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1. 发明授权

US08702866B2 Showerhead electrode assembly with gas flow modification for extended electrode life 有权
标题翻译：喷头电极组件，具有气流改性，延长电极寿命
公开(公告)号：US08702866B2
公开(公告)日：2014-04-22
申请号：US11640193
申请日：2006-12-18
申请人： Jason Augustino , Anthony De La Llera , Allan K. Ronne , Jaehyun Kim , Rajinder Dhindsa , Yen-Kun Wang , Saurabh J. Ullal , Anthony J. Norell , Keith Comendant , William M. Denty, Jr.
发明人： Jason Augustino , Anthony De La Llera , Allan K. Ronne , Jaehyun Kim , Rajinder Dhindsa , Yen-Kun Wang , Saurabh J. Ullal , Anthony J. Norell , Keith Comendant , William M. Denty, Jr.
IPC分类号： C23C16/455 , C23C16/50 , H01L21/3065
CPC分类号： H01L21/67069 , C23C16/45565 , C23C16/45582 , H01J37/3244 , H01J37/32449 , H01J37/32541 , H01L21/67017
摘要： A showerhead electrode assembly for a plasma processing apparatus is provided. The showerhead electrode assembly includes a first member attached to a second member. The first and second members have first and second gas passages in fluid communication. When a process gas is flowed through the gas passages, a total pressure drop is generated across the first and second gas passages. A fraction of the total pressure drop across the second gas passages is greater than a fraction of the total pressure drop across the first gas passages.
摘要翻译：提供了一种用于等离子体处理装置的喷头电极组件。喷头电极组件包括附接到第二构件的第一构件。第一和第二构件具有流体连通的第一和第二气体通道。当处理气体流过气体通道时，跨越第一和第二气体通道产生总压降。跨越第二气体通道的总压降的一小部分大于跨越第一气体通道的总压降的一部分。

2. 发明授权

US07854820B2 Upper electrode backing member with particle reducing features 有权
标题翻译：具有减少粒子特性的上部电极背衬部件
公开(公告)号：US07854820B2
公开(公告)日：2010-12-21
申请号：US11639264
申请日：2006-12-15
申请人： Anthony De La Llera , Allan K. Ronne , Jaehyun Kim , Jason Augustino , Rajinder Dhindsa , Yen-Kun Wang , Saurabh J. Ullal , Anthony J. Norell , Keith Comendant , William M. Denty, Jr.
发明人： Anthony De La Llera , Allan K. Ronne , Jaehyun Kim , Jason Augustino , Rajinder Dhindsa , Yen-Kun Wang , Saurabh J. Ullal , Anthony J. Norell , Keith Comendant , William M. Denty, Jr.
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/32449 , H01J37/32009 , H01J37/32541 , H01J37/3255
摘要： Components of a plasma processing apparatus includes a backing member with gas passages attached to an upper electrode with gas passages. To compensate for the differences in coefficient of thermal expansion between the metallic backing member and upper electrode, the gas passages are positioned and sized such that they are misaligned at ambient temperature and substantially concentric at an elevated processing temperature. Non-uniform shear stresses can be generated in the elastomeric bonding material, due to the thermal expansion. Shear stresses can either be accommodated by applying an elastomeric bonding material of varying thickness or using a backing member comprising of multiple pieces.
摘要翻译：等离子体处理装置的组件包括具有气体通道的背衬构件，气体通道连接到具有气体通道的上部电极。为了补偿金属背衬构件和上部电极之间的热膨胀系数的差异，气体通道的定位和尺寸使得它们在环境温度下不对准并且在升高的处理温度下基本上同心。由于热膨胀，弹性粘合材料中可能会产生不均匀的剪切应力。剪切应力可以通过施加不同厚度的弹性粘合材料或使用包括多个片的背衬构件来适应。

3. 发明申请

US20110086513A1 UPPER ELECTRODE BACKING MEMBER WITH PARTICLE REDUCING FEATURES 有权
标题翻译：具有颗粒减少特性的上电极背部构件
公开(公告)号：US20110086513A1
公开(公告)日：2011-04-14
申请号：US12967750
申请日：2010-12-14
申请人： Anthony De La Llera , Allan K. Ronne , Jaehyun Kim , Jason Augustino , Rajinder Dhindsa , Yen-Kun Wang , Saurabh J. Ullal , Anthony J. Norell , Keith Comendant , William M. Denty, JR.
发明人： Anthony De La Llera , Allan K. Ronne , Jaehyun Kim , Jason Augustino , Rajinder Dhindsa , Yen-Kun Wang , Saurabh J. Ullal , Anthony J. Norell , Keith Comendant , William M. Denty, JR.
IPC分类号： H01L21/04 , C23C16/455
CPC分类号： H01J37/32449 , H01J37/32009 , H01J37/32541 , H01J37/3255
摘要： Components of a plasma processing apparatus includes a backing member with gas passages attached to an upper electrode with gas passages. To compensate for the differences in coefficient of thermal expansion between the metallic backing member and upper electrode, the gas passages are positioned and sized such that they are misaligned at ambient temperature and substantially concentric at an elevated processing temperature. Non-uniform shear stresses can be generated in the elastomeric bonding material, due to the thermal expansion. Shear stresses can either be accommodated by applying an elastomeric bonding material of varying thickness or using a backing member comprising of multiple pieces.
摘要翻译：等离子体处理装置的组件包括具有气体通道的背衬构件，气体通道连接到具有气体通道的上部电极。为了补偿金属背衬构件和上部电极之间的热膨胀系数的差异，气体通道的定位和尺寸使得它们在环境温度下不对准并且在升高的处理温度下基本上同心。由于热膨胀，弹性粘合材料中可能会产生不均匀的剪切应力。剪切应力可以通过施加不同厚度的弹性粘合材料或使用包括多个片的背衬构件来适应。

4. 发明授权

US08709202B2 Upper electrode backing member with particle reducing features 有权
标题翻译：具有减少粒子特性的上部电极背衬部件
公开(公告)号：US08709202B2
公开(公告)日：2014-04-29
申请号：US12967750
申请日：2010-12-14
申请人： Anthony De La Llera , Allan K. Ronne , Jaehyun Kim , Jason Augustino , Rajinder Dhindsa , Yen-Kun Wang , Saurabh J. Ullal , Anthony J. Norell , Keith Comendant , William M. Denty, Jr.
发明人： Anthony De La Llera , Allan K. Ronne , Jaehyun Kim , Jason Augustino , Rajinder Dhindsa , Yen-Kun Wang , Saurabh J. Ullal , Anthony J. Norell , Keith Comendant , William M. Denty, Jr.
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/32449 , H01J37/32009 , H01J37/32541 , H01J37/3255
摘要： Components of a plasma processing apparatus includes a backing member with gas passages attached to an upper electrode with gas passages. To compensate for the differences in coefficient of thermal expansion between the metallic backing member and upper electrode, the gas passages are positioned and sized such that they are misaligned at ambient temperature and substantially concentric at an elevated processing temperature. Non-uniform shear stresses can be generated in the elastomeric bonding material, due to the thermal expansion. Shear stresses can either be accommodated by applying an elastomeric bonding material of varying thickness or using a backing member comprising of multiple pieces.
摘要翻译：等离子体处理装置的组件包括具有气体通道的背衬构件，气体通道连接到具有气体通道的上部电极。为了补偿金属背衬构件和上部电极之间的热膨胀系数的差异，气体通道的定位和尺寸使得它们在环境温度下不对准并且在升高的处理温度下基本上同心。由于热膨胀，弹性粘合材料中可能会产生不均匀的剪切应力。剪切应力可以通过施加不同厚度的弹性粘合材料或使用包括多个片的背衬构件来适应。

5. 发明申请

US20080141941A1 Showerhead electrode assembly with gas flow modification for extended electrode life 有权
标题翻译：喷头电极组件，具有气流改性，延长电极寿命
公开(公告)号：US20080141941A1
公开(公告)日：2008-06-19
申请号：US11640193
申请日：2006-12-18
申请人： Jason Augustino , Anthony De La Llera , Allan K. Ronne , Jaehyun Kim , Rajinder Dhindsa , Yen-Kun Wang , Saurabh J. Ullal , Anthony J. Norell , Keith Comendant , William M. Denty
发明人： Jason Augustino , Anthony De La Llera , Allan K. Ronne , Jaehyun Kim , Rajinder Dhindsa , Yen-Kun Wang , Saurabh J. Ullal , Anthony J. Norell , Keith Comendant , William M. Denty
IPC分类号： C23C16/00 , H01L21/31
CPC分类号： H01L21/67069 , C23C16/45565 , C23C16/45582 , H01J37/3244 , H01J37/32449 , H01J37/32541 , H01L21/67017
摘要： A showerhead electrode assembly for a plasma processing apparatus is provided. The showerhead electrode assembly includes a first member attached to a second member. The first and second members have first and second gas passages in fluid communication. When a process gas is flowed through the gas passages, a total pressure drop is generated across the first and second gas passages. A fraction of the total pressure drop across the second gas passages is greater than a fraction of the total pressure drop across the first gas passages.
摘要翻译：提供了一种用于等离子体处理装置的喷头电极组件。喷头电极组件包括附接到第二构件的第一构件。第一和第二构件具有流体连通的第一和第二气体通道。当处理气体流过气体通道时，跨越第一和第二气体通道产生总压降。跨越第二气体通道的总压降的一小部分大于跨越第一气体通道的总压降的一部分。

6. 发明申请

US20080090417A1 Upper electrode backing member with particle reducing features 有权
标题翻译：具有减少粒子特性的上部电极背衬部件
公开(公告)号：US20080090417A1
公开(公告)日：2008-04-17
申请号：US11639264
申请日：2006-12-15
申请人： Anthony De La Llera , Allan K. Ronne , Jaehyun Kim , Jason Augustino , Rajinder Dhindsa , Yen-Kun Wang , Saurabh J. Ullal , Anthony J. Norell , Keith Comendant , William M. Denty
发明人： Anthony De La Llera , Allan K. Ronne , Jaehyun Kim , Jason Augustino , Rajinder Dhindsa , Yen-Kun Wang , Saurabh J. Ullal , Anthony J. Norell , Keith Comendant , William M. Denty
IPC分类号： H05H1/24 , C23F1/00 , H01L21/302
CPC分类号： H01J37/32449 , H01J37/32009 , H01J37/32541 , H01J37/3255
摘要： Components of a plasma processing apparatus includes a backing member with gas passages attached to an upper electrode with gas passages. To compensate for the differences in coefficient of thermal expansion between the metallic backing member and upper electrode, the gas passages are positioned and sized such that they are misaligned at ambient temperature and substantially concentric at an elevated processing temperature. Non-uniform shear stresses can be generated in the elastomeric bonding material, due to the thermal expansion. Shear stresses can either be accommodated by applying an elastomeric bonding material of varying thickness or using a backing member comprising of multiple pieces.
摘要翻译：等离子体处理装置的组件包括具有气体通道的背衬构件，气体通道连接到具有气体通道的上部电极。为了补偿金属背衬构件和上部电极之间的热膨胀系数的差异，气体通道的定位和尺寸使得它们在环境温度下不对准并且在升高的处理温度下基本上同心。由于热膨胀，弹性粘合材料中可能会产生不均匀的剪切应力。剪切应力可以通过施加不同厚度的弹性粘合材料或使用包括多个片的背衬构件来适应。

7. 发明申请

US20120073754A1 PLASMA CONFINEMENT RING ASSEMBLY FOR PLASMA PROCESSING CHAMBERS 有权
标题翻译：用于等离子体加工釜的等离子体配料环组件
公开(公告)号：US20120073754A1
公开(公告)日：2012-03-29
申请号：US13021499
申请日：2011-02-04
申请人： Anthony de la Llera , David Carman , Travis R. Taylor , Saurabh J. Ullal , Harmeet Singh
发明人： Anthony de la Llera , David Carman , Travis R. Taylor , Saurabh J. Ullal , Harmeet Singh
IPC分类号： H01L21/00
CPC分类号： H01L21/67069
摘要： A plasma confinement ring assembly with a single movable lower ring can be used for controlling wafer area pressure in a capacitively coupled plasma reaction chamber wherein a wafer is supported on a lower electrode assembly and process gas is introduced into the chamber by an upper showerhead electrode assembly. The assembly includes an upper ring, the lower ring, hangers, hanger caps, spacer sleeves and washers. The lower ring is supported by the hangers and is movable towards the upper ring when the washers come into contact with the lower electrode assembly during adjustment of the gap between the upper and lower electrodes. The hanger caps engage upper ends of the hangers and fit in upper portions of hanger bores in the upper ring. The spacer sleeves surround lower sections of the hangers and fit within lower portions of the hanger bores. The washers fit between enlarged heads of the hangers and a lower surface of the lower ring. The spacer sleeves are dimensioned to avoid rubbing against the inner surfaces of the hanger bores during lifting of the lower ring.
摘要翻译：可以使用具有单个可移动下环的等离子体约束环组件来控制电容耦合等离子体反应室中的晶片面积压力，其中晶片被支撑在下部电极组件上，并且处理气体通过上部喷头电极组件。组件包括上环，下环，吊架，衣架盖，间隔套和垫圈。下环由吊架支撑，并且当在上下电极之间的间隙调节期间垫圈与下电极组件接触时，可以朝向上环移动。衣架帽接合衣架的上端，并安装在上环的衣架孔的上部。间隔套环绕悬挂器的下部并且安装在衣架孔的下部。垫圈安装在衣架的扩大头部和下环的下表面之间。间隔套的尺寸被设计成避免在提升下环期间摩擦挂钩孔的内表面。

8. 发明授权

US09076826B2 Plasma confinement ring assembly for plasma processing chambers 有权
标题翻译：等离子体处理室的等离子体约束环组件
公开(公告)号：US09076826B2
公开(公告)日：2015-07-07
申请号：US13021499
申请日：2011-02-04
申请人： Anthony de la Llera , David Carman , Travis R. Taylor , Saurabh J. Ullal , Harmeet Singh
发明人： Anthony de la Llera , David Carman , Travis R. Taylor , Saurabh J. Ullal , Harmeet Singh
IPC分类号： C23F1/00 , H01L21/67
CPC分类号： H01L21/67069
摘要： A plasma confinement ring assembly with a single movable lower ring can be used for controlling wafer area pressure in a capacitively coupled plasma reaction chamber wherein a wafer is supported on a lower electrode assembly and process gas is introduced into the chamber by an upper showerhead electrode assembly. The assembly includes an upper ring, the lower ring, hangers, hanger caps, spacer sleeves and washers. The lower ring is supported by the hangers and is movable towards the upper ring when the washers come into contact with the lower electrode assembly during adjustment of the gap between the upper and lower electrodes. The hanger caps engage upper ends of the hangers and fit in upper portions of hanger bores in the upper ring. The spacer sleeves surround lower sections of the hangers and fit within lower portions of the hanger bores. The washers fit between enlarged heads of the hangers and a lower surface of the lower ring. The spacer sleeves are dimensioned to avoid rubbing against the inner surfaces of the hanger bores during lifting of the lower ring.
摘要翻译：可以使用具有单个可移动下环的等离子体约束环组件来控制电容耦合等离子体反应室中的晶片面积压力，其中晶片被支撑在下部电极组件上，并且处理气体通过上部喷头电极组件。组件包括上环，下环，吊架，衣架盖，间隔套和垫圈。下环由吊架支撑，并且当在上下电极之间的间隙调节期间垫圈与下电极组件接触时，可以朝向上环移动。衣架帽接合衣架的上端，并安装在上环的衣架孔的上部。间隔套环绕悬挂器的下部并且安装在衣架孔的下部。垫圈安装在衣架的扩大头部和下环的下表面之间。间隔套的尺寸被设计成避免在提升下环期间摩擦挂钩孔的内表面。

9. 发明授权

US07767584B1 In-situ pre-coating of plasma etch chamber for improved productivity and chamber condition control 有权
标题翻译：等离子体蚀刻室的原位预涂，以提高生产率和室状态控制
公开(公告)号：US07767584B1
公开(公告)日：2010-08-03
申请号：US11684084
申请日：2007-03-09
申请人： Harmeet Singh , Saurabh J. Ullal , Shibu Gangadharan
发明人： Harmeet Singh , Saurabh J. Ullal , Shibu Gangadharan
IPC分类号： H01L21/302
CPC分类号： H01J37/32862 , C23C16/4404 , C23C16/4405 , H01J37/321 , Y10S134/902 , Y10S438/905
摘要： A method for providing substantially similar chamber condition before each wafer process operation in a semiconductor process chamber is provided. The method allows for prevention of transport of particle and metal contamination from chamber surfaces to the processed wafer. The method initiates with depositing a silicon containing layer over an inner surface of an empty semiconductor process chamber. Then, a wafer is introduced into the semiconductor process chamber after depositing the silicon containing layer. Next, a process operation is performed on the wafer. The process operation deposits a residue on the silicon containing layer. Next, an in-situ cleaning process is initiated upon completion of the processing operation and removal of the wafer. The process initiation includes flowing a fluorine containing gas into the semiconductor process chamber, and establishing a pressure within the semiconductor process chamber capable of allowing a plasma created from the fluorine containing gas to clear the silicon containing layer covering the inner surface of the processing chamber. A semiconductor processing chamber having a silicon containing pre-coat is also provided.
摘要翻译：提供了一种用于在半导体处理室中的每个晶片处理操作之前提供基本相似的室状态的方法。该方法允许防止颗粒和金属污染物从室表面运输到处理过的晶片。该方法通过在空的半导体处理室的内表面上沉积含硅层开始。然后，在沉积含硅层之后将晶片引入半导体处理室。接下来，对晶片进行处理操作。处理操作在含硅层上沉积残留物。接下来，在完成晶片的处理操作和移除之后开始原位清洁处理。工艺开始包括使含氟气体流入半导体处理室，并且在半导体处理室内建立能够允许由含氟气体产生的等离子体的压力，以清除覆盖处理室内表面的含硅层。还提供了具有含硅预涂层的半导体处理室。

10. 发明授权

US07482550B2 Quartz guard ring 有权
标题翻译：石英护环
公开(公告)号：US07482550B2
公开(公告)日：2009-01-27
申请号：US11701430
申请日：2007-02-02
申请人： Dean J. Larson , Daniel Brown , Saurabh J. Ullal
发明人： Dean J. Larson , Daniel Brown , Saurabh J. Ullal
IPC分类号： B23K10/00
CPC分类号： H01J37/3255 , H01J37/32009 , H01J37/32568
摘要： An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper electrode, a backing member attachable to an upper surface of the upper electrode, and an outer ring. The outer ring surrounds an outer surface of the backing member and is located above the upper surface of the upper electrode.
摘要翻译：用于等离子体反应室的电极组件，用于半导体衬底处理。组件包括上电极，可附接到上电极的上表面的背衬构件和外环。外环围绕背衬构件的外表面并且位于上电极的上表面上方。

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