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1. 发明申请

US20140219020A1 MEMORY SYSTEM COMPRISING NONVOLATILE MEMORY DEVICE AND PROGRAM METHOD THEREOF 有权
标题翻译：包含非易失性存储器件的存储器系统及其程序方法
公开(公告)号：US20140219020A1
公开(公告)日：2014-08-07
申请号：US14161886
申请日：2014-01-23
申请人： DONGHUN KWAK , KITAE PARK
发明人： DONGHUN KWAK , KITAE PARK
IPC分类号： G11C16/10
CPC分类号： G11C16/10 , G11C11/5628 , G11C16/22
摘要： A memory system includes a nonvolatile memory device, and a memory controller configured to control the nonvolatile memory device such that memory cells connected with a selected row of the nonvolatile memory device are programmed by one of a first program mode and a second program mode. At the first program mode, a plurality of logical pages corresponding in number to a maximum page number is stored at the memory cells, and at the second program mode, one or more logical pages the number of which is less than the maximum page number are stored at the memory cells using a bias condition that is different from that used in the first program mode.
摘要翻译：存储器系统包括非易失性存储器设备和配置成控制非易失性存储器件的存储器控制器，使得与非易失性存储器件的选定行连接的存储单元通过第一程序模式和第二程序模式之一进行编程。在第一编程模式下，存储器单元中存储有多个对应于最大页号的逻辑页，并且在第二编程模式下，一个或多个逻辑页数小于最大页数，使用与第一程序模式中使用的偏差条件不同的偏置条件存储在存储器单元。

2. 发明申请

US20150036426A1 NONVOLATILE MEMORY DEVICE AND METHOD OF PROGRAM VERIFYING THE SAME 有权
标题翻译：非易失性存储器件及其验证方法
公开(公告)号：US20150036426A1
公开(公告)日：2015-02-05
申请号：US14284031
申请日：2014-05-21
申请人： DONGHUN KWAK , HYUN-WOOK PARK , KITAE PARK
发明人： DONGHUN KWAK , HYUN-WOOK PARK , KITAE PARK
IPC分类号： G11C16/10 , G11C16/34 , G11C16/26
CPC分类号： G11C16/3459 , G11C16/0483 , G11C16/10 , G11C16/26
摘要： A program method of a three-dimensional nonvolatile memory device is provided which includes executing at least one program loop including an operation of programming selected memory cells of a selected string turned on by a selected string selection transistor and an operation of verifying whether programming of the memory cells is passed; and applying a negative counter voltage to a selected word line connected to the selected memory cells of the selected string at least once during an interval of the verify operation where there are turned on string selection transistors of unselected strings connected through the same bit line as that of the selected string.
摘要翻译：提供了一种三维非易失性存储器件的编程方法，包括执行至少一个程序循环，该程序循环包括对由所选择的字符串选择晶体管导通的所选字符串的选定存储单元进行编程的操作，以及验证是否对记忆细胞通过; 以及在验证操作的间隔期间至少一次将连接到所选字符串的所选择的存储单元的选定字线施加负的反电压，其中通过与该相同的位线连接的未选择的串连接的串选择晶体管，的选定字符串。

3. 发明申请

US20150003152A1 STORAGE DEVICE AND A WRITE METHOD THEREOF 有权
标题翻译：存储设备及其写入方法
公开(公告)号：US20150003152A1
公开(公告)日：2015-01-01
申请号：US14188889
申请日：2014-02-25
申请人： DongHun KWAK , Dongkyo SHIM , KITAE PARK , Hyun-Wook PARK
发明人： DongHun KWAK , Dongkyo SHIM , KITAE PARK , Hyun-Wook PARK
IPC分类号： G11C16/12
CPC分类号： G11C16/10 , G11C11/5628 , G11C16/0483 , G11C16/3459 , G11C16/349 , G11C16/3495
摘要： A write method of a storage device includes determining whether to perform a coarse program operation based on information about memory cells of a memory device, in response to a determination that the coarse program operation is to be performed, programming data in the memory device by performing the coarse program operation and a fine program operation, and in response to a determination that the coarse program operation is not to be performed, programming data in the memory device by performing the fine program operation.
摘要翻译：存储装置的写入方法包括响应于要执行粗略编程操作的确定，基于关于存储器件的存储器单元的信息来确定是否执行粗略的程序操作，通过执行存储器件中的程序数据粗程序操作和精细程序操作，并且响应于不执行粗程序操作的确定，通过执行精细程序操作来在存储器件中编程数据。

4. 发明申请

US20150332777A1 STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE AND READ METHOD THEREOF 审中-公开
标题翻译：包含非易失性存储器件的存储器件及其读取方法
公开(公告)号：US20150332777A1
公开(公告)日：2015-11-19
申请号：US14692494
申请日：2015-04-21
申请人： SANGYONG YOON , DONGHUN KWAK , KITAE PARK , MYUNG-HOON CHOI , SEUNG-CHEOL HAN
发明人： SANGYONG YOON , DONGHUN KWAK , KITAE PARK , MYUNG-HOON CHOI , SEUNG-CHEOL HAN
IPC分类号： G11C16/26 , G06F11/10 , G11C29/52 , G11C16/04
CPC分类号： G11C16/26 , G06F11/1068 , G06F11/1072 , G11C11/5642 , G11C16/0466 , G11C16/0483 , G11C29/52 , G11C2013/0057
摘要： A read method of a nonvolatile memory device includes reading data from a selected memory area of the nonvolatile memory device according to a first read voltage; detecting and correcting an error of the read data; and deciding a second read voltage for reading the selected memory area when an error of the read data is uncorrectable. The second read voltage is decided according to either the number of logical 0s or 1s included in the read data, or a ratio of logical 1s to logical 0s in the read data.
摘要翻译：非易失性存储器件的读取方法包括根据第一读取电压从非易失性存储器件的选定存储区读取数据; 检测和校正读取数据的错误; 以及当读取的数据的错误是不可校正时，决定用于读取所选择的存储区域的第二读取电压。第二读取电压根据读取数据中包括的逻辑0或1的数量，或读取数据中的逻辑1与逻辑0的比率来决定。

5. 发明申请

US20160005478A1 MEMORY SYSTEM AND METHOD OF DRIVING MEMORY SYSTEM USING ZONE VOLTAGES 审中-公开
标题翻译：使用区域电压驱动存储器系统的存储器系统和方法
公开(公告)号：US20160005478A1
公开(公告)日：2016-01-07
申请号：US14855433
申请日：2015-09-16
申请人： SANG-WAN NAM , MINSU KIM , KANG-BIN LEE , KITAE PARK
发明人： SANG-WAN NAM , MINSU KIM , KANG-BIN LEE , KITAE PARK
IPC分类号： G11C16/24 , G11C16/04 , G11C16/26 , G11C16/08 , G11C16/14
CPC分类号： G11C16/24 , G11C5/147 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/14 , G11C16/16 , G11C16/26 , G11C16/3418 , G11C16/3459
摘要： A method is provided for driving a nonvolatile memory device, including multiple strings, where each string is formed by penetrating plate-shaped word lines stacked on a substrate. The method includes configuring the word lines of a string in multiple zones based on zone configuration information, and applying zone voltages to the zones, respectively. The zone configuration information is varied according to a mode of operation.
摘要翻译：提供一种用于驱动包括多个串的非易失性存储器件的方法，其中通过穿过堆叠在衬底上的板状字线形成每个串。该方法包括基于区域配置信息配置多个区域中的字符串的字线，并且将区域电压分别应用于区域。区域配置信息根据操作模式而变化。

6. 发明申请

US20140334232A1 3D FLASH MEMORY DEVICE HAVING DIFFERENT DUMMY WORD LINES AND DATA STORAGE DEVICES INCLUDING SAME 有权
标题翻译：具有不同密码字线的3D闪存存储器件和包括其中的数据存储器件
公开(公告)号：US20140334232A1
公开(公告)日：2014-11-13
申请号：US14162905
申请日：2014-01-24
申请人： SANG-WAN NAM , KITAE PARK
发明人： SANG-WAN NAM , KITAE PARK
IPC分类号： G11C16/16 , G11C16/04
CPC分类号： G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/16 , G11C16/3427
摘要： A three-dimensional (3D) flash memory includes a first dummy word line disposed between a ground select line and a lowermost main word line, and a second dummy word line of different word line configuration disposed between a string select line and an upper most main word line.
摘要翻译：三维（3D）闪速存储器包括设置在接地选择线和最下面的主字线之间的第一虚拟字线和设置在弦选择线和最上主字线之间的不同字线配置的第二虚拟字线字线。

7. 发明申请

US20160322107A1 3D FLASH MEMORY DEVICE HAVING DIFFERENT DUMMY WORD LINES AND DATA STORAGE DEVICES INCLUDING SAME 审中-公开
标题翻译：具有不同密码字线的3D闪存存储器件和包括其中的数据存储器件
公开(公告)号：US20160322107A1
公开(公告)日：2016-11-03
申请号：US15210628
申请日：2016-07-14
申请人： SANG-WAN NAM , KITAE PARK
发明人： SANG-WAN NAM , KITAE PARK
IPC分类号： G11C16/04 , G11C16/10 , G11C16/16 , G11C16/08
CPC分类号： G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/16 , G11C16/3427
摘要： A three-dimensional (3D) flash memory includes a first dummy word line disposed between a ground select line and a lowermost main word line, and a second dummy word line of different word line configuration disposed between a string select line and an upper most main word line.
摘要翻译：三维（3D）闪速存储器包括设置在接地选择线和最下面的主字线之间的第一虚拟字线和设置在弦选择线和最上主字线之间的不同字线配置的第二虚拟字线字线。

8. 发明申请

US20150221351A1 NONVOLATILE MEMORY DEVICE AND METHOD OF DRIVING WORD LINE OF THE NONVOLATILE MEMORY 有权
标题翻译：非易失性存储器件的驱动和非易失性存储器的字线的方法
公开(公告)号：US20150221351A1
公开(公告)日：2015-08-06
申请号：US14567652
申请日：2014-12-11
申请人： SANG-WON PARK , KITAE PARK , SANG-WON SHIM
发明人： SANG-WON PARK , KITAE PARK , SANG-WON SHIM
IPC分类号： G11C7/12 , G11C7/04 , G11C7/10 , G11C5/02
CPC分类号： G11C8/08 , G11C5/02 , G11C7/04 , G11C8/10 , G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/30 , G11C16/32
摘要： A word line driving method is for a nonvolatile memory device including a plurality of memory blocks having a plurality of strings which is formed in a direction perpendicular to a substrate and connected between bit lines and a common source line. The method includes applying an offset pulse to a word line for a predetermined time to shorten a word line setting time, and applying a target pulse having a level which is higher or lower than a level of the offset pulse to the word line after the predetermined time.
摘要翻译：字线驱动方法是用于非易失性存储器件，其包括具有多个串的多个存储块，所述多个存储块形成在与衬底垂直的方向上并连接在位线和公共源极线之间。该方法包括将偏移脉冲施加到字线预定时间以缩短字线设置时间，并且在预定的时间之后将具有高于或低于偏移脉冲的电平的电平的目标脉冲施加到字线时间。

9. 发明申请

US20150049545A1 NONVOLATILE MEMORY DEVICE, MEMORY SYSTEM COMPRISING SAME, AND METHOD OF PROGRAMMING SAME 有权
标题翻译：非易失性存储器件，包含其的存储器系统及其编程方法
公开(公告)号：US20150049545A1
公开(公告)日：2015-02-19
申请号：US14278743
申请日：2014-05-15
申请人： JONGHOO JO , HYUN JUN YOON , KITAE PARK , DONGKYO SHIM
发明人： JONGHOO JO , HYUN JUN YOON , KITAE PARK , DONGKYO SHIM
IPC分类号： G11C16/34 , G11C16/10
CPC分类号： G11C16/3459 , G11C16/0483 , G11C16/08 , G11C16/10
摘要： A method of programming a nonvolatile memory device comprises performing an N-th program loop based on state data stored in data latches according to a default state ordering, determining whether conversion of the default state ordering is required according to a predetermined criterion, as a consequence of determining that conversion of the default state ordering is required, converting all or part of the state data stored in the data latches from the default state ordering to another state ordering, and performing a (N+1)th program loop based on the converted state data.
摘要翻译：一种非易失性存储器件的编程方法包括：根据默认状态顺序，根据存储在数据锁存器中的状态数据执行第N个程序循环，确定是否需要根据预定标准转换默认状态排序，结果确定需要转换默认状态排序，将存储在数据锁存器中的全部或部分状态数据从默认状态排序转换到另一状态排序，以及基于转换的第（N + 1）个程序循环执行状态数据。

10. 发明申请

US20120327711A1 NONVOLATILE MEMORY DEVICE, MEMORY SYSTEM COMPRISING SAME, AND METHOD OF OPERATING SAME 有权
标题翻译：非易失性存储器件，包含其的存储器系统及其操作方法
公开(公告)号：US20120327711A1
公开(公告)日：2012-12-27
申请号：US13527641
申请日：2012-06-20
申请人： DONGKYO SHIM , JAEYONG JEONG , JU SEOK LEE , OHSUK KWON , KITAE PARK , HYUNJUN YOON
发明人： DONGKYO SHIM , JAEYONG JEONG , JU SEOK LEE , OHSUK KWON , KITAE PARK , HYUNJUN YOON
IPC分类号： G11C16/26
CPC分类号： G11C16/26 , G11C11/5642 , G11C16/0483
摘要： A method of operating a nonvolatile memory device comprises receiving a read command from a memory controller, determining a read mode of the nonvolatile memory device, selecting a read voltage based on the read mode, and performing a read operation on memory cells of a selected page of the nonvolatile memory device using the selected read voltage.
摘要翻译：一种操作非易失性存储器件的方法包括从存储器控制器接收读取命令，确定非易失性存储器件的读取模式，基于读取模式选择读取电压，以及对所选择的页面的存储器单元执行读取操作使用所选择的读取电压的非易失性存储器件。

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