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    • 1. 发明授权
    • System and method for displaying received data using separate device
    • 使用单独设备显示接收到的数据的系统和方法
    • US07690557B2
    • 2010-04-06
    • US11324585
    • 2006-01-04
    • Jae-hak Kim
    • Jae-hak Kim
    • G06F17/00
    • H04L51/14
    • A method and apparatus for displaying received data using a separate device that makes a user's receiving terminal, that has received only a unique code of data, transmit the unique code to a separate display device connected to the Internet, and which makes the display device access a server, in which the data is stored, and display the data corresponding to the unique code. The apparatus displays received data using a code generation unit for generating a first unique code that matches metadata received from a data server that stores the data and the metadata, a first communication unit for transmitting the first unique code to a receiving terminal, and a second communication unit for receiving a second unique code from a display device and transmitting the stored metadata that matches the first unique code to the display device if the first unique code corresponds to the second unique code.
    • 一种用于使用仅接收唯一的数据代码的用户接收终端的独立设备来显示接收的数据的方法和装置,将唯一的代码发送到连接到因特网的单独的显示设备,并且使显示设备访问 存储数据的服务器,并显示对应于唯一代码的数据。 该装置使用代码生成单元显示接收到的数据,该代码生成单元用于生成与从存储数据和元数据的数据服务器接收的元数据相匹配的第一唯一码,用于将第一唯一码发送到接收终端的第一通信单元, 通信单元,用于从显示设备接收第二唯一代码,并且如果所述第一唯一码对应于所述第二唯一码,则将与所述第一唯一码匹配的所存储的元数据发送到所述显示设备。
    • 6. 发明授权
    • Method for forming metal wiring layer of semiconductor device
    • 用于形成半导体器件的金属布线层的方法
    • US06815331B2
    • 2004-11-09
    • US10392710
    • 2003-03-20
    • Kyoung-woo LeeHong-jae ShinJae-hak KimSoo-geun Lee
    • Kyoung-woo LeeHong-jae ShinJae-hak KimSoo-geun Lee
    • H01L214163
    • H01L21/76808H01L21/76813
    • Methods for forming a metal wiring layer in a semiconductor device using a dual damascene process. In one aspect, a method for forming metal wiring in a semiconductor device comprises: forming a stopper layer on a semiconductor substrate that has a conductive layer formed thereon; forming an interlayer dielectric layer on the stopper layer; forming a hard mask layer on the interlayer dielectric layer; forming a first photoresist pattern on the hard mask layer, the first photoresist pattern having a first opening corresponding to the conductive layer; etching the hard mask layer and the interlayer dielectric layer using the first photoresist pattern as an etching mask to form a via hole in the interlayer dielectric layer through which a portion of the stopper layer is exposed; removing the first photoresist pattern; filling the via hole with an intermediary material layer; etching a portion of the hard mask layer to form a hard mask pattern that defines a wiring region, wherein the hard mask pattern comprises a second opening that overlaps the entire via hole or at least a portion of the via hole; removing the intermediary material layer from the via hole; forming the wiring region by etching a portion of the interlayer dielectric layer using the hard mask pattern as an etching mask; removing a portion of the stopper layer exposed by the via hole; and filling the via hole and the wiring region with a conductive material.
    • 使用双镶嵌工艺在半导体器件中形成金属布线层的方法。 一方面,在半导体器件中形成金属布线的方法包括:在其上形成有导电层的半导体衬底上形成阻挡层; 在所述阻挡层上形成层间绝缘层; 在所述层间介质层上形成硬掩模层; 在所述硬掩模层上形成第一光致抗蚀剂图案,所述第一光致抗蚀剂图案具有对应于所述导电层的第一开口; 使用第一光致抗蚀剂图案作为蚀刻掩模蚀刻硬掩模层和层间电介质层,以在阻挡层的一部分暴露的层间绝缘层中形成通孔; 去除第一光致抗蚀剂图案; 用中间材料层填充通孔; 蚀刻硬掩模层的一部分以形成限定布线区域的硬掩模图案,其中硬掩模图案包括与整个通孔或通孔的至少一部分重叠的第二开口; 从所述通孔中去除所述中间材料层; 通过使用硬掩模图案作为蚀刻掩模蚀刻层间电介质层的一部分来形成布线区域; 去除由通孔露出的阻挡层的一部分; 以及用导电材料填充所述通孔和所述布线区域。