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1. 发明授权

US08417362B2 Advanced process control for semiconductor processing 有权
标题翻译：先进的半导体处理过程控制
公开(公告)号：US08417362B2
公开(公告)日：2013-04-09
申请号：US12426690
申请日：2009-04-20
申请人： Hsueh Chi Shen , Chun-Hsien Lin
发明人： Hsueh Chi Shen , Chun-Hsien Lin
IPC分类号： G05B13/02 , G06F19/00
CPC分类号： G05B15/02 , G05B2219/37576
摘要： A computer comprising a recordable medium on which is stored instructions for at least one model-based, run-to-run controller routine is provided. The computer includes instructions to receive a first dataset regarding a first wafer after a first process, to determine a process parameter for the first process for a second wafer using the first dataset; and to determine a second process parameter for a second process for the first wafer using the first dataset. In an embodiment, the first process is an etch process. In an embodiment, the second process is a planarization process.
摘要翻译：提供了一种包括可记录介质的计算机，其上存储有用于至少一个基于模型的运行控制器程序的指令。计算机包括在第一处理之后接收关于第一晶片的第一数据集的指令，以使用第一数据集确定用于第二晶片的第一处理的处理参数; 并且使用第一数据集确定用于第一晶片的第二处理的第二处理参数。在一个实施例中，第一工艺是蚀刻工艺。在一个实施例中，第二过程是平坦化处理。

2. 发明授权

US07437404B2 System and method for improving equipment communication in semiconductor manufacturing equipment 有权
标题翻译：改进半导体制造设备设备通信的系统和方法
公开(公告)号：US07437404B2
公开(公告)日：2008-10-14
申请号：US10851592
申请日：2004-05-20
申请人： Hsueh Chi Shen
发明人： Hsueh Chi Shen
IPC分类号： G06F15/16
CPC分类号： H04L45/00 , G05B2219/33209 , H04L41/0213 , H04L41/024 , H04L41/046 , H04L43/00
摘要： Provided is a system and method for connecting semiconductor manufacturing equipment to a host and one or more clients. In one example, the system includes an application queue, a host queue, and an equipment queue configured to hold messages received from and sent to an application agent, a host agent, and an equipment agent, respectively. A management information base may be configured to store information identifying a first virtual channel linking the client with the manufacturing equipment via the application queue and the equipment queue, and a second virtual channel linking the host with the manufacturing equipment via the host queue and the equipment queue. A dispatcher may be configured to use information from the management information base to route messages between the client and the manufacturing equipment via the first virtual channel and to route messages between the host and the manufacturing equipment via the second virtual channel.
摘要翻译：提供了一种用于将半导体制造设备连接到主机和一个或多个客户端的系统和方法。在一个示例中，系统包括应用队列，主机队列和被配置为分别保存从应用代理，主机代理和设备代理接收和发送的消息的设备队列。管理信息库可以被配置为存储识别通过应用队列和设备队列链接客户端与制造设备的第一虚拟通道的信息，以及经由主机队列和设备将主机与制造设备相链接的第二虚拟通道队列。调度器可以被配置为使用来自管理信息库的信息经由第一虚拟信道在客户端和制造设备之间路由消息，并且经由第二虚拟信道在主机和制造设备之间路由消息。

3. 发明申请

US20080233662A1 Advanced Process Control for Semiconductor Processing 有权
标题翻译：先进的半导体处理过程控制
公开(公告)号：US20080233662A1
公开(公告)日：2008-09-25
申请号：US11689050
申请日：2007-03-21
申请人： Hsueh Chi Shen , Chun-Hsien Lin
发明人： Hsueh Chi Shen , Chun-Hsien Lin
IPC分类号： H01L21/66 , G06F19/00
CPC分类号： G05B15/02 , G05B2219/37576
摘要： An advanced process control (APC) method for semiconductor fabrication is provided. A first substrate and a second substrate are provided. The first substrate and the second substrate include a dielectric layer. A first etch process parameter for the first substrate is determined. A trench is etched in the dielectric layer of the first substrate using the first etch process parameter. At least one aspect of the etched trench of the first substrate is measured. A second etch process parameter for the second substrate is determined using the measured aspect of the etched trench of the first substrate. A planarization process parameter for the first substrate is determined also using the measured aspect of the etched trench of the first substrate.
摘要翻译：提供了一种用于半导体制造的先进的工艺控制（APC）方法。提供第一基板和第二基板。第一基板和第二基板包括电介质层。确定第一衬底的第一蚀刻工艺参数。使用第一蚀刻工艺参数在第一衬底的介电层中蚀刻沟槽。测量第一衬底的蚀刻沟槽的至少一个方面。使用第一衬底的蚀刻沟槽的测量方面来确定用于第二衬底的第二蚀刻工艺参数。还使用第一衬底的蚀刻沟槽的测量方面来确定第一衬底的平坦化处理参数。

4. 发明授权

US06980873B2 System and method for real-time fault detection, classification, and correction in a semiconductor manufacturing environment 失效
标题翻译：在半导体制造环境中进行实时故障检测，分类和校正的系统和方法
公开(公告)号：US06980873B2
公开(公告)日：2005-12-27
申请号：US10831064
申请日：2004-04-23
申请人： Hsueh Chi Shen
发明人： Hsueh Chi Shen
IPC分类号： G05B23/02 , G06F19/00
CPC分类号： G05B23/024 , G05B2219/37519
摘要： A system and method for detecting a fault and identifying a remedy for the fault in real-time in a semiconductor product manufacturing facility are provided. In one example, the method includes importing data from a manufacturing device and data representing a plurality of different manufacturing devices into an analysis tool. The imported data is analyzed using the analysis tool to determine if a fault exists in the manufacturing device's operation and, if a fault exists, the fault is classified and a remedy for the fault is identified based at least partly on the classification. Configuration data used to control the manufacturing device may be updated, and the update may apply the remedy to the configuration information. The manufacturing device's operation may then be modified using the updated configuration data.
摘要翻译：提供了一种用于在半导体产品制造设施中实时检测故障并识别故障补救的系统和方法。在一个示例中，该方法包括将来自制造设备的数据和表示多个不同制造设备的数据导入到分析工具中。使用分析工具对导入的数据进行分析，以确定制造设备的操作中是否存在故障，如果存在故障，则对故障进行分类，并至少部分根据分类识别故障的补救措施。可以更新用于控制制造装置的配置数据，并且更新可以将补救应用于配置信息。然后可以使用更新的配置数据修改制造设备的操作。

5. 发明申请

US20090248187A1 ADVANCED PROCESS CONTROL FOR SEMICONDUCTOR PROCESSING 有权
标题翻译：用于半导体加工的先进工艺控制
公开(公告)号：US20090248187A1
公开(公告)日：2009-10-01
申请号：US12426690
申请日：2009-04-20
申请人： Hsueh Chi Shen , Chun-Hsien Lin
发明人： Hsueh Chi Shen , Chun-Hsien Lin
IPC分类号： G06F17/00
CPC分类号： G05B15/02 , G05B2219/37576
摘要： A computer comprising a recordable medium on which is stored instructions for at least one model-based, run-to-run controller routine is provided. The computer includes instructions to receive a first dataset regarding a first wafer after a first process, to determine a process parameter for the first process for a second wafer using the first dataset; and to determine a second process parameter for a second process for the first wafer using the first dataset. In an embodiment, the first process is an etch process. In an embodiment, the second process is a planarization process.
摘要翻译：提供了一种包括可记录介质的计算机，其上存储有用于至少一个基于模型的运行控制器程序的指令。计算机包括在第一处理之后接收关于第一晶片的第一数据集的指令，以使用第一数据集确定用于第二晶片的第一处理的处理参数; 并且使用第一数据集确定用于第一晶片的第二处理的第二处理参数。在一个实施例中，第一工艺是蚀刻工艺。在一个实施例中，第二过程是平坦化处理。

6. 发明申请

US20080140590A1 PROCESS CONTROL INTEGRATION SYSTEMS AND METHODS 审中-公开
标题翻译：过程控制集成系统和方法
公开(公告)号：US20080140590A1
公开(公告)日：2008-06-12
申请号：US11609368
申请日：2006-12-12
申请人： Hsueh-Chi Shen
发明人： Hsueh-Chi Shen
IPC分类号： G06F15/18 , G06F17/00
CPC分类号： G05B19/41875 , G05B2219/32182 , G05B2219/32198 , G05B2219/35499 , G05B2219/45031 , Y02P90/22
摘要： Systems of process control integration are provided. An embodiment of a system of process control integration comprises multiple process control systems (PCSs) and a supervisor controller. Each PCS calculates at least one process parameter based on at least one process model, a process target and an acceptable range. The supervisor controller couples to and coordinates the PCSs. A semiconductor fabrication operation is performed on a wafer based on the process parameter.
摘要翻译：提供过程控制集成系统。过程控制集成系统的实施例包括多个过程控制系统（PCS）和主管控制器。每个PCS基于至少一个过程模型，过程目标和可接受的范围来计算至少一个过程参数。主管控制器耦合到PCS并协调PCS。基于工艺参数在晶片上进行半导体制造操作。

7. 发明申请

US20060122728A1 Method and system for thermal process control 有权
标题翻译：热过程控制方法和系统
公开(公告)号：US20060122728A1
公开(公告)日：2006-06-08
申请号：US11001767
申请日：2004-12-02
申请人： Yung-Chih Chang , Cheng-I Sun , Chun-I Kuo , Fu-Kun Yeh , Hsueh-Chi Shen
发明人： Yung-Chih Chang , Cheng-I Sun , Chun-I Kuo , Fu-Kun Yeh , Hsueh-Chi Shen
IPC分类号： G06F19/00
CPC分类号： G05B17/02 , H01L21/67248
摘要： A thermal process system. The thermal process system comprises a thermal processor, a metrology tool, and a controller. The thermal processor performs a thermal process as defined by a heating model to form a film on a wafer surface. The metrology tool, interfaced with the thermal processor, inspects thickness of the film. The controller, coupled with the thermal processor and the metrology tool, generates the heating model of the thermal processor and calibrates the heating model according to a preset slope coefficient matrix and the measured thickness.
摘要翻译：热处理系统。热处理系统包括热处理器，计量工具和控制器。热处理器执行由加热模型定义的热处理，以在晶片表面上形成膜。与热处理器接口的计量工具检查胶片的厚度。控制器与热处理器和计量工具相结合，产生热处理器的加热模型，并根据预设的斜率系数矩阵和测量厚度校准加热模型。

8. 发明授权

US07751908B2 Method and system for thermal process control 有权
标题翻译：热过程控制方法和系统
公开(公告)号：US07751908B2
公开(公告)日：2010-07-06
申请号：US11001767
申请日：2004-12-02
申请人： Yung-Chih Chang , Cheng-I Sun , Chun-I Kuo , Fu-Kun Yeh , Hsueh-Chi Shen
发明人： Yung-Chih Chang , Cheng-I Sun , Chun-I Kuo , Fu-Kun Yeh , Hsueh-Chi Shen
IPC分类号： G06F19/00 , G05D7/00
CPC分类号： G05B17/02 , H01L21/67248
摘要： A thermal process system. The thermal process system comprises a thermal processor, a metrology tool, and a controller. The thermal processor performs a thermal process as defined by a heating model to form a film on a wafer surface. The metrology tool, interfaced with the thermal processor, inspects thickness of the film. The controller, coupled with the thermal processor and the metrology tool, generates the heating model of the thermal processor and calibrates the heating model according to a preset slope coefficient matrix and the measured thickness.
摘要翻译：热处理系统。热处理系统包括热处理器，计量工具和控制器。热处理器执行由加热模型定义的热处理，以在晶片表面上形成膜。与热处理器接口的计量工具检查胶片的厚度。控制器与热处理器和计量工具相结合，产生热处理器的加热模型，并根据预设的斜率系数矩阵和测量厚度校准加热模型。

9. 发明授权

US07534725B2 Advanced process control for semiconductor processing 有权
标题翻译：先进的半导体处理过程控制
公开(公告)号：US07534725B2
公开(公告)日：2009-05-19
申请号：US11689050
申请日：2007-03-21
申请人： Hsueh Chi Shen , Chun-Hsien Lin
发明人： Hsueh Chi Shen , Chun-Hsien Lin
IPC分类号： H01L21/302
CPC分类号： G05B15/02 , G05B2219/37576
摘要： An advanced process control (APC) method for semiconductor fabrication is provided. A first substrate and a second substrate are provided. The first substrate and the second substrate include a dielectric layer. A first etch process parameter for the first substrate is determined. A trench is etched in the dielectric layer of the first substrate using the first etch process parameter. At least one aspect of the etched trench of the first substrate is measured. A second etch process parameter for the second substrate is determined using the measured aspect of the etched trench of the first substrate. A planarization process parameter for the first substrate is determined also using the measured aspect of the etched trench of the first substrate.
摘要翻译：提供了一种用于半导体制造的先进工艺控制（APC）方法。提供第一基板和第二基板。第一基板和第二基板包括电介质层。确定第一衬底的第一蚀刻工艺参数。使用第一蚀刻工艺参数在第一衬底的介电层中蚀刻沟槽。测量第一衬底的蚀刻沟槽的至少一个方面。使用第一衬底的蚀刻沟槽的测量方面来确定用于第二衬底的第二蚀刻工艺参数。还使用第一衬底的蚀刻沟槽的测量方面来确定第一衬底的平坦化处理参数。

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