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1. 发明授权

US06265233B1 Method for determining crack limit of film deposited on semiconductor wafer 有权
标题翻译：确定沉积在半导体晶圆上的薄膜裂纹极限的方法
公开(公告)号：US06265233B1
公开(公告)日：2001-07-24
申请号：US09326096
申请日：1999-06-04
申请人： Jason C. S. Chu , Jerry C. S. Lin , Roger Tun-Fu Hung , Chih-Ta Wu
发明人： Jason C. S. Chu , Jerry C. S. Lin , Roger Tun-Fu Hung , Chih-Ta Wu
IPC分类号： G01R3126
CPC分类号： H01L22/34 , H01L21/02164 , H01L21/02271 , H01L21/31612
摘要： A method for determining a crack limit of a target film deposited on a wafer in production after a post annealing procedure is disclosed. The crack limit is determined by adopting and adjusting the thermal shrinkage rates of a plurality of target films deposited on bare wafers and annealed. The test results on bare wafers can be applied to the production wafers to prevent from film cracking and/or inspect instrumental conditions.
摘要翻译：公开了一种用于确定在后退火程序之后在生产中沉积在晶片上的靶膜的裂纹极限的方法。通过采用和调整沉积在裸晶片上并退火的多个靶膜的热收缩率来确定裂纹极限。裸晶片上的测试结果可以应用于生产晶片，以防止膜破裂和/或检查仪器条件。

2. 发明授权

US06310688B1 Method for measuring the parameter of a rough film 有权
标题翻译：测量粗糙膜参数的方法
公开(公告)号：US06310688B1
公开(公告)日：2001-10-30
申请号：US09131405
申请日：1998-08-10
申请人： Ming-Kuan Kao , Jason C. S. Chu
发明人： Ming-Kuan Kao , Jason C. S. Chu
IPC分类号： G01J400
CPC分类号： G01B11/0641
摘要： A method for measuring the parameter of a rough film is presented in this invention. In which the optical property of a rough film is further defined by utilizing the characteristics of an optical instrument and silicon film, without disturbance from noise in measurement. Therefore, good or bad the rough film is can be detected effectively, further, a handy method can be offered to control the stability in the manufacturing process. The invention is performed by choosing a measuring light with wavelength in a certain range and an optical instrument, then comparing the result with a standard value to monitor the result of the manufacturing process of the rough film.
摘要翻译：本发明提出了一种用于测量粗糙膜参数的方法。通过利用光学仪器和硅膜的特性进一步限定粗糙膜的光学性质，而不会在测量中产生噪声干扰。因此，可以有效地检测粗糙膜，进一步地，可以提供方便的方法来控制制造过程中的稳定性。本发明通过选择波长在一定范围内的测量光和光学仪器进行，然后将结果与标准值进行比较，以监测粗糙膜的制造过程的结果。

3. 发明授权

US06699789B2 Metallization process to reduce stress between Al-Cu layer and titanium nitride layer 有权
标题翻译：金属化过程，以减少Al-Cu层和氮化钛层之间的应力
公开(公告)号：US06699789B2
公开(公告)日：2004-03-02
申请号：US10113705
申请日：2002-03-27
申请人： Zhih-Sheng Yang , Chung-Yan Cheng , Ying-Yan Huang , Jason C. S. Chu
发明人： Zhih-Sheng Yang , Chung-Yan Cheng , Ying-Yan Huang , Jason C. S. Chu
IPC分类号： H01L21443
CPC分类号： H01L21/7685 , H01L21/2855 , H01L21/32051
摘要： Embodiments of the present invention are directed to a metallization process for reducing the stress existing between the Al—Cu layer and the titanium nitride (TiN) layer, and solving the galvanic problem. The process does so by cooling the wafer in the vacuum apparatus where the metallization process is performed after formation of the Al—Cu layer and before the formation of the TiN layer. In accordance with an aspect of the present invention, a metallization process comprises placing a wafer in an Al—Cu sputtering chamber to form an Al—Cu layer on the wafer, and transferring the wafer to a titanium nitride sputtering chamber. An inert gas is introduced into the titanium nitride sputtering chamber to cool the wafer. A titanium nitride layer is formed on the Al—Cu layer of the wafer in the titanium nitride sputtering layer after cooling the wafer.
摘要翻译：本发明的实施例涉及一种用于减少存在于Al-Cu层和氮化钛（TiN）层之间的应力并且解决电偶问题的金属化方法。该方法通过冷却在形成Al-Cu层之后和形成TiN层之前进行金属化处理的真空装置中的晶片。根据本发明的一个方面，金属化工艺包括将晶片放置在Al-Cu溅射室中以在晶片上形成Al-Cu层，并将晶片转移到氮化钛溅射室。将惰性气体引入到氮化钛溅射室中以冷却晶片。在冷却晶片之后，在氮化钛溅射层中的晶片的Al-Cu层上形成氮化钛层。

4. 发明授权

US06242365B1 Method for preventing film deposited on semiconductor wafer from cracking 有权
标题翻译：防止沉积在半导体晶片上的膜破裂的方法
公开(公告)号：US06242365B1
公开(公告)日：2001-06-05
申请号：US09325915
申请日：1999-06-04
申请人： Jason C. S. Chu , Jerry C. S. Lin , Roger Tun-Fu Hung , Chih-Ta Wu
发明人： Jason C. S. Chu , Jerry C. S. Lin , Roger Tun-Fu Hung , Chih-Ta Wu
IPC分类号： H01L21322
CPC分类号： H01L22/34 , H01L21/02164 , H01L21/02271 , H01L21/31612
摘要： A method for preventing a target film deposited on a wafer in production from cracking after a post annealing procedure is disclosed. The method is performed by previously determining a crack limit before the target film is deposited on the wafer in production. The crack limit is determined by adopting and adjusting the thermal shrinkage rates of a plurality of target films deposited on bare wafers and annealed. After the crack limit is determined, a system-adjusting step and a reconfirmation step are performed, if necessary, to make sure the system conditions determined by the test results on bare wafers are suitably applied to the production wafers to prevent from film cracking. Moreover, the instrumental conditions can be inspected and tuned accordingly.
摘要翻译：公开了一种在后退火处理中防止沉积在晶片上的目标膜破裂的方法。该方法通过在生产中将靶膜沉积在晶片上之前预先确定裂纹极限来进行。通过采用和调整沉积在裸晶片上并退火的多个靶膜的热收缩率来确定裂纹极限。在确定裂纹极限之后，如果需要，执行系统调整步骤和再确认步骤，以确保通过裸晶片上的测试结果确定的系统条件适用于生产晶片以防止膜破裂。此外，工具条件可以相应地进行检查和调整。

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