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1. 发明申请

US20120119242A1 LIGHT-EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：US20120119242A1
公开(公告)日：2012-05-17
申请号：US13052247
申请日：2011-03-21
申请人： Katsufumi Kondo
发明人： Katsufumi Kondo
IPC分类号： H01L33/46
CPC分类号： H01L33/46 , H01L33/08 , H01L33/20 , H01L33/405
摘要： According to one embodiment, a light emitting device includes a support body, a first light emitting portion, a second light emitting portion, and a second reflector. The support body includes a first reflector. The first light emitting portion and the second light emitting portion are provided on the support body and include a light emitting layer. Downward directed light of emission light from the light emitting layer is capable of being reflected upward by the first reflector. The second reflector is interposed between the first light emitting portion and the second light emitting portion, provided on the support body, has a cross-sectional shape expanding downward, and includes a side surface metal layer provided on a side surface of the second reflector.
摘要翻译：根据一个实施例，发光器件包括支撑体，第一发光部分，第二发光部分和第二反射器。支撑体包括第一反射器。第一发光部分和第二发光部分设置在支撑体上并且包括发光层。来自发光层的发射光的向下定向的光能够被第一反射器向上反射。第二反射器设置在第一发光部分和第二发光部分之间，设置在支撑体上，具有向下扩展的横截面形状，并且包括设置在第二反射器的侧表面上的侧表面金属层。

2. 发明申请

US20100065813A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20100065813A1
公开(公告)日：2010-03-18
申请号：US12434056
申请日：2009-05-01
申请人： Katsufumi Kondo , Ryo Saeki
发明人： Katsufumi Kondo , Ryo Saeki
IPC分类号： H01L33/00
CPC分类号： H01L33/0079
摘要： A light emitting device includes a stacked body including at least a light emitting layer made of Inx(AlyGa1-y)1-xP (0≦x≦1, 0≦y≦1), a p-type cladding layer made of Inx(AlyGa1-y)1-xP (0≦x≦1, 0≦y≦1), and a bonding layer made of a semiconductor; and a substrate in which deviation in a lattice constant at a bonding interface with the bonding layer is larger than deviation in lattice constants between the light emitting layer and the bonding layer. The p-type cladding layer is located more distant from the bonding interface than the light emitting layer, and the p-type cladding layer has a carrier concentration of 0.5×1017 cm−3 or more and 3×1017 cm−3 or less.
摘要翻译：发光器件包括至少包括由Inx（Al y Ga 1-y）1-x P（0＆nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1）构成的发光层的堆叠体，由Inx AlyGa1-y）1-xP（0＆nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1）和由半导体制成的接合层; 以及在与结合层的接合界面处的晶格常数偏差大于发光层和接合层之间的晶格常数偏差的基板。 p型覆层与发光层的结合界面更远离，p型覆层的载流子浓度为0.5×10 17 cm -3以上3×1017cm -3以下。

3. 发明申请

US20090224269A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME, AND EPITAXIAL WAFER 有权
标题翻译：半导体发光器件及其制造方法和外延波形
公开(公告)号：US20090224269A1
公开(公告)日：2009-09-10
申请号：US12391283
申请日：2009-02-24
申请人： Ryo Saeki , Katsufumi Kondo , Yasuo Idei
发明人： Ryo Saeki , Katsufumi Kondo , Yasuo Idei
IPC分类号： H01L33/00 , H01L21/20 , H01L29/20
CPC分类号： H01L33/0079
摘要： A semiconductor light emitting device includes: an upper growth layer including a light emitting layer; a transparent substrate through which a radiant light from the light emitting layer passes; and a foundation layer provided between the upper growth layer and the transparent substrate, the foundation layer having a surface-controlling layer and a bonding layer bonded with the transparent substrate. The surface-controlling layer is made of compound semiconductor including at least Ga and As. The upper growth layer is formed on an upper surface of the surface-controlling layer. A lattice constant difference at an interface between the surface-controlling layer and the upper growth layer is smaller than that at an interface between the bonding layer and the transparent substrate.
摘要翻译：一种半导体发光器件包括：包含发光层的上部生长层; 来自发光层的辐射光通过的透明基板; 以及设置在上部生长层和透明基板之间的基底层，基底层具有表面控制层和与透明基板结合的结合层。表面控制层由至少包括Ga和As的化合物半导体制成。上部生长层形成在表面控制层的上表面上。在表面控制层和上部生长层之间的界面处的晶格常数差小于接合层和透明基板之间的界面处的晶格常数差。

4. 发明授权

US5481355A Flying spherical body measuring apparatus 失效
标题翻译：飞球体测量仪
公开(公告)号：US5481355A
公开(公告)日：1996-01-02
申请号：US102345
申请日：1993-08-05
申请人： Kenzaburou Iijima , Katsufumi Kondo , Katsuhiko Masuda , Kouji Yataka , Yasuyuki Chujo
发明人： Kenzaburou Iijima , Katsufumi Kondo , Katsuhiko Masuda , Kouji Yataka , Yasuyuki Chujo
IPC分类号： A63B69/36 , G01P3/36 , G01P3/68 , G01B11/12
CPC分类号： A63B24/0021 , A63B69/3658 , G01P3/36 , G01P3/68 , A63B2024/0031 , A63B2024/0034 , A63B2220/30 , A63B2220/35 , A63B2220/805
摘要： The initial movement of a spherical body is detected by detecting the intersection with a light beam emitted from trigger light illuminating portion 2 to trigger light-receiving portion 3, and as a result, measurement of time by an arithmetic processing unit is started. During flight, spherical body 1 intersects light beams emitted from surface velocity sensors 4 and 5, the reflected light therein is detected by these surface velocity sensors 4 and 5, and the surface velocity of spherical body 1 is then measured. Spherical body 1 continues in flight and intersects at least two light beams irradiated from multi-beam illuminating portion 6 which are detected by multi-beam light-receiving portion 7. Based on a signal from multi-beam light-receiving portion 7 the arithmetic processing unit measures the time of intersection of spherical body 1 with a light beam, and then calculates the angle of elevation, horizontal angle, velocity and surface velocity of spherical body 1 based on the aforementioned measured time period. Furthermore, this arithmetic processing unit also calculates the amount of directional rotation of spherical body 1 based on the aforementioned calculated angle of elevation, horizontal angle, velocity and surface velocity of spherical body 1.
摘要翻译：通过检测与从触发光照射部分2发射的光束的交点来触发光接收部分3来检测球体的初始移动，结果，开始由算术处理单元测量时间。在飞行中，球体1与表面速度传感器4和5发射的光束相交，其中的反射光被这些表面速度传感器4和5检测，然后测量球体1的表面速度。球形体1在飞行中继续，并与由多光束照射部分6照射的至少两个光束相交，由多光束光接收部分7检测。根据来自多光束光接收部分7的信号，算术处理单位测量球体1与光束的交叉时间，然后根据上述测量时间周期计算球体1的仰角，水平角，速度和表面速度。此外，该算术处理单元还基于上述计算的球体1的仰角，水平角，速度和表面速度来计算球体1的定向旋转量。

5. 发明申请

US20130221378A1 LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：US20130221378A1
公开(公告)日：2013-08-29
申请号：US13605899
申请日：2012-09-06
申请人： Tokuhiko MATSUNAGA , Katsufumi Kondo
发明人： Tokuhiko MATSUNAGA , Katsufumi Kondo
IPC分类号： H01L33/62
CPC分类号： H01L33/38 , H01L2933/0016
摘要： An LED manufacturing method includes the steps of forming a first insulator film on a semiconductor layer, forming a laminated body including a mask layer and an electrode on the first insulator film, forming a second insulator film to cover the laminated body and a first region of the first insulator film where a laminated body is not formed, anisotropic etching the second insulator film to expose the top surface of the mask layer and a second region of the first insulator film, exposing the surface of a semiconductor layer by removing the first insulator film while keeping the first insulator film between the laminated body and the semiconductor layer, removing the mask layer, and forming a clear conducting layer on top of the exposed surface of the semiconductor layer and the electrode.
摘要翻译： LED制造方法包括以下步骤：在半导体层上形成第一绝缘膜，在第一绝缘膜上形成包括掩模层和电极的层叠体，形成第二绝缘膜以覆盖层叠体;以及第一区域没有形成层叠体的第一绝缘体膜，对第二绝缘膜进行各向异性蚀刻以露出掩模层的顶表面和第一绝缘膜的第二区域，通过去除第一绝缘膜暴露半导体层的表面同时保持层叠体和半导体层之间的第一绝缘体膜，去除掩模层，并在半导体层和电极的暴露表面的顶部上形成透明导电层。

6. 发明授权

US08384063B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08384063B2
公开(公告)日：2013-02-26
申请号：US13345801
申请日：2012-01-09
申请人： Katsufumi Kondo , Ryo Saeki
发明人： Katsufumi Kondo , Ryo Saeki
IPC分类号： H01L29/06 , H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336
CPC分类号： H01L33/0079
摘要： A light emitting device includes a stacked body including at least a light emitting layer made of Inx(AlyGa1-y)1-xP(0≦x≦1, 0≦y≦1), a p-type cladding layer made of Inx(AlyGa1-y)1-xP (0≦x≦1, 0≦y≦1), and a bonding layer made of a semiconductor; and a substrate in which deviation in a lattice constant at a bonding interface with the bonding layer is larger than deviation in lattice constants between the light emitting layer and the bonding layer. The p-type cladding layer is located more distant from the bonding interface than the light emitting layer, and the p-type cladding layer has a carrier concentration of 0.5×1017 cm−3 or more and 3×1017 cm−3 or less.
摘要翻译：发光器件包括至少包括由Inx（Al y Ga 1-y）1-x P（0＆nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1）构成的发光层的堆叠体，由Inx AlyGa1-y）1-xP（0＆nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1）和由半导体制成的接合层; 以及在与结合层的接合界面处的晶格常数偏差大于发光层和接合层之间的晶格常数偏差的基板。 p型覆层与发光层的结合界面更远离，p型覆层的载流子浓度为0.5×10 17 cm -3以上3×1017cm -3以下。

7. 发明申请

US20120018752A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120018752A1
公开(公告)日：2012-01-26
申请号：US13039583
申请日：2011-03-03
申请人： Akihiro FUJIWARA , Takashi HAKUNO , Tokuhiko MATSUNAGA , Kimitaka YOSHIMURA , Katsufumi KONDO
发明人： Akihiro FUJIWARA , Takashi HAKUNO , Tokuhiko MATSUNAGA , Kimitaka YOSHIMURA , Katsufumi KONDO
IPC分类号： H01L33/40 , H01L33/30
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/0095 , H01L33/40 , H01L2933/0008
摘要： According to one embodiment, a semiconductor device includes a substrate and a stacked body on the substrate via a joining metal layer. The stacked body includes a device portion and a peripheral portion. The device portion includes from a bottommost layer to a topmost layer included in the stacked body. The peripheral portion surrounding and provided around the device portion; the peripheral portion is a portion of the bottommost layer to the topmost layer included in the stacked body and includes a portion of a semiconductor layer in contact with the joining metal layer.
摘要翻译：根据一个实施例，半导体器件通过接合金属层包括衬底和衬底上的层叠体。堆叠体包括器件部分和周边部分。装置部分包括从堆叠体中包含的最底层到最顶层。围绕并设置在装置部分周围的周边部分; 外围部分是包括在层叠体中的最下层到最顶层的部分，并且包括与接合金属层接触的半导体层的一部分。

8. 发明授权

US06936864B2 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US06936864B2
公开(公告)日：2005-08-30
申请号：US10780534
申请日：2004-02-17
申请人： Katsufumi Kondo
发明人： Katsufumi Kondo
IPC分类号： H01L33/14 , H01L33/30 , H01S5/00 , H01L33/00
CPC分类号： H01L33/20 , H01L33/08 , H01L33/145
摘要： A semiconductor light emitting element comprising: a first layer; a semiconductor light emitting layer; a current blocking layer; a second layer; a first electrode; and a second electrode is provided. The semiconductor light emitting layer is selectively provided on the first layer. The current blocking layer of high resistance is provided around the semiconductor light emitting layer on the first layer. The second layer is provided on the semiconductor light emitting layer and the current blocking layer. The first electrode is provided on the second layer. The second electrode is provided on the back of the first layer. A part of a light emitted from the semiconductor light emitting layer is emitted outside through the first layer, and a part of the light emitted from the semiconductor light emitting layer is emitted outside through the second layer.
摘要翻译：一种半导体发光元件，包括：第一层; 半导体发光层; 电流阻挡层; 第二层; 第一电极; 并提供第二电极。半导体发光层选择性地设置在第一层上。在第一层上的半导体发光层周围设置有电阻的电流阻挡层。第二层设置在半导体发光层和电流阻挡层上。第一电极设置在第二层上。第二电极设置在第一层的背面。从半导体发光层发射的光的一部分通过第一层发射到外部，并且从半导体发光层发射的一部分光通过第二层发射到外部。

9. 发明申请

US20060145171A1 Semiconductor light emitting element and semiconductor light emitting device 有权
公开(公告)号：US20060145171A1
公开(公告)日：2006-07-06
申请号：US11371873
申请日：2006-03-08
申请人： Koichi Nitta , Takafumi Nakamura , Kuniaki Konno , Yasuhiko Akaike , Yoshiki Endo , Katsufumi Kondo
发明人： Koichi Nitta , Takafumi Nakamura , Kuniaki Konno , Yasuhiko Akaike , Yoshiki Endo , Katsufumi Kondo
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/22 , H01L33/38 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/10155 , H01L2924/00014 , H01L2924/00
摘要： For the purpose of enhancing the light extracting efficiency, improving the production yield and elongating the lifetime of a semiconductor light emitting element or a semiconductor light emitting device using the element, a semiconductor light emitting element comprises: a light emitting layer that emits light; and a substrate transparent to the light emitted from the light emitting layer. The substrate defines a top surface supporting the light emitting layer thereon; a bottom surface opposed to the top surface and side surfaces connecting the top surface and the bottom surface. Each of the side surfaces is composed of first side surface extending from the top surface toward the bottom surface, second side surface extending from the first side surface toward the bottom surface, and third side surface extending from the second side surface toward the bottom surface. The third side surfaces incline to diverge toward the top surface, and the second side surfaces incline to diverge more toward the top surface to extract part of the light from the light emitting layer externally. The first side surfaces are formed by cleavage along cleavable planes.

10. 发明授权

US06548834B2 Semiconductor light emitting element 失效
公开(公告)号：US06548834B2
公开(公告)日：2003-04-15
申请号：US10057283
申请日：2002-01-25
申请人： Hideto Sugawara , Koichi Nitta , Ryo Saeki , Katsufumi Kondo , Masanobu Iwamoto
发明人： Hideto Sugawara , Koichi Nitta , Ryo Saeki , Katsufumi Kondo , Masanobu Iwamoto
IPC分类号： H01L3300
CPC分类号： H01L33/08 , H01L27/15
摘要： A semiconductor light emitting element is proposed that improves a light extraction efficiency without requiring any complicated processes and techniques. The semiconductor light emitting element includes an active layer for emitting first light by current injection, and a light absorbing and emitting section for absorbing a part of the first light and for emitting second light having a greater peak wavelength than the first light. A difference in peak wavelength between the first light and the second light is in a range in which a spectrum of a mixture of the first and second light maintains a unimodal characteristic or is smaller than 0.9 times a half width of the spectrum of the first light.

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