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    • 9. 发明申请
    • PINHOLE-FREE DIELECTRIC THIN FILM FABRICATION
    • 无孔电介质薄膜制造
    • WO2012174260A3
    • 2013-04-25
    • PCT/US2012042487
    • 2012-06-14
    • APPLIED MATERIALS INCJIANG CHONGKWAK BYUNG SUNG LEO
    • JIANG CHONGKWAK BYUNG SUNG LEO
    • H01M14/00
    • C23C14/0676C23C14/08C23C14/5826C23C14/586
    • A method of depositing a dielectric thin film may include: depositing a thin layer of dielectric; stopping deposition of the dielectric layer, and modifying the gas in the chamber if desired; inducing and maintaining a plasma in the vicinity of the substrate to provide ion bombardment of the deposited layer of dielectric; and repeating the depositing, stopping and inducing and maintaining steps until a desired thickness of dielectric is deposited. A variation on this method may include, in place of the repeating step: depositing a thick layer of lower quality dielectric; depositing a thin layer of high quality dielectric; stopping deposition of the dielectric layer, and modifying the gas in the chamber if desired; and inducing and maintaining a plasma in the vicinity of the substrate to provide ion bombardment of the deposited layer of dielectric. The thick layer of dielectric may be deposited more rapidly than the thin layers.
    • 沉积电介质薄膜的方法可以包括:沉积介电薄层; 阻止介电层的沉积,如果需要则改变腔中的气体; 在衬底附近诱导和维持等离子体,以提供沉积的电介质层的离子轰击; 并重复沉积,停止和引导和维持步骤,直到沉积所需的电介质厚度。 该方法的变型可以包括:代替重复步骤:沉积较厚质量的电介质层; 沉积一层高质量的电介质; 阻止介电层的沉积,如果需要则改变腔中的气体; 以及在衬底附近诱导和维持等离子体,以提供沉积的电介质层的离子轰击。 电介质的厚层可以比薄层更快地沉积。