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1. 发明申请

US20050168127A1 [WHITE LIGHT LED] 审中-公开
公开(公告)号：US20050168127A1
公开(公告)日：2005-08-04
申请号：US10711002
申请日：2004-08-17
申请人： Shih-Chang Shei , Jinn-Kong Sheu , Jui-Kung Wu , Tai-Yu Chen , Chao-Lung Huang
发明人： Shih-Chang Shei , Jinn-Kong Sheu , Jui-Kung Wu , Tai-Yu Chen , Chao-Lung Huang
IPC分类号： C09K11/59 , C09K11/64 , C09K11/74 , C09K11/77 , H01L33/50 , H05B33/00
CPC分类号： C09K11/7774 , C09K11/592 , C09K11/643 , C09K11/7421 , C09K11/7701 , C09K11/7731 , C09K11/7734 , C09K11/778 , C09K11/7784 , C09K11/7787 , C09K11/7789 , C09K11/7796 , H01L33/502 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , Y02B20/181
摘要： A white light LED is provided. The white light LED includes an exciting light source and a fluorescent powder, wherein the wavelength of the light emitting from the exciting light source is in a range of about 250 nm to about 490 nmt. The fluorescent powder is disposed around the exciting light source to receive the light emitting from the exciting light source. Furthermore, the material of the fluorescent powder includes (Tb3-x-yCexRey)Al5O12, (Me1-x-yEuxRey)3SiO5, YBO3:Ce3+, YBO3:Tb3+, SrGa2O4:Eu2+, SrAl2O4:Eu2+, (Ba,Sr)MgAl10:Eu2+, Mn2+, Y2O3:Eu3+, Y2O3:Bi3+, (Y,Gd)2O3:Eu3+, (Y,Gd)2O3:Bi3+, Y2O2S:Eu3+, Y2O2S:Bi3+, (Me1-xEux)ReS, 6MgO,As2O5:Mn, Mg3SiO4:Mn, BaMgAl10O17:Eu2+ and (Ca,Sr,Ba)5(PO4)3Cl:Eu2+,Gd3+. The white light LED of the invention provides high luminous efficiency and excellent color rendering index.

2. 发明申请

US20070165414A1 LIGHT-EMITTING DIODE PACKAGE STRUCTURE 审中-公开
标题翻译：发光二极管封装结构
公开(公告)号：US20070165414A1
公开(公告)日：2007-07-19
申请号：US11682165
申请日：2007-03-05
申请人： Shih-Chang Shei , Jinn-Kong Sheu
发明人： Shih-Chang Shei , Jinn-Kong Sheu
IPC分类号： F21V15/00
CPC分类号： H01L33/62 , H01L25/167 , H01L33/60 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2924/01004 , H01L2924/01079 , H01L2924/12041 , H01L2924/3025 , H01L2224/05599
摘要： A light-emitting diode package structure is provided. The light-emitting diode package comprises an insulating sub-mount, a first patterned conductive-reflective film, a second patterned conductive-reflective film and a light-emitting diode chip. The insulating sub-mount has a first surface and a cavity therein. The first and the second patterned conductive-reflective film are set over a portion of the first surface, a portion of the sidewalls of the cavity and a portion of the bottom surface of the cavity. The light-emitting diode chip is set up inside the cavity of the insulating sub-mount. The light-emitting diode has a pair of electrodes. The electrodes are electrically connected to the first and the second patterned conductive-reflective film respectively. Since the light-emitting diode structure of this invention incorporates the patterned conductive-reflective films, efficiency of the light-emitting diode is increased.
摘要翻译：提供了一种发光二极管封装结构。发光二极管封装包括绝缘子安装座，第一图案化导电反射膜，第二图案化导电反射膜和发光二极管芯片。绝缘子安装座在其中具有第一表面和空腔。第一和第二图案化的导电反射膜设置在第一表面的一部分，空腔的侧壁的一部分和空腔的底表面的一部分上。发光二极管芯片设置在绝缘子安装座的腔内。发光二极管具有一对电极。电极分别电连接到第一和第二图案化导电反射膜。由于本发明的发光二极管结构具有图案化的导电反射膜，所以发光二极管的效率提高。

3. 发明授权

US07151281B2 Light-emitting diode structure with electrostatic discharge protection 失效
标题翻译：发光二极管结构具有静电放电保护功能
公开(公告)号：US07151281B2
公开(公告)日：2006-12-19
申请号：US10711531
申请日：2004-09-24
申请人： Shih-Chang Shei , Jinn-Kong Sheu
发明人： Shih-Chang Shei , Jinn-Kong Sheu
IPC分类号： H01L27/15 , H01L29/16
CPC分类号： H01L27/15 , H01L23/62 , H01L25/167 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting diode (LED) structure with electrostatic discharge (ESD) protection is described. The LED includes a substrate, a patterned semiconductor layer, a first electrode and a second electrode. The patterned semiconductor layer is disposed over the substrate, and is divided into at least a first island structure and a second island structure. The first electrode and the second electrode are connected between the first island structure and the second island structure. A shunt diode is formed by the first electrode, the second electrode and the second island structure. The shunt diode is connected in parallel to the LED with an inverse voltage compared to the LED. In the LED structure of the invention, the first island structure and the second island structure are manufactured simultaneously by the epitaxy procedure. Therefore, the LED could be protected from damage due to electrostatic discharge (ESD).
摘要翻译：描述了具有静电放电（ESD）保护的发光二极管（LED）结构。 LED包括衬底，图案化半导体层，第一电极和第二电极。图案化半导体层设置在衬底上，并且被划分为至少第一岛结构和第二岛结构。第一电极和第二电极连接在第一岛结构和第二岛结构之间。并联二极管由第一电极，第二电极和第二岛结构形成。与LED相比，并联二极管与LED并联连接，反向电压。在本发明的LED结构中，通过外延法同时制造第一岛结构和第二岛结构。因此，可以防止LED由于静电放电（ESD）而受到损坏。

4. 发明申请

US20050167680A1 LIGHT-EMITTING DIODE STRUCTURE WITH ELECTROSTATIC DISCHARGE PROTECTION 失效
标题翻译：具有静电放电保护功能的发光二极管结构
公开(公告)号：US20050167680A1
公开(公告)日：2005-08-04
申请号：US10711531
申请日：2004-09-24
申请人： Shih-Chang Shei , Jinn-Kong Sheu
发明人： Shih-Chang Shei , Jinn-Kong Sheu
IPC分类号： H01L25/16 , H01L27/15 , H01L33/00
CPC分类号： H01L27/15 , H01L23/62 , H01L25/167 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting diode (LED) structure with electrostatic discharge (ESD) protection is described. The LED includes a substrate, a patterned semiconductor layer, a first electrode and a second electrode. The patterned semiconductor layer is disposed over the substrate, and is divided into at least a first island structure and a second island structure. The first electrode and the second electrode are connected between the first island structure and the second island structure. A shunt diode is formed by the first electrode, the second electrode and the second island structure. The shunt diode is connected in parallel to the LED with an inverse voltage compared to the LED. In the LED structure of the invention, the first island structure and the second island structure are manufactured simultaneously by the epitaxy procedure. Therefore, the LED could be protected from damage due to electrostatic discharge (ESD).
摘要翻译：描述了具有静电放电（ESD）保护的发光二极管（LED）结构。 LED包括衬底，图案化半导体层，第一电极和第二电极。图案化半导体层设置在衬底上，并且被划分为至少第一岛结构和第二岛结构。第一电极和第二电极连接在第一岛结构和第二岛结构之间。并联二极管由第一电极，第二电极和第二岛结构形成。与LED相比，并联二极管与LED并联连接，反向电压。在本发明的LED结构中，通过外延法同时制造第一岛结构和第二岛结构。因此，可以防止LED由于静电放电（ESD）而受到损坏。

5. 发明授权

US07482696B2 Light-emitting diode package structure 有权
标题翻译：发光二极管封装结构
公开(公告)号：US07482696B2
公开(公告)日：2009-01-27
申请号：US10826003
申请日：2004-04-16
申请人： Shih-Chang Shei , Jinn-Kong Sheu
发明人： Shih-Chang Shei , Jinn-Kong Sheu
IPC分类号： H01L29/18
CPC分类号： H01L33/62 , H01L25/167 , H01L33/60 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2924/01004 , H01L2924/01079 , H01L2924/12041 , H01L2924/3025 , H01L2224/05599
摘要： A light-emitting diode package structure is provided. The light-emitting diode package comprises an insulating sub-mount, a first patterned conductive-reflective film, a second patterned conductive-reflective film and a light-emitting diode chip. The insulating sub-mount has a first surface and a cavity therein. The first and the second patterned conductive-reflective film are set over a portion of the first surface, a portion of the sidewalls of the cavity and a portion of the bottom surface of the cavity. The light-emitting diode chip is set up inside the cavity of the insulating sub-mount. The light-emitting diode has a pair of electrodes. The electrodes are electrically connected to the first and the second patterned conductive-reflective film respectively. Since the light-emitting diode structure of this invention incorporates the patterned conductive-reflective films, efficiency of the light-emitting diode is increased.
摘要翻译：提供了一种发光二极管封装结构。发光二极管封装包括绝缘子安装座，第一图案化导电反射膜，第二图案化导电反射膜和发光二极管芯片。绝缘子安装座在其中具有第一表面和空腔。第一和第二图案化的导电反射膜设置在第一表面的一部分，空腔的侧壁的一部分和空腔的底表面的一部分上。发光二极管芯片设置在绝缘子安装座的腔内。发光二极管具有一对电极。电极分别电连接到第一和第二图案化导电反射膜。由于本发明的发光二极管结构具有图案化的导电反射膜，所以发光二极管的效率提高。

6. 发明授权

US06914268B2 LED device, flip-chip LED package and light reflecting structure 有权
标题翻译： LED器件，倒装芯片LED封装和光反射结构
公开(公告)号：US06914268B2
公开(公告)日：2005-07-05
申请号：US10708203
申请日：2004-02-16
申请人： Shih-Chang Shei , Jinn-Kong Sheu
发明人： Shih-Chang Shei , Jinn-Kong Sheu
IPC分类号： H01L21/00 , H01L33/04 , H01L33/40 , H01L33/42 , H01L33/46 , H01L33/00
CPC分类号： H01L33/46 , H01L33/04 , H01L33/405 , H01L33/42
摘要： A light emitting diode (LED) device is provided. The LED device includes a device substrate, a first doped layer of a first conductivity type, a light emitting layer, a second doped layer of a second conductivity type, a transparent conductive oxide layer, a reflecting layer and two electrodes. The first doped layer is deposited on the device substrate, the light emitting layer is deposited on a portion of the first doped layer, and the second doped layer is deposited on the light emitting layer. The first and the second doped layers are comprised of III-V semiconductor material respectively. The transparent conductive oxide layer is deposited on the second doped layer, and the reflecting layer is deposited on the transparent conductive oxide layer. The two electrodes are deposited on the reflecting layer and the first doped layer respectively.
摘要翻译：提供了一种发光二极管（LED）装置。 LED器件包括器件衬底，第一导电类型的第一掺杂层，发光层，第二导电类型的第二掺杂层，透明导电氧化物层，反射层和两个电极。第一掺杂层沉积在器件衬底上，发光层沉积在第一掺杂层的一部分上，第二掺杂层沉积在发光层上。第一和第二掺杂层分别由III-V半导体材料组成。透明导电氧化物层沉积在第二掺杂层上，反射层沉积在透明导电氧化物层上。两个电极分别沉积在反射层和第一掺杂层上。

7. 发明申请

US20050087866A1 Flip-chip light emitting diode package structure 失效
标题翻译：倒装芯片发光二极管封装结构
公开(公告)号：US20050087866A1
公开(公告)日：2005-04-28
申请号：US10826805
申请日：2004-04-16
申请人： Shih-Chang Shei , Jinn-Kong Sheu
发明人： Shih-Chang Shei , Jinn-Kong Sheu
IPC分类号： H01L23/06 , H01L33/48 , H01L33/62 , H01L33/00
CPC分类号： H01L33/62 , H01L33/486 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/48091 , H01L2924/00014 , H01L2924/01004 , H01L2924/01077 , H01L2924/01079 , H01L2924/12041 , H01L2224/05599
摘要： A flip-chip LED package structure is disclosed. The flip-chip LED package structure includes a submount, patterned conductive films, a LED chip and two bumps. Several grooves are formed on the sidewalls of the submount. The patterned conductive films are formed on the grooves. The patterned conductive films extend from the grooves to parts of a top surface and a backside surface of the submount. The bumps are formed on two electrodes of the LED chip. The LED chip is disposed on the submount and connects electrically with the patterned conductive films via the bumps. The flip-chip LED package structure is disposed on a circuit board and connects electrically with the circuit without the wire bonding.
摘要翻译：公开了一种倒装芯片LED封装结构。倒装芯片LED封装结构包括底座，图案化导电膜，LED芯片和两个凸块。在底座的侧壁上形成几个凹槽。图案化的导电膜形成在凹槽上。图案化的导电膜从凹槽延伸到底座的顶表面和后侧表面的部分。凸块形成在LED芯片的两个电极上。 LED芯片设置在基座上，并通过凸块与图案化导电膜电连接。倒装芯片LED封装结构设置在电路板上，并与电路电连接而无需引线接合。

8. 发明授权

US07358173B2 Bumping process of light emitting diode 有权
标题翻译：发光二极管的冲击过程
公开(公告)号：US07358173B2
公开(公告)日：2008-04-15
申请号：US10711280
申请日：2004-09-07
申请人： Shih-Chang Shei , Jinn-Kong Sheu
发明人： Shih-Chang Shei , Jinn-Kong Sheu
IPC分类号： H01L21/44
CPC分类号： H01L24/11 , H01L33/62 , H01L2224/05001 , H01L2224/05022 , H01L2224/05027 , H01L2224/0508 , H01L2224/051 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05184 , H01L2224/05572 , H01L2224/056 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05671 , H01L2224/05684 , H01L2224/1147 , H01L2224/13099 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/12041 , H01L2924/00014
摘要： A bumping process for a light emitting diode (LED) chip is provided. Firstly, a LED chip with a plurality of electrodes is provided, then a pattern plate having a plurality of openings is disposed on the LED chip, and the electrodes are correspondingly exposed by the openings. Then, a plurality of posts can be formed over the exposed electrodes by printing. After the printing process, the pattern plate is lifted and a reflow process is performed to the posts. The posts are formed by a printing process, the bumping process is less time-consuming and with lower costs and the height and the composition of the bumps con be precisely controlled, thus improving the reliability of LED die package structures.
摘要翻译：提供了用于发光二极管（LED）芯片的碰撞处理。首先，提供具有多个电极的LED芯片，然后在LED芯片上设置具有多个开口的图案板，并且通过开口相应地露出电极。然后，可以通过印刷在曝光的电极上形成多个柱。在印刷过程之后，提升图案板并对柱进行回流处理。该柱由印刷工艺形成，凸块工艺耗时少，成本低，凸块的高度和组成被精确控制，提高了LED管芯封装结构的可靠性。

9. 发明授权

US07105860B2 Flip chip light-emitting diode package 有权
标题翻译：倒装芯片发光二极管封装
公开(公告)号：US07105860B2
公开(公告)日：2006-09-12
申请号：US10710421
申请日：2004-07-09
申请人： Shih-Chang Shei , Jinn-Kong Sheu
发明人： Shih-Chang Shei , Jinn-Kong Sheu
IPC分类号： H01L29/22 , H01L23/52
CPC分类号： H01L25/167 , H01L2224/05023 , H01L2224/0508 , H01L2224/05111 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05181 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/05644 , H01L2224/16 , H01L2924/00014
摘要： A flip chip light-emitting diode package comprising a Schottky diode group, a light-emitting diode and a plurality of bumps is provided. The Schottky diode group comprises a plurality of Schottky diodes electrically coupled in series or in parallel. The bumps are disposed between one of the Schottky diodes and the light-emitting diode so that the Schottky diode group and the light-emitting diode are connected reverse and in parallel. The light-emitting diode is disposed on one of the Schottky diodes and connected together by a flip-chip bonding process. The flip chip light-emitting diode package prevents damaging from electrostatic discharge and promotes light extraction efficiency. In addition, the submount of the Schottky diode is fabricated by using silicon material. Since silicon is an excellent material for heat dissipating, light extraction efficiency and reliability of the package is increased.
摘要翻译：提供了包括肖特基二极管组，发光二极管和多个凸块的倒装芯片发光二极管封装。肖特基二极管组包括串联或并联电耦合的多个肖特基二极管。凸块设置在肖特基二极管和发光二极管之一之间，使得肖特基二极管组和发光二极管反向并联连接。发光二极管配置在肖特基二极管之一并通过倒装芯片接合工艺连接在一起。倒装芯片发光二极管封装防止静电放电损坏，并提高光提取效率。此外，肖特基二极管的基座通过使用硅材料制造。由于硅是散热的优良材料，所以提高了光提取效率和封装的可靠性。

10. 发明申请

US20050205887A1 [FLIP CHIP LIGHT-EMITTING DIODE PACKAGE] 有权
标题翻译： [FLIP芯片发光二极管封装]
公开(公告)号：US20050205887A1
公开(公告)日：2005-09-22
申请号：US10710421
申请日：2004-07-09
申请人： Shih-Chang Shei , Jinn-Kong Sheu
发明人： Shih-Chang Shei , Jinn-Kong Sheu
IPC分类号： H01L25/16 , H01L29/22
CPC分类号： H01L25/167 , H01L2224/05023 , H01L2224/0508 , H01L2224/05111 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05181 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/05644 , H01L2224/16 , H01L2924/00014
摘要： A flip chip light-emitting diode package comprising a Schottky diode group, a light-emitting diode and a plurality of bumps is provided. The Schottky diode group comprises a plurality of Schottky diodes electrically coupled in series or in parallel. The bumps are disposed between one of the Schottky diodes and the light-emitting diode so that the Schottky diode group and the light-emitting diode are connected reverse and in parallel. The light-emitting diode is disposed on one of the Schottky diodes and connected together by a flip-chip bonding process. The flip chip light-emitting diode package prevents damaging from electrostatic discharge and promotes light extraction efficiency. In addition, the submount of the Schottky diode is fabricated by using silicon material. Since silicon is an excellent material for heat dissipating, light extraction efficiency and reliability of the package is increased.
摘要翻译：提供了包括肖特基二极管组，发光二极管和多个凸块的倒装芯片发光二极管封装。肖特基二极管组包括串联或并联电耦合的多个肖特基二极管。凸块设置在肖特基二极管和发光二极管之一之间，使得肖特基二极管组和发光二极管反向并联连接。发光二极管配置在肖特基二极管之一并通过倒装芯片接合工艺连接在一起。倒装芯片发光二极管封装防止静电放电损坏，并提高光提取效率。此外，肖特基二极管的基座通过使用硅材料制造。由于硅是散热的优良材料，所以提高了光提取效率和封装的可靠性。

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