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1. 发明授权

US06835507B2 Mask for use in measuring flare, method of manufacturing the mask, method of identifying flare-affected region on wafer, and method of designing new mask to correct for flare 有权
标题翻译：用于测量火炬的掩模，制造掩模的方法，识别晶片上的闪光影响区域的方法以及设计新的掩模以校正闪光的方法
公开(公告)号：US06835507B2
公开(公告)日：2004-12-28
申请号：US10211359
申请日：2002-08-05
申请人： Won-Tai Ki , Seong-Woon Choi , Tae-Moon Jeong , Shun-Yong Zinn , Woo-Sung Han , Jung-Min Sohn
发明人： Won-Tai Ki , Seong-Woon Choi , Tae-Moon Jeong , Shun-Yong Zinn , Woo-Sung Han , Jung-Min Sohn
IPC分类号： G03F900
CPC分类号： G03F7/70591 , G03F1/44 , G03F1/70 , G03F7/70941
摘要： A mask for use in measuring flare produced by a projection lens of a photolithography system, a method of manufacturing the mask, a method of identifying a flare-affected region on a wafer, and a method for correcting for the flare to produce photoresist patterns of desired line widths are provided. A first photolithographic process is performed to form photoresist patterns on a test wafer using a mask including a light shielding region having a plurality of light transmission patterns and a light transmission region, and the photoresist patterns formed by light passing through the light transmission patterns of the light shielding region are compared to the photoresist patterns formed by light passing through the light transmission region. The amount of flare produced by the projection lens is quantified using the results of the comparison, and thus it is possible to identify a flare-affected region on the wafer. In addition, it is possible to form uniform photoresist patterns on the wafer by determining the open ratio of the flare-affected region and calculating an effective amount of the flare in the flare-affected region from the amount of flare of the lens and the open ratio. More specifically, a mask is produced in which the line widths of mask patterns are configured, i.e., corrected compared to the first mask, taking into consideration the effective amount of the flare.
摘要翻译：用于测量由光刻系统的投影透镜产生的闪光的掩模，掩模的制造方法，识别晶片上的火炬区域的方法，以及用于校正光斑以产生光致抗蚀剂图案的方法提供所需的线宽。执行第一光刻工艺以使用包括具有多个透光图案和光透射区域的遮光区域的掩模在测试晶片上形成光致抗蚀剂图案，并且由穿过光传输图案的光形成的光致抗蚀剂图案将光屏蔽区域与通过光透射区域的光形成的光致抗蚀剂图案进行比较。使用比较结果来量化由投影透镜产生的闪光量，因此可以识别晶片上的闪光影响区域。此外，可以通过确定闪光影响区域的开放比率并且从透镜的闪光量和开口的量来计算火炬影响区域中的闪光的有效量，从而在晶片上形成均匀的光致抗蚀剂图案比。更具体地，考虑到闪光灯的有效量，产生掩模图案的线宽被配置的掩模，即与第一掩模相比校正的掩模。

2. 发明授权

US07393615B2 Mask for use in measuring flare, method of manufacturing the mask, method of identifying flare-affected region on wafer, and method of designing new mask to correct for flare 有权
标题翻译：用于测量火炬的掩模，制造掩模的方法，识别晶片上的闪光影响区域的方法以及设计新的掩模以校正闪光的方法
公开(公告)号：US07393615B2
公开(公告)日：2008-07-01
申请号：US10974950
申请日：2004-10-28
申请人： Won-Tai Ki , Seong-Woon Choi , Tae-Moon Jeong , Shun-Yong Zinn , Woo-Sung Han , Jung-Min Sohn
发明人： Won-Tai Ki , Seong-Woon Choi , Tae-Moon Jeong , Shun-Yong Zinn , Woo-Sung Han , Jung-Min Sohn
IPC分类号： G03F1/00 , G06F17/21
CPC分类号： G03F7/70591 , G03F1/44 , G03F1/70 , G03F7/70941
摘要： A mask for use in measuring flare produced by a projection lens of a photolithography system, a method of manufacturing the mask, a method of identifying a flare-affected region on a wafer, and a method for correcting for the flare to produce photoresist patterns of desired line widths are provided. A first photolithographic process is performed to form photoresist patterns on a test wafer using a mask including a light shielding region having a plurality of light transmission patterns and a light transmission region, and the photoresist patterns formed by light passing through the light transmission patterns of the light shielding region are compared to the photoresist patterns formed by light passing through the light transmission region. The amount of flare produced by the projection lens is quantified using the results of the comparison, and thus it is possible to identify a flare-affected region on the wafer. In addition, it is possible to form uniform photoresist patterns on the wafer by determining the open ratio of the flare-affected region and calculating an effective amount of the flare in the flare-affected region from the amount of flare of the lens and the open ratio. More specifically, a mask is produced in which the line widths of mask patterns are configured, i.e., corrected compared to the first mask, taking into consideration the effective amount of the flare.
摘要翻译：用于测量由光刻系统的投影透镜产生的闪光的掩模，掩模的制造方法，识别晶片上的火炬区域的方法，以及用于校正光斑以产生光致抗蚀剂图案的方法提供所需的线宽。执行第一光刻工艺以使用包括具有多个透光图案和光透射区域的遮光区域的掩模在测试晶片上形成光致抗蚀剂图案，并且由穿过光传输图案的光形成的光致抗蚀剂图案将光屏蔽区域与通过光透射区域的光形成的光致抗蚀剂图案进行比较。使用比较结果来量化由投影透镜产生的闪光量，因此可以识别晶片上的闪光影响区域。此外，可以通过确定闪光影响区域的开放比率并且从透镜的闪光量和开口的量来计算火炬影响区域中的闪光的有效量，从而在晶片上形成均匀的光致抗蚀剂图案比。更具体地，考虑到闪光灯的有效量，产生掩模图案的线宽被配置的掩模，即与第一掩模相比校正的掩模。

3. 发明申请

US20050083518A1 Mask for use in measuring flare, method of manufacturing the mask, method of identifying flare-affected region on wafer, and method of designing new mask to correct for flare 有权
标题翻译：用于测量火炬的掩模，制造掩模的方法，识别晶片上的闪光影响区域的方法以及设计新的掩模以校正闪光的方法
公开(公告)号：US20050083518A1
公开(公告)日：2005-04-21
申请号：US10974950
申请日：2004-10-28
申请人： Won-Tai Ki , Seong-Woon Choi , Tae-Moon Jeong , Shun-Yong Zinn , Woo-Sung Han , Jung-Min Sohn
发明人： Won-Tai Ki , Seong-Woon Choi , Tae-Moon Jeong , Shun-Yong Zinn , Woo-Sung Han , Jung-Min Sohn
IPC分类号： G03F1/14 , G03F7/20 , G01N21/00
CPC分类号： G03F7/70591 , G03F1/44 , G03F1/70 , G03F7/70941
摘要： A mask for use in measuring flare produced by a projection lens of a photolithography system, a method of manufacturing the mask, a method of identifying a flare-affected region on a wafer, and a method for correcting for the flare to produce photoresist patterns of desired line widths are provided. A first photolithographic process is performed to form photoresist patterns on a test wafer using a mask including a light shielding region having a plurality of light transmission patterns and a light transmission region, and the photoresist patterns formed by light passing through the light transmission patterns of the light shielding region are compared to the photoresist patterns formed by light passing through the light transmission region. The amount of flare produced by the projection lens is quantified using the results of the comparison, and thus it is possible to identify a flare-affected region on the wafer. In addition, it is possible to form uniform photoresist patterns on the wafer by determining the open ratio of the flare-affected region and calculating an effective amount of the flare in the flare-affected region from the amount of flare of the lens and the open ratio. More specifically, a mask is produced in which the line widths of mask patterns are configured, i.e., corrected compared to the first mask, taking into consideration the effective amount of the flare.
摘要翻译：用于测量由光刻系统的投影透镜产生的闪光的掩模，掩模的制造方法，识别晶片上的火炬区域的方法，以及用于校正光斑以产生光致抗蚀剂图案的方法提供所需的线宽。执行第一光刻工艺以使用包括具有多个透光图案和光透射区域的遮光区域的掩模在测试晶片上形成光致抗蚀剂图案，并且由穿过光传输图案的光形成的光致抗蚀剂图案将光屏蔽区域与通过光透射区域的光形成的光致抗蚀剂图案进行比较。使用比较结果来量化由投影透镜产生的闪光量，因此可以识别晶片上的闪光影响区域。此外，可以通过确定闪光影响区域的开放比率并且从透镜的闪光量和开口的量来计算火炬影响区域中的闪光的有效量，从而在晶片上形成均匀的光致抗蚀剂图案比。更具体地，考虑到闪光灯的有效量，产生掩模图案的线宽被配置的掩模，即与第一掩模相比校正的掩模。

4. 发明授权

US06866968B2 Photomask for off-axis illumination and method of fabricating the same 有权
标题翻译：用于离轴照明的光掩模及其制造方法
公开(公告)号：US06866968B2
公开(公告)日：2005-03-15
申请号：US10216925
申请日：2002-08-13
申请人： In-Kyun Shin , Jung-min Sohn , Hee-sun Yoon , Seong-woon Choi
发明人： In-Kyun Shin , Jung-min Sohn , Hee-sun Yoon , Seong-woon Choi
IPC分类号： G03F1/26 , G03F1/68 , G03F1/76 , G03F1/78 , G03F1/80 , G03F7/20 , H01L21/027 , G03F9/00
CPC分类号： G03F7/70125 , G03F1/34 , G03F1/50
摘要： A photomask that is capable of implementing off-axis illumination (OAI), and a method of fabricating the same, are provided. The photomask includes a transparent substrate, a plurality of opaque patterns formed on the front surface of the transparent substrate, for defining a floodlighting portion for forming patterns, and a plurality of phase gratings formed on the back surface of the transparent substrate, allowing off-axis illumination (OAI) of an incident light source beyond the OAI limit of exposure equipment, allowing use in the outmost region of an aperture, and allowing modified illumination having a shape suitable for the layout of the opaque patterns.
摘要翻译：提供能够实现离轴照明（OAI）的光掩模及其制造方法。光掩模包括透明基板，形成在透明基板的前表面上的多个不透明图案，用于限定用于形成图案的泛光部分，以及形成在透明基板的背面上的多个相位光栅，入射光源的轴向照明（OAI）超过曝光设备的OAI限制，允许在孔的最外部区域使用，并允许具有适于布局不透明图案的形状的改进的照明。

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