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1. 发明申请

WO2014088670A1 METHOD AND APPARATUS FOR AUTONOMOUS IDENTIFICATION OF PARTICLE CONTAMINATION DUE TO ISOLATED PROCESS EVENTS AND SYSTEMATIC TRENDS 审中-公开
标题翻译：用于自动识别分离过程事件和系统趋势的颗粒污染的方法和装置
公开(公告)号：WO2014088670A1
公开(公告)日：2014-06-12
申请号：PCT/US2013/059722
申请日：2013-09-13
申请人： TOKYO ELECTRON LIMITED , KAUSHAL, Sanjeev
发明人： KAUSHAL, Sanjeev , WATERMAN, Aaron Archer , MOROZUMI, Yuichiro , OZAKI, Tetsushi , PATEL, Sukesh Janubhai
IPC分类号： G05B19/418
CPC分类号： G05B19/41875 , G05B2219/31336 , G05B2219/32368 , G05B2219/37224 , G06F17/3053 , G06N99/005 , H01L21/67288
摘要： A system and method for autonomously tracing a cause of particle contamination during semiconductor manufacture is provided. A contamination analysis system analyzes tool process logs together with particle contamination data for multiple process runs to determine a relationship between systematic particle contamination levels and one or more tool parameters. This relationship is used to predict expected contamination levels associated with regular usage of the tool, and to identify which tool parameters have the largest impact on expected levels of particle contamination. The contamination analysis system also identifies process logs showing unexpected deviant particle contamination levels that exceed expected contamination levels, and traces the cause of the deviant particle contamination to particular process log parameter events.
摘要翻译：提供了一种用于在半导体制造期间自主追踪颗粒污染原因的系统和方法。污染分析系统分析工具过程日志以及多个过程运行的颗粒污染数据，以确定系统性颗粒污染水平与一个或多个工具参数之间的关系。这种关系用于预测与工具的常规使用相关的预期污染水平，并确定哪些工具参数对颗粒污染的预期水平具有最大的影响。污染分析系统还识别显示出超出预期污染水平的意外偏差颗粒污染水平的过程记录，并追踪特定过程日志参数事件的异常颗粒污染的原因。

2. 发明申请

WO2008111991A3 SPINTRONIC TRANSISTOR 审中-公开
标题翻译：旋转晶体管
公开(公告)号：WO2008111991A3
公开(公告)日：2008-12-11
申请号：PCT/US2007073099
申请日：2007-07-10
申请人： TOKYO ELECTRON LTD , KAUSHAL SANJEEV , SUGISHIMA KENJI , GANGULY SWAROOP
发明人： KAUSHAL SANJEEV , SUGISHIMA KENJI , GANGULY SWAROOP
IPC分类号： H01L31/00
CPC分类号： H01L29/66984 , H01F10/16 , H01L29/1054
摘要： A semiconductor device Including: a substrate comprising silicon: a channel region formed on the substrate; a spin injector formed on the substrate at a first side of the channel region and configured to diffuse a spin-polarized current into the channel region; a spin detector formed on the substrate at a second side of the channel region and configured to receive said spin polarized current from the channel region; and a gate formed on the substrate in an area of said channel region,
摘要翻译：一种半导体器件包括：包括硅的衬底：形成在衬底上的沟道区; 旋转注入器，其形成在所述沟道区域的第一侧的所述衬底上并且被配置为将自旋极化电流扩散到所述沟道区域中; 自旋检测器，形成在所述沟道区的第二侧的所述衬底上，并被配置为从所述沟道区接收所述自旋极化电流; 以及在所述沟道区域的区域中形成在所述衬底上的栅极，

3. 发明申请

WO2007115084A1 MONITORING A SYSTEM DURING LOW-PRESSURE PROCESSES 审中-公开
标题翻译：在低压过程中监测系统
公开(公告)号：WO2007115084A1
公开(公告)日：2007-10-11
申请号：PCT/US2007/065483
申请日：2007-03-29
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , KAUSHAL, Sanjeev , PANDEY, Pradeep , SUGISHIMA, Kenji
发明人： KAUSHAL, Sanjeev , PANDEY, Pradeep , SUGISHIMA, Kenji
IPC分类号： G05B19/418 , G05B23/02
CPC分类号： G05B19/41875 , C23C16/52 , G05B23/0254 , G05B2219/37514 , G05B2219/37533 , G05B2219/45031 , Y02P90/22 , Y02P90/26
摘要： A method of monitoring a processing system (100, 200, 300) in real-time using low-pressure based modeling techniques that include processing one or more of wafers (W) in a processing chamber (50, 104, 202); determining a measured dynamic process response for a rate of change for a process parameter; executing a real-time dynamic model to generate a predicted dynamic process response; determining a dynamic estimation error using a difference between the predicted dynamic process response and the expected process response; and comparing the dynamic estimation error to operational limits.
摘要翻译：一种监视处理系统（100,200,300）的方法，用于实时使用基于低压的建模技术，其包括处理处理室（50,104,202）中的一个或多个晶片（W）; 确定针对过程参数的变化率的测量的动态过程响应; 执行实时动态模型以产生预测的动态过程响应; 使用预测的动态过程响应和预期过程响应之间的差来确定动态估计误差; 并将动态估计误差与运算极限进行比较。

4. 发明申请

WO2007030194A1 BUILT-IN SELF TEST FOR A THERMAL PROCESSING SYSTEM 审中-公开
标题翻译：用于热处理系统的内置自检
公开(公告)号：WO2007030194A1
公开(公告)日：2007-03-15
申请号：PCT/US2006/026220
申请日：2006-07-06
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , KAUSHAL, Sanjeev , PANDEY, Pradeep , SUGISHIMA, Kenji , DIP, Anthony , SMITH, David , JOE, Raymond , GANDHI, Sundar
发明人： KAUSHAL, Sanjeev , PANDEY, Pradeep , SUGISHIMA, Kenji , DIP, Anthony , SMITH, David , JOE, Raymond , GANDHI, Sundar
CPC分类号： H01L22/10 , G05B23/0254 , H01L21/67248
摘要： A method of monitoring a thermal processing system (100, 200) in real-time using a built-in self test (BIST) table that includes positioning a plurality of wafers (W) in a processing chamber (202) in the thermal processing system (100, 200); executing a real-time dynamic model (330) to generate a predicted dynamic process response for the processing chamber (202) during the processing time; creating a first measured dynamic process response; determining a dynamic estimation error using a difference between the predicted dynamic process response and the measured dynamic process response; and comparing the dynamic estimation error to operational thresholds established by one or more rules in the BiST table.
摘要翻译：一种使用内置自检（BIST）表实时监测热处理系统（100,200）的方法，其包括将多个晶片（W）定位在热处理系统中的处理室（202）中（100,200）; 执行实时动态模型（330）以在处理时间期间生成用于处理室（202）的预测动态过程响应; 创建第一个测量动态过程响应; 使用预测的动态过程响应和测量的动态过程响应之间的差来确定动态估计误差; 并将动态估计误差与由BiST表中的一个或多个规则建立的操作阈值进行比较。

5. 发明申请

WO2009114387A1 AUTONOMOUS BIOLOGICALLY BASED LEARNING TOOL 审中-公开
标题翻译：自主生物学的学习工具
公开(公告)号：WO2009114387A1
公开(公告)日：2009-09-17
申请号：PCT/US2009/036169
申请日：2009-03-05
申请人： TOKYO ELECTRON LIMITED , KAUSHAL, Sanjeev , PATEL, Sukesh Janubhai , SUGISHIMA, Kenji
发明人： KAUSHAL, Sanjeev , PATEL, Sukesh Janubhai , SUGISHIMA, Kenji
IPC分类号： G06F17/00
CPC分类号： G06N5/04 , G05B13/0265 , G06N5/02 , G06N99/005
摘要： Autonomous biologically based learning tool systems and methods that the tool systems employ for learning and analysis are provided. An autonomous biologically based learning tool system includes (a) one or more tool systems that perform a set of specific tasks or processes, and generate assets and data related to the assets that characterize the various processes and associated tool performance; (b) an interaction manager that receives and formats data, and (c) an autonomous learning system based on biological principles of learning, such system comprises a memory platform and a processing platform that are defined recursively and communicate through a network. Autonomous tool systems can be deployed recursively to assemble increasingly complex autonomous tools. Knowledge generated and accumulated in the autonomous learning system(s) associated with individual or assembled complex autonomous tools can be cast into semantic networks that can be employed for learning and driving tool goals based on context.
摘要翻译：提供了自动生物学的学习工具系统和工具系统用于学习和分析的方法。一种自主的基于生物学的学习工具系统包括（a）执行一组特定任务或过程的一个或多个工具系统，并生成与表征各种过程和相关工具性能的资产相关的资产和数据; （b）接收和格式化数据的交互管理器，以及（c）基于生物学习原理的自主学习系统，该系统包括递归定义并通过网络进行通信的存储器平台和处理平台。自动工具系统可以递归部署，以组合日益复杂的自主工具。在与个人或组装的复杂自主工具相关的自主学习系统中生成和积累的知识可以被投入到可以用于基于上下文学习和驱动工具目标的语义网络中。

6. 发明申请

WO2008111991A2 SPINTRONIC TRANSISTOR 审中-公开
标题翻译：自旋晶体管
公开(公告)号：WO2008111991A2
公开(公告)日：2008-09-18
申请号：PCT/US2007/073099
申请日：2007-07-10
申请人： TOKYO ELECTRON LIMITED , KAUSHAL, Sanjeev , SUGISHIMA, Kenji , GANGULY, Swaroop
发明人： KAUSHAL, Sanjeev , SUGISHIMA, Kenji , GANGULY, Swaroop
IPC分类号： H01L31/00
CPC分类号： H01L29/66984 , H01F10/16 , H01L29/1054
摘要： A semiconductor device Including: a substrate comprising silicon: a channel region formed on the substrate; a spin injector formed on the substrate at a first side of the channel region and configured to diffuse a spin-polarized current into the channel region; a spin detector formed on the substrate at a second side of the channel region and configured to receive said spin polarized current from the channel region; and a gate formed on the substrate in an area of said channel region,
摘要翻译：一种半导体器件，包括：包括硅的衬底：形成在衬底上的沟道区; 自旋注入器，在所述沟道区的第一侧处形成在所述衬底上，并被配置为将自旋极化电流扩散到所述沟道区中; 自旋检测器，所述自旋检测器在所述沟道区的第二侧处形成在所述衬底上并且被配置为从所述沟道区接收所述自旋极化电流; 以及在所述沟道区域的区域中的衬底上形成的栅极，

7. 发明申请

WO2007115136A1 MONITORING A MONOLAYER DEPOSITION (MLD) SYSTEM USING A BUILT-IN SELF TEST (BIST) TABLE 审中-公开
标题翻译：使用内置自检（BIST）表监测单层沉积（MLD）系统
公开(公告)号：WO2007115136A1
公开(公告)日：2007-10-11
申请号：PCT/US2007/065568
申请日：2007-03-30
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC , KAUSHAL, Sanjeev , PANDEY, Pradeep , SUGISHIMA, Kenji
发明人： KAUSHAL, Sanjeev , PANDEY, Pradeep , SUGISHIMA, Kenji
IPC分类号： G05B19/418 , G05B23/02
CPC分类号： G05B19/41875 , C23C16/45546 , C23C16/52 , G05B23/0254 , G05B2219/11 , G05B2219/1112 , G05B2219/37514 , G05B2219/37533 , G05B2219/45031 , Y02P90/14 , Y02P90/22 , Y02P90/26
摘要： A method of monitoring a processing system (100, 200, 300) in real-time using low-pressure based modeling techniques that include processing one or more of wafers (W) in a processing chamber (50, 104, 202); determining a measured dynamic process response for a rate of change for a process parameter; executing a real-time dynamic model to generate a predicted dynamic process response; determining a dynamic estimation error using a difference between the predicted dynamic process response and the expected process response; and comparing the dynamic estimation error to operational limits.
摘要翻译：一种监视处理系统（100,200,300）的方法，用于实时使用基于低压的建模技术，其包括处理处理室（50,104,202）中的一个或多个晶片（W）; 确定针对过程参数的变化率的测量的动态过程响应; 执行实时动态模型以产生预测的动态过程响应; 使用预测的动态过程响应和预期过程响应之间的差来确定动态估计误差; 并将动态估计误差与运算极限进行比较。

8. 发明申请

WO2006081023A2 METHOD AND APPARATUS FOR MONOLAYER DEPOSITION (MLD) 审中-公开
标题翻译：单层沉积方法和装置（MLD）
公开(公告)号：WO2006081023A2
公开(公告)日：2006-08-03
申请号：PCT/US2005/046495
申请日：2005-12-21
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , KAUSHAL, Sanjeev , PANDEY, Pradeep , SUGISHIMA, Kenji
发明人： KAUSHAL, Sanjeev , PANDEY, Pradeep , SUGISHIMA, Kenji
IPC分类号： C23C16/455 , C30B25/14 , C30B15/16 , C23C16/52
CPC分类号： C23C16/45527 , C23C16/52
摘要： An adaptive real time thermal processing system is presented that includes a multivariable controller. The method includes creating a dynamic model of the MLD processing system and incorporating virtual sensors in the dynamic model. The method includes using process recipes comprising intelligent set points, dynamic models, and/or virtual sensors.
摘要翻译：提出了一种包括多变量控制器的自适应实时热处理系统。该方法包括创建MLD处理系统的动态模型，并将虚拟传感器并入动态模型中。该方法包括使用包括智能设定点，动态模型和/或虚拟传感器的过程配方。

9. 发明申请

WO2006081020A1 METHOD AND APPARATUS FOR MONOLAYER DEPOSITION 审中-公开
标题翻译：用于单层沉积的方法和装置
公开(公告)号：WO2006081020A1
公开(公告)日：2006-08-03
申请号：PCT/US2005/046432
申请日：2005-12-19
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , KAUSHAL, Sanjeev , PANDEY, Pradeep , SUGISHMA, Kenji
发明人： KAUSHAL, Sanjeev , PANDEY, Pradeep , SUGISHMA, Kenji
IPC分类号： C23C16/455 , C23C16/52
CPC分类号： C23C16/45527 , C23C16/45546 , C23C16/45557 , C23C16/46 , C23C16/52
摘要： An adaptive real time thermal processing system is presented that includes a multivariable controller. The method includes creating a dynamic model of the MLD processing system and incorporating virtual sensors in the dynamic model. The method includes using process recipes comprising intelligent set points, dynamic models, and/or virtual sensors.
摘要翻译：提出了一种包括多变量控制器的自适应实时热处理系统。该方法包括创建MLD处理系统的动态模型，并将虚拟传感器并入动态模型中。该方法包括使用包括智能设定点，动态模型和/或虚拟传感器的过程配方。

10. 发明申请

WO2014074221A4 AUTONOMOUS TOOL PARAMETER IMPACT IDENTIFICATION FOR SEMICONDUCTOR MANUFACTURING 审中-公开
标题翻译：自动化工具半导体制造的参数影响鉴定
公开(公告)号：WO2014074221A4
公开(公告)日：2014-07-31
申请号：PCT/US2013059715
申请日：2013-09-13
申请人： TOKYO ELECTRON LTD , KAUSHAL SANJEEV
发明人： KAUSHAL SANJEEV , PATEL SUKESH JANUBHAI , POLAK WOLFGANG , WATERMAN AARON ARCHER , WOLFE ORION
IPC分类号： H01L21/02 , G06F19/00
CPC分类号： G05B19/41875 , G05B2219/32187 , G05B2219/45031 , G06N99/005 , Y02P90/22 , Y02P90/86
摘要： A system and method for autonomously determining the impact of respective tool parameters on tool performance in a semiconductor manufacturing system is provided. A parameter impact identification system receives tool parameter and tool performance data for one or more process runs of the semiconductor fabrication system and generates a separate function for each tool parameter characterizing the behavior of a tool performance indicator in terms of a single one of the tool parameters. Each function is then scored according to how well the function predicts the actual behavior of the tool performance indicator, or based on a determined sensitivity of the tool performance indicator to changes in the single tool parameter. The tool parameters are then ranked based on these scores, and a reduced set of critical tool parameters is derived based on the ranking. The tool performance indicator can then be modeled based on this reduced set of tool parameters.
摘要翻译：提供了一种用于在半导体制造系统中自主确定各个刀具参数对刀具性能的影响的系统和方法。参数冲击识别系统接收半导体制造系统的一个或多个过程运行的工具参数和工具性能数据，并且根据单个工具参数为每个刀具参数生成表征刀具性能指标行为的单独功能。然后根据功能预测刀具性能指标的实际行为，或者根据刀具性能指标对单刀具参数变化的确定灵敏度，对每个功能进行刻痕。然后根据这些分数对工具参数进行排名，并根据排名得出一组关键工具参数。然后，可以基于这组减少的刀具参数来建模刀具性能指标。

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