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1. 发明申请

WO2005027187A3 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：WO2005027187A3
公开(公告)日：2005-03-24
申请号：PCT/KR2004/002376
申请日：2004-09-16
申请人： SAMSUNG ELECTRONICS CO., LTD. , KIM, Sang-Gab , LEE, Je-Min , CHO, Kwan-Young , JEONG, Jong-Tae , SONG, In-Ho , CHOE, Hee-Hwan , KANG, Sung-Chul , KANG, Ho-Min , CHOI, Beohm-Rock , CHOI, Joon-Hoo
发明人： KIM, Sang-Gab , LEE, Je-Min , CHO, Kwan-Young , JEONG, Jong-Tae , SONG, In-Ho , CHOE, Hee-Hwan , KANG, Sung-Chul , KANG, Ho-Min , CHOI, Beohm-Rock , CHOI, Joon-Hoo
IPC分类号： G02F1/136
摘要： The present invention relates to a thin film transistor array panel, a liquid crystal display, and a manufacturing method of the same. A TFT array for a LCD or an EL display is used as a circuit board for driving the respective pixels in an independent manner. The present invention provides pixel electrodes and contact assistants, which connect expansions of gate lines and data lines to an external circuit, having a structure of double layers including IZO layer and ITO layer. The ITO layer is disposed on the IZO layer. In the present invention, the pixel electrodes are formed to have double layers of IZO layer and ITO layer to avoid wires from getting damage by the ITO etchant and to prevent prove pins from having accumulation of foreign body during the gross test. In the present invention, the contact assistants may only be formed to have double layers of IZO layer and ITO layer to prevent prove pins from having accumulation of foreign body during the gross test. Since the consumption of ITO is reduced, manufacturing cost decreases.

2. 发明申请

WO2005027187A2 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：WO2005027187A2
公开(公告)日：2005-03-24
申请号：PCT/KR2004002376
申请日：2004-09-16
申请人： SAMSUNG ELECTRONICS CO LTD , KIM SANG-GAB , LEE JE-MIN , CHO KWAN-YOUNG , JEONG JONG-TAE , SONG IN-HO , CHOE HEE-HWAN , KANG SUNG-CHUL , KANG HO-MIN , CHOI BEOHM-ROCK , CHOI JOON-HOO
发明人： KIM SANG-GAB , LEE JE-MIN , CHO KWAN-YOUNG , JEONG JONG-TAE , SONG IN-HO , CHOE HEE-HWAN , KANG SUNG-CHUL , KANG HO-MIN , CHOI BEOHM-ROCK , CHOI JOON-HOO
IPC分类号： G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1362 , H01L20060101 , H01L27/32 , H01L51/52 , H01L
CPC分类号： G02F1/13439 , G02F1/1345 , G02F1/136227 , G02F2001/13629 , H01L27/322 , H01L27/3244 , H01L27/3276 , H01L51/5215 , H01L2251/558
摘要： The present invention relates to a thin film transistor array panel, a liquid crystal display, and a manufacturing method of the same. A TFT array for a LCD or an EL display is used as a circuit board for driving the respective pixels in an independent manner. The present invention provides pixel electrodes and contact assistants, which connect expansions of gate lines and data lines to an external circuit, having a structure of double layers including IZO layer and ITO layer. The ITO layer is disposed on the IZO layer. In the present invention, the pixel electrodes are formed to have double layers of IZO layer and ITO layer to avoid wires from getting damage by the ITO etchant and to prevent prove pins from having accumulation of foreign body during the gross test. In the present invention, the contact assistants may only be formed to have double layers of IZO layer and ITO layer to prevent prove pins from having accumulation of foreign body during the gross test. Since the consumption of ITO is reduced, manufacturing cost decreases.
摘要翻译：本发明涉及薄膜晶体管阵列面板，液晶显示器及其制造方法。用于LCD或EL显示器的TFT阵列用作用于独立地驱动各个像素的电路板。本发明提供了将栅极线和数据线的扩展连接到外部电路的像素电极和接触辅助件，其具有包括IZO层和ITO层的双层结构。 ITO层设置在IZO层上。在本发明中，像素电极形成为具有双层IZO层和ITO层，以避免电线被ITO蚀刻剂损坏，并且防止在总体测试期间引脚不会积累异物。在本发明中，接触助剂只能形成为具有双层IZO层和ITO层，以防止在总体测试期间引脚不会积累异物。由于ITO的消耗减少，制造成本降低。

3. 发明申请

WO2003107394A3 ORGANIC ELECTROLUMINESCENT DEVICE 审中-公开
公开(公告)号：WO2003107394A3
公开(公告)日：2003-12-24
申请号：PCT/KR2002/002418
申请日：2002-12-24
申请人： SAMSUNG ELECTRONICS CO., LTD. , CHUNG, Jin-Koo , CHOI, Joon-Hoo , KIM, Sang-Gab , CHOE, Hee-Hwan , CHOI, Beom-Rak
发明人： CHUNG, Jin-Koo , CHOI, Joon-Hoo , KIM, Sang-Gab , CHOE, Hee-Hwan , CHOI, Beom-Rak
IPC分类号： H05B33/22
摘要： Disclosed is an organic electroluminescent (EL) device for enhancing the luminous efficiency. A first electrode is formed on a substrate. A CVD insulating film (128) of low dielectric constant having an opening (130) exposing the first electrode is formed on the first electrode and the substrate. An organic EL layer (132) and a second electrode (134) are sequentially stacked on the opening. A wall surrounding a region of the organic EL layer is formed of the CVD insulating film (128) of low dielectric constant, the surface treatment of the pixel electrode (126) can be performed using O2 plasma to thereby enhance luminance properties.

4. 发明申请

WO2003067320A1 LIQUID CRYSTAL DISPLAY AND METHOD FOR FABRICATING THE DISPLAY 审中-公开
标题翻译：液晶显示器和用于制作显示器的方法
公开(公告)号：WO2003067320A1
公开(公告)日：2003-08-14
申请号：PCT/KR2002/001390
申请日：2002-07-24
申请人： SAMSUNG ELECTRONICS CO. LTD. , SONG, Jang-Kun , KIM, Sang-Gab , LEE, Seung-Hee
发明人： SONG, Jang-Kun , KIM, Sang-Gab , LEE, Seung-Hee
IPC分类号： G02F1/136
CPC分类号： G02F1/136227 , G02F1/133371 , G02F1/133514
摘要： The present invention relates to a liquid crystal display and a fabricating method thereof. The cell gaps for the red, green and blue pixel areas are formed in a separate manner for correcting the color shift to enhance image quality. Openings for controlling the cell gaps are provided in the protective layer and the gate insulating layer and have a zigzag-shaped boundary. In this way, the light leakage near the boundary of the openings can be prevented.
摘要翻译：本发明涉及一种液晶显示器及其制造方法。红色，绿色和蓝色像素区域的单元格间隙以单独的方式形成，用于校正色彩偏移以增强图像质量。用于控制电池间隙的开口设置在保护层和栅极绝缘层中并且具有锯齿形边界。以这种方式，可以防止在开口边界附近的漏光。

5. 发明申请

WO2003036376A1 A THIN FILM TRANSISTOR SUBSTRATE OF USING INSULATING LAYERS HAVING LOW DIELECTRIC CONSTANT AND A METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：使用具有低介电常数的绝缘层的薄膜晶体管基板及其制造方法
公开(公告)号：WO2003036376A1
公开(公告)日：2003-05-01
申请号：PCT/KR2001/001896
申请日：2001-11-07
申请人： SAMSUNG ELECTRONICS CO., LTD. , HONG, Wan-Shick , CHOI, Joon-Hoo , KIM, Sang-Gab , JUNG, Kwan-Woo , CHUNG, Kyu-Ha
发明人： HONG, Wan-Shick , CHOI, Joon-Hoo , KIM, Sang-Gab , JUNG, Kwan-Woo , CHUNG, Kyu-Ha
IPC分类号： G02F1/136
CPC分类号： G02F1/136227 , G02F2001/133357 , G02F2001/136236 , G02F2202/42 , H01L27/12 , H01L27/124 , H01L27/1248 , H01L27/1288 , H01L29/458 , H01L29/4908 , H01L29/66765
摘要： A thin film transistor array substrate includes an insulating substrate, a gate line assembly formed on the substrate, and a data line assembly crossing over the gate line assembly while being insulated from the gate line assembly. Thin film transistor are connected to the gate line assembly, and the data line assembly. A passivation layer is formed on the thin film transistors with a-Si:C:O, or a-Si:O:F. The a-Si:C:O or a-Si:O:F-based layer is deposited through PECVD. Pixel electrodes are formed on the passivation layer while being connected to the thin film transistors. In this structure, the problem of parasitic capacitance is solved while enhancing the opening ratio, and reducing the processing time.
摘要翻译：薄膜晶体管阵列基板包括绝缘基板，形成在基板上的栅极线组件和跨越栅极线组件而与栅极线组件绝缘的数据线组件。薄膜晶体管连接到栅极线组件和数据线组件。在具有a-Si：C：O或a-Si：O：F的薄膜晶体管上形成钝化层。通过PECVD沉积a-Si：C：O或a-Si：O：F基层。像素电极形成在钝化层上，同时连接到薄膜晶体管。在这种结构中，在提高开口率的同时解决寄生电容的问题，并缩短处理时间。

6. 发明申请

WO2003107394A2 ORGANIC ELECTROLUMINESCENT DEVICE 审中-公开
标题翻译：有机电致发光器件
公开(公告)号：WO2003107394A2
公开(公告)日：2003-12-24
申请号：PCT/KR2002/002418
申请日：2002-12-24
申请人： SAMSUNG ELECTRONICS CO., LTD. , CHUNG, Jin-Koo , CHOI, Joon-Hoo , KIM, Sang-Gab , CHOE, Hee-Hwan , CHOI, Beom-Rak
发明人： CHUNG, Jin-Koo , CHOI, Joon-Hoo , KIM, Sang-Gab , CHOE, Hee-Hwan , CHOI, Beom-Rak
IPC分类号： H01L
CPC分类号： H01L27/3246 , H01L21/31633 , H01L27/3283 , H01L51/5206
摘要： Disclosed is an organic electroluminescent (EL) device for enhancing the luminous efficiency. A first electrode is formed on a substrate. A CVD insulating film of low dielectric constant having an opening exposing the first electrode is formed on the first electrode and the substrate. An organic EL layer and a second electrode are sequentially stacked on the opening. A wall surrounding a region of the organic EL layer is formed of the CVD insulating film of low dielectric constant, the surface treatment of the pixel electrode can be performed using O2 plasma to thereby enhance luminance properties.
摘要翻译：公开了一种用于提高发光效率的有机电致发光（EL）装置。在基板上形成第一电极。在第一电极和基板上形成具有露出第一电极的开口的低介电常数的CVD绝缘膜。有机EL层和第二电极依次堆叠在开口上。围绕有机EL层的区域的壁由低介电常数的CVD绝缘膜形成，可以使用O 2等离子体进行像素电极的表面处理，从而提高亮度特性。

7. 发明申请

WO2003060601A1 A WIRE FOR A DISPLAY DEVICE, A METHOD FOR MANUFACTURING THE SAME, A THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE WIRE, AND A METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：用于显示装置的线，其制造方法，包括线的薄膜晶体管阵列面板及其制造方法
公开(公告)号：WO2003060601A1
公开(公告)日：2003-07-24
申请号：PCT/KR2002/001434
申请日：2002-07-29
申请人： SAMSUNG ELECTRONICS CO., LTD. , YU, Seung-Hee , HONG, Mun-Pyo , RHO, Soo-Guy , ROH, Nam-Seok , SONG, Keun-Kyu , CHOE, Hee-Hwan , KIM, Bo-Sung , KIM, Sang-Gab , KANG, Sung-Chul , PARK, Hong-Sick
发明人： YU, Seung-Hee , HONG, Mun-Pyo , RHO, Soo-Guy , ROH, Nam-Seok , SONG, Keun-Kyu , CHOE, Hee-Hwan , KIM, Bo-Sung , KIM, Sang-Gab , KANG, Sung-Chul , PARK, Hong-Sick
IPC分类号： G02F1/136
CPC分类号： G02F1/136286 , G02F2001/136295
摘要： First, a Cr film and a CrOx film are deposited and patterned using an etchant including 8-12% Ce(NH 4 ) 2 (NO3) 6 , 10-20% NH 3 and remaining ultra pure water to form a gate wire including a plurality of gate lines, a plurality of gate electrodes and a plurality of gate pads. Next, a gate insulating film, a semiconductor layer and an ohmic contact layer are formed in sequence. A Cr film and CrOx film are deposited in sequence and patterned using an etchant including 8-12% Ce(NH 4 ) 2 (NO 3 ) 6 , 10-20% NH 3 and remaining ultra pure water to form a data wire including a plurality of data lines, a plurality of source electrodes, a plurality of drain electrodes and a plurality of data pads. A passivation layer is deposited and pattered to form a plurality of contact holes respectively exposing the drain electrodes, the gate pads and the data pads. A transparent conductive material or a reflective conductive material is deposited and patterned to form a plurality of pixel electrodes, a plurality of subsidiary gate pads and a plurality of subsidiary data pads electrically connected to the drain electrodes, the gate pads and the data pads, respectively. The gate lines and the data lines with low reflectance are used as a light-blocking film for blocking the light leakage between the pixel areas, and do not increase the black brightness. Accordingly, a separate black matrix need not be provided on the color filter panel, thereby securing both aperture ratio of the pixel and high contrast ratio.
摘要翻译：首先，使用包括8-12％Ce（NH 4）2（NO 3）6，10-20％NH 3和剩余的超纯水的蚀刻剂沉积和图案化Cr膜和CrOx膜，以形成包括多个栅极线，多个栅电极和多个栅极焊盘。接下来，依次形成栅极绝缘膜，半导体层和欧姆接触层。依次沉积Cr膜和CrOx膜，并使用包括8-12％Ce（NH 4）2（NO 3）6，10-20％NH 3和剩余的超纯水的蚀刻剂进行图案化以形成包括多个数据的数据线线，多个源电极，多个漏电极和多个数据焊盘。钝化层被沉积并图案化以形成分别暴露漏电极，栅极焊盘和数据焊盘的多个接触孔。沉积透明导电材料或反射导电材料以形成多个像素电极，分别与漏电极，栅极焊盘和数据焊盘电连接的多个辅助栅极焊盘和多个辅助数据焊盘。栅极线和低反射率的数据线被用作阻挡像素区域之间的漏光的遮光膜，并且不增加黑色亮度。因此，不需要在滤色器面板上设置单独的黑矩阵，从而确保像素的开口率和高对比度。

8. 发明申请

WO2003043094A1 CONTACT PORTION OF SEMICONDUCTOR DEVICE, AND THIN FILM TRANSISTOR ARRAY PANEL FOR DISPLAY DEVICE INCLUDING THE CONTACT PORTION 审中-公开
标题翻译：半导体器件的接触部分和用于包括接触部分的显示器件的薄膜晶体管阵列面板
公开(公告)号：WO2003043094A1
公开(公告)日：2003-05-22
申请号：PCT/KR2002/001878
申请日：2002-10-08
申请人： SAMSUNG ELECTRONICS CO., LTD. , KIM, Bo-Sung , JUNG, Kwan-Wook , HONG, Wan-Shick , KIM, Sang-Gab , HONG, Mun-Pyo
发明人： KIM, Bo-Sung , JUNG, Kwan-Wook , HONG, Wan-Shick , KIM, Sang-Gab , HONG, Mun-Pyo
IPC分类号： H01L29/786
CPC分类号： G02F1/13458 , G02F1/136227 , G02F1/136286 , H01L21/76802 , H01L21/76804 , H01L23/53295 , H01L27/12 , H01L27/1244 , H01L27/1248 , H01L2924/0002 , H01L2924/00
摘要： A gate wire is formed on a substrate. Next, after forming a gate insulating film, a semiconductor layer and an ohmic contact layer subsequently are formed thereon. Next, a data wire is formed. Next, a passivation layer and an organic insulating film are deposited, and patterned to form contact holes for exposing the drain electrode, the gate pad and the data pad, respectively. Here, the organic insulating film around the contact holes is formed thinner than that in the other portions. Next, the organic insulating film around the contact holes is removed by an ashing process to expose the borderline of the passivation layer in the contact holes, thereby removing an under-cut. Then, a pixel electrode, an assistant gate pad and an assistant data pad respectively connected to the drain electrode, the gate pad and the data pad are formed.
摘要翻译：在基板上形成栅极线。接下来，在形成栅极绝缘膜之后，随后在其上形成半导体层和欧姆接触层。接下来，形成数据线。接下来，沉积钝化层和有机绝缘膜，并图案化以形成用于分别暴露漏电极，栅极焊盘和数据焊盘的接触孔。这里，接触孔周围的有机绝缘膜的厚度比其他部分薄。接下来，通过灰化处理去除接触孔周围的有机绝缘膜，以暴露接触孔中的钝化层的边界线，从而去除下切。然后，形成分别连接到漏电极，栅极焊盘和数据焊盘的像素电极，辅助栅极焊盘和辅助数据焊盘。

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