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1. 发明申请

US20130062739A1 STRUCTURAL BODY AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE 有权
标题翻译：结构体和制造半导体衬底的方法
公开(公告)号：US20130062739A1
公开(公告)日：2013-03-14
申请号：US13577117
申请日：2011-02-08
申请人： Takafumi Yao , Hyun-Jae Lee , Katsushi Fujii
发明人： Takafumi Yao , Hyun-Jae Lee , Katsushi Fujii
IPC分类号： H01L21/20 , H01L29/04
CPC分类号： C30B29/403 , C30B25/18 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L21/02658
摘要： A structural body includes a sapphire underlying substrate; and a semiconductor layer of a group III nitride semiconductor disposed on the underlying substrate. An upper surface of the underlying substrate is a crystal surface tilted at an angle of 0.5° or larger and 4° or smaller with respect to a normal line of an a-plane which is orthogonal to an m-plane and belongs to a {11-20} plane group, from the m-plane which belongs to a {1-100} plane group.
摘要翻译：结构体包括蓝宝石下面的基底; 以及设置在下层基板上的III族氮化物半导体的半导体层。下面的基板的上表面是相对于与m面正交的a面的法线以0.5°以上且4°以下的角度倾斜的晶体面，属于{11 -20}平面组，从属于{1-100}平面组的m平面。

2. 发明授权

US08878345B2 Structural body and method for manufacturing semiconductor substrate 有权
标题翻译：半导体衬底的结构体和方法
公开(公告)号：US08878345B2
公开(公告)日：2014-11-04
申请号：US13577117
申请日：2011-02-08
申请人： Takafumi Yao , Hyun-Jae Lee , Katsushi Fujii
发明人： Takafumi Yao , Hyun-Jae Lee , Katsushi Fujii
IPC分类号： H01L21/20 , H01L29/04 , H01L21/02 , C30B29/40 , C30B25/18
CPC分类号： C30B29/403 , C30B25/18 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L21/02658
摘要： A structural body includes a sapphire underlying substrate; and a semiconductor layer of a group III nitride semiconductor disposed on the underlying substrate. An upper surface of the underlying substrate is a crystal surface tilted at an angle of 0.5° or larger and 4° or smaller with respect to a normal line of an a-plane which is orthogonal to an m-plane and belongs to a {11-20} plane group, from the m-plane which belongs to a {1-100} plane group.
摘要翻译：结构体包括蓝宝石下面的基底; 以及设置在下层基板上的III族氮化物半导体的半导体层。下面的基板的上表面是相对于与m面正交的a面的法线以0.5°以上且4°以下的角度倾斜的晶体面，属于{11 -20}平面组，从属于{1-100}平面组的m平面。

3. 发明授权

US07906409B2 Device manufacturing method 有权
标题翻译：器件制造方法
公开(公告)号：US07906409B2
公开(公告)日：2011-03-15
申请号：US12405696
申请日：2009-03-17
申请人： Takafumi Yao , Meoung-Whan Cho
发明人： Takafumi Yao , Meoung-Whan Cho
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/0079 , H01L33/12 , H01L33/20
摘要： A device manufacturing method includes a buffer layer forming step of forming a buffer layer on an underlying substrate, a mask pattern forming step of forming, on the buffer layer, a mask pattern which partially covers the buffer layer, a growth step of growing a group III nitride crystal from regions exposed by the mask pattern on the surface of the buffer layer, thereby forming a structure in which a plurality of crystal members are arranged with gaps therebetween so as to partially cover the buffer layer and the mask pattern, a channel forming step of forming a channel, to supply a second etchant for the buffer layer to the buffer layer, by selectively etching the mask pattern using a first etchant for the mask pattern, and a separation step of separating the plurality of crystal members from the underlying substrate and separating the plurality of crystal members from each other by supplying the second etchant to the buffer layer through the gaps and the channel and selectively etching the buffer layer.
摘要翻译：一种器件制造方法，包括在下层基板上形成缓冲层的缓冲层形成步骤，在缓冲层上形成部分覆盖缓冲层的掩模图案的掩模图形形成步骤， III型氮化物晶体由缓冲层表面上的掩模图案露出的区域形成，从而形成多个晶体构件之间间隙地排列的结构，以部分地覆盖缓冲层和掩模图案，形成沟道形成通道的步骤，通过使用用于掩模图案的第一蚀刻剂选择性地蚀刻掩模图案，以及将多个晶体构件与下面的衬底分离的分离步骤，将缓冲层的第二蚀刻剂提供给缓冲层以及通过将所述第二蚀刻剂通过所述间隙和所述通道向所述缓冲层提供第二蚀刻剂，并且选择性地将所述多个晶体构件分离清洗缓冲层。

4. 发明申请

US20100009516A1 METHOD FOR GROWTH OF GaN SINGLE CRYSTAL, METHOD FOR PREPARATION OF GaN SUBSTRATE, PROCESS FOR PRODUCING GaN-BASED ELEMENT, AND GaN-BASED ELEMENT 有权
标题翻译： GaN单晶的生长方法，GaN衬底的制备方法，用于生产GaN基元件的工艺和基于GaN的元件
公开(公告)号：US20100009516A1
公开(公告)日：2010-01-14
申请号：US12545575
申请日：2009-08-21
申请人： Takafumi Yao , Meoung-Whan Cho
发明人： Takafumi Yao , Meoung-Whan Cho
IPC分类号： H01L21/82
CPC分类号： C30B29/406 , C30B25/02 , C30B25/183 , H01L21/0237 , H01L21/02458 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/0254 , H01L21/02614 , H01L29/2003 , H01L33/007 , H01L33/12
摘要： A GaN-based thin film (thick film) is grown using a metal buffer layer grown on a substrate. (a) A metal buffer layer (210) made of, for example, Cr or Cu is vapor-deposited on a sapphire substrate (120). (b) A substrate obtained by vapor-depositing the metal buffer layer (210) on the sapphire substrate (120) is nitrided in an ammonia gas ambient, thereby forming a metal nitride layer (212). (c) A GaN buffer layer (222) is grown on the nitrided metal buffer layers (210, 212). (d) Finally, a GaN single-crystal layer (220) is grown. This GaN single-crystal layer (220) can be grown to have various thicknesses depending on the objects. A freestanding substrate can be fabricated by selective chemical etching of the substrate fabricated by the above steps. It is also possible to use the substrate fabricated by the above steps as a GaN template substrate for fabricating a GaN-based light emitting diode or laser diode.
摘要翻译：使用在基板上生长的金属缓冲层来生长GaN基薄膜（厚膜）。（a）由例如Cr或Cu制成的金属缓冲层（210）气相沉积在蓝宝石衬底（120）上。（b）通过在蓝宝石衬底（120）上气相沉积金属缓冲层（210）而获得的衬底在氨气环境中氮化，从而形成金属氮化物层（212）。（c）在氮化金属缓冲层（210,212）上生长GaN缓冲层（222）。（d）最后，生长GaN单晶层（220）。根据目的，该GaN单晶层（220）可以生长成具有各种厚度。可以通过对通过上述步骤制造的衬底的选择性化学蚀刻来制造独立的衬底。还可以使用由上述步骤制造的衬底作为用于制造GaN基发光二极管或激光二极管的GaN模板衬底。

5. 发明申请

US20090045398A1 MANUFACTURE METHOD FOR ZnO BASED COMPOUND SEMICONDUCTOR CRYSTAL AND ZnO BASED COMPOUND SEMICONDUCTOR SUBSTRATE 有权
标题翻译：基于ZnO的化合物半导体晶体和ZnO基化合物半导体衬底的制造方法
公开(公告)号：US20090045398A1
公开(公告)日：2009-02-19
申请号：US12239739
申请日：2008-09-27
申请人： Hiroyuki Kato , Michihiro Sano , Katsumi Maeda , Hiroshi Yoneyama , Takafumi Yao , Meoung Whan Cho
发明人： Hiroyuki Kato , Michihiro Sano , Katsumi Maeda , Hiroshi Yoneyama , Takafumi Yao , Meoung Whan Cho
IPC分类号： H01L21/34 , H01L29/22
CPC分类号： C30B23/02 , C30B25/02 , C30B29/16 , H01L21/02403 , H01L21/0243 , H01L21/02433 , H01L21/02472 , H01L21/02554 , H01L21/02631 , H01L21/02658 , H01L21/02661 , Y10T428/265
摘要： A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the (0001) plane by about 2 degrees or less. ZnO based compound semiconductor crystal is grown on the principal surface.
摘要翻译：一种制造质量好的ZnO类化合物半导体晶体的制造方法。制备ZnO衬底具有由沿着m轴方向逐步布置的（0001）面的多个台阶形成的主表面，主表面的包络相对于（0001）面倾斜约2度，或减。 ZnO基化合物半导体晶体在主表面上生长。

6. 发明申请

US20070152233A1 Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate 有权
标题翻译：基于ZnO的化合物半导体晶体和ZnO基化合物半导体衬底的制造方法
公开(公告)号：US20070152233A1
公开(公告)日：2007-07-05
申请号：US11509063
申请日：2006-08-24
申请人： Hiroyuki Kato , Michihiro Sano , Katsumi Maeda , Hiroshi Yoneyama , Takafumi Yao , Meoung Cho
发明人： Hiroyuki Kato , Michihiro Sano , Katsumi Maeda , Hiroshi Yoneyama , Takafumi Yao , Meoung Cho
IPC分类号： H01L33/00 , H01L29/24 , H01L21/00
CPC分类号： C30B23/02 , C30B25/02 , C30B29/16 , H01L21/02403 , H01L21/0243 , H01L21/02433 , H01L21/02472 , H01L21/02554 , H01L21/02631 , H01L21/02658 , H01L21/02661 , Y10T428/265
摘要： A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the (0001) plane by about 2 degrees or less. ZnO based compound semiconductor crystal is grown on the principal surface.
摘要翻译：一种制造质量好的ZnO类化合物半导体晶体的制造方法。制备ZnO衬底具有由沿着m轴方向逐步布置的（0001）面的多个台阶形成的主表面，主表面的包络相对于（0001）面倾斜约2度，或减。 ZnO基化合物半导体晶体在主表面上生长。

7. 发明申请

US20050145840A1 ZnO group epitaxial semiconductor device and its manufacture 有权
标题翻译： ZnO组外延半导体器件及其制造
公开(公告)号：US20050145840A1
公开(公告)日：2005-07-07
申请号：US11031572
申请日：2005-01-06
申请人： Hiroyuki Kato , Kazuhiro Miyamoto , Michihiro Sano , Takafumi Yao
发明人： Hiroyuki Kato , Kazuhiro Miyamoto , Michihiro Sano , Takafumi Yao
IPC分类号： H01L21/363 , H01L29/04 , H01L29/22 , H01L29/225 , H01L33/06 , H01L33/28 , H01L33/42 , H01S5/327 , H01L29/10
CPC分类号： H01L33/28 , H01L21/02381 , H01L21/0242 , H01L21/02472 , H01L21/02483 , H01L21/02488 , H01L21/02516 , H01L21/02554 , H01L21/02576 , H01L21/02579 , H01L21/02631 , H01L29/045 , H01L29/22 , H01L29/225 , H01S5/327
摘要： A method for manufacturing a semiconductor device includes the steps of: (a) preparing a non-polar single crystal substrate; (b) epitaxially growing an MgO layer on the non-polar single crystal substrate to a thickness of 3 nm or thicker to have rocksalt structure at a substrate temperature of 500° C. to 800° C.; (c) growing on the MgO layer a low temrperature growth layer made of ZnO group material at a substrate temperature of 500° C. or lower; (d) annealing the low temperature growth layer above the substrate at a temperature of 700° C. or higher; and (e) epitaxially growing a high temperature growth layer of ZnO group material on the annealed low temperature growth layer at a temperature of 600° C. or higher.
摘要翻译：一种制造半导体器件的方法包括以下步骤：（a）制备非极性单晶衬底; （b）在非极性单晶衬底上外延生长3nm或更厚的MgO层，以在500℃至800℃的衬底温度下具有岩盐结构。（c）在500℃或更低的衬底温度下在MgO层上生长由ZnO基材料制成的低温生长层; （d）在700℃或更高的温度下使基材上方的低温生长层退火; 和（e）在退火的低温生长层上在600℃或更高的温度下外延生长ZnO基材料的高温生长层。

8. 发明授权

US08216869B2 Group III nitride semiconductor and a manufacturing method thereof 有权
标题翻译： III族氮化物半导体及其制造方法
公开(公告)号：US08216869B2
公开(公告)日：2012-07-10
申请号：US12230284
申请日：2008-08-27
申请人： Takafumi Yao , Meoung-Whan Cho , Ryuichi Toba
发明人： Takafumi Yao , Meoung-Whan Cho , Ryuichi Toba
IPC分类号： H01L21/00
CPC分类号： H01L21/02664 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02491 , H01L21/02502 , H01L21/02513 , H01L21/0254 , H01L21/0262
摘要： A manufacturing method of a group III nitride semiconductor includes the steps of: depositing a metal layer on an AlN template substrate or an AlN single crystal substrate formed by depositing an AlN single crystal layer with a thickness of not less than 0.1 μm nor more than 10 μm on a substrate made of either one of sapphire, SiC, and Si; forming a metal nitride layer having a plurality of substantially triangular-pyramid-shaped or triangular-trapezoid-shaped microcrystals by performing a heating nitridation process on the metal layer under a mixed gas atmosphere of ammonia; and depositing a group III nitride semiconductor layer on the metal nitride layer.
摘要翻译： III族氮化物半导体的制造方法包括以下步骤：在AlN模板衬底或AlN单晶衬底上沉积金属层，所述AlN单晶衬底通过沉积厚度不小于0.1μm不大于10的AlN单晶层而形成在由蓝宝石，SiC和Si中的任一个制成的基板上; 通过在氨的混合气体气氛下对所述金属层进行加热氮化处理，形成具有多个大致三角锥形或三角形梯形微晶的金属氮化物层; 以及在所述金属氮化物层上沉积III族氮化物半导体层。

9. 发明授权

US08124504B2 Method for growth of GaN single crystal, method for preparation of GaN substrate, process for producing GaN-based element, and GaN-based element 有权
标题翻译： GaN单晶的生长方法，GaN衬底的制备方法，GaN系元素的制造方法以及GaN系元素
公开(公告)号：US08124504B2
公开(公告)日：2012-02-28
申请号：US12691411
申请日：2010-01-21
申请人： Takafumi Yao , Meoung-Whan Cho
发明人： Takafumi Yao , Meoung-Whan Cho
IPC分类号： H01L21/20
CPC分类号： C30B29/406 , C30B25/02 , C30B25/183 , H01L21/0237 , H01L21/02458 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/0254 , H01L21/02614 , H01L29/2003 , H01L33/007 , H01L33/12
摘要： A GaN-based thin film (thick film) is grown using a metal buffer layer grown on a substrate. (a) A metal buffer layer (210) made of, for example, Cr or Cu is vapor-deposited on a sapphire substrate (120). (b) A substrate obtained by vapor-depositing the metal buffer layer (210) on the sapphire substrate (120) is nitrided in an ammonia gas ambient, thereby forming a metal nitride layer (212). (c) A GaN buffer layer (222) is grown on the nitrided metal buffer layers (210, 212). (d) Finally, a GaN single-crystal layer (220) is grown. This GaN single-crystal layer (220) can be grown to have various thicknesses depending on the objects. A freestanding substrate can be fabricated by selective chemical etching of the substrate fabricated by the above steps. It is also possible to use the substrate fabricated by the above steps as a GaN template substrate for fabricating a GaN-based light emitting diode or laser diode.
摘要翻译：使用在基板上生长的金属缓冲层来生长GaN基薄膜（厚膜）。（a）由例如Cr或Cu制成的金属缓冲层（210）气相沉积在蓝宝石衬底（120）上。（b）通过在蓝宝石衬底（120）上气相沉积金属缓冲层（210）而获得的衬底在氨气环境中氮化，从而形成金属氮化物层（212）。（c）在氮化金属缓冲层（210,212）上生长GaN缓冲层（222）。（d）最后，生长GaN单晶层（220）。根据目的，该GaN单晶层（220）可以生长成具有各种厚度。可以通过对通过上述步骤制造的衬底的选择性化学蚀刻来制造独立的衬底。还可以使用由上述步骤制造的衬底作为用于制造GaN基发光二极管或激光二极管的GaN模板衬底。

10. 发明授权

US07829435B2 Method for growth of GaN single crystal, method for preparation of GaN substrate, process for producing GaN-based element, and GaN-based element 有权
标题翻译： GaN单晶的生长方法，GaN衬底的制备方法，GaN系元素的制造方法以及GaN系元素
公开(公告)号：US07829435B2
公开(公告)日：2010-11-09
申请号：US12545575
申请日：2009-08-21
申请人： Takafumi Yao , Meoung-Whan Cho
发明人： Takafumi Yao , Meoung-Whan Cho
IPC分类号： H01L21/30
CPC分类号： C30B29/406 , C30B25/02 , C30B25/183 , H01L21/0237 , H01L21/02458 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/0254 , H01L21/02614 , H01L29/2003 , H01L33/007 , H01L33/12
摘要： A GaN-based thin film (thick film) is grown using a metal buffer layer grown on a substrate. (a) A metal buffer layer (210) made of, for example, Cr or Cu is vapor-deposited on a sapphire substrate (120). (b) A substrate obtained by vapor-depositing the metal buffer layer (210) on the sapphire substrate (120) is nitrided in an ammonia gas ambient, thereby forming a metal nitride layer (212). (c) A GaN buffer layer (222) is grown on the nitrided metal buffer layers (210, 212). (d) Finally, a GaN single-crystal layer (220) is grown. This GaN single-crystal layer (220) can be grown to have various thicknesses depending on the objects. A freestanding substrate can be fabricated by selective chemical etching of the substrate fabricated by the above steps. It is also possible to use the substrate fabricated by the above steps as a GaN template substrate for fabricating a GaN-based light emitting diode or laser diode.
摘要翻译：使用在基板上生长的金属缓冲层来生长GaN基薄膜（厚膜）。（a）由例如Cr或Cu制成的金属缓冲层（210）气相沉积在蓝宝石衬底（120）上。（b）通过在蓝宝石衬底（120）上气相沉积金属缓冲层（210）而获得的衬底在氨气环境中氮化，从而形成金属氮化物层（212）。（c）在氮化金属缓冲层（210,212）上生长GaN缓冲层（222）。（d）最后，生长GaN单晶层（220）。根据目的，该GaN单晶层（220）可以生长成具有各种厚度。可以通过对通过上述步骤制造的衬底的选择性化学蚀刻来制造独立的衬底。还可以使用由上述步骤制造的衬底作为用于制造GaN基发光二极管或激光二极管的GaN模板衬底。

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