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1. 发明申请

US20130299774A1 LIGHT-EMITTING DIODE DEVICE AND A METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：发光二极管装置及其制造方法
公开(公告)号：US20130299774A1
公开(公告)日：2013-11-14
申请号：US13618113
申请日：2012-09-14
申请人： Yi-An Lu , Jinn Kong Sheu , Ya-Hsuan Shih
发明人： Yi-An Lu , Jinn Kong Sheu , Ya-Hsuan Shih
IPC分类号： H01L33/04
CPC分类号： H01L27/15 , H01L33/04 , H01L33/62 , H01L2224/48091 , H01L2924/00014
摘要： A light-emitting diode (LED) device includes at least one LED unit, each including a substrate; an electrical coupling layer deposited above the substrate; a parallel-connected epitaxial structure deposited above the electrical coupling layer; and an intermediate layer deposited between the electrical coupling layer and the parallel-connected epitaxial structure. In another embodiment, the parallel-connected epitaxial structure is deposited above a conductive layer; the electrical coupling layer is deposited above the parallel-connected epitaxial structure; and the intermediate layer is deposited between the parallel-connected epitaxial structure and the electrical coupling layer.
摘要翻译：发光二极管（LED）装置包括至少一个LED单元，每个LED单元包括基板; 沉积在衬底上方的电耦合层; 沉积在电耦合层上方的并联连接的外延结构; 以及沉积在电耦合层和并联连接的外延结构之间的中间层。在另一个实施例中，并联连接的外延结构沉积在导电层上方; 电耦合层沉积在并联连接的外延结构之上; 并且中间层沉积在并联连接的外延结构和电耦合层之间。

2. 发明申请

US20130221321A1 LIGHT-EMITTING DIODE DEVICE 审中-公开
标题翻译：发光二极管装置
公开(公告)号：US20130221321A1
公开(公告)日：2013-08-29
申请号：US13464656
申请日：2012-05-04
申请人： Jinn Kong Sheu , Chih-Yuan Chang , Heng Liu , Wei-Chih Lai
发明人： Jinn Kong Sheu , Chih-Yuan Chang , Heng Liu , Wei-Chih Lai
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L25/0753 , H01L33/08 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting diode (LED) device includes a first LED, a second LED, and a superlattice structure by which the first and the second LEDs are stacked. The superlattice structure has an absorption spectra, the first active layer of the first LED has a first emission spectra, and the second active layer of the second LED has a second emission spectra. The absorption spectra is located on a shorter-wavelength side of at least one of the first and the second emission spectra.
摘要翻译：发光二极管（LED）装置包括第一LED，第二LED以及堆叠第一和第二LED的超晶格结构。超晶格结构具有吸收光谱，第一LED的第一有源层具有第一发射光谱，第二LED的第二有源层具有第二发射光谱。吸收光谱位于第一和第二发射光谱中的至少一个的较短波长侧。

3. 发明申请

US20100072487A1 LIGHT EMITTING DIODE, PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：发光二极管，封装结构及其制造方法
公开(公告)号：US20100072487A1
公开(公告)日：2010-03-25
申请号：US12419299
申请日：2009-04-07
申请人： Yao-Jun Tsai , Jinn-Kong Sheu , Hsi-Hsuan Yen , Hung-Lieh Hu
发明人： Yao-Jun Tsai , Jinn-Kong Sheu , Hsi-Hsuan Yen , Hung-Lieh Hu
IPC分类号： H01L33/00 , H01L21/02
CPC分类号： H01L33/14 , H01L33/38 , H01L33/382
摘要： A light emitting diode (LED), a fabricating method thereof, and a package structure thereof are provided. The LED includes a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer, a current distribution modifying pattern, a first electrode and a second electrode. The active layer and the second semiconductor layer form a mesa structure and expose a part of the first semiconductor layer. The current distribution modifying pattern is disposed on the second semiconductor layer. The first electrode is disposed on and electrically connected to the first semiconductor layer exposed by the mesa structure. The second electrode is disposed on the current distribution modifying pattern and is electrically connected to the second semiconductor layer. The LED has superior light emitting efficiency.
摘要翻译：提供一种发光二极管（LED）及其制造方法及其封装结构。 LED包括基板，设置在基板上的第一半导体层，设置在第一半导体层上的有源层，设置在有源层上的第二半导体层，电流分布修改图案，第一电极和第二电极。有源层和第二半导体层形成台面结构并暴露第一半导体层的一部分。电流分布修改图案设置在第二半导体层上。第一电极设置在由台面结构暴露的第一半导体层上并与其电连接。第二电极设置在电流分布修改图案上并且电连接到第二半导体层。 LED具有出色的发光效率。

4. 发明申请

US20070165414A1 LIGHT-EMITTING DIODE PACKAGE STRUCTURE 审中-公开
标题翻译：发光二极管封装结构
公开(公告)号：US20070165414A1
公开(公告)日：2007-07-19
申请号：US11682165
申请日：2007-03-05
申请人： Shih-Chang Shei , Jinn-Kong Sheu
发明人： Shih-Chang Shei , Jinn-Kong Sheu
IPC分类号： F21V15/00
CPC分类号： H01L33/62 , H01L25/167 , H01L33/60 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2924/01004 , H01L2924/01079 , H01L2924/12041 , H01L2924/3025 , H01L2224/05599
摘要： A light-emitting diode package structure is provided. The light-emitting diode package comprises an insulating sub-mount, a first patterned conductive-reflective film, a second patterned conductive-reflective film and a light-emitting diode chip. The insulating sub-mount has a first surface and a cavity therein. The first and the second patterned conductive-reflective film are set over a portion of the first surface, a portion of the sidewalls of the cavity and a portion of the bottom surface of the cavity. The light-emitting diode chip is set up inside the cavity of the insulating sub-mount. The light-emitting diode has a pair of electrodes. The electrodes are electrically connected to the first and the second patterned conductive-reflective film respectively. Since the light-emitting diode structure of this invention incorporates the patterned conductive-reflective films, efficiency of the light-emitting diode is increased.
摘要翻译：提供了一种发光二极管封装结构。发光二极管封装包括绝缘子安装座，第一图案化导电反射膜，第二图案化导电反射膜和发光二极管芯片。绝缘子安装座在其中具有第一表面和空腔。第一和第二图案化的导电反射膜设置在第一表面的一部分，空腔的侧壁的一部分和空腔的底表面的一部分上。发光二极管芯片设置在绝缘子安装座的腔内。发光二极管具有一对电极。电极分别电连接到第一和第二图案化导电反射膜。由于本发明的发光二极管结构具有图案化的导电反射膜，所以发光二极管的效率提高。

5. 发明授权

US07151281B2 Light-emitting diode structure with electrostatic discharge protection 失效
标题翻译：发光二极管结构具有静电放电保护功能
公开(公告)号：US07151281B2
公开(公告)日：2006-12-19
申请号：US10711531
申请日：2004-09-24
申请人： Shih-Chang Shei , Jinn-Kong Sheu
发明人： Shih-Chang Shei , Jinn-Kong Sheu
IPC分类号： H01L27/15 , H01L29/16
CPC分类号： H01L27/15 , H01L23/62 , H01L25/167 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting diode (LED) structure with electrostatic discharge (ESD) protection is described. The LED includes a substrate, a patterned semiconductor layer, a first electrode and a second electrode. The patterned semiconductor layer is disposed over the substrate, and is divided into at least a first island structure and a second island structure. The first electrode and the second electrode are connected between the first island structure and the second island structure. A shunt diode is formed by the first electrode, the second electrode and the second island structure. The shunt diode is connected in parallel to the LED with an inverse voltage compared to the LED. In the LED structure of the invention, the first island structure and the second island structure are manufactured simultaneously by the epitaxy procedure. Therefore, the LED could be protected from damage due to electrostatic discharge (ESD).
摘要翻译：描述了具有静电放电（ESD）保护的发光二极管（LED）结构。 LED包括衬底，图案化半导体层，第一电极和第二电极。图案化半导体层设置在衬底上，并且被划分为至少第一岛结构和第二岛结构。第一电极和第二电极连接在第一岛结构和第二岛结构之间。并联二极管由第一电极，第二电极和第二岛结构形成。与LED相比，并联二极管与LED并联连接，反向电压。在本发明的LED结构中，通过外延法同时制造第一岛结构和第二岛结构。因此，可以防止LED由于静电放电（ESD）而受到损坏。

6. 发明申请

US20050167680A1 LIGHT-EMITTING DIODE STRUCTURE WITH ELECTROSTATIC DISCHARGE PROTECTION 失效
标题翻译：具有静电放电保护功能的发光二极管结构
公开(公告)号：US20050167680A1
公开(公告)日：2005-08-04
申请号：US10711531
申请日：2004-09-24
申请人： Shih-Chang Shei , Jinn-Kong Sheu
发明人： Shih-Chang Shei , Jinn-Kong Sheu
IPC分类号： H01L25/16 , H01L27/15 , H01L33/00
CPC分类号： H01L27/15 , H01L23/62 , H01L25/167 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting diode (LED) structure with electrostatic discharge (ESD) protection is described. The LED includes a substrate, a patterned semiconductor layer, a first electrode and a second electrode. The patterned semiconductor layer is disposed over the substrate, and is divided into at least a first island structure and a second island structure. The first electrode and the second electrode are connected between the first island structure and the second island structure. A shunt diode is formed by the first electrode, the second electrode and the second island structure. The shunt diode is connected in parallel to the LED with an inverse voltage compared to the LED. In the LED structure of the invention, the first island structure and the second island structure are manufactured simultaneously by the epitaxy procedure. Therefore, the LED could be protected from damage due to electrostatic discharge (ESD).
摘要翻译：描述了具有静电放电（ESD）保护的发光二极管（LED）结构。 LED包括衬底，图案化半导体层，第一电极和第二电极。图案化半导体层设置在衬底上，并且被划分为至少第一岛结构和第二岛结构。第一电极和第二电极连接在第一岛结构和第二岛结构之间。并联二极管由第一电极，第二电极和第二岛结构形成。与LED相比，并联二极管与LED并联连接，反向电压。在本发明的LED结构中，通过外延法同时制造第一岛结构和第二岛结构。因此，可以防止LED由于静电放电（ESD）而受到损坏。

7. 发明授权

US06686610B2 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US06686610B2
公开(公告)日：2004-02-03
申请号：US10063053
申请日：2002-03-15
申请人： Jinn-Kong Sheu
发明人： Jinn-Kong Sheu
IPC分类号： H01L2906
CPC分类号： H01L33/32 , H01L33/04 , H01L33/14
摘要： A light emitting diode structure is formed on a substrate. A nucleation layer at low temperature is formed on the substrate. A buffer layer is formed on the nucleation layer for easing the subsequent formation of crystal growth. N active layer is disposed between an upper confinement layer and a lower confinement layer. The active layer include the semiconductor material doped with III-N elements. A contact layer is disposed on the upper confinement layer. A reversed tunneling layer is form on the contact layer, wherein the conductive types for both are different. A transparent layer is formed on the reversed tunneling layer. A cathode electrode contacts with the conductive buffer layer and is separated from the active layer and the transparent electrode.
摘要翻译：在基板上形成发光二极管结构。在基板上形成低温成核层。在成核层上形成缓冲层，以缓和随后的晶体生长形成。 N活性层设置在上约束层和下约束层之间。有源层包括掺杂III-N元素的半导体材料。接触层设置在上限制层上。在接触层上形成反向的隧道层，其中两者的导电类型不同。在反向隧穿层上形成透明层。阴极与导电缓冲层接触并与有源层和透明电极分离。

8. 发明授权

US06593597B2 Group III-V element-based LED having ESD protection capacity 有权
标题翻译：具有ESD保护能力的III-V族元件LED
公开(公告)号：US06593597B2
公开(公告)日：2003-07-15
申请号：US10091941
申请日：2002-03-05
申请人： Jinn-Kong Sheu
发明人： Jinn-Kong Sheu
IPC分类号： H01L29201
CPC分类号： H01L25/167 , H01L27/15 , H01L2224/05568 , H01L2224/05573 , H01L2224/056 , H01L2224/16 , H01L2924/09701 , H01L2924/00014
摘要： A group III-V element-based flip-chip assembled light-emitting diode structure with electrostatic protection capacity. A first conductive buffer layer and a second conductive buffer layer are formed over a transparent substrate. An active layer structure, a contact layer, an electrode is formed over the first conductive buffer layer. The active layer structure, the contact layer and the electrode together form a light-emitting diode structure. A metallic electrode is formed over the second conductive buffer layer to form a Schottky diode. Alternatively, a doped region is formed within the second conductive buffer layer to form a homo-junction diode structure. The anode and cathode of the diode above the second conductive buffer layer are electrically connected to the cathode and anode of the light-emitting diode, respectively.
摘要翻译：具有静电保护能力的III-V族元件倒装芯片组合发光二极管结构。在透明基板上形成第一导电缓冲层和第二导电缓冲层。在第一导电缓冲层上形成有源层结构，接触层，电极。有源层结构，接触层和电极一起形成发光二极管结构。金属电极形成在第二导电缓冲层之上以形成肖特基二极管。或者，在第二导电缓冲层内形成掺杂区以形成均聚二极管结构。在第二导电缓冲层之上的二极管的阳极和阴极分别电连接到发光二极管的阴极和阳极。

9. 发明授权

US08138518B2 Light emitting diode, package structure and manufacturing method thereof 有权
标题翻译：发光二极管，封装结构及其制造方法
公开(公告)号：US08138518B2
公开(公告)日：2012-03-20
申请号：US12419299
申请日：2009-04-07
申请人： Yao-Jun Tsai , Jinn-Kong Sheu , Hsi-Hsuan Yen , Hung-Lieh Hu
发明人： Yao-Jun Tsai , Jinn-Kong Sheu , Hsi-Hsuan Yen , Hung-Lieh Hu
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/38 , H01L33/382
摘要： A light emitting diode (LED), a fabricating method thereof, and a package structure thereof are provided. The LED includes a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer, a current distribution modifying layer, a first electrode and a second electrode. The active layer and the second semiconductor layer form a mesa structure and expose a part of the first semiconductor layer. The current distribution modifying layer is disposed on the second semiconductor layer. The first electrode is disposed on and electrically connected to the first semiconductor layer exposed by the mesa structure. The second electrode is disposed on the current distribution modifying layer and is electrically connected to the second semiconductor layer. The LED has superior light emitting efficiency.
摘要翻译：提供一种发光二极管（LED）及其制造方法及其封装结构。 LED包括基板，设置在基板上的第一半导体层，设置在第一半导体层上的有源层，设置在有源层上的第二半导体层，电流分布修改层，第一电极和第二电极。有源层和第二半导体层形成台面结构并暴露第一半导体层的一部分。电流分布修改层设置在第二半导体层上。第一电极设置在由台面结构暴露的第一半导体层上并与其电连接。第二电极设置在电流分布改性层上并与第二半导体层电连接。 LED具有出色的发光效率。

10. 发明授权

US07956282B2 Photoelectric conversion element 有权
标题翻译：光电转换元件
公开(公告)号：US07956282B2
公开(公告)日：2011-06-07
申请号：US12210358
申请日：2008-09-15
申请人： Jinn-Kong Sheu , Liang-Jyi Yan , Chih-Sung Chang
发明人： Jinn-Kong Sheu , Liang-Jyi Yan , Chih-Sung Chang
IPC分类号： H01L31/048 , H01L31/0224
CPC分类号： H01L31/125 , B82Y20/00 , H01L31/035236
摘要： A photoelectric conversion element comprises a solar-energy epitaxial layer, a bond layer and a LED epitaxial layer, which are stacked sequentially. The bond layer has a plurality of holes allowing light to pass. The solar-energy epitaxial layer receives light via the holes and generates electric energy, and an external secondary battery stores the electric energy. When environmental illumination disappears, the LED epitaxial layer is powered by the external secondary battery to emit light. When the photoelectric conversion element of the present invention applies to outdoor traffic signs, advertisement signboards and indicators, they can operate without external power supply.
摘要翻译：光电转换元件包括顺序层叠的太阳能外延层，接合层和LED外延层。接合层具有允许光通过的多个孔。太阳能外延层经由孔接收光并产生电能，外部二次电池存储电能。当环境照明消失时，LED外延层由外部二次电池供电以发光。当本发明的光电转换元件适用于户外交通标志，广告招牌和指标时，可以在没有外部电源的情况下运行。

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