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1. 发明授权

US06265233B1 Method for determining crack limit of film deposited on semiconductor wafer 有权
标题翻译：确定沉积在半导体晶圆上的薄膜裂纹极限的方法
公开(公告)号：US06265233B1
公开(公告)日：2001-07-24
申请号：US09326096
申请日：1999-06-04
申请人： Jason C. S. Chu , Jerry C. S. Lin , Roger Tun-Fu Hung , Chih-Ta Wu
发明人： Jason C. S. Chu , Jerry C. S. Lin , Roger Tun-Fu Hung , Chih-Ta Wu
IPC分类号： G01R3126
CPC分类号： H01L22/34 , H01L21/02164 , H01L21/02271 , H01L21/31612
摘要： A method for determining a crack limit of a target film deposited on a wafer in production after a post annealing procedure is disclosed. The crack limit is determined by adopting and adjusting the thermal shrinkage rates of a plurality of target films deposited on bare wafers and annealed. The test results on bare wafers can be applied to the production wafers to prevent from film cracking and/or inspect instrumental conditions.
摘要翻译：公开了一种用于确定在后退火程序之后在生产中沉积在晶片上的靶膜的裂纹极限的方法。通过采用和调整沉积在裸晶片上并退火的多个靶膜的热收缩率来确定裂纹极限。裸晶片上的测试结果可以应用于生产晶片，以防止膜破裂和/或检查仪器条件。

2. 发明授权

US06365524B1 Method for making a concave bottom oxide within a trench 失效
标题翻译：在沟槽内制作凹底氧化物的方法
公开(公告)号：US06365524B1
公开(公告)日：2002-04-02
申请号：US09310031
申请日：1999-05-11
申请人： Chien-Hung Chen , Chung-Yih Chen , Jerry C. S. Lin , Yen-Rong Chang
发明人： Chien-Hung Chen , Chung-Yih Chen , Jerry C. S. Lin , Yen-Rong Chang
IPC分类号： H01L21302
CPC分类号： H01L21/76232 , H01L21/31612
摘要： This present discloses a method for making a concave bottom oxide within a trench, the steps comprising: providing a semiconductor substrate; forming an insulating layer on the semiconductor substrate; defining the insulating layer to form an opening exposing the surface of the semiconductor substrate; dry-etching the exposed semiconductor substrate within the opening by using the first insulating layer as an etching mask to form a trench; depositing a first oxide layer conformably over the insulating layer, the side-walls and the bottom of the trench; depositing a second oxide layer on the first oxide layer and filling-up the trench surrounded by the first oxide layer; annealing to densify the first and second oxide layers; etching-back the first and second oxide layer to remove the portion overlying the first insulating layer, and forming a spacer consisting of the residual first oxide layer on the side-walls of the trench, and a concave bottom oxide consisting of the first and second oxide layers on the bottom of the trench.
摘要翻译：本发明公开了一种在沟槽内制造凹底氧化物的方法，所述步骤包括：提供半导体衬底; 在半导体衬底上形成绝缘层; 限定所述绝缘层以形成暴露所述半导体衬底的表面的开口; 通过使用第一绝缘层作为蚀刻掩模对开口内的暴露的半导体衬底进行干蚀刻以形成沟槽; 在绝缘层，沟槽的侧壁和底部上顺应地沉积第一氧化物层; 在所述第一氧化物层上沉积第二氧化物层并填充由所述第一氧化物层包围的所述沟槽; 退火以使第一和第二氧化物层致密化; 蚀刻第一和第二氧化物层以除去覆盖第一绝缘层的部分，以及在沟槽的侧壁上形成由残留的第一氧化物层组成的间隔物和由第一和第二氧化物组成的凹底氧化物沟槽底部的氧化物层。

3. 发明授权

US06242365B1 Method for preventing film deposited on semiconductor wafer from cracking 有权
标题翻译：防止沉积在半导体晶片上的膜破裂的方法
公开(公告)号：US06242365B1
公开(公告)日：2001-06-05
申请号：US09325915
申请日：1999-06-04
申请人： Jason C. S. Chu , Jerry C. S. Lin , Roger Tun-Fu Hung , Chih-Ta Wu
发明人： Jason C. S. Chu , Jerry C. S. Lin , Roger Tun-Fu Hung , Chih-Ta Wu
IPC分类号： H01L21322
CPC分类号： H01L22/34 , H01L21/02164 , H01L21/02271 , H01L21/31612
摘要： A method for preventing a target film deposited on a wafer in production from cracking after a post annealing procedure is disclosed. The method is performed by previously determining a crack limit before the target film is deposited on the wafer in production. The crack limit is determined by adopting and adjusting the thermal shrinkage rates of a plurality of target films deposited on bare wafers and annealed. After the crack limit is determined, a system-adjusting step and a reconfirmation step are performed, if necessary, to make sure the system conditions determined by the test results on bare wafers are suitably applied to the production wafers to prevent from film cracking. Moreover, the instrumental conditions can be inspected and tuned accordingly.
摘要翻译：公开了一种在后退火处理中防止沉积在晶片上的目标膜破裂的方法。该方法通过在生产中将靶膜沉积在晶片上之前预先确定裂纹极限来进行。通过采用和调整沉积在裸晶片上并退火的多个靶膜的热收缩率来确定裂纹极限。在确定裂纹极限之后，如果需要，执行系统调整步骤和再确认步骤，以确保通过裸晶片上的测试结果确定的系统条件适用于生产晶片以防止膜破裂。此外，工具条件可以相应地进行检查和调整。

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