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1. 发明授权

US07684454B2 High power vertical cavity surface emitting laser 有权
标题翻译：大功率垂直腔表面发射激光器
公开(公告)号：US07684454B2
公开(公告)日：2010-03-23
申请号：US11448839
申请日：2006-06-08
申请人： Ki-sung Kim
发明人： Ki-sung Kim
IPC分类号： H01S5/00
CPC分类号： H01S5/141 , H01S5/041 , H01S5/183
摘要： An improved VECSEL device is provided in which the gain of each of the quantum well layers can be increased in a periodic gain structure. A vertical external cavity surface emitting laser (VECSEL) device comprising: a substrate; a bottom DBR mirror formed on the substrate; a multiple quantum well layer formed on the bottom DBR mirror and comprising: a plurality of quantum well layers; first and second strain compensation layers sequentially formed above and below each of the quantum well layers to gradually relieve the strain of the quantum well layers; a capping layer formed on the multiple quantum well layer; an optical pump radiating a pump beam to the surface of the capping layer; and an external cavity mirror separated from and facing the bottom DBR mirror.
摘要翻译：提供了一种改进的VECSEL器件，其中可以在周期性增益结构中增加每个量子阱层的增益。一种垂直外腔表面发射激光器（VECSEL）器件，包括：衬底; 形成在基板上的底部DBR镜; 形成在底部DBR反射镜上的多量子阱层，包括：多个量子阱层; 第一和第二应变补偿层，顺序地形成在每个量子阱层之上和之下，以逐渐减轻量子阱层的应变; 形成在所述多量子阱层上的覆盖层; 将泵浦光束辐射到覆盖层的表面的光泵; 以及与底部DBR镜分离并面向底部DBR镜的外部腔镜。

2. 发明授权

US07539229B2 Surface emitting laser device having double channeled structure 有权
标题翻译：具有双沟道结构的表面发射激光器件
公开(公告)号：US07539229B2
公开(公告)日：2009-05-26
申请号：US11193411
申请日：2005-08-01
申请人： Taek Kim , Ki-sung Kim
发明人： Taek Kim , Ki-sung Kim
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , H01S3/109 , H01S5/141 , H01S5/18308 , H01S5/18333 , H01S5/2063 , H01S5/2072 , H01S5/3095
摘要： Embodiments provide a vertical external cavity surface emitting laser (VECSEL) that may provide a uniform current density in an active layer using a double current injecting channel. The surface emitting laser device may include a double channel current injection structure for uniformly applying current to an active layer, wherein the double channel current injection structure may include: a first current injection channel, which may allow current to be injected toward a central portion of an aperture, which may be a light beam output region formed in the active layer, and may have a smaller diameter than the aperture: and a second current injection channel, which may allow current to be injected toward an edge of the aperture and may be located around the aperture.
摘要翻译：实施例提供了可以使用双电流注入通道在有源层中提供均匀电流密度的垂直外腔表面发射激光器（VECSEL）。表面发射激光器件可以包括用于均匀地向有源层施加电流的双通道电流注入结构，其中双通道电流注入结构可以包括：第一电流注入通道，其可以允许电流朝向孔可以是形成在有源层中的光束输出区，并且可以具有比孔小的直径;以及第二电流注入通道，其可以允许电流朝向孔的边缘注入，并且可以是位于光圈周围。

3. 发明授权

US07856043B2 Vertical external cavity surface emitting laser with pump beam reflector 有权
标题翻译：垂直外腔表面发射激光器与泵浦反射器
公开(公告)号：US07856043B2
公开(公告)日：2010-12-21
申请号：US11448774
申请日：2006-06-08
申请人： Ki-sung Kim , Taek Kim
发明人： Ki-sung Kim , Taek Kim
IPC分类号： H01S5/00
CPC分类号： H01S5/183 , H01S3/094084 , H01S3/109 , H01S5/024 , H01S5/041 , H01S5/141
摘要： A vertical external cavity surface emitting laser (VECSEL) using end pumping in which a pumping beam is recycled using a pumping beam reflection layer to increase pumping beam absorption is provided. The VECSEL includes: an active layer for generating and emitting signal light; an external mirror that is separated from and faces a top surface of the active layer and transmits a first portion of the signal light and reflects a second portion of the signal light to the active layer; a first reflection layer contacting a lower surface of the active layer and reflecting the signal light to the external mirror; a pump laser for emitting the pumping beam toward the lower surface of the active layer to excite the active layer; and a second reflection layer contacting the top surface of the active layer and reflecting a portion of the pumping beam back to the active layer.
摘要翻译：提供了使用端泵浦的垂直外腔表面发射激光器（VECSEL），其中泵浦光束使用泵浦光束反射层再循环以增加泵浦光束吸收。 VECSEL包括：用于产生和发射信号光的有源层; 外部反射镜，其与有源层的顶表面分离并且面对有源层的顶表面，并且透射信号光的第一部分并将信号光的第二部分反射到有源层; 接触有源层的下表面并将信号光反射到外部反射镜的第一反射层; 泵浦激光器，用于朝着有源层的下表面发射泵浦光束以激发有源层; 以及与有源层的顶表面接触并将泵浦光束的一部分反射回有源层的第二反射层。

4. 发明授权

US07492802B2 End pumping vertical external cavity surface emitting laser apparatus 有权
标题翻译：垂直外腔表面发射激光装置
公开(公告)号：US07492802B2
公开(公告)日：2009-02-17
申请号：US11508166
申请日：2006-08-23
申请人： Jun-youn Kim , Ki-sung Kim
发明人： Jun-youn Kim , Ki-sung Kim
IPC分类号： H01S5/00 , H01S3/08
CPC分类号： H01S5/041 , H01S5/0213 , H01S5/024 , H01S5/028 , H01S5/14 , H01S5/18305 , H01S5/18383
摘要： Provided is a vertical cavity external surface emitting laser (VECSEL) apparatus in which incidence loss of a pumping beam can be reduced. The VECSEL apparatus includes: a laser chip including: an anti-reflection coating (ARC) layer to which a pumping beam is incident; a low Herpin Index distributed Bragg reflector (LHI-DBR) having a LHI stack structure; and a periodic gain layer that is formed on the LHI-DBR and generates laser light by being excited by the pumping beam; and an external cavity mirror that is installed outside the laser chip and faces the periodic gain layer and constitutes a laser cavity with the LHI-DBR.
摘要翻译：提供了一种垂直腔外表面发射激光器（VECSEL）装置，其中可以减小泵浦光束的入射损失。 VECSEL装置包括：激光芯片，包括：泵送光束入射的防反射涂层（ARC）层; 具有LHI堆叠结构的低Herpin索引分布布拉格反射器（LHI-DBR）; 以及形成在LHI-DBR上的周期性增益层，并且由泵浦光束激发产生激光; 以及安装在激光芯片外部并面向周期性增益层并且与LHI-DBR构成激光腔的外腔镜。

5. 发明授权

US07418024B2 High power vertical external cavity surface emitting laser 有权
标题翻译：大功率垂直外腔表面发射激光
公开(公告)号：US07418024B2
公开(公告)日：2008-08-26
申请号：US11496422
申请日：2006-08-01
申请人： Ki-sung Kim , Taek Kim , Heon-su Jeon
发明人： Ki-sung Kim , Taek Kim , Heon-su Jeon
IPC分类号： H01S3/091
CPC分类号： B82Y20/00 , H01S5/041 , H01S5/14 , H01S5/18383 , H01S5/2009 , H01S5/3406 , H01S5/34313 , H01S5/34346 , H01S5/34353
摘要： Provided is a vertical external cavity surface emitting laser (VECSEL) including: a bottom DBR mirror formed on a substrate; an RPG layer formed on the bottom DBR layer; a capping layer formed on the RPG mirror; an optical pump irradiating a pump beam onto a surface of the capping layer; and an external cavity mirror installed on an external surface of a stacked layer corresponding to the bottom DBR mirror. The RPG layer includes: a plurality of first barrier layers periodically formed on nodes of a standing wave and formed of a material having a larger energy band gap width than that of the pump beam; and a plurality of gain layers including a plurality of QW layers formed of InGaAs and disposed between the first barrier layers, and a plurality of second barrier layers disposed on upper and lower portions of the QW layers.
摘要翻译：提供了一种垂直外腔表面发射激光器（VECSEL），包括：形成在基板上的底部DBR反射镜; 形成在底部DBR层上的RPG层; 形成在RPG镜上的封盖层; 将泵浦光束照射到覆盖层的表面上的光泵; 以及安装在对应于底部DBR反射镜的堆叠层的外表面上的外部空腔镜。 RPG层包括：周期性地形成在驻波的节点上并由具有比泵浦光束的能带宽度大的材料形成的多个第一阻挡层; 以及多个增益层，包括由InGaAs形成的多个QW层，并且设置在第一阻挡层之间，以及多个第二阻挡层，设置在QW层的上部和下部。

6. 发明申请

US20070133640A1 Vertical external cavity surface emitting laser with pump beam reflector 审中-公开
标题翻译：垂直外腔表面发射激光器与泵浦反射器
公开(公告)号：US20070133640A1
公开(公告)日：2007-06-14
申请号：US11541540
申请日：2006-10-03
申请人： Ki-sung Kim
发明人： Ki-sung Kim
IPC分类号： H01S3/10 , H01S5/00
CPC分类号： H01S5/141 , H01S3/109 , H01S5/024 , H01S5/041 , H01S5/183
摘要： Provided is a vertical external cavity surface emitting laser (VECSEL). The VECSEL includes: a semiconductor chip including an active layer emitting a beam having a predetermined wavelength and a reflection layer reflecting the beam generated from the active layer to the outside of the active layer; an external mirror that faces the active layer and repeatedly reflects a beam emitted from the active layer to the reflection layer to amplify the beam and output the amplified beam to the outside; a pump energy supplying a pumping energy to excite the active layer; a second harmonic generation (SHG) device that is disposed between the semiconductor chip and the external mirror and converts the wavelength of the beam emitted from the active layer; and a semiconductor filter or dielectric filter coupled with the SHG device. The VECSEL includes a semiconductor filter or dielectric filter which can easily select a wavelength and can be easily manufactured, and thus can be high light conversion efficiency, is simple, and low manufacturing cost.
摘要翻译：提供了一种垂直外腔表面发射激光器（VECSEL）。 VECSEL包括：包括发射具有预定波长的光束的有源层和将从有源层产生的光束反射到有源层外部的反射层的半导体芯片; 面向有源层的外部反射镜并且将从有源层发射的光束重复地反射到反射层以放大光束并将放大的光束输出到外部; 提供泵送能量以激发有源层的泵浦能量; 二次谐波产生装置，设置在半导体芯片和外部反射镜之间并转换从有源层发射的光束的波长; 以及与SHG器件耦合的半导体滤波器或介质滤波器。 VECSEL包括可以容易地选择波长并且可以容易地制造的半导体滤波器或介质滤波器，因此可以具有高的光转换效率，简单且制造成本低。

7. 发明申请

US20070110118A1 Vertical external cavity surface emitting laser capable of recycling pump beam 审中-公开
标题翻译：垂直外腔表面发射激光器能够回收泵浦光束
公开(公告)号：US20070110118A1
公开(公告)日：2007-05-17
申请号：US11448840
申请日：2006-06-08
申请人： Ki-sung Kim , Taek Kim
发明人： Ki-sung Kim , Taek Kim
IPC分类号： H01S3/091 , H01S3/08 , H01S3/092
CPC分类号： H01S5/18305 , H01S3/094084 , H01S3/109 , H01S5/024 , H01S5/041 , H01S5/141 , H01S5/18361 , H01S5/18383
摘要： A vertical external cavity surface emitting laser (VECSEL) using end pumping in which a pumping beam is recycled to increase pumping beam absorption is provided. The VECSEL comprises: an active layer for generating and emitting signal light with a predetermined wavelength; an external mirror separated from and facing a top surface of the active layer and adapted to transmit a first portion of the signal light generated by the active layer and to reflect a second portion of the signal light to the active layer; a pump laser for emitting a pumping beam to excite the active layer toward the top surface of the active layer; and a double band mirror (DBM) positioned beneath the lower surface of the active layer and adapted to reflect both the signal light generated by the active layer and a portion of the pumping beam which is not absorbed in the active layer.
摘要翻译：提供了使用端泵浦的垂直外腔表面发射激光器（VECSEL），其中泵浦光束被再循环以增加泵浦光束吸收。 VECSEL包括：用于产生和发射具有预定波长的信号光的有源层; 外部镜与所述有源层的顶表面分离并面向所述有源层的顶表面，并适于透射由所述有源层产生的所述信号光的第一部分并将所述信号光的第二部分反射到所述有源层; 用于发射泵浦光束以激发有源层朝向有源层的顶表面的泵浦激光器; 以及位于有源层的下表面下方并适于反射由有源层产生的信号光和不吸收在有源层中的泵浦光束的一部分的双带镜（DBM）。

8. 发明申请

US20070036187A1 High power vertical external cavity surface emitting laser 有权
标题翻译：大功率垂直外腔表面发射激光
公开(公告)号：US20070036187A1
公开(公告)日：2007-02-15
申请号：US11496422
申请日：2006-08-01
申请人： Ki-sung Kim , Taek Kim , Heon-su Jeon
发明人： Ki-sung Kim , Taek Kim , Heon-su Jeon
IPC分类号： H01S5/00 , H01S3/093
CPC分类号： B82Y20/00 , H01S5/041 , H01S5/14 , H01S5/18383 , H01S5/2009 , H01S5/3406 , H01S5/34313 , H01S5/34346 , H01S5/34353
摘要： Provided is a vertical external cavity surface emitting laser (VECSEL) including: a bottom DBR mirror formed on a substrate; an RPG layer formed on the bottom DBR layer; a capping layer formed on the RPG mirror; an optical pump irradiating a pump beam onto a surface of the capping layer; and an external cavity mirror installed on an external surface of a stacked layer corresponding to the bottom DBR mirror. The RPG layer includes: a plurality of first barrier layers periodically formed on nodes of a standing wave and formed of a material having a larger energy band gap width than that of the pump beam; and a plurality of gain layers including a plurality of QW layers formed of InGaAs and disposed between the first barrier layers, and a plurality of second barrier layers disposed on upper and lower portions of the QW layers.
摘要翻译：提供了一种垂直外腔表面发射激光器（VECSEL），包括：形成在基板上的底部DBR反射镜; 形成在底部DBR层上的RPG层; 形成在RPG镜上的封盖层; 将泵浦光束照射到覆盖层的表面上的光泵; 以及安装在对应于底部DBR反射镜的堆叠层的外表面上的外部空腔镜。 RPG层包括：周期性地形成在驻波的节点上并由具有比泵浦光束的能带宽度大的材料形成的多个第一阻挡层; 以及多个增益层，包括由InGaAs形成的多个QW层，并设置在第一阻挡层之间，以及多个第二阻挡层，设置在QW层的上部和下部。

9. 发明授权

US07848165B2 Methods of operating phase-change random access memory devices 有权
标题翻译：操作相变随机存取存储器件的方法
公开(公告)号：US07848165B2
公开(公告)日：2010-12-07
申请号：US12350344
申请日：2009-01-08
申请人： Chang-han Choi , Ho-keun Cho , Byung-gil Choi , Ki-sung Kim , Jong-chul Park , Jong-soo Seo
发明人： Chang-han Choi , Ho-keun Cho , Byung-gil Choi , Ki-sung Kim , Jong-chul Park , Jong-soo Seo
IPC分类号： G11C29/00
CPC分类号： G11C29/24 , G11C13/0004
摘要： A phase-change random access memory (PRAM) device includes a plurality of banks, a plurality of column redundancy cell arrays, and a plurality of column redundancy write drivers. Each of the plurality of column redundancy cell arrays corresponds to at least one of the banks. Each of the plurality of column redundancy write drivers corresponds to at least one of the column redundancy cell arrays. The column redundancy write drivers are configured to transmit respective redundancy test data to the corresponding ones of the column redundancy cell arrays in response to a test control signal, which may be activated in response to each program pulse for writing data. Related test and access methods are also discussed.
摘要翻译：相变随机存取存储器（PRAM）装置包括多个存储体，多个列冗余单元阵列和多个列冗余写入驱动器。多个列冗余单元阵列中的每一个对应于至少一个存储体。多个列冗余写入驱动器中的每一个对应于列冗余单元阵列中的至少一个。列冗余写入驱动器被配置为响应于可以响应于用于写入数据的每个编程脉冲激活的测试控制信号将相应的冗余测试数据发送到列冗余单元阵列中的对应的冗余测试数据。还讨论了相关的测试和访问方法。

10. 发明授权

US07639522B2 Method of driving multi-level variable resistive memory device and multi-level variable resistive memory device 有权
标题翻译：驱动多级可变电阻式存储器件和多级可变电阻式存储器件的方法
公开(公告)号：US07639522B2
公开(公告)日：2009-12-29
申请号：US11855525
申请日：2007-09-14
申请人： Woo-yeong Cho , Du-eung Kim , Ki-sung Kim
发明人： Woo-yeong Cho , Du-eung Kim , Ki-sung Kim
IPC分类号： G11C11/00
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/0064 , G11C13/0069 , G11C2013/0078
摘要： Disclosed is a method of driving a multi-level variable resistive memory device. A method of driving a multi-level variable resistive memory device includes supplying a write current to a variable resistive memory cell so as to change resistance of the variable resistive memory cell, verifying whether or not changed resistance enters a predetermined resistance window, and supplying a write current having an increased or decreased amount from the write current supplied most recently on the basis of the verification result so as to change resistance of the variable resistive memory cell.
摘要翻译：公开了一种驱动多电平可变电阻存储器件的方法。一种驱动多电平可变电阻存储器件的方法包括向可变电阻存储单元提供写入电流，以便改变可变电阻存储单元的电阻，验证改变电阻是否进入预定电阻窗，基于验证结果从最近提供的写入电流中增加或减少量的写入电流，以便改变可变电阻存储单元的电阻。

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