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1. 发明申请

US20060145171A1 Semiconductor light emitting element and semiconductor light emitting device 有权
公开(公告)号：US20060145171A1
公开(公告)日：2006-07-06
申请号：US11371873
申请日：2006-03-08
申请人： Koichi Nitta , Takafumi Nakamura , Kuniaki Konno , Yasuhiko Akaike , Yoshiki Endo , Katsufumi Kondo
发明人： Koichi Nitta , Takafumi Nakamura , Kuniaki Konno , Yasuhiko Akaike , Yoshiki Endo , Katsufumi Kondo
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/22 , H01L33/38 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/10155 , H01L2924/00014 , H01L2924/00
摘要： For the purpose of enhancing the light extracting efficiency, improving the production yield and elongating the lifetime of a semiconductor light emitting element or a semiconductor light emitting device using the element, a semiconductor light emitting element comprises: a light emitting layer that emits light; and a substrate transparent to the light emitted from the light emitting layer. The substrate defines a top surface supporting the light emitting layer thereon; a bottom surface opposed to the top surface and side surfaces connecting the top surface and the bottom surface. Each of the side surfaces is composed of first side surface extending from the top surface toward the bottom surface, second side surface extending from the first side surface toward the bottom surface, and third side surface extending from the second side surface toward the bottom surface. The third side surfaces incline to diverge toward the top surface, and the second side surfaces incline to diverge more toward the top surface to extract part of the light from the light emitting layer externally. The first side surfaces are formed by cleavage along cleavable planes.

2. 发明授权

US07329903B2 Semiconductor light emitting element having three side surfaces inclined to connect the top and bottom surfaces of the transparent substrate 有权
标题翻译：具有倾斜以连接透明基板的顶表面和底表面的三个侧表面的半导体发光元件
公开(公告)号：US07329903B2
公开(公告)日：2008-02-12
申请号：US11371873
申请日：2006-03-08
申请人： Koichi Nitta , Takafumi Nakamura , Kuniaki Konno , Yasuhiko Akaike , Yoshiki Endo , Katsufumi Kondo
发明人： Koichi Nitta , Takafumi Nakamura , Kuniaki Konno , Yasuhiko Akaike , Yoshiki Endo , Katsufumi Kondo
IPC分类号： H01L27/15 , H01L31/12 , H01L33/00
CPC分类号： H01L33/20 , H01L33/22 , H01L33/38 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/10155 , H01L2924/00014 , H01L2924/00
摘要： For the purpose of enhancing the light extracting efficiency, improving the production yield and elongating the lifetime of a semiconductor light emitting element or a semiconductor light emitting device using the element, a semiconductor light emitting element comprises: a light emitting layer that emits light; and a substrate transparent to the light emitted from the light emitting layer. The substrate defines a top surface supporting the light emitting layer thereon; a bottom surface opposed to the top surface and side surfaces connecting the top surface and the bottom surface. Each of the side surfaces is composed of first side surface extending from the top surface toward the bottom surface, second side surface extending from the first side surface toward the bottom surface, and third side surface extending from the second side surface toward the bottom surface. The third side surfaces incline to diverge toward the top surface, and the second side surfaces incline to diverge more toward the top surface to extract part of the light from the light emitting layer externally. The first side surfaces are formed by cleavage along cleavable planes.
摘要翻译：为了提高光提取效率，提高使用该元素的半导体发光元件或半导体发光元件的制造成品率和延长寿命，半导体发光元件包括：发光的发光层; 以及对从发光层发射的光透明的衬底。衬底限定了在其上支撑发光层的顶表面; 与上表面相对的底表面和连接顶表面和底表面的侧表面。每个侧表面由从顶表面向底表面延伸的第一侧表面，从第一侧表面向底表面延伸的第二侧表面和从第二侧表面向底表面延伸的第三侧表面组成。第三侧表面向顶表面倾斜，并且第二侧表面倾斜向顶表面倾斜，以从外部从发光层提取部分光。第一侧表面通过沿着可切割平面的切割而形成。

3. 发明申请

US20060151798A1 Semiconductor light emitting element and semiconductor light emitting device 审中-公开
公开(公告)号：US20060151798A1
公开(公告)日：2006-07-13
申请号：US11371717
申请日：2006-03-09
申请人： Koichi Nitta , Takafumi Nakamura , Kuniaki Konno , Yasuhiko Akaike , Yoshiki Endo , Katsufumi Kondo
发明人： Koichi Nitta , Takafumi Nakamura , Kuniaki Konno , Yasuhiko Akaike , Yoshiki Endo , Katsufumi Kondo
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/22 , H01L33/38 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/10155 , H01L2924/10158 , H01L2924/00014 , H01L2924/00
摘要： For the purpose of enhancing the light extracting efficiency, improving the production yield and elongating the lifetime of a semiconductor light emitting element or a semiconductor light emitting device using the element, a semiconductor light emitting element comprises: a light emitting layer that emits light; and a substrate transparent to the light emitted from the light emitting layer. The substrate defines a top surface supporting the light emitting layer thereon; a bottom surface opposed to the top surface and side surfaces connecting the top surface and the bottom surface. Each of the side surfaces is composed of first side surface extending from the top surface toward the bottom surface, second side surface extending from the first side surface toward the bottom surface, and third side surface extending from the second side surface toward the bottom surface. The third side surfaces incline to diverge toward the top surface, and the second side surfaces incline to diverge more toward the top surface to extract part of the light from the light emitting layer externally. The first side surfaces are formed by cleavage along cleavable planes.

4. 发明授权

US07038245B2 Semiconductor light emitting device having angled side surface 失效
标题翻译：半导体发光器件具有成角度的侧面
公开(公告)号：US07038245B2
公开(公告)日：2006-05-02
申请号：US10388376
申请日：2003-03-13
申请人： Koichi Nitta , Takafumi Nakamura , Kuniaki Konno , Yasuhiko Akaike , Yoshiki Endo , Katsufumi Kondo
发明人： Koichi Nitta , Takafumi Nakamura , Kuniaki Konno , Yasuhiko Akaike , Yoshiki Endo , Katsufumi Kondo
IPC分类号： H01L27/15 , H01L31/12 , H01L33/00
CPC分类号： H01L33/20 , H01L33/22 , H01L33/38 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/10155 , H01L2924/00014 , H01L2924/00
摘要： For the purpose of enhancing the light extracting efficiency, improving the production yield and elongating the lifetime of a semiconductor light emitting element or a semiconductor light emitting device using the element, a semiconductor light emitting element comprises: a light emitting layer that emits light; and a substrate transparent to the light emitted from the light emitting layer. The substrate defines a top surface supporting the light emitting layer thereon; a bottom surface opposed to the top surface and side surfaces connecting the top surface and the bottom surface. Each of the side surfaces is composed of first side surface extending from the top surface toward the bottom surface, second side surface extending from the first side surface toward the bottom surface, and third side surface extending from the second side surface toward the bottom surface. The third side surfaces incline to diverge toward the top surface, and the second side surfaces incline to diverge more toward the top surface to extract part of the light from the light emitting layer externally. The first side surfaces are formed by cleavage along cleavable planes.
摘要翻译：为了提高光提取效率，提高使用该元素的半导体发光元件或半导体发光元件的制造成品率和延长寿命，半导体发光元件包括：发光的发光层; 以及对从发光层发射的光透明的衬底。衬底限定了在其上支撑发光层的顶表面; 与上表面相对的底表面和连接顶表面和底表面的侧表面。每个侧表面由从顶表面向底表面延伸的第一侧表面，从第一侧表面向底表面延伸的第二侧表面和从第二侧表面向底表面延伸的第三侧表面组成。第三侧表面向顶表面倾斜，并且第二侧表面倾斜向顶表面倾斜，以从外部从发光层提取部分光。第一侧表面通过沿着可切割平面的切割而形成。

5. 发明申请

US20050017250A1 Semiconductor light emitting element, its manufacturing method and semiconductor light emitting device 有权
标题翻译：半导体发光元件及其制造方法以及半导体发光元件
公开(公告)号：US20050017250A1
公开(公告)日：2005-01-27
申请号：US10863269
申请日：2004-06-09
申请人： Koichi Nitta , Takafumi Nakamura , Akihiro Fujiwara , Kuniaki Konno , Yasuharu Sugawara
发明人： Koichi Nitta , Takafumi Nakamura , Akihiro Fujiwara , Kuniaki Konno , Yasuharu Sugawara
IPC分类号： H01L21/205 , H01L21/306 , H01L29/06 , H01L33/06 , H01L33/10 , H01L33/14 , H01L33/16 , H01L33/22 , H01L33/30 , H01L33/54 , H01L33/60 , H01L33/62
CPC分类号： H01L33/30 , H01L33/16 , H01L33/20 , H01L33/22 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2924/1815 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A light emitting element comprises a GaP substrate and a mesa portion. The GaP substrate includes a major surface inclined to the direction from the {100} plane and a side surface covered with inequalities substantially. The mesa portion has a light emitting multi-layer of InGaAlP based material provided on the major surface. A part of a light emitted from the light emitting multi-layer is extracted through the side surface of the GaP substrate.
摘要翻译：发光元件包括GaP衬底和台面部分。 GaP衬底包括从{100}平面倾斜到<011>方向的主表面和基本上被不等式覆盖的侧表面。台面部分具有设置在主表面上的发光多层InGaAlP基材料。从发光多层发射的光的一部分通过GaP衬底的侧表面提取。

6. 发明授权

US07488989B2 Semiconductor light emitting element, its manufacturing method and semiconductor light emitting device 有权
标题翻译：半导体发光元件及其制造方法以及半导体发光元件
公开(公告)号：US07488989B2
公开(公告)日：2009-02-10
申请号：US10863269
申请日：2004-06-09
申请人： Koichi Nitta , Takafumi Nakamura , Akihiro Fujiwara , Kuniaki Konno , Yasuharu Sugawara
发明人： Koichi Nitta , Takafumi Nakamura , Akihiro Fujiwara , Kuniaki Konno , Yasuharu Sugawara
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L33/16 , H01L33/20 , H01L33/22 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2924/1815 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A light emitting element comprises a GaP substrate and a mesa portion. The GaP substrate includes a major surface inclined to the direction from the {100} plane and a side surface covered with inequalities substantially. The mesa portion has a light emitting multi-layer of InGaAlP based material provided on the major surface. A part of a light emitted from the light emitting multi-layer is extracted through the side surface of the GaP substrate.
摘要翻译：发光元件包括GaP衬底和台面部分。 GaP衬底包括从{100}平面倾斜到<011>方向的主表面和基本上被不等式覆盖的侧表面。台面部分具有设置在主表面上的发光多层InGaAlP基材料。从发光多层发射的光的一部分通过GaP衬底的侧表面提取。

7. 发明申请

US20130071430A1 MICRORNA-CONTROLLED RECOMBINANT VACCINIA VIRUS AND USE THEREOF 审中-公开
标题翻译：微管控制的重组疫苗病毒及其用途
公开(公告)号：US20130071430A1
公开(公告)日：2013-03-21
申请号：US13639784
申请日：2011-03-15
申请人： Takafumi Nakamura , Mina Hikichi , Hideaki Tahara , Hisatoshi Shida , Minoru Kidokoro
发明人： Takafumi Nakamura , Mina Hikichi , Hideaki Tahara , Hisatoshi Shida , Minoru Kidokoro
IPC分类号： C12N7/00
CPC分类号： C12N7/00 , A61K35/13 , A61K35/768 , C12N15/86 , C12N2710/24121 , C12N2710/24122 , C12N2710/24132 , C12N2710/24143 , C12N2840/007 , C12N2840/102 , G01N33/5011
摘要： It is intended to provide a vaccinia virus that specifically proliferates in a cancer cell and destroys the cancer cell and to provide use of the virus in cancer treatment. The present invention provides a microRNA-controlled vaccinia virus, in which a target sequence of a microRNA less expressed in a cancer cell than in a normal cell is inserted in a 3′ untranslated region of B5R gene associated with viral proliferation in a vaccinia virus, wherein the microRNA-controlled vaccinia virus specifically proliferates in the cancer cell and has an oncolytic property that destroys the cancer cell.
摘要翻译：旨在提供在癌细胞中特异性增殖并破坏癌细胞并在癌症治疗中提供该病毒的用途的痘苗病毒。本发明提供了一种微小RNA控制的痘苗病毒，其中在癌细胞中比在正常细胞中较少表达的微小RNA的靶序列插入到与痘苗病毒中的病毒增殖相关的B5R基因的3'非翻译区中，其中所述微小RNA控制的痘苗病毒在癌细胞中特异性增殖，并且具有破坏癌细胞的溶瘤性质。

8. 发明申请

US20120111127A1 Autosampler 有权
标题翻译：自动进样器
公开(公告)号：US20120111127A1
公开(公告)日：2012-05-10
申请号：US13382499
申请日：2010-09-01
申请人： Yoshiaki Maeda , Kenichi Yasunaga , Takafumi Nakamura
发明人： Yoshiaki Maeda , Kenichi Yasunaga , Takafumi Nakamura
IPC分类号： G01N1/22
CPC分类号： G01N30/24 , G01N30/18 , G01N30/20 , G01N35/1097 , G01N2030/202
摘要： An autosampler is provided with a needle, a measuring pump which sucks and discharges liquid through the needle, a movement mechanism for the needle, and an injection port which has a needle sealing surface. A sample liquid is sucked into the needle and then the sample liquid discharged with the tip of the needle pressed to the needle sealing surface. When cleaning the needle sealing surface, a cleaning liquid in within the injection port is sucked and then the cleaning liquid is discharged and sucked into the injection port at a position at which the tip of the needle does not make contact with the needle sealing surface. Alternatively, after the cleaning liquid is discharged into the injection port, the needle may be caused to perform an up and down motion such that the tip of the needle contacts the needle sealing surface and then is lifted.
摘要翻译：自动进样器具有针，通过针吸液排出的测量泵，针的移动机构和具有针密封面的注射口。将样品液体吸入针中，然后用针尖排出的样品液压到针密封表面。当清洁针头密封面时，吸入注射口内的清洗液体，然后将清洁液体排出并吸引到针头未与针密封面接触的位置处的注射口。或者，在将清洁液排出到注入口之后，可以使针进行上下运动，使得针的尖端接触针密封面，然后被提起。

9. 发明授权

US08164102B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08164102B2
公开(公告)日：2012-04-24
申请号：US11392764
申请日：2006-03-30
申请人： Chisato Furukawa , Takafumi Nakamura
发明人： Chisato Furukawa , Takafumi Nakamura
IPC分类号： H01L29/18
CPC分类号： H01L25/0753 , H01L24/32 , H01L33/44 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/8592 , H01L2224/92247 , H01L2924/181 , H01L2924/3025 , H01L2924/00 , H01L2924/00014
摘要： A semiconductor light emitting device may include a first lead; a second lead; a first semiconductor light emitting element mounted on the first lead, being configured to emit a light having an optical emission spectrum no more than 400 nm from a light extraction surface of the first semiconductor light emitting element; a second semiconductor light emitting element mounted on the second lead, being configured to emit a light having a peak wavelength in no less than 550 nm; an ultraviolet absorbing layer configured to cover the light extraction surface of the first semiconductor light emitting element; and a sealing resin configured to cover the ultraviolet absorbing layer, first semiconductor light emitting element and the second semiconductor light emitting element.
摘要翻译：半导体发光器件可以包括第一引线; 第二个领先; 安装在所述第一引线上的第一半导体发光元件被配置为从所述第一半导体发光元件的光提取表面发射具有不超过400nm的发光光谱的光; 安装在所述第二引线上的第二半导体发光元件，被配置为发射峰值波长在不小于550nm的光; 被配置为覆盖第一半导体发光元件的光提取表面的紫外线吸收层; 以及密封树脂，其被构造成覆盖紫外线吸收层，第一半导体发光元件和第二半导体发光元件。

10. 发明授权

US07635752B2 Ablated SLAM-Dependent Entry 有权
标题翻译：消除SLAM依赖性条目
公开(公告)号：US07635752B2
公开(公告)日：2009-12-22
申请号：US10512627
申请日：2003-05-02
申请人： Roberto Cattaneo , Sompong Vongpunsawad , Stephen J. Russell , Takafumi Nakamura
发明人： Roberto Cattaneo , Sompong Vongpunsawad , Stephen J. Russell , Takafumi Nakamura
IPC分类号： C07K14/12 , A61K39/00 , A61K39/165 , C12N7/00
CPC分类号： C07K14/005 , A61K38/00 , A61K48/00 , C07K2319/01 , C07K2319/30 , C07K2319/43 , C12N2760/18422 , C12N2760/18432 , C12N2760/18443
摘要： Control apparatus forcefully stops inverter and inverter when DC/DC converter is anomalously stopped. Additionally, when one of inverters is anomalously stopped while DC/DC converter is normal, control apparatus forcefully stops the other inverter. Then, when a recovery condition is satisfied after the other inverter is forcefully stopped, control apparatus recovers the other inverter.
摘要翻译：本发明提供含有核酸和/或多肽的核酸，多肽和病毒。本发明还提供了使用病毒治疗癌症患者的方法。具体地，本发明提供了编码病毒血凝素（H）多肽，病毒H多肽和含有核酸和/或H多肽的病毒的核酸分子。这样的病毒可用于治疗癌症患者而不引起免疫抑制。

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