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    • 5. 发明授权
    • Self-aligned process for fabrication of interconnect structures in
semiconductor applications
    • 用于制造半导体应用中的互连结构的自对准工艺
    • US5112448A
    • 1992-05-12
    • US442238
    • 1989-11-28
    • Kishore K. Chakravorty
    • Kishore K. Chakravorty
    • H01L21/288H01L21/48H01L21/768H05K3/10H05K3/24H05K3/46
    • H01L21/76885H01L21/2885H01L21/4846H01L21/76877H05K3/107H05K3/243H05K3/4644Y10S205/917
    • A method for fabricating conductors in dielectric trenches in a self-aligned manner. Interconnect modules with a high conductor density are achieved by using a copper-polyimide system as a versatile packaging approach. A photosensitive polyimide is applied to a substrate and lithographically patterned to form polyimide steps having a characteristic positive slope, between which are defined trenches in which the substrate is exposed. A thin electroplating seed layer is deposited over the polyimide steps and the substrate. Copper is electroplated into trenches, but does not plate onto the tops of the polyimide steps, since the electroplating seed layer at that location is not electrically connected to the electroplating seed layer in the bottom of the trenches. The electroplating seed layer on top of the polyimide steps is then removed by chemical etching, plasma machining, or ion-milling. A planar structure is eventually obtained without the use of multiple coatings of polyimide layers or any additional masking layers or lift-off layers.
    • 一种以自对准方式在介质沟槽中制造导体的方法。 具有高导体密度的互连模块通过使用铜 - 聚酰亚胺系统作为通用封装方法来实现。 将感光性聚酰亚胺涂布在基板上并进行光刻图案化以形成具有特征正斜率的聚酰亚胺步骤,在其间形成有暴露基板的界定的沟槽。 在聚酰亚胺步骤和基底上沉积薄的电镀种子层。 由于在该位置处的电镀种子层不与沟槽底部的电镀种子层电连接,所以将铜电镀到沟槽中,但不会沉积在聚酰亚胺步骤的顶部上。 然后通过化学蚀刻,等离子体加工或离子研磨去除聚酰亚胺步骤顶部的电镀种子层。 最终获得平面结构,而不使用多层聚酰亚胺层或任何附加掩模层或剥离层。
    • 10. 发明授权
    • Multiple tier array capacitor
    • 多层阵列电容
    • US06532143B2
    • 2003-03-11
    • US09751612
    • 2000-12-29
    • David G. FigueroaKishore K. ChakravortyHuong T. DoLarry Eugene MosleyJorge Pedro RodriguezKen Brown
    • David G. FigueroaKishore K. ChakravortyHuong T. DoLarry Eugene MosleyJorge Pedro RodriguezKen Brown
    • H01G430
    • H01G4/30H01L23/642H01L2224/16225H01L2924/00014H05K1/0298H05K1/162H01L2224/0401
    • A capacitor includes multiple tiers (302, 304, 306, 1210, 1212, 1310, 1312, 1380, FIGS. 3, 12, 13), which provide capacitance to a load at different inductance values. Each tier includes multiple layers (311-325, 1220, 1222, 1320, 1322, 1382, FIGS. 3, 12, 13) of patterned conductive material, which are separated by layers of dielectric material. In one embodiment, tiers are stacked in a vertical direction, and are electrically connected through vias (330, 332, 334, 1230, 1232, FIGS. 3, 12) that extend through some or all of the tiers. In another embodiment, one or more tiers (1310, 1312, FIG. 13) are located in a center region (1404, FIG. 14) of the capacitor, and one or more other tiers (1380, FIG. 13) are located in a peripheral region (1408, FIG. 14) of the capacitor. In that embodiment, the center tiers and peripheral tiers are electrically connected through one or more additional layers (1370, FIG. 13) of patterned conductive material. The capacitors of the various embodiments can be used as discrete devices, which are mountable on or embeddable within a housing (e.g., a package, interposer, socket or PC board), or they can be integrally fabricated within the housing.
    • 电容器包括多层(302,304,306,1210,1212,1310,1312,1380,图3,12,13),其以不同的电感值向负载提供电容。 每个层包括被介电材料层隔开的图案化导电材料的多层(311-325,1220,1222,1320,1322,1382,图3,12,13)。 在一个实施例中,层是沿垂直方向堆叠的,并且通过延伸穿过一些或所有层的通孔(330,332,334,1230,1232,图3,12)电连接。 在另一个实施例中,一个或多个层(1310,1312,图13)位于电容器的中心区域(1404,图14)中,并且一个或多个其他层(图13中的1380)位于 电容器的外围区域(1408,图14)。 在该实施例中,中心层和外围层通过图案化导电材料的一个或多个附加层(1370,图13)电连接。 各种实施例的电容器可以用作可安装在壳体(例如,封装,插入件,插座或PC板)中或嵌入其中的分立器件,或者它们可以一体地制造在壳体内。