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1. 发明授权

US06593597B2 Group III-V element-based LED having ESD protection capacity 有权
标题翻译：具有ESD保护能力的III-V族元件LED
公开(公告)号：US06593597B2
公开(公告)日：2003-07-15
申请号：US10091941
申请日：2002-03-05
申请人： Jinn-Kong Sheu
发明人： Jinn-Kong Sheu
IPC分类号： H01L29201
CPC分类号： H01L25/167 , H01L27/15 , H01L2224/05568 , H01L2224/05573 , H01L2224/056 , H01L2224/16 , H01L2924/09701 , H01L2924/00014
摘要： A group III-V element-based flip-chip assembled light-emitting diode structure with electrostatic protection capacity. A first conductive buffer layer and a second conductive buffer layer are formed over a transparent substrate. An active layer structure, a contact layer, an electrode is formed over the first conductive buffer layer. The active layer structure, the contact layer and the electrode together form a light-emitting diode structure. A metallic electrode is formed over the second conductive buffer layer to form a Schottky diode. Alternatively, a doped region is formed within the second conductive buffer layer to form a homo-junction diode structure. The anode and cathode of the diode above the second conductive buffer layer are electrically connected to the cathode and anode of the light-emitting diode, respectively.
摘要翻译：具有静电保护能力的III-V族元件倒装芯片组合发光二极管结构。在透明基板上形成第一导电缓冲层和第二导电缓冲层。在第一导电缓冲层上形成有源层结构，接触层，电极。有源层结构，接触层和电极一起形成发光二极管结构。金属电极形成在第二导电缓冲层之上以形成肖特基二极管。或者，在第二导电缓冲层内形成掺杂区以形成均聚二极管结构。在第二导电缓冲层之上的二极管的阳极和阴极分别电连接到发光二极管的阴极和阳极。

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