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1. 发明申请

US20120203953A1 CONCURRENTLY SEARCHING MULTIPLE DEVICES OF A NON-VOLATILE SEMICONDUCTOR MEMORY 有权
标题翻译：同时搜索非易失性半导体存储器的多个器件
公开(公告)号：US20120203953A1
公开(公告)日：2012-08-09
申请号：US13021456
申请日：2011-02-04
申请人： ERICK O. ABASTO , JERRY LO
发明人： ERICK O. ABASTO , JERRY LO
IPC分类号： G06F12/00
CPC分类号： G06F13/4234 , G06F12/0246
摘要： A non-volatile semiconductor memory is disclosed comprising N memory devices each comprising a plurality of blocks, wherein each block comprises a plurality of memory segments accessed through an address. A searched is performed by issuing a read command for each of the N memory devices, wherein an address of each read command is separated by a distance determined in response to the search range of addresses and N, and the search range of addresses is greater than N. Data read from at least one of the memory devices is evaluated to determine whether the search has finished.
摘要翻译：公开了一种非易失性半导体存储器，其包括每个包括多个块的N个存储器件，其中每个块包括通过地址访问的多个存储器段。通过对N个存储器件中的每一个发出读取命令来执行搜索，其中每个读取命令的地址被分离响应于地址的搜索范围确定的距离和N，并且地址的搜索范围大于评估从至少一个存储设备读取的数据，以确定搜索是否已经完成。

2. 发明授权

US07343666B2 Methods of making magnetic write heads with use of linewidth shrinkage techniques 失效
标题翻译：使用线宽收缩技术制造磁头的方法
公开(公告)号：US07343666B2
公开(公告)日：2008-03-18
申请号：US10881782
申请日：2004-06-30
申请人： Kim Y. Lee , Jyh-Shuey Jerry Lo , Dennis Richard McKean
发明人： Kim Y. Lee , Jyh-Shuey Jerry Lo , Dennis Richard McKean
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3163 , G11B5/3116 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： In one illustrative example, a method for use in making a magnetic write head includes the steps of forming a first pole piece layer of a first pole piece; forming a patterned resist over the first pole piece layer; electroplating a pedestal over the first pole piece layer within a channel of the patterned resist; electroplating a metal gap layer over the pedestal within the channel of the patterned resist; forming a resist channel shrinking film over the patterned resist; baking the resist channel shrinking film over the patterned to thereby reduce a width of the channel; removing the resist channel shrinking film; electroplating a second pole piece within the reduced-width channel of the patterned resist; removing the patterned resist; and milling the pedestal, using the second pole piece as a mask, to form a central notched pedestal having side walls with angled slopes.
摘要翻译：在一个说明性示例中，用于制造磁写头的方法包括以下步骤：形成第一极片的第一极片层; 在所述第一极片层上形成图案化抗蚀剂; 在图案化的抗蚀剂的通道内的第一极片层上电镀一个基座; 在图案化的抗蚀剂的通道内的基座上方电镀金属间隙层; 在图案化的抗蚀剂上形成抗蚀剂通道收缩膜; 在图案上烘烤抗蚀剂通道收缩膜，从而减小通道的宽度; 去除抗蚀剂通道收缩膜; 在图案化的抗蚀剂的减小宽度的通道内电镀第二极片; 去除图案化的抗蚀剂; 并使用第二极片作为掩模铣削基座，以形成具有倾斜斜面的侧壁的中心凹口底座。

3. 发明授权

US07086139B2 Methods of making magnetic write heads using electron beam lithography 失效
标题翻译：使用电子束光刻制作磁写头的方法
公开(公告)号：US07086139B2
公开(公告)日：2006-08-08
申请号：US10836136
申请日：2004-04-30
申请人： Kim Y. Lee , Jyh-Shuey Jerry Lo
发明人： Kim Y. Lee , Jyh-Shuey Jerry Lo
IPC分类号： G11B5/127 , G11B5/187
CPC分类号： G11B5/1878 , Y10T29/49021 , Y10T29/49032 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49052
摘要： A pedestal is formed over a first pole piece layer and insulator materials are formed to surround it. A gap layer made of a non-magnetic insulator or metal is then formed over the pedestal and the insulator, followed by the optional formation of a seed layer. A second pole piece is formed over the gap layer with or without the seed layer by forming a patterned resist using E-beam lithography and electroplating second pole piece materials within the patterned resist. After milling to remove side portions of the gap layer and the optional seed layer, a chemical etch is performed to remove a top portion of the insulator materials. The pedestal is then notched and trimmed by ion milling using the second pole piece as a mask to form a central notched structure. Since the second pole piece is precisely centered over the pedestal prior to notching, the pedestal is notched symmetrically to form a notched structure having side walls with angled slopes.
摘要翻译：在第一极片层上形成基座，并且形成绝缘体材料以围绕它。然后在基座和绝缘体上形成由非磁性绝缘体或金属制成的间隙层，随后可选地形成种子层。通过在图案化的抗蚀剂内使用电子束光刻和电镀第二极片材料形成图案化的抗蚀剂，形成具有或不具有种子层的间隙层上的第二极片。在研磨以除去间隙层和任选种子层的侧面部分之后，进行化学蚀刻以去除绝缘体材料的顶部。然后通过使用第二极片作为掩模的离子铣削将基座切口并修整以形成中心的切口结构。由于第二极靴在开槽之前精确地位于基座上方，因此基座被对称地切口以形成具有斜边的侧壁的凹口结构。

4. 发明授权

US06857181B2 Method of making a T-shaped write head with less side writing 有权
公开(公告)号：US06857181B2
公开(公告)日：2005-02-22
申请号：US10217768
申请日：2002-08-12
申请人： Jyh-Shuey (Jerry) Lo , Timothy J. Moran
发明人： Jyh-Shuey (Jerry) Lo , Timothy J. Moran
IPC分类号： G11B5/31 , G11B5/33 , G11B5/39 , G11B5/127 , H04R31/00
CPC分类号： B82Y10/00 , G11B5/3103 , G11B5/3116 , G11B5/313 , G11B5/332 , G11B5/3967 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046
摘要： First, second and third pole tip components of a write head are formed with the second pole tip located between the first and third components and a write gap layer located between the first and second pole tip components. The second pole tip is formed with a width that defines a track width of the write head. The third pole tip component is formed with top and bottom surfaces wherein the bottom surface interfaces a top surface of the second pole tip component and has a width equal to the track width and wherein the top surface of the third pole tip has a width greater than the track width.

5. 发明授权

US6119331A Notching the first pole piece of a write head with a notching layer in a combined magnetic head 失效
公开(公告)号：US6119331A
公开(公告)日：2000-09-19
申请号：US889258
申请日：1997-07-08
申请人： Thomas Young Chang , Edward Hinpong Lee , Jhy-Shuey Jerry Lo
发明人： Thomas Young Chang , Edward Hinpong Lee , Jhy-Shuey Jerry Lo
IPC分类号： G11B5/31 , G11B5/39 , G11B5/127
CPC分类号： G11B5/3967 , G11B5/3116 , G11B5/3163 , Y10T29/49044 , Y10T29/49048
摘要： In the manufacture of a combined magnetic head, milling time for notching a first pole piece of the head's write element is reduced by constructing the first pole piece with a notching layer on a first pole piece layer, the notching layer having first and second corners adjacent first and second side walls of the second pole tip. The first pole piece layer has a wide lateral expanse, and the notching layer has a narrow lateral expanse. The width of the notching layer is preferably 0.2 .mu.m to 2.0 .mu.m wider than a target track width of the second pole tip. With this arrangement, the notching layer has first and second side walls that project 0.10 .mu.m to 1.0 .mu.m, laterally, beyond first and second side walls, respectively, of the second pole tip. The thickness of the notching layer is preferably between 0.1 .mu.m to 1.0 .mu.m. Accordingly, full notching of the notching layer can be achieved by milling a small corner in a range of 0.10 .mu.m by 0.10 .mu.m to 1.0 .mu.m by 1.0 .mu.m, as seen in an ABS view. The gap layer is formed on the notching layer, followed by forming the second pole tip on the gap layer. Milling at an angle is then employed to mill through the gap layer and notch the notching layer. In comparison to milling a prior art large lateral expanse of the first pole piece to achieve notching, milling the small corner of the notching layer requires a very short milling time. This results in less consumption of the second pole tip, so that better control of a final track width can be accomplished. Also, since there is less consumption of the top of the second pole tip, the aspect ratio of photoresist employed to construct the second pole tip is reduced, so as to enhance the line width of the second pole tip. Further, there is less redeposited material to clean up after the milling cycle. All of these factors reduce the process time and increase manufacturing throughput.

6. 发明授权

US6054023A Method of making inverted merged MR head with track width defining first pole tip component constructed on a side wall 失效
标题翻译：制造具有轨道宽度的反向合并MR头的方法，其限定在侧壁上构造的第一极尖部分
公开(公告)号：US6054023A
公开(公告)日：2000-04-25
申请号：US361392
申请日：1999-07-26
申请人： Thomas Young Chang , Jyh-Shuey Jerry Lo
发明人： Thomas Young Chang , Jyh-Shuey Jerry Lo
IPC分类号： G11B5/012 , G11B5/31 , G11B5/39 , C23C14/34 , G11B5/127 , H04R31/00
CPC分类号： G11B5/3967 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/012 , Y10T29/49043
摘要： A method of making provides an inverted merged MR head wherein frame plating is not required for forming a highly defined submicron track width of a top first pole tip portion. A forming structure is formed on a bottom first pole tip portion with a vertical wall located at a site where one of the edges of the top first pole tip is to be located. The top first pole tip is sputtered or plated on the vertical wall of the forming structure with a thickness that defines the track width of the write head. A mask with a recessed portion may be employed for forming the top first pole tip with a back wall that defines a zero throat height of the head. In a preferred embodiment a forming layer is formed adjacent an opposite edge of the top first pole tip and then the top surfaces of the top first pole tip, the forming layer and the forming structure are lapped until these top surfaces are flush with one another. The material of the top first pole tip has an ion milling rate that is greater than the ion milling rates of the forming layer and the forming structure. Ion milling is then employed to ion mill the top of the top first pole tip at a greater rate than the other layers causing a recess which is centered above the top surface of the top first pole tip. After depositing a write gap layer and a seedlayer in the recess the second pole tip is deposited in the recess causing the base of the second pole tip to be substantially aligned with the top surface of the top first pole tip. Sloping surfaces extending from the base of the second pole tip are similar to notching of a first pole piece in the prior art which promotes flux transfer between the pole tips and minimizes stray flux from the second pole tip to the bottom first pole tip.
摘要翻译：一种制造方法提供反向合并的MR头，其中不需要框架电镀以形成顶部第一极尖端部分的高度限定的亚微米轨道宽度。形成结构形成在底部第一极尖端部分上，其中垂直壁位于顶部第一极尖端的一个边缘将被定位的位置处。顶部的第一极尖被溅射或镀在成形结构的垂直壁上，其厚度限定了写入头的轨道宽度。可以采用具有凹陷部分的掩模来形成具有限定头部的零喉部高度的后壁的顶部第一极尖端。在优选实施例中，形成层邻近顶部第一极尖端的相对边缘形成，然后上顶部第一极尖端，成形层和成形结构的顶表面被研磨直到这些顶部表面彼此齐平。顶部第一极尖的材料的离子研磨速率大于成形层和成形结构的离子研磨速率。然后使用离子铣削以比其它层更大的速率将顶部第一极尖的顶部离子磨，从而形成位于顶部第一极尖顶部顶部的中心的凹部。在凹槽中沉积写间隙层和种子层之后，第二极尖沉积在凹槽中，使得第二极尖的基部与顶部第一极尖的顶表面基本上对准。从第二极尖的基部延伸的斜面类似于现有技术中的第一极靴的切口，其促进极尖之间的磁通传递并使从第二极尖到底部第一极尖的杂散磁通最小化。

7. 发明授权

US5664316A Method of manufacturing magnetoresistive read transducer having a contiguous longitudinal bias layer 失效
标题翻译：制造具有连续纵向偏置层的磁阻读取传感器的方法
公开(公告)号：US5664316A
公开(公告)日：1997-09-09
申请号：US438430
申请日：1995-05-10
申请人： Mao-Min Chen , Robert Edward Fontana , Mohamad Towfik Krounbi , Kenneth Ting-Yuan Kung , James Hsi-Tang Lee , Jyh-Shiliey Jerry Lo , Ching Hwa Tsang , Po-Kang Wang
发明人： Mao-Min Chen , Robert Edward Fontana , Mohamad Towfik Krounbi , Kenneth Ting-Yuan Kung , James Hsi-Tang Lee , Jyh-Shiliey Jerry Lo , Ching Hwa Tsang , Po-Kang Wang
IPC分类号： G11B5/31 , G11B5/39 , G11B5/127
CPC分类号： G11B5/3932 , G11B5/399 , G11B5/3163 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046
摘要： A magnetoresistive (MR) read transducer having passive end regions separated by a central active region in which an MR layer is formed over substantially only the central active region and in which a magnetic bias layers is formed in each passive end region. Each of the magnetic bias layers includes a layer of ferromagnetic material and a layer of antiferromagnetic material overlaying and in contact with the ferromagnetic layer to provide an exchange-coupled magnetic bias field. Each of the magnetic bias layers form an abutting junction having magnetic and electrically continuity with the MR layer to produce a longitudinal magnetic bias field in the transducer.
摘要翻译：磁阻（MR）读取传感器，其具有被中心有源区隔开的被动端区，其中MR层基本上仅形成在中心有源区上，并且在每个被动端区中形成磁偏置层。每个磁偏置层包括铁磁材料层和叠层并与铁磁层接触的反铁磁材料层，以提供交换耦合磁偏置场。每个磁偏置层形成与MR层具有磁性和电连续性的邻接结，以在换能器中产生纵向磁偏置场。

8. 发明授权

US09170932B1 System data storage mechanism providing coherency and segmented data loading 有权
标题翻译：提供一致性和分段数据加载的系统数据存储机制
公开(公告)号：US09170932B1
公开(公告)日：2015-10-27
申请号：US13478036
申请日：2012-05-22
申请人： Jerry Lo , Dominic S. Suryabudi , Lan D. Phan
发明人： Jerry Lo , Dominic S. Suryabudi , Lan D. Phan
IPC分类号： G06F12/00 , G06F12/02 , G06F3/06 , G06F11/14
CPC分类号： G06F3/0619 , G06F3/065 , G06F3/0679 , G06F3/0685 , G06F11/1435 , G06F11/1448 , G06F11/1458 , G06F11/1469 , G06F12/0246 , G06F12/0804
摘要： A data storage subsystem is disclosed that implements a process for storing and/or reconstructing system data, such as a system mapping table. In certain embodiments, table pages are systematically copied, or flushed, to non-volatile memory in a progressive manner, according to a fixed ratio of flushed table pages per table update trigger, thereby facilitating write and/or load efficiency. Full or partial reconstruction of a table may be performed within a bounded number of operations based on the size of the table, the ratio implemented, and/or other characteristics.
摘要翻译：公开了一种实现用于存储和/或重建系统数据的过程的数据存储子系统，诸如系统映射表。在某些实施例中，根据每个表更新触发器的刷新表页面的固定比例，以逐行方式将表格页面系统地复制或刷新到非易失性存储器，从而便于写入和/或加载效率。可以基于表的大小，实现的比例和/或其他特征，在有限数量的操作中执行表的全部或部分重建。

9. 发明授权

US09075708B1 System and method for improving data integrity and power-on performance in storage devices 有权
标题翻译：提高存储设备数据完整性和开机性能的系统和方法
公开(公告)号：US09075708B1
公开(公告)日：2015-07-07
申请号：US13173431
申请日：2011-06-30
申请人： Ho-Fan Kang , Stephen P. Hack , Jerry Lo , Frederick H. Adi , Lan D. Phan
发明人： Ho-Fan Kang , Stephen P. Hack , Jerry Lo , Frederick H. Adi , Lan D. Phan
IPC分类号： G06F12/00 , G06F12/02
CPC分类号： G06F12/0246 , G06F2212/7202 , G06F2212/7207 , G06F2212/7209
摘要： The present disclosure is directed to managing write commands for a storage system implementing address indirection. In some storage systems, a mapping table that provides logical-to-physical mapping may have individual entries that each references a logical address size that exceeds the size of an atomic write to the storage media. In such systems, a write to a logical address is not atomic as it may require several discrete physical writes that may individually fail. The techniques presented employ several pre-commit and post-commit actions to save data that enables the storage system to make writes to these logical addresses atomic and prevent undue delay on powerup.
摘要翻译：本公开涉及管理实现地址间接的存储系统的写入命令。在一些存储系统中，提供逻辑到物理映射的映射表可以具有每个条目，每个条目引用超过对存储介质的原子写入大小的逻辑地址大小。在这种系统中，对逻辑地址的写入不是原子的，因为它可能需要可能单独失败的多个离散物理写入。所提出的技术采用几种预提交和后提交操作来保存数据，使存储系统能够对这些逻辑地址进行原子写入，并防止在上电时出现不适当的延迟。

10. 发明授权

US07480983B2 Method for making magnetic write head 失效
标题翻译：磁头写入方法
公开(公告)号：US07480983B2
公开(公告)日：2009-01-27
申请号：US10856637
申请日：2004-05-28
申请人： Jyh-Shuey Jerry Lo
发明人： Jyh-Shuey Jerry Lo
IPC分类号： G11B5/127
CPC分类号： G11B5/3166 , Y10T29/49032 , Y10T29/49037 , Y10T29/49041 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Two trim/notch milling steps are used to refine the track width that is defined by the second pole piece tip of a write head. The second milling step uses feedback gained after the first milling step to refine the P2B (pole P2 bottom width) dimension. A final milling step may be conducted after receiving feedback from the result of the second trim/notch milling step.
摘要翻译：使用两个修剪/切割铣削步骤来细化由写入头的第二极片尖端限定的轨道宽度。第二个铣削步骤使用在第一个铣削步骤之后获得的反馈来精炼P2B（极点P2底部宽度）尺寸。在从第二微调/凹口研磨步骤的结果接收反馈之后，可以进行最终研磨步骤。

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