会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Circuits providing ESD protection to high voltage laterally diffused metal oxide semiconductor (LDMOS) transistors
    • 向高压侧向扩散金属氧化物半导体(LDMOS)晶体管提供ESD保护的电路
    • US07838937B1
    • 2010-11-23
    • US11234255
    • 2005-09-23
    • Andrew J. WalkerHelmut PuchnerHarold M. KutzJames H. Shutt
    • Andrew J. WalkerHelmut PuchnerHarold M. KutzJames H. Shutt
    • H01L23/62
    • H01L27/0266H01L27/0262H01L29/87
    • Circuits including a laterally diffused output driver transistor and a distinct device configured to provide electrostatic discharge (ESD) protection for the laterally diffused output driver transistor are presented. In general, the device configured to provide ESD protection includes a drain extended metal oxide semiconductor transistor (DEMOS) transistor configured to breakdown at a lower voltage than a breakdown voltage of the laterally diffused output driver transistor. The laterally diffused output driver transistor may be a pull-down or a pull-up output driver transistor. The device also includes a silicon controlled rectifier (SCR) configured to inject charge within a semiconductor layer of the circuit upon breakdown of the DEMOS transistor. Moreover, the device includes a region configured to collect the charge injected from the SCR and further includes an ohmic contact region configured to at least partially affect the holding voltage of the SCR.
    • 提供了包括横向扩散的输出驱动晶体管和被配置为为横向扩散输出驱动晶体管提供静电放电(ESD))保护的不同器件的电路。 通常,被配置为提供ESD保护的器件包括漏极延伸的金属氧化物半导体晶体管(DEMOS)晶体管,被配置为在比横向扩散的输出驱动晶体管的击穿电压低的电压下击穿。 横向扩散的输出驱动晶体管可以是下拉或上拉输出驱动晶体管。 该器件还包括被配置为在DEMOS晶体管击穿时在电路的半导体层内注入电荷的可控硅整流器(SCR)。 此外,该器件包括被配置为收集从SCR注入的电荷的区域,并且还包括被配置为至少部分地影响SCR的保持电压的欧姆接触区域。