专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07682953B2 Method of forming p-type compound semiconductor layer 有权
标题翻译：形成p型化合物半导体层的方法
公开(公告)号：US07682953B2
公开(公告)日：2010-03-23
申请号：US12090305
申请日：2007-06-29
申请人： Ki Bum Nam , Hwa Mok Kim , James S. Speck
发明人： Ki Bum Nam , Hwa Mok Kim , James S. Speck
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L21/0254 , H01L21/02579 , H01L21/0262
摘要： A method of forming a p-type compound semiconductor layer includes increasing a temperature of a substrate loaded into a reaction chamber to a first temperature. A source gas of a Group III element, a source gas of a p-type impurity, and a source gas of nitrogen containing hydrogen are supplied into the reaction chamber to grow the p-type compound semiconductor layer. Then, the supply of the source gas of the Group III element and the source gas of the p-type impurity is stopped and the temperature of the substrate is lowered to a second temperature. The supply of the source gas of nitrogen containing hydrogen is stopped and drawn out at the second temperature, and the temperature of the substrate is lowered to room temperature using a cooling gas. Accordingly, hydrogen is prevented from bonding to the p-type impurity in the p-type compound semiconductor layer.
摘要翻译：形成p型化合物半导体层的方法包括将装载到反应室中的基板的温度升高到第一温度。将III族元素的源气体，p型杂质的源气体和含氮气的源气体供给到反应室中以使p型化合物半导体层生长。然后，停止供给III族元素的源气体和p型杂质的源气体，并将基板的温度降低到第二温度。供给含氮氢气的源气体在第二温度下停止并排出，并且使用冷却气体将基板的温度降至室温。因此，防止氢与p型化合物半导体层中的p型杂质结合。

2. 发明授权

US08470697B2 Method of forming p-type compound semiconductor layer 有权
标题翻译：形成p型化合物半导体层的方法
公开(公告)号：US08470697B2
公开(公告)日：2013-06-25
申请号：US12560891
申请日：2009-09-16
申请人： Ki Bum Nam , Hwa Mok Kim , James S. Speck
发明人： Ki Bum Nam , Hwa Mok Kim , James S. Speck
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L21/0254 , H01L21/02579 , H01L21/0262
摘要： A method of forming a p-type compound semiconductor layer includes increasing a temperature of a substrate loaded into a reaction chamber to a first temperature. A source gas of a Group III element, a source gas of a p-type impurity, and a source gas of nitrogen containing hydrogen are supplied into the reaction chamber to grow the p-type compound semiconductor layer. Then, the supply of the source gas of the Group III element and the source gas of the p-type impurity is stopped and the temperature of the substrate is lowered to a second temperature. The supply of the source gas of nitrogen containing hydrogen is stopped and drawn out at the second temperature, and the temperature of the substrate is lowered to room temperature using a cooling gas. Accordingly, hydrogen is prevented from bonding to the p-type impurity in the p-type compound semiconductor layer.
摘要翻译：形成p型化合物半导体层的方法包括将装载到反应室中的基板的温度升高到第一温度。将III族元素的源气体，p型杂质的源气体和含氮气的源气体供给到反应室中以使p型化合物半导体层生长。然后，停止供给III族元素的源气体和p型杂质的源气体，并将基板的温度降低到第二温度。供给含氮氢气的源气体在第二温度下停止并排出，并且使用冷却气体将基板的温度降至室温。因此，防止氢与p型化合物半导体层中的p型杂质结合。

3. 发明申请

US20090163002A1 METHOD OF FORMING P-TYPE COMPOUND SEMICONDUCTOR LAYER 有权
标题翻译：形成P型复合半导体层的方法
公开(公告)号：US20090163002A1
公开(公告)日：2009-06-25
申请号：US12090305
申请日：2007-06-29
申请人： Ki Bum Nam , Hwa Mok Kim , James S. Speck
发明人： Ki Bum Nam , Hwa Mok Kim , James S. Speck
IPC分类号： H01L21/22
CPC分类号： H01L33/007 , H01L21/0254 , H01L21/02579 , H01L21/0262
摘要： A method of forming a p-type compound semiconductor layer includes increasing a temperature of a substrate loaded into a reaction chamber to a first temperature. A source gas of a Group III element, a source gas of a p-type impurity, and a source gas of nitrogen containing hydrogen are supplied into the reaction chamber to grow the p-type compound semiconductor layer. Then, the supply of the source gas of the Group III element and the source gas of the p-type impurity is stopped and the temperature of the substrate is lowered to a second temperature. The supply of the source gas of nitrogen containing hydrogen is stopped and drawn out at the second temperature, and the temperature of the substrate is lowered to room temperature using a cooling gas. Accordingly, hydrogen is prevented from bonding to the p-type impurity in the p-type compound semiconductor layer.
摘要翻译：形成p型化合物半导体层的方法包括将装载到反应室中的基板的温度升高到第一温度。将III族元素的源气体，p型杂质的源气体和含氮气的源气体供给到反应室中以使p型化合物半导体层生长。然后，停止供给III族元素的源气体和p型杂质的源气体，并将基板的温度降低到第二温度。供给含氮氢气的源气体在第二温度下停止并排出，并且使用冷却气体将基板的温度降至室温。因此，防止氢与p型化合物半导体层中的p型杂质结合。

4. 发明授权

US08748864B2 Light emitting device and method of fabricating the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08748864B2
公开(公告)日：2014-06-10
申请号：US13304814
申请日：2011-11-28
申请人： Woo Chul Kwak , Soon Ho An , Hwa Mok Kim , Eun Jin Kim , Jae Hoon Song
发明人： Woo Chul Kwak , Soon Ho An , Hwa Mok Kim , Eun Jin Kim , Jae Hoon Song
IPC分类号： H01L33/04 , H01L29/06
CPC分类号： H01L33/08 , B82Y20/00 , B82Y30/00 , H01L33/18 , H01L33/38 , H01L33/502 , H01L2933/0091
摘要： A light emitting device includes a metal backing layer, a reflective electrode layer disposed on the metal backing layer, and a plurality of nanorods disposed on the reflective electrode layer. Each nanorod includes a p-semiconductor layer, an active layer, and an n-semiconductor layer, which are sequentially stacked on the reflective electrode layer. The light emitting device further includes an anti-reflection electrode layer disposed on the nanorods, and quantum dots disposed between the nanorods. The method includes sequentially growing the n-semiconductor layer, the active layer, and the p-semiconductor layer on a substrate; forming the nanorods by etching the p-semiconductor layer using a mask pattern; sequentially forming the reflective electrode layer and the metal backing layer on the p-semiconductor layer and then removing the substrate; disposing quantum dots between the nanorods; and forming the anti-reflection electrode layer on the nanorods.
摘要翻译：发光器件包括金属背衬层，设置在金属背衬层上的反射电极层和设置在反射电极层上的多个纳米棒。每个纳米棒包括依次堆叠在反射电极层上的p半导体层，有源层和n半导体层。发光装置还包括设置在纳米棒上的抗反射电极层和设置在纳米棒之间的量子点。该方法包括在衬底上依次生长n半导体层，有源层和p半导体层; 通过使用掩模图案蚀刻p半导体层来形成纳米棒; 在p-半导体层上依次形成反射电极层和金属背衬层，然后去除衬底; 在纳米棒之间设置量子点; 并在纳米棒上形成抗反射电极层。

5. 发明授权

US08624159B2 Method of fabricating light emitting diode using laser lift-off technique and laser lift-off apparatus having heater 有权
标题翻译：使用激光剥离技术制造发光二极管的方法和具有加热器的激光剥离装置
公开(公告)号：US08624159B2
公开(公告)日：2014-01-07
申请号：US13410884
申请日：2012-03-02
申请人： Chang Youn Kim , Joon Hee Lee , Jong Kyun You , Hwa Mok Kim
发明人： Chang Youn Kim , Joon Hee Lee , Jong Kyun You , Hwa Mok Kim
IPC分类号： B23K26/02
CPC分类号： H01L33/0079
摘要： An approach is provided for fabricating a light emitting diode using a laser lift-off apparatus. The approach includes growing an epitaxial layer including a first conductive-type compound semiconductor layer, an active layer and a second conductive-type compound semiconductor layer on a first substrate, bonding a second substrate, having a different thermal expansion coefficient from that of the first substrate, to the epitaxial layers at a first temperature of the first substrate higher than a room temperature, and separating the first substrate from the epitaxial layer by irradiating a laser beam through the first substrate at a second temperature of the first substrate higher than the room temperature but not more than the first temperature.
摘要翻译：提供了一种使用激光剥离装置制造发光二极管的方法。该方法包括在第一衬底上生长包括第一导电型化合物半导体层，有源层和第二导电型化合物半导体层的外延层，将具有不同于第一衬底的热膨胀系数不同的第二衬底衬底，在第一衬底的高于室温的第一温度下到外延层，并且通过在第一衬底的高于室的第二温度下照射穿过第一衬底的激光束将第一衬底与外延层分离温度不高于第一温度。

6. 发明授权

US08288781B2 Light emitting device and method of fabricating the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08288781B2
公开(公告)日：2012-10-16
申请号：US12570456
申请日：2009-09-30
申请人： Won Cheol Seo , Joon Hee Lee , Jong Kyun You , Chang Youn Kim , Jin Cheul Shin , Hwa Mok Kim , Jang Woo Lee , Yeo Jin Yoon , Jong Kyu Kim
发明人： Won Cheol Seo , Joon Hee Lee , Jong Kyun You , Chang Youn Kim , Jin Cheul Shin , Hwa Mok Kim , Jang Woo Lee , Yeo Jin Yoon , Jong Kyu Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L25/0753 , H01L27/156 , H01L33/007 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2933/0058 , H01L2933/0066 , H01L2924/00
摘要： Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.
摘要翻译：公开了一种发光器件及其制造方法。发光器件包括衬底。多个发光单元设置在基板的顶部上以彼此间隔开。每个发光单元包括第一上半导体层，有源层和第二下半导体层。反射金属层位于基板和发光单元之间。防止反射金属层暴露于外部。

7. 发明申请

US20120021546A1 Method of fabricating semiconductor substrate and method of fabricating light emitting device 有权
公开(公告)号：US20120021546A1
公开(公告)日：2012-01-26
申请号：US13137124
申请日：2011-07-21
申请人： Chang Youn Kim , Shiro Sakai , Hwa Mok Kim , Joon Hee Lee , Soo Young Moon , Kyoung Wan Kim
发明人： Chang Youn Kim , Shiro Sakai , Hwa Mok Kim , Joon Hee Lee , Soo Young Moon , Kyoung Wan Kim
IPC分类号： H01L33/32
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/0254 , H01L21/02639 , H01L33/005 , H01L33/0079
摘要： The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.

8. 发明授权

US07816700B2 Light emitting diode employing an array of nanorods and method of fabricating the same 有权
标题翻译：采用纳米棒阵列的发光二极管及其制造方法
公开(公告)号：US07816700B2
公开(公告)日：2010-10-19
申请号：US12063674
申请日：2006-06-05
申请人： Hwa Mok Kim
发明人： Hwa Mok Kim
IPC分类号： H01L29/26
CPC分类号： H01L33/08 , H01L33/20 , H01L33/38
摘要： Disclosed are a light emitting diode employing an array of nanorods and a method of fabricating the same. The light emitting diode comprises an array of semiconductor nanorods positioned on a substrate. An upper electrode layer is deposited on the array of the nanorods such that an empty space remains between adjacent ones of the nanorods. Since the space between adjacent ones of the nanorods is not filled with an insulating material, the light extraction efficiency of a light emitting diode can be improved and a method of fabricating the light emitting diode can be simplified.
摘要翻译：公开了采用纳米棒阵列的发光二极管及其制造方法。发光二极管包括位于衬底上的半导体纳米棒阵列。上部电极层沉积在纳米棒的阵列上，使得在相邻的纳米棒之间留有空的空间。由于相邻的纳米棒之间的空间没有被绝缘材料填充，所以可以提高发光二极管的光提取效率，并且可以简化制造发光二极管的方法。

9. 发明申请

US20080210956A1 Light Emitting Diode Employing an Array of Nanorods and Method of Fabricating the Same 有权
标题翻译：使用纳米棒阵列的发光二极管及其制造方法
公开(公告)号：US20080210956A1
公开(公告)日：2008-09-04
申请号：US12063674
申请日：2006-06-05
申请人： Hwa Mok Kim
发明人： Hwa Mok Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L33/20 , H01L33/38
摘要： Disclosed are a light emitting diode employing an array of nanorods and a method of fabricating the same. The light emitting diode comprises an array of semiconductor nanorods positioned on a substrate. An upper electrode layer is deposited on the array of the nanorods such that an empty space remains between adjacent ones of the nanorods. Since the space between adjacent ones of the nanorods is not filled with an insulating material, the light extraction efficiency of a light emitting diode can be improved and a method of fabricating the light emitting diode can be simplified.
摘要翻译：公开了采用纳米棒阵列的发光二极管及其制造方法。发光二极管包括位于衬底上的半导体纳米棒阵列。上部电极层沉积在纳米棒的阵列上，使得在相邻的纳米棒之间留有空的空间。由于相邻的纳米棒之间的空间没有被绝缘材料填充，所以可以提高发光二极管的光提取效率，并且可以简化制造发光二极管的方法。

10. 发明申请

US20080191191A1 Light Emitting Diode of a Nanorod Array Structure Having a Nitride-Based Multi Quantum Well 审中-公开
标题翻译：具有氮化物的多量子阱的纳米棒阵列结构的发光二极管
公开(公告)号：US20080191191A1
公开(公告)日：2008-08-14
申请号：US11993966
申请日：2005-06-27
申请人： Hwa Mok Kim
发明人： Hwa Mok Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01L33/08 , H01L33/18
摘要： The present invention relates to a GaN light emitting diode. The GaN LED according to the present invention uses a GaN nanorod in which a multi quantum well formed by alternately stacking a plurality of InGaN layers and a plurality of GaN barriers is inserted into a p-n junction interface of a p-n junction GaN nanorod so that an n-type GaN nanorod, the multi quantum well, and a p-type GaN nanorod are sequentially arranged in a longitudinal direction. By arranging such GaN nanorods in an array, it is possible to provide an LED with higher luminance and higher light-emission efficiency as compared with a conventional laminated-film type GaN LED. It is possible to implement multi-color light with high luminance at a chip level by adjusting the amount of In and/or the thickness of the InGaN layers.
摘要翻译：本发明涉及GaN发光二极管。根据本发明的GaN LED使用GaN纳米棒，其中通过交替堆叠多个InGaN层和多个GaN势垒形成的多量子阱插入到pn结GaN纳米棒的pn结界面中，使得n 型GaN纳米棒，多量子阱和p型GaN纳米棒沿纵向顺序排列。通过将阵列中的这种GaN纳米棒排列，与传统的层叠膜型GaN LED相比，可以提供具有更高亮度和更高发光效率的LED。通过调整In的量和/或InGaN层的厚度，可以在芯片级别实现高亮度的多色光。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式