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    • 1. 发明授权
    • Method for fabricating a sealed-cavity microstructure
    • 用于制造密封腔微结构的方法
    • US06596117B2
    • 2003-07-22
    • US09836785
    • 2001-04-17
    • Kenneth Maxwell HaysAlan Glenn BisignanoEugene Timothy Fitzgibbons
    • Kenneth Maxwell HaysAlan Glenn BisignanoEugene Timothy Fitzgibbons
    • H01L300
    • B81C1/00269G01J5/04G01J5/045G01J5/20Y10T156/1054
    • The present invention provides a sealed-cavity miscrostructure and an associated method for manufacturing the microstructure. Specifically, the microstructure of the present invention includes first and second wafers that are positioned relative to one another so as to form a cavity between the wafers. The microstructure further includes a seal between the first and second wafers and surrounding the cavity to create a pressure seal for the cavity. This seal allows the cavity of the microstructure to be maintained at a predetermined pressure different from that of the atmosphere outside the cavity. Importantly, the microstructure of the present invention further includes a structrual bond between the first and second wafers that structurally intergrates the first and second wafers. The structural bond renders the microstructure more rugged such that the microstructure can withstand expansion, vibrational, and shock stresses experienced by the microstructure during subsequent manufacturing and use. In one additional embodiment, the microstructure is a microbolometer that includes in addition to the seal and structural bond, a radiation detector suspended in the cavity.
    • 本发明提供一种用于制造微结构的密封腔结构和相关联的方法。 具体地,本发明的微结构包括相对于彼此定位的第一和第二晶片,以便在晶片之间形成空腔。 所述微结构进一步包括在所述第一和第二晶片之间的密封并围绕所述空腔以形成所述空腔的压力密封。 该密封件允许微结构的空腔保持在与空腔外部的气氛不同的预定压力。 重要的是,本发明的微结构进一步包括在第一和第二晶片之间的结构性结合,其结构地将第一和第二晶片结合在一起。 结构粘结使得微结构更加坚固,使得微结构可以承受随后的制造和使用期间微观结构经历的膨胀,振动和冲击应力。 在一个另外的实施例中,微结构是除了密封和结构结合之外还包括悬挂在空腔中的辐射探测器的微测热计。
    • 2. 发明授权
    • Self-aligned bump bond infrared focal plane array architecture
    • 自对准凸点键红外焦平面阵列架构
    • US06359290B1
    • 2002-03-19
    • US08595901
    • 1996-02-06
    • John C. Ehmke
    • John C. Ehmke
    • H01L300
    • H01L24/32H01L21/6835H01L24/82H01L24/90H01L27/1465H01L2221/68354H01L2224/13019H01L2224/24051H01L2224/24998H01L2224/81192H01L2224/82007H01L2924/01005H01L2924/01006H01L2924/01019H01L2924/01033H01L2924/01042H01L2924/0105H01L2924/01074H01L2924/01079H01L2924/14
    • A method of making a diode and the diode wherein there is provided a substrate of p-type group II-VI semiconductor material and an electrically conductive material capable of forming an ohmic contact with the substrate is forced into the lattice of the substrate to create an n-type region in the substrate in contact with the material and forming an electrical contact to the p-type region of said substrate. The substrate is preferably HgCdTe and the electrically conductive material is preferably tungsten or tin coated tungsten or tungsten coated with a mercury amalgam. Also a method of making an infrared focal plane array and the array wherein there is provided a semiconductor integrated circuit having electrically conductive pads on a surface thereof, forming bumps of an electrically conductive material on predetermined ones of the pads, providing a substrate of p-type group II-VI semiconductor material, disposing a layer of bonding material over one of the surface of the integrated circuit containing the pads or a surface of the substrate, forcing the bumps into the lattice of the substrate to create an n-type region in the substrate in contact with the material, bonding the substrate to the integrated circuit and forming an electrical connection between the p-type region of the substrate and one of the pads. The process is otherwise the same as the diode fabrication.
    • 制备二极管和二极管的方法,其中提供了p型II-VI族半导体材料的衬底和能够与衬底形成欧姆接触的导电材料,被迫进入衬底的晶格,以形成 所述衬底中的所述n型区域与所述材料接触并形成与所述衬底的p型区域的电接触。 基底优选为HgCdTe,并且导电材料优选为涂覆有汞齐汞的钨或锡涂覆的钨或钨。 还有一种制造红外焦平面阵列的方法,其中提供了一种在其表面上具有导电焊盘的半导体集成电路,在预定焊盘上形成导电材料的凸块,提供p- 型II-VI族半导体材料,在包含焊盘或基板的表面的集成电路的表面之一上设置接合材料层,迫使凸块进入基板的晶格以形成n型区域 所述基板与所述材料接触,将所述基板接合到所述集成电路并且在所述基板的所述p型区域和所述焊盘中的一个之间形成电连接。 该过程在另外与二极管制造相同。