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    • 3. 发明申请
    • Vertical cavity surface emitting laser and fabricating method thereof
    • 垂直腔面发射激光器及其制造方法
    • US20080069168A1
    • 2008-03-20
    • US11891695
    • 2007-08-13
    • Young-Hyun KimIn KimDo-Young Rhee
    • Young-Hyun KimIn KimDo-Young Rhee
    • H01S5/026H01L33/00
    • H01S5/18375H01S5/026H01S5/18311H01S5/18377H01S5/18388H01S2301/166
    • A vertical cavity surface emitting laser and a method for fabricating thereof are disclosed. The laser includes: a reflective laser formed at a center portion of a contact layer, and an upper electrode that is separated from a reflective lens and that encloses the reflective lens. The method for fabricating the laser includes the steps of: sequentially growing a lower reflective mirror, an oscillation region, an upper reflective mirror, and a contact layer on a upper surface of a semiconductor substrate; forming a lower electrode on a lower surface of the semiconductor substrate; forming, on the contact layer, an annular mask with a mesa shaped opening at the center portion; growing, through the opening of the mask with a mesa structure, a reflective mirror with a center and peripheral portions of different thickness; and forming annular upper electrode surrounding the reflective mirror after removing the mask.
    • 公开了一种垂直腔表面发射激光器及其制造方法。 激光器包括:形成在接触层的中心部分的反射激光器,以及与反射透镜分离并且包围反射透镜的上部电极。 制造激光器的方法包括以下步骤:在半导体衬底的上表面上依次生长下反射镜,振荡区,上反射镜和接触层; 在所述半导体衬底的下表面上形成下电极; 在接触层上形成在中心部分具有台面形开口的环形掩模; 通过具有台面结构的面罩的开口生长,具有不同厚度的中心和周边部分的反射镜; 以及在除去掩模之后形成环绕反射镜的环形上电极。