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1. 发明授权

US07592261B2 Method for suppressing charging of component in vacuum processing chamber of plasma processing system and plasma processing system 失效
标题翻译：用于等离子体处理系统和等离子体处理系统的真空处理室中的组分的充电抑制方法
公开(公告)号：US07592261B2
公开(公告)日：2009-09-22
申请号：US10509338
申请日：2003-03-27
申请人： Takehiro Ueda , Katsuyuki Koizumi , Kouki Suzuki
发明人： Takehiro Ueda , Katsuyuki Koizumi , Kouki Suzuki
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01J37/32431 , H01J2237/0206
摘要： When the state of the vacuum processing chamber is switched to an idle state in which an insulating fluid is circulated while a semiconductor wafer W is not placed in the vacuum processing chamber and no plasma is generated in the vacuum processing chamber, nitrogen gas purging (N2 purging) of the inside of the vacuum processing chamber is started, and the pressure in the vacuum processing chamber is controlled to a predetermined level, for example, about 27 Pa (200 mTorr). This makes it possible to prevent a component in the vacuum processing chamber of a plasma processor from being charged to high voltage, so that an insulative material can be protected against breakdown caused by electric discharge or the like.
摘要翻译：当真空处理室的状态切换到绝缘流体循环的空闲状态，而半导体晶片W未放置在真空处理室中并且在真空处理室中不产生等离子体时，氮气吹扫（N2 清洗）真空处理室的内部，并且将真空处理室中的压力控制在预定水平，例如约27Pa（200mTorr）。这使得可以防止等离子体处理器的真空处理室中的部件被充电到高电压，使得可以保护绝缘材料免受由放电等引起的击穿。

2. 发明申请

US20080042328A1 Substrate Processing Apparatus and Substrate Rotating Device 有权
标题翻译：基板加工装置及基板旋转装置
公开(公告)号：US20080042328A1
公开(公告)日：2008-02-21
申请号：US11666349
申请日：2005-10-27
申请人： Sumi Tanaka , Kouki Suzuki
发明人： Sumi Tanaka , Kouki Suzuki
IPC分类号： C21D9/00 , C21B3/00
CPC分类号： H01L21/68792 , H01L21/67109
摘要： Disclosed is a substrate rotating device improved such that an amount of particle generation is remarkably reduced, and a substrate processing apparatus provided with the substrate rotating device. The substrate rotating device includes a driven rotary member, e.g., a driven ring, connected directly or indirectly to a substrate support member for supporting a substrate; and a driving rotary member, e.g., a drive rotor, that rotates in abutment against the driven rotary member to drive the driven rotary member for rotation. The driven rotary member and the driving rotary member are formed of ceramic materials, whose values of fracture toughness defined by JIS R1607 are different from each other, and/or whose values of three-point bending strength defined by JIS R1601 are different from each other.
摘要翻译：公开了一种改善了颗粒产生量显着降低的基板旋转装置以及设置有基板旋转装置的基板处理装置。基板旋转装置包括直接或间接地连接到用于支撑基板的基板支撑构件的从动旋转构件，例如从动环; 以及驱动旋转构件，例如驱动转子，其旋转抵靠从动旋转构件以驱动从动旋转构件旋转。被驱动的旋转构件和驱动旋转构件由JIS R1607定义的断裂韧度值彼此不同的陶瓷材料形成，和/或由JIS R1601定义的三点弯曲强度的值彼此不同。

3. 发明授权

US07250094B2 Heat treatment apparatus 失效
标题翻译：热处理设备
公开(公告)号：US07250094B2
公开(公告)日：2007-07-31
申请号：US11350766
申请日：2006-02-10
申请人： Sumi Tanaka , Takayuki Kamaishi , Kouki Suzuki
发明人： Sumi Tanaka , Takayuki Kamaishi , Kouki Suzuki
IPC分类号： H01L21/306 , F27B5/14
CPC分类号： H01L21/67017 , C23C16/45521 , C23C16/4584 , H01L21/67115
摘要： A processing gas is prevented from entering into a space below a placement table. A supporting surface for supporting the lower face of a placement table is provided at an inner circumferential portion of the upper end of a support column. A circumferentially extending purge gas groove is formed outside the supporting surface, in an intermediate circumferential portion of the upper end of the support column. A narrow flow path is provided outside the purge gas groove, at a position corresponding to an outer circumferential portion of the upper end of the support column. A purge gas diffuses in the circumferential direction in the purge gas groove and flows out to the outside from the narrow flow path. Such a flow of the purge gas prevents a processing gas from entering into the purge gas groove and a space below the placement table.
摘要翻译：防止处理气体进入放置台下方的空间。用于支撑放置台的下表面的支撑表面设置在支撑柱的上端的内周部。在支撑柱的上端的中间圆周部分中，在支撑表面的外侧形成周向延伸的吹扫气体槽。在吹扫气体槽的外部，在对应于支撑柱的上端的外周部的位置处设置窄流路。吹扫气体在吹扫气体槽中沿圆周方向扩散，并从窄流路流出到外部。吹扫气体的这种流动防止了处理气体进入吹扫气体槽和放置台下方的空间。

4. 外观设计

USD658692S1 Liner for plasma processing apparatus 有权
标题翻译：等离子体处理设备的衬板
公开(公告)号：USD658692S1
公开(公告)日：2012-05-01
申请号：US29401103
申请日：2011-09-07
申请人： Kouki Suzuki , Daisuke Toriya , Koichi Yamazaki
设计人： Kouki Suzuki , Daisuke Toriya , Koichi Yamazaki

5. 外观设计

USD658691S1 Liner for plasma processing apparatus 有权
公开(公告)号：USD658691S1
公开(公告)日：2012-05-01
申请号：US29400581
申请日：2011-08-30
申请人： Kouki Suzuki , Jun Yamashita , Masakazu Ban , Atsushi Ueda
设计人： Kouki Suzuki , Jun Yamashita , Masakazu Ban , Atsushi Ueda

6. 发明授权

US07842229B2 Substrate processing apparatus and substrate rotating device 有权
标题翻译：基板加工装置和基板旋转装置
公开(公告)号：US07842229B2
公开(公告)日：2010-11-30
申请号：US11666349
申请日：2005-10-27
申请人： Sumi Tanaka , Kouki Suzuki
发明人： Sumi Tanaka , Kouki Suzuki
IPC分类号： C21D9/00 , C21B3/00
CPC分类号： H01L21/68792 , H01L21/67109
摘要： Disclosed is a substrate rotating device improved such that an amount of particle generation is remarkably reduced, and a substrate processing apparatus provided with the substrate rotating device. The substrate rotating device includes a driven rotary member, e.g., a driven ring, connected directly or indirectly to a substrate support member for supporting a substrate; and a driving rotary member, e.g., a drive rotor, that rotates in abutment against the driven rotary member to drive the driven rotary member for rotation. The driven rotary member and the driving rotary member are formed of ceramic materials, whose values of fracture toughness defined by JIS R1607 are different from each other, and/or whose values of three-point bending strength defined by JIS R1601 are different from each other.
摘要翻译：公开了一种改善了颗粒产生量显着降低的基板旋转装置以及设置有基板旋转装置的基板处理装置。基板旋转装置包括直接或间接地连接到用于支撑基板的基板支撑构件的从动旋转构件，例如从动环; 以及驱动旋转构件，例如驱动转子，其旋转抵靠从动旋转构件以驱动从动旋转构件旋转。被驱动的旋转构件和驱动旋转构件由JIS R1607定义的断裂韧度值彼此不同的陶瓷材料形成，和/或由JIS R1601定义的三点弯曲强度的值彼此不同。

7. 发明申请

US20080011734A1 HEAT-TREATING APPARATUS 有权
标题翻译：热处理设备
公开(公告)号：US20080011734A1
公开(公告)日：2008-01-17
申请号：US11773241
申请日：2007-07-03
申请人： Sumi TANAKA , Takayuki Kamaishi , Kouki Suzuki
发明人： Sumi TANAKA , Takayuki Kamaishi , Kouki Suzuki
IPC分类号： F27B5/14
CPC分类号： H01L21/67017 , C23C16/45521 , C23C16/4584 , H01L21/67115
摘要： A processing gas is prevented from entering into a space below a placement table. A supporting surface 62 for supporting the lower face of a placement table 58 is provided at an inner circumferential portion of the upper end of a support 56. A circumferentially extending purge gas groove 64 is formed outside the supporting surface 62, in an intermediate circumferential portion of the upper end of the support 56. A narrow flow path 68 is provided outside the purge gas groove 64, at a position corresponding to an outer circumferential portion of the upper end of the support 56. A purge gas fed from purge gas-feeding means 66 into the purge gas groove diffuses in the circumferential direction in the purge gas groove 64 and flows out to the outside from the narrow flow path 68. Such a flow of the purge gas prevents a processing gas from entering into the purge gas groove 64 and a space S1 below the placement table.
摘要翻译：防止处理气体进入放置台下方的空间。用于支撑放置台58的下表面的支撑表面62设置在支撑件56的上端的内圆周部分。周向延伸的净化气体槽64形成在支撑表面62的外侧，在支撑件56的上端的中间圆周部分。在对应于支撑件56的上端的外周部分的位置处，在吹扫气体槽64的外侧设置有窄流路68。从净化气体供给装置66供给到净化气体槽中的净化气体在净化气体槽64中沿圆周方向扩散，从窄流路68流出到外部。吹扫气体的这种流动防止了处理气体进入清洗气体槽64和放置台下面的空间S1。

8. 发明申请

US20050146277A1 Method for suppressing charging of component in vacuum processing chamber of plasma processing system and plasma processing system 失效
标题翻译：用于等离子体处理系统和等离子体处理系统的真空处理室中的组分的充电抑制方法
公开(公告)号：US20050146277A1
公开(公告)日：2005-07-07
申请号：US10509338
申请日：2003-03-27
申请人： Takehiro Ueda , Katsuyuki Koizumi , Kouki Suzuki
发明人： Takehiro Ueda , Katsuyuki Koizumi , Kouki Suzuki
IPC分类号： H05H1/46 , H01J37/32 , H01L21/205 , H01L21/3065 , H01J7/24
CPC分类号： H01J37/32431 , H01J2237/0206
摘要： When the state of the vacuum processing chamber is switched to an idle state in which an insulating fluid is circulated while a semiconductor wafer W is not placed in the vacuum processing chamber and no plasma is generated in the vacuum processing chamber, nitrogen gas purging (N2 purging) of the inside of the vacuum processing chamber is started, and the pressure in the vacuum processing chamber is controlled to a predetermined level, for example, about 27 Pa (200 mTorr). This makes it possible to prevent a component in the vacuum processing chamber of a plasma processor from being charged to high voltage, so that an insulative material can be protected against breakdown caused by electric discharge or the like.
摘要翻译：当真空处理室的状态切换到绝缘流体循环的空闲状态，而半导体晶片W未放置在真空处理室中并且在真空处理室中不产生等离子体时，氮气吹扫（N 开始真空处理室内部的清洗），并将真空处理室中的压力控制在预定水平，例如约27Pa（200mTorr）。这使得可以防止等离子体处理器的真空处理室中的部件被充电到高电压，使得可以保护绝缘材料免受由放电等引起的击穿。

9. 外观设计

USD678228S1 Chamber block 有权
标题翻译：腔室
公开(公告)号：USD678228S1
公开(公告)日：2013-03-19
申请号：US29400573
申请日：2011-08-30
申请人： Kouki Suzuki , Kazuhiro Furuki , Koichi Yamazaki
设计人： Kouki Suzuki , Kazuhiro Furuki , Koichi Yamazaki

10. 外观设计

USD658693S1 Liner for plasma processing apparatus 有权
公开(公告)号：USD658693S1
公开(公告)日：2012-05-01
申请号：US29401106
申请日：2011-09-07
申请人： Kouki Suzuki , Jun Yamashita , Masakazu Ban , Atsushi Ueda
设计人： Kouki Suzuki , Jun Yamashita , Masakazu Ban , Atsushi Ueda

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