发明申请
US20110193147A1 BACKSIDE ILLUMINATION CMOS IMAGE SENSORS AND METHODS OF MANUFACTURING THE SAME
有权
基本信息:
- 专利标题： BACKSIDE ILLUMINATION CMOS IMAGE SENSORS AND METHODS OF MANUFACTURING THE SAME
- 专利标题（中）：背景照明CMOS图像传感器及其制造方法
- 申请号：US12984404 申请日：2011-01-04
- 公开(公告)号：US20110193147A1 公开(公告)日：2011-08-11
- 发明人： Jung-Chak Ahn , Kyung-ho Lee
- 申请人： Jung-Chak Ahn , Kyung-ho Lee
- 优先权： KR10-2010-0011180 20100205
- 主分类号： H01L31/0232
- IPC分类号： H01L31/0232 ; H01L31/18
摘要：
Backside illumination CMOS image sensors having convex light-receiving faces and methods of manufacturing the same. A backside illumination CMOS image sensor includes a metal layer, an insulating layer and a photodiode. The insulating layer is on the metal layer. The photodiode is on the insulating layer, and a top face of the photodiode, which receives light, is curved. A method of manufacturing a backside illumination CMOS image sensor including a photodiode having a convex surface includes forming an island smaller than the photodiode on a portion of a light-receiving face of the photodiode, and annealing the island to form the photodiode having the convex light-receiving face.
摘要（中）：
具有凸形光接收面的背面照明CMOS图像传感器及其制造方法。 背面照明CMOS图像传感器包括金属层，绝缘层和光电二极管。 绝缘层位于金属层上。 光电二极管在绝缘层上，并且接收光的光电二极管的顶面是弯曲的。 包括具有凸表面的光电二极管的背面照明CMOS图像传感器的制造方法包括在光电二极管的受光面的一部分上形成小于光电二极管的岛，并退火该岛以形成具有凸光的光电二极管 接受面孔