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    • 3. 发明申请
    • DEPOSITION SOURCE UNIT, DEPOSITION APPARATUS AND TEMPERATURE CONTROLLER OF DEPOSITION SOURCE UNIT
    • 沉积源单元,沉积源单元的沉积装置和温度控制器
    • US20100126417A1
    • 2010-05-27
    • US12593753
    • 2008-03-25
    • Koyu HasegawaYuji Ono
    • Koyu HasegawaYuji Ono
    • C23C16/52C23C16/00
    • C23C16/4481H01L51/0008H01L51/56H05B33/10
    • A deposition apparatus includes a deposition source unit, a transport mechanism for transporting a vaporized film forming material and a blowing device for blowing off the transported film forming material. The deposition source unit includes a vapor deposition source assembly, a housing and a water cooling jacket. The vapor deposition source assembly includes a gas supply mechanism, a gas inlet and a first material evaporating chamber formed as one body. A heater of the housing heats a film forming material in the first material evaporating chamber and the carrier gas flowing in a plurality of gas passages. The vaporized film forming material is transported by an argon gas. The water cooling jacket is installed apart from an outer peripheral surface of the housing at a certain distance and cools the deposition source unit.
    • 沉积装置包括沉积源单元,用于输送蒸发的成膜材料的输送机构和用于吹出传送的成膜材料的吹塑装置。 沉积源单元包括气相沉积源组件,壳体和水冷套。 气相沉积源组件包括气体供应机构,气体入口和形成为一体的第一材料蒸发室。 外壳的加热器加热第一材料蒸发室中的成膜材料和在多个气体通道中流动的载气。 蒸发的成膜材料通过氩气输送。 水冷却套筒以一定距离与壳体的外周表面分开安装,并冷却沉积源单元。
    • 5. 发明申请
    • EVAPORATING APPARATUS
    • 蒸气装置
    • US20100071623A1
    • 2010-03-25
    • US12441934
    • 2007-10-01
    • Shingo WatanabeYuji OnoKoyu HasegawaMasahiro OgawaKouichi Honda
    • Shingo WatanabeYuji OnoKoyu HasegawaMasahiro OgawaKouichi Honda
    • C23C16/00
    • C23C14/12C23C14/243
    • Disclosed is an evaporating apparatus for performing a film forming process on a target object to be processed by vapor deposition, wherein a processing chamber and a vapor generating chamber are disposed adjacent to each other, gas exhaust mechanisms for depressurizing an inside of the processing chamber and an inside of the vapor generating chamber are installed, a vapor discharge opening for discharging a vapor of the film forming material is disposed in the processing chamber, vapor generating units for vaporizing the film forming material and control valves for controlling a supply of the vapor of the film forming material are disposed in the vapor generating chamber, and flow paths, which are not exposed to an outside of the processing chamber and the vapor generating chamber, for supplying the vapor of the film forming material generated in the vapor generating units to the vapor discharge opening are installed.
    • 本发明公开了一种用于对通过气相沉积处理的目标物体进行成膜处理的蒸发装置,其中处理室和蒸汽发生室彼此相邻设置,用于对处理室内部进行减压的排气机构, 蒸汽发生室内部安装有用于排出成膜材料的蒸汽的蒸汽排放口,用于蒸发成膜材料的蒸汽发生单元和用于控制成膜材料供应的控制阀 成膜材料设置在蒸汽发生室中,并且没有暴露于处理室和蒸气发生室的外部的流路用于将在蒸汽发生单元中产生的成膜材料的蒸汽供应到 安装蒸汽排放口。
    • 6. 发明申请
    • Heat treatment system and method therefore
    • 热处理系统和方法因此
    • US20070166657A1
    • 2007-07-19
    • US11705443
    • 2007-02-13
    • Kazunari SakataKoyu HasegawaKeiichi KatabuchiShingo WatanabeShinya MochizukiMotoki AkimotoHiroshi Motono
    • Kazunari SakataKoyu HasegawaKeiichi KatabuchiShingo WatanabeShinya MochizukiMotoki AkimotoHiroshi Motono
    • F27D1/18
    • H01L21/67373F27B5/04F27B17/0025F27D3/0084F27D5/0037H01L21/67017H01L21/67109H01L21/67379H01L21/67389H01L21/67393H01L21/67739H01L21/67769H01L21/67772H01L21/67775H01L21/67778H01L21/68707Y10S269/903Y10S414/135Y10S414/137
    • There is provided a vertical heat treatment system capable of simplifying the structure of various mechanisms in the vicinity of an opening which is formed in a partition wall separating a housing-box transfer area from a treating-object transfer area (a wafer transfer area), and of contributing to space saving, when an object to be treated is carried in the vertical heat treatment system through the opening to carry out a predetermined treatment. In a vertical heat treatment system for carrying an object W to be treated, which is housed in a treating-object housing box 2 closed by an opening/closing lid 10, in a treating-object transfer area 46 via an opening 28, which is formed in a partition wall 26 separating a housing-box transfer area 44 for transferring the treating-object housing box from the treating-object transfer area 46 in an atmosphere of an inert gas, to carry out a predetermined treatment, a standby box transfer means 60 is provided in the housing-box transfer area for holding a treating-object housing box, which houses therein the next object to be carried in the treating-object transfer area, in the vicinity of the opening to cause the treating-object housing box to stand by. Thus, when the object to be treated is carried in via the opening of the partition wall, which separates the housing-box transfer area from the treating-object transfer area (wafer transfer area), to carry out a predetermined treatment, the structure of various mechanisms in the vicinity of the opening is simplified, and the space is saved.
    • 提供了一种垂直式热处理系统,其能够简化形成在将箱体搬送区域从处理对象搬送区域(晶片转移区域)分离的分隔壁的开口附近的各种机构的结构, 并且当通过开口在垂直热处理系统中承载待处理物体时,有助于节省空间,以进行预定处理。 在用于承载被打开/关闭盖10封闭的处理对象收纳箱2中的待处理对象物W的立式热处理系统经由开口28在处理对象转移区域46中 形成在隔离壁26中,隔离箱26分离用于在惰性气体气氛中将处理对象收纳箱从处理对象转移区域46传送的收纳箱传送区域44,以执行预定处理;待机箱传送装置 60设置在用于保持处理对象收纳箱的收纳箱传送区域中,处理对象收纳箱在其内容纳有待处理对象转移区域中的下一个物体的开口附近,从而使处理对象收纳箱 待命 因此,当待处理物体经由将箱体转移区域从处理对象转移区域(晶片转移区域)分离的分隔壁的开口进行预定处理时,结构 简化了开口附近的各种机构,节省了空间。