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    • 1. 发明授权
    • Output buffer circuit and control method therefor
    • 输出缓冲电路及其控制方法
    • US07053660B2
    • 2006-05-30
    • US11121130
    • 2005-05-04
    • Kunihiro ItohOsamu Uno
    • Kunihiro ItohOsamu Uno
    • H03K19/094H03K19/0175
    • H03K19/00361H03K17/167
    • An output buffer includes a first drive circuit that receives an input signal having a sharp waveform and generates an output signal that has a gentle waveform. A second drive circuit is connected to the first drive circuit at an output terminal and has a lower impedance than the first drive circuit. A delay circuit is also connected to the output terminal and generates a delayed output signal. A first control circuit is connected between the delay circuit and the second drive circuit and receives the input signal and the delayed output signal and generates a first control signal used to drive the second drive circuit.
    • 输出缓冲器包括接收具有尖锐波形的输入信号的第一驱动电路,并产生具有平缓波形的输出信号。 第二驱动电路在输出端子处连接到第一驱动电路,并且具有比第一驱动电路低的阻抗。 延迟电路也连接到输出端子并产生延迟的输出信号。 第一控制电路连接在延迟电路和第二驱动电路之间,并接收输入信号和延迟的输出信号,并产生用于驱动第二驱动电路的第一控制信号。
    • 4. 发明申请
    • Interface circuit and constituting method thereof
    • 接口电路及其构成方法
    • US20060022702A1
    • 2006-02-02
    • US10989461
    • 2004-11-17
    • Noriyuki TokuhiroKunihiro Itoh
    • Noriyuki TokuhiroKunihiro Itoh
    • H03K19/003
    • H03K19/018592H03K19/018585H04L25/0278
    • An interface circuit which is connected to a function unit such as a memory reduces the number of structural elements by using structural elements in common, and also realizes a plurality of different function circuits. The interface circuit connected with the function unit uses the structural elements for a plurality of circuits in common, and obtains necessary functions by controlling the structural elements. The interface circuit has first and second electronic devices such as FETs connected in series, and an external terminal, formed at an intermediate connected portion between the first electronic device and the second electronic device, to which the function unit is connected, and constitutes a function circuit part having different functions by controlling the first electronic device and the second electronic device.
    • 连接到诸如存储器的功能单元的接口电路通过共同使用结构元件来减少结构元件的数量,并且还实现多个不同的功能电路。 与功能单元连接的接口电路共同地使用多个电路的结构元件,并且通过控制结构元件来获得必要的功能。 接口电路具有串联连接的诸如FET的第一和第二电子器件,以及形成在第一电子器件与第二电子器件之间的中间连接部分处的功能单元连接的外部端子,并且构成功能 电路部件通过控制第一电子设备和第二电子设备而具有不同的功能。
    • 8. 发明申请
    • Semiconductor device
    • 半导体器件
    • US20050127977A1
    • 2005-06-16
    • US11044030
    • 2005-01-28
    • Kunihiro Itoh
    • Kunihiro Itoh
    • H03K3/356H03K17/10H03K19/0185H03L7/00
    • H03K3/356017H03K17/102
    • In an operation to supply an input signal IN having an amplitude equal to a first power-supply voltage VDD1 to the gate of a PMOS transistor PM51 operating at a second power-supply voltage VDD2 higher than the first power-supply voltage VDD1, the levels of signals are converted by using PMOS transistors PM1 to PM4. The sources of the PMOS transistors PM1 and PM3 are connected to a line of the first power-supply voltage VDD1 whereas the sources of the PMOS transistors PM2 and PM4 are connected to a line of the second power-supply voltage VDD2. The gate of the PMOS transistor PM4 is connected to the drains of the PMOS transistors PM1 and PM2. The gate of the PMOS transistor PM2 is connected to the drains of the PMOS transistors PM3 and PM4. An inverted signal of the input signal IN is supplied to the gate of the PMOS transistor PM1 and the input signal IN is supplied to the gate of the PMOS transistor PM2. The amplitude of the input signal IN is converted from a magnitude equal to a difference between a reference signal VSS and the first power-supply voltage VDD1 into a magnitude equal to a difference between the first power-supply voltage VDD1 and the second power-supply voltage VDD2. A signal obtained as a result of the conversion is output from the PMOS transistors PM1 and PM2, being used for controlling electrical conduction of a PMOS transistor PM51.
    • 在将第一电源电压VDD 1的幅度等于第一电源电压VDD1的输入信号IN的电源供给到高于第一电源电压VDD的第二电源电压VDD2的PMOS晶体管PM51的栅极的操作中 如图1所示,通过使用PMOS晶体管PM 1〜PM 4来转换信号电平。 PMOS晶体管PM 1和PM 3的源极连接到第一电源电压VDD1的一行,而PMOS晶体管PM 2和PM 4的源极连接到第二电源电压VDD的一行 2。 PMOS晶体管PM4的栅极连接到PMOS晶体管PM 1和PM 2的漏极。 PMOS晶体管PM2的栅极连接到PMOS晶体管PM 3和PM 4的漏极。 输入信号IN的反相信号被提供给PMOS晶体管PM1的栅极,并且输入信号IN被提供给PMOS晶体管PM2的栅极。 将输入信号IN的振幅从等于参考信号VSS和第一电源电压VDD 1之间的差的幅度转换成等于第一电源电压VDD 1和第二电源之间的差的幅度 供电电压VDD 2。 作为转换结果而获得的信号从用于控制PMOS晶体管PM 51的导通的PMOS晶体管PM 1和PM 2输出。