂剂层，第一电极和第二电极。硅衬底在第一表面侧的表面区域设置有一定导电类型的掺杂分布。掺杂剂层设置在硅衬底的第一表面侧上。掺杂剂层具有掺杂剂材料的第一层和第二层。第二层是与硅衬底的第一表面侧的表面区域接触的扩散层。第一电极连接到掺杂剂层。第二电极连接到硅衬底。

3. 发明授权

US08450820B2 Radiation detector 有权
标题翻译：辐射检测器
公开(公告)号：US08450820B2
公开(公告)日：2013-05-28
申请号：US13006305
申请日：2011-01-13
申请人： Lis Karen Nanver , Thomas Ludovicus Maria Scholtes , Agata {hacek over (S)}akić , Cornelis Sander Kooijman , Gerard Nicolaas Anne van Veen
发明人： Lis Karen Nanver , Thomas Ludovicus Maria Scholtes , Agata {hacek over (S)}akić , Cornelis Sander Kooijman , Gerard Nicolaas Anne van Veen
IPC分类号： H01L31/0224
CPC分类号： H01L31/1185 , H01J37/244 , H01L31/022408 , H01L31/105
摘要： The invention discloses a process for manufacturing a radiation detector for detecting e.g. 200 eV electrons. This makes the detector suited for e.g. use in an Scanning Electron Microscope. The detector is a PIN photodiode with a thin layer of pure boron connected to the p+-diffusion layer. The boron layer is connected to an electrode with an aluminium grid to form a path of low electrical resistance between each given point of the boron layer and the electrode. The invention addresses forming the aluminium grid on the boron layer without damaging the boron layer. To that end the grid of aluminium is formed by covering the boron layer completely with a layer of aluminium and then removing part of the layer of aluminium by etching, the etching comprising a first step (304) of dry etching, the step of dry etching defining the grid but leaving a thin layer of aluminium on the part of the boron layer to be exposed, followed by a second step (308) of wet etching, the step of wet etching completely removing the aluminium from the part of the boron layer to be exposed.
摘要翻译：本发明公开了一种用于制造辐射探测器的方法， 200 eV电子。这使得检测器适合于例如。用于扫描电子显微镜。检测器是PIN光电二极管，具有连接到p +扩散层的纯硼薄层。硼层与具有铝格栅的电极连接，以在硼层的每个给定点和电极之间形成低电阻的路径。本发明涉及在硼层上形成铝格栅而不损坏硼层。为此，通过用一层铝完全覆盖硼层，然后通过蚀刻去除铝的一部分来形成铝格栅，该蚀刻包括干蚀刻的第一步骤（304），干蚀刻步骤限定栅格，但在待暴露的硼层的一部分上留下薄的铝层，随后进行湿式蚀刻的第二步骤（308），将从硼层的一部分完全除去铝的步骤被暴露

4. 发明授权

US08426831B2 Radiation detector, method of manufacturing a radiation detector, and lithographic apparatus comprising a radiation detector 有权
标题翻译：放射线检测器，辐射检测器的制造方法以及包括放射线检测器的光刻设备
公开(公告)号：US08426831B2
公开(公告)日：2013-04-23
申请号：US13399560
申请日：2012-02-17
申请人： Stoyan Nihtianov , Arie Johan Van Der Sijs , Bearrach Moest , Petrus Wilhelmus Josephus Maria Kemper , Marc Antonius Maria Haast , Gerardus Wilhelmus Petrus Baas , Lis Karen Nanver , Francesco Sarubbi , Antonius Andreas Johannes Schuwer , Gregory Micha Gommeren , Martijn Pot , Thomas Ludovicus Maria Scholtes
发明人： Stoyan Nihtianov , Arie Johan Van Der Sijs , Bearrach Moest , Petrus Wilhelmus Josephus Maria Kemper , Marc Antonius Maria Haast , Gerardus Wilhelmus Petrus Baas , Lis Karen Nanver , Francesco Sarubbi , Antonius Andreas Johannes Schuwer , Gregory Micha Gommeren , Martijn Pot , Thomas Ludovicus Maria Scholtes
IPC分类号： G21K5/00
CPC分类号： G03F7/7085 , H01L21/67225 , H01L31/103
摘要： In one an embodiment, there is provided an assembly comprising at least one detector. Each of the at least one detector includes a substrate having a doped region of a first conduction type, a layer of dopant material of a second conduction type located on the substrate, a diffusion layer formed within the substrate and in contact with the layer of dopant material and the doped region of the substrate, wherein a doping profile, which is representative of a doping material concentration of the diffusion layer, increases from the doped region of the substrate to the layer of dopant material, a first electrode connected to the layer of dopant material, and a second electrode connected to the substrate. The diffusion layer is arranged to form a radiation sensitive surface.
摘要翻译：在一个实施例中，提供了一种包括至少一个检测器的组件。所述至少一个检测器中的每一个包括具有第一导电类型的掺杂区的衬底，位于衬底上的第二导电类型的掺杂剂材料层，形成在衬底内并与掺杂剂层接触的扩散层材料和衬底的掺杂区域，其中代表扩散层的掺杂材料浓度的掺杂分布从衬底的掺杂区域增加到掺杂剂材料层，第一电极连接到掺杂剂材料和连接到该衬底的第二电极。扩散层被布置成形成辐射敏感表面。

5. 发明申请

US20110169116A1 Radiation Detector 有权
标题翻译：辐射检测器
公开(公告)号：US20110169116A1
公开(公告)日：2011-07-14
申请号：US13006305
申请日：2011-01-13
申请人： Lis Karen Nanver , Thomas Ludovicus Maria Scholtes , Agata Sakic , Cornelis Sander Kooijman , Gerard Nicolaas Anne van Veen
发明人： Lis Karen Nanver , Thomas Ludovicus Maria Scholtes , Agata Sakic , Cornelis Sander Kooijman , Gerard Nicolaas Anne van Veen
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/1185 , H01J37/244 , H01L31/022408 , H01L31/105
摘要： The invention discloses a process for manufacturing a radiation detector for detecting e.g. 200 eV electrons. This makes the detector suited for e.g. use in an Scanning Electron Microscope. The detector is a PIN photodiode with a thin layer of pure boron connected to the p+-diffusion layer. The boron layer is connected to an electrode with an aluminium grid to form a path of low electrical resistance between each given point of the boron layer and the electrode. The invention addresses forming the aluminium grid on the boron layer without damaging the boron layer. To that end the grid of aluminium is formed by covering the boron layer completely with a layer of aluminium and then removing part of the layer of aluminium by etching, the etching comprising a first step (304) of dry etching, the step of dry etching defining the grid but leaving a thin layer of aluminium on the part of the boron layer to be exposed, followed by a second step (308) of wet etching, the step of wet etching completely removing the aluminium from the part of the boron layer to be exposed.
摘要翻译：本发明公开了一种用于制造辐射探测器的方法， 200 eV电子。这使得检测器适合于例如。用于扫描电子显微镜。检测器是PIN光电二极管，具有连接到p +扩散层的纯硼薄层。硼层与具有铝格栅的电极连接，以在硼层的每个给定点和电极之间形成低电阻的路径。本发明涉及在硼层上形成铝格栅而不损坏硼层。为此，通过用一层铝完全覆盖硼层，然后通过蚀刻去除铝的一部分来形成铝格栅，该蚀刻包括干蚀刻的第一步骤（304），干蚀刻步骤限定栅格，但在待暴露的硼层的一部分上留下薄的铝层，随后进行湿式蚀刻的第二步骤（308），将从硼层的一部分完全除去铝的步骤被暴露

6. 发明申请

US20080315121A1 Radiation detector, method of manufacturing a radiation detector and lithographic apparatus comprising a radiation detector 有权
标题翻译：辐射检测器，辐射检测器的制造方法和包括放射线检测器的光刻设备
公开(公告)号：US20080315121A1
公开(公告)日：2008-12-25
申请号：US11819160
申请日：2007-06-25
申请人： Stoyan Nihtianov , Arie Johan Van Der Sijs , Bearrach Moest , Petrus Wilhelmus Josephus Maria Kemper , Marc Antonius Maria Haast , Gerardus Wilhelmus Petrus Baas , Lis Karen Nanver , Francesco Sarubbi , Antonius Andreas Johannes Schuwer , Gregory Micha Gommeren , Martijn Pot , Thomas Ludovicus Maria Scholtes
发明人： Stoyan Nihtianov , Arie Johan Van Der Sijs , Bearrach Moest , Petrus Wilhelmus Josephus Maria Kemper , Marc Antonius Maria Haast , Gerardus Wilhelmus Petrus Baas , Lis Karen Nanver , Francesco Sarubbi , Antonius Andreas Johannes Schuwer , Gregory Micha Gommeren , Martijn Pot , Thomas Ludovicus Maria Scholtes
IPC分类号： G21K5/00 , H01L31/028 , H01L31/18
CPC分类号： H01L31/103 , G03F7/7085 , G03F7/70958 , H01L31/02161 , H01L31/022408 , H01L31/022416 , H01L31/1185 , H01L31/1804 , Y02E10/547
摘要： The invention relates to a radiation detector, a method of manufacturing a radiation detector and a lithographic apparatus comprising a radiation detector. The radiation detector has a radiation-sensitive surface. The radiation-sensitive surface is sensitive for radiation with a wavelength between 10-200 nm. The radiation detector has a silicon substrate, a dopant layer, a first electrode and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer which is in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to dopant layer. The second electrode is connected to the Silicon substrate.
摘要翻译：本发明涉及一种辐射检测器，一种制造辐射探测器的方法和一种包括辐射探测器的光刻设备。辐射检测器具有辐射敏感表面。辐射敏感表面对波长在10-200nm之间的辐射敏感。辐射检测器具有硅衬底，掺杂剂层，第一电极和第二电极。硅衬底在第一表面侧的表面区域设置有一定导电类型的掺杂分布。掺杂剂层设置在硅衬底的第一表面侧上。掺杂剂层具有掺杂剂材料的第一层和第二层。第二层是与硅衬底的第一表面侧的表面区域接触的扩散层。第一电极连接到掺杂剂层。第二电极连接到硅衬底。

7. 发明授权

US08324598B2 Radiation detector, method of manufacturing a radiation detector, and lithographic apparatus comprising a radiation detector 有权
公开(公告)号：US08324598B2
公开(公告)日：2012-12-04
申请号：US13399560
申请日：2012-02-17
申请人： Stoyan Nihtianov , Arie Johan Van Der Sijs , Bearrach Moest , Petrus Wilhelmus Josephus Maria Kemper , Marc Antonius Maria Haast , Gerardus Wilhelmus Petrus Baas , Lis Karen Nanver , Francesco Sarubbi , Antonius Andreas Johannes Schuwer , Gregory Micha Gommeren , Martijn Pot , Thomas Ludovicus Maria Scholtes
发明人： Stoyan Nihtianov , Arie Johan Van Der Sijs , Bearrach Moest , Petrus Wilhelmus Josephus Maria Kemper , Marc Antonius Maria Haast , Gerardus Wilhelmus Petrus Baas , Lis Karen Nanver , Francesco Sarubbi , Antonius Andreas Johannes Schuwer , Gregory Micha Gommeren , Martijn Pot , Thomas Ludovicus Maria Scholtes
IPC分类号： G21K5/00
摘要： In one an embodiment, there is provided an assembly comprising at least one detector. Each of the at least one detector includes a substrate having a doped region of a first conduction type, a layer of dopant material of a second conduction type located on the substrate, a diffusion layer formed within the substrate and in contact with the layer of dopant material and the doped region of the substrate, wherein a doping profile, which is representative of a doping material concentration of the diffusion layer, increases from the doped region of the substrate to the layer of dopant material, a first electrode connected to the layer of dopant material, and a second electrode connected to the substrate. The diffusion layer is arranged to form a radiation sensitive surface.

8. 发明申请

US20120268722A1 Radiation Detector, Method of Manufacturing a Radiation Detector, and Lithographic Apparatus Comprising a Radiation Detector 有权
标题翻译：辐射检测器，辐射检测器的制造方法和包含辐射检测器的平版印刷设备
公开(公告)号：US20120268722A1
公开(公告)日：2012-10-25
申请号：US13399560
申请日：2012-02-17
申请人： Stoyan NIHTIANOV , Arie Johan Van Der Sijs , Bearrach Moest , Petrus Wilhelmus Josephus Maria Kemper , Marc Antonius Maria Haast , Gerardus Wilhelmus Petrus Baas , Lis Karen Nanver , Francesco Sarubbi , Antonius Andreas Johannes Schuwer , Gregory Micha Gommeren , Martijn Pot , Thomas Ludovicus Maria Sholtes
发明人： Stoyan NIHTIANOV , Arie Johan Van Der Sijs , Bearrach Moest , Petrus Wilhelmus Josephus Maria Kemper , Marc Antonius Maria Haast , Gerardus Wilhelmus Petrus Baas , Lis Karen Nanver , Francesco Sarubbi , Antonius Andreas Johannes Schuwer , Gregory Micha Gommeren , Martijn Pot , Thomas Ludovicus Maria Sholtes
IPC分类号： G03B27/54 , H01L31/18 , H01L21/66 , H01L31/0224
CPC分类号： G03F7/7085 , H01L21/67225 , H01L31/103
摘要： In one an embodiment, there is provided an assembly comprising at least one detector. Each of the at least one detector includes a substrate having a doped region of a first conduction type, a layer of dopant material of a second conduction type located on the substrate, a diffusion layer formed within the substrate and in contact with the layer of dopant material and the doped region of the substrate, wherein a doping profile, which is representative of a doping material concentration of the diffusion layer, increases from the doped region of the substrate to the layer of dopant material, a first electrode connected to the layer of dopant material, and a second electrode connected to the substrate. The diffusion layer is arranged to form a radiation sensitive surface.
摘要翻译：在一个实施例中，提供了一种包括至少一个检测器的组件。所述至少一个检测器中的每一个包括具有第一导电类型的掺杂区的衬底，位于衬底上的第二导电类型的掺杂剂材料层，形成在衬底内并与掺杂剂层接触的扩散层材料和衬底的掺杂区域，其中代表扩散层的掺杂材料浓度的掺杂分布从衬底的掺杂区域增加到掺杂剂材料层，第一电极连接到掺杂剂材料和连接到该衬底的第二电极。扩散层被布置成形成辐射敏感表面。

9. 发明授权

US08138485B2 Radiation detector, method of manufacturing a radiation detector, and lithographic apparatus comprising a radiation detector 有权
标题翻译：放射线检测器，辐射检测器的制造方法以及包括放射线检测器的光刻设备
公开(公告)号：US08138485B2
公开(公告)日：2012-03-20
申请号：US12144874
申请日：2008-06-24
申请人： Stoyan Nihtianov , Arie Johan Van Der Sijs , Bearrach Moest , Petrus Wilhelmus Joseph Maria Kemper , Marc Antonius Maria Haast , Gerardus Wilhelmus Petrus Baas , Lis Karen Nanver , Francesco Sarubbi , Antonius Andreas Johannes Schuwer , Gregory Micha Gommeren , Martijn Pot , Thomas Ludovicus Maria Scholtes
发明人： Stoyan Nihtianov , Arie Johan Van Der Sijs , Bearrach Moest , Petrus Wilhelmus Joseph Maria Kemper , Marc Antonius Maria Haast , Gerardus Wilhelmus Petrus Baas , Lis Karen Nanver , Francesco Sarubbi , Antonius Andreas Johannes Schuwer , Gregory Micha Gommeren , Martijn Pot , Thomas Ludovicus Maria Scholtes
IPC分类号： G21K5/00
CPC分类号： G03F7/7085 , H01L21/67225 , H01L31/103
摘要： A radiation detector, a method of manufacturing a radiation detector, and a lithographic apparatus comprising a radiation detector. The radiation detector has a radiation sensitive surface. The radiation sensitive surface is sensitive to radiation wavelengths between 10-200 nm and charged particles. The radiation detector has a silicon substrate, a dopant layer, a first electrode, and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to dopant layer. The second electrode is connected to the silicon substrate.
摘要翻译：放射线检测器，制造放射线检测器的方法以及包括放射线检测器的光刻设备。辐射检测器具有辐射敏感表面。辐射敏感表面对10-200nm和带电粒子之间的辐射波长敏感。辐射检测器具有硅衬底，掺杂剂层，第一电极和第二电极。硅衬底在第一表面侧的表面区域设置有一定导电类型的掺杂分布。掺杂剂层设置在硅衬底的第一表面侧上。掺杂剂层具有掺杂剂材料的第一层和第二层。第二层是与硅衬底的第一表面侧的表面区域接触的扩散层。第一电极连接到掺杂剂层。第二电极连接到硅衬底。

10. 发明申请

US20080191260A1 Semiconductor Device And Use Thereof 审中-公开
标题翻译：半导体器件及其用途
公开(公告)号：US20080191260A1
公开(公告)日：2008-08-14
申请号：US11576811
申请日：2005-09-26
申请人： Leonardus Cornelis Nicolaas De Vreede , Lis Karen Nanver , Koen Buisman
发明人： Leonardus Cornelis Nicolaas De Vreede , Lis Karen Nanver , Koen Buisman
IPC分类号： H01L29/94
CPC分类号： H01L27/0808
摘要： The semiconductor device comprises a first and a second varactor which are connected in an anti-series configuration. This connection is done such that a first, substantially electrically conductive region is present between a second region with dopant of a first conductivity type and a third region with dopant of the first conductivity type. The second and third regions comprise dopant that is distributed uniformly within the region. The first region is provided with or connected to a contact which has an AC resistance of at least 1 kΩ.
摘要翻译：半导体器件包括以反串联配置连接的第一和第二变容二极管。这样进行连接，使得在具有第一导电类型的掺杂剂的第二区域和具有第一导电类型的掺杂剂的第三区域之间存在第一基本上导电的区域。第二和第三区域包括在该区域内均匀分布的掺杂剂。第一区域设置有或连接到具有至少1kΩ的AC电阻的触点。

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