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1. 发明授权

US09176999B2 Multiplication-based method for stitching results of predicate evaluation in column stores 有权
标题翻译：用于在列存储中拼接谓词评估结果的基于乘法的方法
公开(公告)号：US09176999B2
公开(公告)日：2015-11-03
申请号：US13614625
申请日：2012-09-13
申请人： Ronald J. Barber , Min-Soo Kim , Jae Gil Lee , Sam S. Lightstone , Guy M. Lohman , Lin Qiao , Vijayshankar Raman , Richard S. Sidle
发明人： Ronald J. Barber , Min-Soo Kim , Jae Gil Lee , Sam S. Lightstone , Guy M. Lohman , Lin Qiao , Vijayshankar Raman , Richard S. Sidle
IPC分类号： G06F17/30
CPC分类号： G06F17/30498 , G06F17/30315 , G06F17/30324
摘要： A system joins predicate evaluated column bitmaps having varying lengths. The system includes a column unifier for querying column values with a predicate and generating an indicator bit for each of the column values that is then joined with the respective column value. The system also includes a bitmap generator for creating a column-major linear bitmap from the column values and indicator bits. The column unifier also determines an offset between adjacent indicator bits. The system also includes a converter for multiplying the column-major linear bitmap with a multiplier to shift the indicator bits into consecutive positions in the linear bitmap.
摘要翻译：系统连接具有不同长度的谓词评估列位图。该系统包括列统一器，用于使用谓词查询列值，并为每个列值生成指示符位，然后与各个列值相结合。该系统还包括位图生成器，用于从列值和指示符位创建列主要的线性位图。列统一器还确定相邻指示符位之间的偏移。该系统还包括用于将列主要线性位图与乘法器相乘的转换器，以将指示符位移动到线性位图中的连续位置。

2. 发明授权

US08674402B2 Power semiconductor device and methods for fabricating the same 有权
标题翻译：功率半导体器件及其制造方法
公开(公告)号：US08674402B2
公开(公告)日：2014-03-18
申请号：US13443371
申请日：2012-04-10
申请人： Jin-myung Kim , Se-woong Oh , Jae-gil Lee , Young-chul Choi , Ho-cheol Jang
发明人： Jin-myung Kim , Se-woong Oh , Jae-gil Lee , Young-chul Choi , Ho-cheol Jang
IPC分类号： H01L27/092
CPC分类号： H01L29/66712 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/4238 , H01L29/7395 , H01L29/7802
摘要： A power semiconductor device includes: a drain region of a first conductive type; a drift region of a first conductive type formed on the drain region; a first body region of a second conductive type formed below an upper surface of the drift region; a second body region of a second conductive type formed below the upper surface of the drift region and in the first body region; a third body region of a second conductive type formed by protruding downwards from a lower end of the first body region; a source region of a first conductive type formed below the upper surface of the drift region and in the first body region; and a gate insulating layer formed on channel regions of the first body region and on the drift region between the first body regions.
摘要翻译：功率半导体器件包括：第一导电类型的漏极区域; 形成在漏区上的第一导电类型的漂移区; 形成在所述漂移区域的上表面下方的第二导电类型的第一体区; 第二导电类型的第二体区，形成在所述漂移区的上表面下方和所述第一体区中; 第二导电类型的第三体区域，从第一体区域的下端向下突出形成; 形成在所述漂移区域的上表面下方的所述第一导电类型的源极区域和所述第一体区域中; 以及栅极绝缘层，形成在第一体区的沟道区域和第一体区之间的漂移区上。

3. 发明申请

US20120299094A1 SEMICONDUCTOR DEVICE HAVING A SUPER JUNCTION STRUCTURE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：具有超结构结构的半导体器件及其制造方法
公开(公告)号：US20120299094A1
公开(公告)日：2012-11-29
申请号：US13354139
申请日：2012-01-19
申请人： Jae-gil LEE , Jin-myung KIM , Kwang-won LEE , Kyoung-deok KIM , Ho-cheol JANG
发明人： Jae-gil LEE , Jin-myung KIM , Kwang-won LEE , Kyoung-deok KIM , Ho-cheol JANG
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/0634 , H01L21/02381 , H01L21/02532 , H01L21/02634 , H01L21/2253 , H01L21/26513 , H01L21/324 , H01L29/0619 , H01L29/0688 , H01L29/0696 , H01L29/0878 , H01L29/0886 , H01L29/1095 , H01L29/66712 , H01L29/7811 , H01L29/7827
摘要： A semiconductor device having a super junction and a method of manufacturing the semiconductor device capable of obtaining a high breakdown voltage are provided, whereby charge balance of the super junction is further accurately controlled in the semiconductor device that is implemented by an N-type pillar and a P-type pillar. The semiconductor device includes a semiconductor substrate; and a blocking layer including a first conductive type pillar and a second conductive type pillar that extend in a vertical direction on the semiconductor substrate and that are alternately arrayed in a horizontal direction, wherein, in the blocking layer, a density profile of a first conductive type dopant may be uniform in the horizontal direction, and the density profile of the first conductive type dopant may vary in the vertical direction.
摘要翻译：提供具有超结的半导体器件和制造能够获得高击穿电压的半导体器件的方法，由此在由N型柱实现的半导体器件中进一步精确地控制超结的电荷平衡，一个P型支柱。半导体器件包括半导体衬底; 以及阻挡层，其包括在所述半导体基板上沿垂直方向延伸并且在水平方向上交替排列的第一导电型柱和第二导电型柱，其中，在所述阻挡层中，形成第一导电型型掺杂剂可以在水平方向上是均匀的，并且第一导电型掺杂剂的密度分布可以在垂直方向上变化。

4. 发明申请

US20120261715A1 POWER SEMICONDUCTOR DEVICE AND METHODS FOR FABRICATING THE SAME 有权
标题翻译：功率半导体器件及其制造方法
公开(公告)号：US20120261715A1
公开(公告)日：2012-10-18
申请号：US13443371
申请日：2012-04-10
申请人： Jin-myung KIM , Se-woong OH , Jae-gil LEE , Young-chul CHOI , Ho-cheol JANG
发明人： Jin-myung KIM , Se-woong OH , Jae-gil LEE , Young-chul CHOI , Ho-cheol JANG
IPC分类号： H01L27/092 , H01L21/8238 , H01L29/732
CPC分类号： H01L29/66712 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/4238 , H01L29/7395 , H01L29/7802
摘要： A power semiconductor device includes: a drain region of a first conductive type; a drift region of a first conductive type formed on the drain region; a first body region of a second conductive type formed below an upper surface of the drift region; a second body region of a second conductive type formed below the upper surface of the drift region and in the first body region; a third body region of a second conductive type formed by protruding downwards from a lower end of the first body region; a source region of a first conductive type formed below the upper surface of the drift region and in the first body region; and a gate insulating layer formed on channel regions of the first body region and on the drift region between the first body regions.
摘要翻译：功率半导体器件包括：第一导电类型的漏极区域; 形成在漏区上的第一导电类型的漂移区; 形成在所述漂移区域的上表面下方的第二导电类型的第一体区; 第二导电类型的第二体区，形成在所述漂移区的上表面下方和所述第一体区中; 第二导电类型的第三体区域，从第一体区域的下端向下突出形成; 形成在所述漂移区域的上表面下方的所述第一导电类型的源极区域和所述第一体区域中; 以及栅极绝缘层，形成在第一体区的沟道区域和第一体区之间的漂移区上。

5. 发明申请

US20120161274A1 SUPERJUNCTION SEMICONDUCTOR DEVICE 审中-公开
标题翻译：超级半导体器件
公开(公告)号：US20120161274A1
公开(公告)日：2012-06-28
申请号：US13325690
申请日：2011-12-14
申请人： Jae-gil Lee , Jin-young Jung , Ho-cheol Jang , Chong-man Yun
发明人： Jae-gil Lee , Jin-young Jung , Ho-cheol Jang , Chong-man Yun
IPC分类号： H01L29/06
CPC分类号： H01L29/0634
摘要： A superjunction semiconductor device includes an edge p pillar, an active region, and a termination region. The edge p pillar has a rectangular ring shape with rounded corners. The edge p pillar has an outer region surrounding the active region and an inner region on in the sides of the active region. The active region has active p pillars and active n pillars having vertical stripe shapes. The active p pillars and the active n pillars are alternately arranged horizontally in the active region. The termination region includes termination n pillars and termination p pillars alternately arranged around the edge p pillar.
摘要翻译：超结半导体器件包括边缘p柱，有源区和端接区。边缘p柱具有圆角的矩形环形。边缘p柱具有围绕有源区域的外部区域和有源区域的侧面中的内部区域。活性区域具有活性p柱和活性n柱，具有垂直条纹形状。有源P柱和主动n柱在水平地交替地布置在有源区中。终端区域包括交替布置在边缘p柱周围的终止n柱和端接p柱。

6. 发明申请

US20110192176A1 AIR CONDITIONER AND CONTROL METHOD THEREOF 审中-公开
标题翻译：空调及其控制方法
公开(公告)号：US20110192176A1
公开(公告)日：2011-08-11
申请号：US13006877
申请日：2011-01-14
申请人： Kyoung Rock KIM , Dong Seok Bae , Jae Gil Lee , Chang Seon Lee , Hyung Jin Kwon
发明人： Kyoung Rock KIM , Dong Seok Bae , Jae Gil Lee , Chang Seon Lee , Hyung Jin Kwon
IPC分类号： F25B1/00 , F25B41/00 , F25B41/04
CPC分类号： F25B13/00 , F24F3/065 , F25B30/06 , F25B2313/02741 , F25B2400/13 , F25B2400/16 , F25B2600/0251 , F25B2600/05 , F25B2600/2509 , F25B2600/2513 , F25B2700/1931 , F25B2700/21174
摘要： Disclosed herein is a water-source heat-pump type air conditioner in which a receiver is connected to a super-cooler or economizer, and a control method of the air conditioner to reduce the quantity of liquid refrigerant collected in the receiver during a cooling/heating overload operation. When a cooling/heating overload operation occurs, an electric expansion valve associated with the super-cooler or the economizer is opened by a predetermined opening degree, to bypass high-pressure liquid refrigerant collected in the receiver, thereby preventing a rapid pressure increase due to a great quantity of liquid refrigerant collected in the receiver.
摘要翻译：这里公开了一种水源热泵式空调机，其中接收器连接到超冷却器或节能器，以及空调器的控制方法，以减少在冷却/冷却器期间在接收器中收集的液体制冷剂的量，加热过载运行。当发生冷却/加热过载操作时，与超级冷却器或节能器相关联的电动膨胀阀以预定开度打开，以绕过收集在接收器中的高压液体制冷剂，从而防止由于在接收器中收集大量液体制冷剂。

7. 发明申请

US20070050384A1 Two-level n-gram index structure and methods of index building, query processing and index derivation 有权
标题翻译：二级n-gram索引结构和索引构建方法，查询处理和索引推导
公开(公告)号：US20070050384A1
公开(公告)日：2007-03-01
申请号：US11501265
申请日：2006-08-09
申请人： Kyu-Young Whang , Min-Soo Kim , Jae-Gil Lee , Min-Jae Lee
发明人： Kyu-Young Whang , Min-Soo Kim , Jae-Gil Lee , Min-Jae Lee
IPC分类号： G06F7/00
CPC分类号： G06F17/30622
摘要： Disclosed relates to a structure of two-level n-gram inverted index and methods of building the same, processing queries and deriving the index that reduce the size of n-gram inverted index and improves the query performance by eliminating the redundancy of the position information that exists in the n-gram inverted index. The inverted index of the present invention comprises a back-end inverted index using subsequences extracted from documents as a term and a front-end inverted index using n-grams extracted from the subsequences as a term. The back-end inverted index uses the subsequences of a specific length extracted from the documents to be overlapped with each other by n−1 (n: the length of n-gram) as a term and stores position information of the subsequences occurring in the documents in a posting list for the respective subsequences. The front-end inverted index uses the n-grams of a specific length extracted from the subsequences using a 1-sliding technique as a term and stores position information of the n-grams occurring in the subsequences in a posting list for the respective n-grams.
摘要翻译：本发明涉及二级n-gram反向索引的结构及其构建方法，处理查询和导出减少n-gram反向索引大小的索引，并通过消除位置信息的冗余来提高查询性能存在于n-gram倒排指数中。本发明的倒排索引包括使用从文档中提取的子序列作为术语的后端反向索引，以及使用从子序列提取的n-gram作为术语的前端反向索引。后端倒排索引使用从文档提取的特定长度的子序列作为项目彼此重叠，n-1（n：n-gram的长度）作为项，并存储发生在该文件中的子序列的位置信息相关子序列的发布列表中的文档。前端反向索引使用使用1-滑动技术作为术语从子序列中提取的特定长度的n克，并存储在子序列中出现的n个克数的位置信息，克。

8. 发明申请

US20070029597A1 HIGH-VOLTAGE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：高压半导体器件
公开(公告)号：US20070029597A1
公开(公告)日：2007-02-08
申请号：US11460755
申请日：2006-07-28
申请人： Jae-gil Lee , Kyu-hyun Lee , Ho-cheol Jang , Chong-man Yun
发明人： Jae-gil Lee , Kyu-hyun Lee , Ho-cheol Jang , Chong-man Yun
IPC分类号： H01L29/94
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/7802
摘要： Provided is a high-voltage semiconductor device which is constructed such that the quantity of P and N charges are balanced in the entire drift region thereby preventing the degradation of the device breakdown characteristics. The high-voltage semiconductor device comprises an active region including N pillars of N conductivity type and P pillars of P conductivity type, arranged alternately in a direction from a center portion of the active region to an outer portion thereof to encircle each other in a horizontal direction. The N and P pillars are formed in a closed shape.
摘要翻译：提供一种高电压半导体器件，其被构造成使得P和N电荷的量在整个漂移区域中平衡，从而防止器件击穿特性的劣化。高电压半导体器件包括N个导电型的N支柱和P导电型的P支柱的有源区域，其在从有源区域的中心部分到其外部部分的方向上交替布置以在水平方向上彼此包围方向。 N和P柱形成为封闭形状。

9. 发明申请

US20110097864A1 Method of Fabricating High-Voltage Semiconductor Device 有权
标题翻译：制造高压半导体器件的方法
公开(公告)号：US20110097864A1
公开(公告)日：2011-04-28
申请号：US12985093
申请日：2011-01-05
申请人： Jae-gil Lee , Chang-wook Kim , Ho-cheol Jang , Chong-man Yun
发明人： Jae-gil Lee , Chang-wook Kim , Ho-cheol Jang , Chong-man Yun
IPC分类号： H01L21/336
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/66333 , H01L29/66712 , H01L29/7395 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating a high-voltage semiconductor device includes the following steps: providing a semiconductor layer; forming a plurality of trenches in the semiconductor layer to define a plurality of pillars of a first conductivity type in the semiconductor layer between adjacent trenches, wherein the trenches extend from a top surface of the semiconductor layer toward a bottom surface of the semiconductor layer; forming a charge compensation layer of a second conductivity type over at least sidewalls of each trench to a predetermined thickness thereby forming a groove in each trench; and substantially filling each groove with a charge compensation plug of the first conductivity type.
摘要翻译：一种制造高电压半导体器件的方法包括以下步骤：提供半导体层; 在所述半导体层中形成多个沟槽以在相邻沟槽之间的所述半导体层中限定出第一导电类型的多个柱，其中所述沟槽从所述半导体层的顶表面朝向所述半导体层的底表面延伸; 在每个沟槽的至少侧壁上形成第二导电类型的电荷补偿层至预定厚度，从而在每个沟槽中形成凹槽; 并且用第一导电类型的电荷补偿塞基本上填充每个凹槽。

10. 发明申请

US20080111207A1 High-Voltage Semiconductor Device and Method of Fabricating the Same 有权
标题翻译：高压半导体器件及其制造方法
公开(公告)号：US20080111207A1
公开(公告)日：2008-05-15
申请号：US11939264
申请日：2007-11-13
申请人： Jae-gil Lee , Chang-wook Kim , Ho-cheol Jang , Chong-man Yun
发明人： Jae-gil Lee , Chang-wook Kim , Ho-cheol Jang , Chong-man Yun
IPC分类号： H01L23/00 , H01L21/44
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/66333 , H01L29/66712 , H01L29/7395 , H01L2924/0002 , H01L2924/00
摘要： A high-voltage semiconductor device includes a semiconductor layer having a plurality of pillars of a first conductivity type defined by a plurality of trenches which extend from a top surface of the semiconductor layer toward a bottom surface thereof. A charge compensation layer of a second conductivity type is disposed over at least sidewalls of each trench to a predetermined thickness to form a groove in each trench. A charge compensation plug of the first conductivity type substantially fills each groove.
摘要翻译：高压半导体器件包括具有多个由多个沟槽限定的第一导电类型的柱的半导体层，该多个沟槽从半导体层的顶表面向其底表面延伸。第二导电类型的电荷补偿层设置在每个沟槽的至少侧壁上至预定厚度，以在每个沟槽中形成凹槽。第一导电类型的电荷补偿插头基本上填充每个沟槽。

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