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    • 3. 发明授权
    • Electrical test system including coaxial cables
    • 电测试系统包括同轴电缆
    • US07538566B2
    • 2009-05-26
    • US11926172
    • 2007-10-29
    • Young-Soo AnSe-Jang OhJung-Hyun Nam
    • Young-Soo AnSe-Jang OhJung-Hyun Nam
    • G01R31/02G01R31/28
    • G01R31/2889
    • An electrical test system includes a test head, a performance board, a probe card and coaxial cables. The performance board includes a first side and an opposite second side, where the first side of the performance board is electrically connected to the test head and the second side of the performance board includes first coaxial cable connection portions. The probe card includes a first side and an opposite second side, where the first side of the probe card includes second coaxial cable connection portions and the second side includes a wafer test probes. The coaxial cables respectively electrically connect the first coaxial cable connection portions of the performance board to the second coaxial cable connection portions of the probe card.
    • 电气测试系统包括测试头,演奏板,探针卡和同轴电缆。 所述性能板包括第一侧和相对的第二侧,其中所述性能板的第一侧电连接到所述测试头,并且所述性能板的第二侧包括第一同轴电缆连接部分。 探针卡包括第一侧和相对的第二侧,其中探针卡的第一侧包括第二同轴电缆连接部分,并且第二侧包括晶片测试探针。 同轴电缆分别将性能板的第一同轴电缆连接部分电连接到探针卡的第二同轴电缆连接部分。
    • 5. 发明申请
    • CMOS image sensor including two types of device isolation regions and method of fabricating the same
    • CMOS图像传感器包括两种类型的器件隔离区及其制造方法
    • US20070004076A1
    • 2007-01-04
    • US11401716
    • 2006-04-11
    • Seok-Ha LeeJae-Seob RohJung-Hyun NamHee-Guen Jeong
    • Seok-Ha LeeJae-Seob RohJung-Hyun NamHee-Guen Jeong
    • H01L21/00H01L31/12
    • H01L27/14643H01L27/14603H01L27/1463H01L27/14689
    • Provided are a complementary metal oxide semiconductor (CMOS) image sensor including two types of device isolation regions and a method of fabricating the same. The CMOS image sensor includes a first active region of a semiconductor substrate in which a photodiode is formed; a second active region of the semiconductor substrate connected to a first side of the first active region; a first device isolation region of the semiconductor substrate comprising an insulating layer that surrounds the second active region and bounds the first side of the first active region and a second side of the first active region disposed opposite to the first side of the first active region; and a second device isolation region of the semiconductor substrate bounding at least two opposite sides of the first active region without contacting the second active region, wherein the second device isolation region is doped with impurities
    • 提供了包括两种类型的器件隔离区域的互补金属氧化物半导体(CMOS)图像传感器及其制造方法。 CMOS图像传感器包括其中形成光电二极管的半导体衬底的第一有源区; 所述半导体衬底的第二有源区连接到所述第一有源区的第一侧; 所述半导体衬底的第一器件隔离区域包括绝缘层,所述绝缘层围绕所述第二有源区并限制所述第一有源区的第一侧和所述第一有源区的与所述第一有源区的第一侧相对设置的第二侧; 以及限定所述第一有源区的至少两个相对侧而不接触所述第二有源区的所述半导体衬底的第二器件隔离区,其中所述第二器件隔离区掺杂有杂质
    • 6. 发明申请
    • CMOS Image Capture Device with Self-Correcting Gain Characteristic
    • 具有自校正增益特性的CMOS图像捕获器件
    • US20060290552A1
    • 2006-12-28
    • US11279141
    • 2006-04-10
    • Jae RohJung-hyun Nam
    • Jae RohJung-hyun Nam
    • H03M1/12
    • H03M1/181H03M1/56H04N5/3651H04N5/378
    • A CMOS image capture device includes an array of pixel elements configured to convert an image received as light at a surface thereof into analog output signals. An image processing circuit is also provided. The image processing circuit is configured to generate digital output signals from which the image can be recreated in response to the analog output signals. The image processing circuit has self-adjustable gain characteristics. The image processing circuit includes a ramp signal generator having an integration circuit therein with an adjustable RC time constant. The integration circuit includes an operational amplifier and a resistor array and/or a capacitor array electrically coupled to the operational amplifier. This resistor array and/or capacitor array enables the adjustable RC time constant.
    • CMOS图像捕获装置包括被配置为将在其表面处接收为光的图像转换为模拟输出信号的像素元件的阵列。 还提供了图像处理电路。 图像处理电路被配置为产生数字输出信号,响应于模拟输出信号,可以从其重新创建图像。 图像处理电路具有自调节增益特性。 图像处理电路包括其中具有可调节RC时间常数的积分电路的斜坡信号发生器。 积分电路包括运算放大器和电耦合到运算放大器的电阻器阵列和/或电容器阵列。 该电阻器阵列和/或电容器阵列使得可调RC时间常数。
    • 7. 发明申请
    • CMOS image sensor sharing readout circuits between adjacent pixels
    • CMOS图像传感器在相邻像素之间共享读出电路
    • US20060119715A1
    • 2006-06-08
    • US11291218
    • 2005-12-01
    • Jung-Hyun Nam
    • Jung-Hyun Nam
    • H04N9/04
    • H04N9/045H01L27/14603H01L27/14621H01L27/14641H01L27/14645H01L27/14689H04N5/37457
    • A CMOS image sensor includes first pairs of light-receiving elements sharing an output circuit and second pairs of light-receiving elements sharing an output circuit arranged in a first direction forming a first row and a second row respectively, wherein the first pairs include respective a first and a second light-receiving element and the second pairs include a third and a fourth light-receiving element. A plurality of the first rows and a plurality of second rows are interlaced, wherein color filters are formed on each of the first through the fourth light-receiving elements forming a color combination unit and the color filters of the same color are formed on respective light-receiving elements where charges generated in each of the respective light-receiving elements are transferred in the same direction. The pixel regions having color filters of the same color, are separated by a substantially uniform distance from one another.
    • CMOS图像传感器包括共享输出电路的第一对光接收元件和分别布置在形成第一行和第二行的第一方向上的输出电路的第二对光接收元件,其中第一对包括相应的a 第一和第二光接收元件,第二对包括第三和第四光接收元件。 多个第一行和多个第二行是交错的,其中在形成颜色组合单元的第一至第四光接收元件中的每一个上形成滤色器,并且在相应的光上形成相同颜色的滤色器 其中在各个光接收元件中产生的电荷在相同方向上传送。 具有相同颜色的滤色器的像素区域彼此间隔大致相等。