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    • 3. 发明授权
    • Device manufacturing method
    • 器件制造方法
    • US07906409B2
    • 2011-03-15
    • US12405696
    • 2009-03-17
    • Takafumi YaoMeoung-Whan Cho
    • Takafumi YaoMeoung-Whan Cho
    • H01L21/00
    • H01L33/007H01L21/0242H01L21/02488H01L21/02491H01L21/02502H01L21/0254H01L21/02639H01L21/02647H01L33/0079H01L33/12H01L33/20
    • A device manufacturing method includes a buffer layer forming step of forming a buffer layer on an underlying substrate, a mask pattern forming step of forming, on the buffer layer, a mask pattern which partially covers the buffer layer, a growth step of growing a group III nitride crystal from regions exposed by the mask pattern on the surface of the buffer layer, thereby forming a structure in which a plurality of crystal members are arranged with gaps therebetween so as to partially cover the buffer layer and the mask pattern, a channel forming step of forming a channel, to supply a second etchant for the buffer layer to the buffer layer, by selectively etching the mask pattern using a first etchant for the mask pattern, and a separation step of separating the plurality of crystal members from the underlying substrate and separating the plurality of crystal members from each other by supplying the second etchant to the buffer layer through the gaps and the channel and selectively etching the buffer layer.
    • 一种器件制造方法,包括在下层基板上形成缓冲层的缓冲层形成步骤,在缓冲层上形成部分覆盖缓冲层的掩模图案的掩模图形形成步骤, III型氮化物晶体由缓冲层表面上的掩模图案露出的区域形成,从而形成多个晶体构件之间间隙地排列的结构,以部分地覆盖缓冲层和掩模图案,形成沟道 形成通道的步骤,通过使用用于掩模图案的第一蚀刻剂选择性地蚀刻掩模图案,以及将多个晶体构件与下面的衬底分离的分离步骤,将缓冲层的第二蚀刻剂提供给缓冲层 以及通过将所述第二蚀刻剂通过所述间隙和所述通道向所述缓冲层提供第二蚀刻剂,并且选择性地将所述多个晶体构件分离 清洗缓冲层。