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1. 发明专利

GB0211782D0 Electrical plug with integrated socket 未知
公开(公告)号：GB0211782D0
公开(公告)日：2002-07-03
申请号：GB0211782
申请日：2002-05-22
申请人： KHENG LIM S

2. 发明专利

SG125899A1 Electrical plug with integrated socket 未知
公开(公告)号：SG125899A1
公开(公告)日：2006-10-30
申请号：SG200202791
申请日：2002-05-15
申请人： KHENG LIM SEONG
发明人： KHENG LIM SEONG
IPC分类号： H01R13/00 , H01R31/02
摘要： A wired electrical plug (30) that is adapted to have an integrated socket (25) for use as an additional power supply source when the said plug (30) is connected to a power outlet.

3. 发明申请

US20130256834A1 BACK-SIDE MOM/MIM DEVICES 有权
标题翻译：背面MOM / MIM设备
公开(公告)号：US20130256834A1
公开(公告)日：2013-10-03
申请号：US13430778
申请日：2012-03-27
申请人： Juan Boon TAN , Yeow Kheng Lim , Shao Ning Yuan , Soh Yun Siah , Shunqiang Gong
发明人： Juan Boon TAN , Yeow Kheng Lim , Shao Ning Yuan , Soh Yun Siah , Shunqiang Gong
IPC分类号： H01L29/02 , H01L21/02
CPC分类号： H01L23/5223 , H01L23/481 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： Back-side MOM/MIM structures are integrated on a device with front-side circuitry. Embodiments include forming a substrate having a front side and a back side that is opposite the front side, the substrate including circuitry on the front side of the substrate; and forming a metal-oxide-metal (MOM) capacitor, a metal-insulator-metal (MIM) capacitor, or a combination thereof on the back side of the substrate. Other embodiments include forming a through-silicon via (TSV), in the substrate, connecting the MOM capacitor, the MIM capacitor, or a combination thereof to the circuitry on the front side of the substrate.
摘要翻译：背面MOM / MIM结构集成在具有前端电路的设备上。实施例包括形成具有与前侧相对的前侧和后侧的基板，所述基板在基板的正面上包括电路; 以及在衬底的背面上形成金属 - 氧化物 - 金属（MOM）电容器，金属 - 绝缘体 - 金属（MIM）电容器或其组合。其他实施例包括在衬底中形成穿硅通孔（TSV），将MOM电容器，MIM电容器或其组合连接到衬底前侧上的电路。

4. 发明授权

US08349527B2 Conductive layer including implanted metal ions 有权
标题翻译：导电层包括植入金属离子
公开(公告)号：US08349527B2
公开(公告)日：2013-01-08
申请号：US13113534
申请日：2011-05-23
申请人： Hae-sung Kim , Hyoung-soo Ko , Seung-bum Hong , Jin-seung Sohn , Sung-hoon Choa , Chee-kheng Lim
发明人： Hae-sung Kim , Hyoung-soo Ko , Seung-bum Hong , Jin-seung Sohn , Sung-hoon Choa , Chee-kheng Lim
IPC分类号： G03F1/00
CPC分类号： G03F1/14 , B29C59/002 , B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10T428/24917
摘要： A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.
摘要翻译：提供了纳米压印母版及其制造方法。该方法包括：将导电金属离子注入包括石英的衬底中，以在石英衬底内形成导电层; 在其上形成导电层的石英基板上涂覆抗蚀剂，以形成抗蚀剂涂层; 将抗蚀剂涂层暴露于电子束以形成微图案; 通过使用其中形成有微图案的抗蚀剂涂层作为掩模来蚀刻石英基板; 并除去抗蚀剂涂层以获得形成微图案的母版。

5. 发明授权

US07672081B2 Perpendicular magnetic recording head 失效
标题翻译：垂直磁记录头
公开(公告)号：US07672081B2
公开(公告)日：2010-03-02
申请号：US11503296
申请日：2006-08-14
申请人： Chee-kheng Lim , Eun-sik Kim , Yong-su Kim
发明人： Chee-kheng Lim , Eun-sik Kim , Yong-su Kim
IPC分类号： G11B5/127
CPC分类号： G11B5/012 , G11B5/1278 , G11B5/3116 , G11B5/3146 , G11B2005/0029
摘要： A perpendicular magnetic recording head which moves in a track direction of a recording layer of a perpendicular magnetic recording medium to write information on the recording layer or read information from the recording layer. The perpendicular magnetic recording head includes: the perpendicular magnetic recording medium including a soft magnetic underlayer and the recording layer; a write head including a main pole that applies a magnetic field to, and writes information to, the recording layer and a return pole having a first end which is connected to the main pole and having a second end which is spaced apart from the main pole over an air bearing surface (ABS) of the perpendicular magnetic recording head which is adjacent to the recording layer; and a permanent magnet formed on at least one side of the write head.
摘要翻译：垂直磁记录头，其在垂直磁记录介质的记录层的轨道方向上移动以在记录层上写入信息或从记录层读取信息。垂直磁记录头包括：包括软磁性底层和记录层的垂直磁记录介质; 写头，其包括向记录层施加磁场并向其写入信息的主极;以及返回极，其具有连接到主极的第一端，并且具有与主极间隔开的第二端在与记录层相邻的垂直磁记录头的空气轴承表面（ABS）上; 以及形成在所述写入头的至少一侧上的永磁体。

6. 发明授权

US07652906B2 Memory device employing magnetic domain wall movement 有权
标题翻译：采用磁畴壁运动的记忆装置
公开(公告)号：US07652906B2
公开(公告)日：2010-01-26
申请号：US11851049
申请日：2007-09-06
申请人： Chee-kheng Lim , Eun-sik Kim , Sung-chul Lee
发明人： Chee-kheng Lim , Eun-sik Kim , Sung-chul Lee
IPC分类号： G11C19/00
CPC分类号： G11C11/14 , G11C19/0808 , G11C19/0816 , G11C19/0841 , Y10S977/933
摘要： Provided is a memory device employing magnetic domain wall movement. The memory device includes a first track, an interconnecting layer, and a second track. The first track including a magnetic material is formed in a first direction. The interconnecting layer is formed on the first track. The second track including a magnetic material is formed in a second direction on the interconnecting layer.
摘要翻译：提供了采用磁畴壁运动的存储器件。存储器件包括第一轨道，互连层和第二轨道。包括磁性材料的第一轨迹形成在第一方向上。互连层形成在第一轨道上。包括磁性材料的第二轨道在互连层上沿第二方向形成。

7. 发明申请

US20080144217A1 PATTERNED MAGNETIC RECORDING MEDIUM AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：图形磁记录介质及其制造方法
公开(公告)号：US20080144217A1
公开(公告)日：2008-06-19
申请号：US11861348
申请日：2007-09-26
申请人： Myung-bok LEE , Jin-seung Sohn , Chee-kheng Lim
发明人： Myung-bok LEE , Jin-seung Sohn , Chee-kheng Lim
IPC分类号： G11B5/74 , G11B23/00
CPC分类号： G11B5/82 , B82Y10/00 , G11B5/656 , G11B5/66 , G11B5/743 , G11B5/855 , G11B5/858
摘要： Provided are a patterned magnetic recording medium and a method of manufacturing the same. The patterned magnetic recording medium include: a substrate; and a plurality of magnetic recording layers arranged at predetermined intervals, wherein the magnetic recording layers are formed of an alloy including Co, Pt, and Ni. The patterned medium having the magnetic recording layers have an excellent read/write characteristic and high corrosion resistance and recording density.
摘要翻译：提供图案化的磁记录介质及其制造方法。图案化的磁记录介质包括：基底; 以及以预定间隔布置的多个磁记录层，其中磁记录层由包括Co，Pt和Ni的合金形成。具有磁记录层的图案化介质具有优异的读/写特性和高耐蚀性和记录密度。

8. 发明申请

US20070206405A1 Multi-bit magnetic memory device using spin-polarized current and methods of manufacturing and operating the same 有权
标题翻译：使用自旋极化电流的多位磁存储器件及其制造和操作方法
公开(公告)号：US20070206405A1
公开(公告)日：2007-09-06
申请号：US11347228
申请日：2006-02-06
申请人： Chee-kheng Lim , Yong-su Kim
发明人： Chee-kheng Lim , Yong-su Kim
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B82Y10/00 , G11C11/16 , G11C11/5607 , H01L27/228
摘要： A multi-bit magnetic memory device using a spin-polarized current and methods of manufacturing and operating the same. The magnetic memory device includes a switching device and a magnetic storage node connected to the switching device, wherein the magnetic storage node includes a first magnetic layer, a second magnetic layer and a free magnetic layer which are vertically and separately disposed from one another. The first and second magnetic layer have transmission characteristics opposite to each other for spin-polarized electrons, and have magnetic polarizations that are opposite to each other. The free magnetic layer may include first and second free magnetic layers, which are separately disposed from each other. The magnetic storage node may further include third and fourth magnetic layers that are separately disposed between the first and second free magnetic layers.
摘要翻译：使用自旋极化电流的多位磁存储器件及其制造和操作方法。磁存储器件包括连接到开关器件的开关器件和磁存储节点，其中磁存储节点包括彼此垂直且分开设置的第一磁性层，第二磁性层和自由磁性层。第一和第二磁性层对于自旋极化电子具有彼此相反的传输特性，并且具有彼此相反的磁极化。自由磁性层可以包括彼此分开设置的第一和第二自由磁性层。磁存储节点还可以包括分开设置在第一和第二自由磁性层之间的第三和第四磁性层。

9. 发明授权

US06558994B2 Dual silicon-on-insulator device wafer die 失效
公开(公告)号：US06558994B2
公开(公告)日：2003-05-06
申请号：US09841564
申请日：2001-03-01
申请人： Randall Cher Liang Cha , Yeow Kheng Lim , Alex See , Tae Jong Lee , Wang Ling Goh
发明人： Randall Cher Liang Cha , Yeow Kheng Lim , Alex See , Tae Jong Lee , Wang Ling Goh
IPC分类号： H01L2100
CPC分类号： H01L21/76264 , H01L21/76278 , H01L21/76281 , H01L21/76283 , H01L2924/0002 , Y10S438/967 , H01L2924/00
摘要： A silicon-on-insulator semiconductor device and manufacturing method therefor is provided in which a single wafer die contains a transistor over an insulator layer to form a fully depleted silicon-on-insulator device and a transistor formed in a semiconductor island over an insulator structure on the semiconductor wafer forms a partially depleted silicon-on-insulator device.

10. 发明授权

US06319767B1 Method to eliminate top metal corner shaping during bottom metal patterning for MIM capacitors via plasma ashing and hard masking technique 有权
标题翻译：用于通过等离子体灰化和硬掩蔽技术消除MIM电容器底金属图案化期间的顶部金属角成形的方法
公开(公告)号：US06319767B1
公开(公告)日：2001-11-20
申请号：US09798639
申请日：2001-03-05
申请人： Randall Cher Liang Cha , Tae Jong Lee , Alex See , Lap Chan , Yeow Kheng Lim
发明人： Randall Cher Liang Cha , Tae Jong Lee , Alex See , Lap Chan , Yeow Kheng Lim
IPC分类号： H01L218242
CPC分类号： H01L28/60 , H01L21/31122 , H01L21/31144 , H01L21/32136 , H01L21/32139
摘要： A method for fabricating a metal-insulator-metal capacitor wherein top metal corner shaping during patterning is eliminated is described. An insulating layer is provided overlying a semiconductor substrate. A composite metal stack is formed comprising a first metal layer overlying the insulating layer, a capacitor dielectric layer overlying the first metal layer, a second metal layer overlying the capacitor dielectric layer, and a hard mask layer overlying the second metal layer. A first photoresist mask is formed overlying the hard mask layer. The composite metal stack is patterned using the first photoresist mask as an etching mask whereby the patterned first metal layer forms a bottom electrode of the capacitor. A portion of the first photoresist mask is removed by plasma ashing to form a second photoresist mask narrower than the first photoresist mask. The hard mask layer is patterned using the second photoresist mask as an etching mask. The second metal layer is patterned using the hard mask layer as an etching mask whereby the second metal layer forms a top electrode of the capacitor to complete fabrication of a metal-insulator-metal capacitor.
摘要翻译：描述了一种用于制造金属 - 绝缘体 - 金属电容器的方法，其中消除了图案化期间的顶部金属角成形。绝缘层设置在半导体衬底上。形成复合金属堆叠，其包括覆盖绝缘层的第一金属层，覆盖第一金属层的电容器电介质层，覆盖电容器电介质层的第二金属层和覆盖第二金属层的硬掩模层。第一光致抗蚀剂掩模形成在硬掩模层上。使用第一光致抗蚀剂掩模将复合金属堆叠图案化为蚀刻掩模，由此图案化的第一金属层形成电容器的底部电极。通过等离子体灰化除去第一光致抗蚀剂掩模的一部分，以形成比第一光致抗蚀剂掩模窄的第二光刻胶掩模。使用第二光致抗蚀剂掩模将硬掩模层图案化为蚀刻掩模。使用硬掩模层作为蚀刻掩模对第二金属层进行构图，由此第二金属层形成电容器的顶部电极，以完成金属 - 绝缘体 - 金属电容器的制造。

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