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    • 1. 发明申请
    • PHOTO DETECTOR AND METHOD FOR FABRICATING THE SAME
    • 照片检测器及其制造方法
    • US20110316830A1
    • 2011-12-29
    • US13227455
    • 2011-09-07
    • Yu-Min LinHsin-Li ChenFeng-Yuan Gan
    • Yu-Min LinHsin-Li ChenFeng-Yuan Gan
    • G09G5/10H01L31/12H01L31/18
    • H01L31/12G02F1/13338G02F2001/13312G06F3/0412G09G3/20G09G2300/0408G09G2360/144H01L31/145H01L31/18
    • A photo detector is disclosed. The photo detector includes a substrate, a first patterned semiconductor layer, a dielectric layer, a patterned conductive layer, an inter-layer dielectric, a second patterned semiconductor layer, two first electrodes disposed on the inter-layer dielectric and two second electrodes disposed on portions of the second semiconductor layer. The first patterned semiconductor layer having a first doping region and a second doping region is disposed on a transistor region. The dielectric layer is disposed to cover the substrate and the first semiconductor layer, the patterned conductive layer is disposed on the dielectric layer, and the inter-layer dielectric having at least two openings adapted to expose the first doping region and the second doping region is disposed to cover the dielectric layer. The second patterned semiconductor layer is disposed on a photosensitive region and the first electrodes are electrically connected to the first patterned semiconductor layer.
    • 公开了一种光电检测器。 光检测器包括衬底,第一图案化半导体层,电介质层,图案化导电层,层间电介质,第二图案化半导体层,设置在层间电介质上的两个第一电极和设置在层间电介质上的两个第二电极 第二半导体层的部分。 具有第一掺杂区域和第二掺杂区域的第一图案化半导体层设置在晶体管区域上。 介电层设置成覆盖基板和第一半导体层,图案化的导电层设置在电介质层上,并且具有适于暴露第一掺杂区域和第二掺杂区域的至少两个开口的层间电介质是 被设置成覆盖电介质层。 第二图案化半导体层设置在光敏区域上,并且第一电极电连接到第一图案化半导体层。
    • 2. 发明申请
    • TOUCH-SENSITIVE LIQUID CRYSTAL DISPLAY DEVICE
    • 触感液晶显示装置
    • US20110025969A1
    • 2011-02-03
    • US12844803
    • 2010-07-27
    • HSIN-LI CHENWEN-HSIUNG LIU
    • HSIN-LI CHENWEN-HSIUNG LIU
    • G02F1/1343
    • G06F3/047G02F1/13338G06F3/0412
    • A in-cell touch-sensitive liquid crystal display device (LCD) includes a first substrate, a second substrate opposite to the first substrate, a liquid crystal layer disposed between the first substrate and the second substrate, a first sensing line and a second sensing line disposed on the second substrate, a first conductive layer and a second conductive layer electrically connected to the first sensing line and the second sensing line, respectively, and electrically isolated from each other by a gap existing therebetween. The in-cell touch-sensitive LCD device further includes a spacer disposed on the first substrate and corresponding to the gap. The spacer is electrically connected to the first conductive layer and the second conductive layer in response to an external pressure.
    • 单元内触摸式液晶显示装置(LCD)包括第一基板,与第一基板相对的第二基板,设置在第一基板和第二基板之间的液晶层,第一感测线和第二感测 设置在第二基板上的第一导电层和第二导电层,第一导电层和第二导电层分别电连接到第一感测线和第二感测线,并且通过它们之间的间隙彼此电隔离。 单元内触敏LCD装置还包括设置在第一基板上并对应于间隙的间隔件。 间隔物响应于外部压力而电连接到第一导电层和第二导电层。
    • 5. 发明申请
    • PHOTO DETECTOR AND METHOD FOR FABRICATING THE SAME
    • 照片检测器及其制造方法
    • US20090027371A1
    • 2009-01-29
    • US11943602
    • 2007-11-21
    • Yu-Min LinHsin-Li ChenFeng-Yuan Gan
    • Yu-Min LinHsin-Li ChenFeng-Yuan Gan
    • G09G3/00H01L31/18H01L31/062
    • H01L31/12G02F1/13338G02F2001/13312G06F3/0412G09G3/20G09G2300/0408G09G2360/144H01L31/145H01L31/18
    • A photo detector is disclosed. The photo detector includes a substrate, a first patterned semiconductor layer with a first state, a dielectric layer, a patterned conductive layer, an inter-layer dielectric, a second patterned semiconductor layer with a second state, two first electrodes disposed on the inter-layer dielectric and two second electrodes disposed on portions of the second semiconductor layer. The first patterned semiconductor layer having a first doping region and a second doping region is disposed on a transistor region of the substrate. The dielectric layer is disposed to cover the substrate and the first semiconductor layer, the patterned conductive layer is disposed on the dielectric layer, and the inter-layer dielectric having at least two openings adapted to expose the first doping region and the second doping region is disposed to cover the dielectric layer. The second patterned semiconductor layer is disposed on a photosensitive region and the first electrodes are electrically connected to the first patterned semiconductor layer.
    • 公开了一种光电检测器。 光检测器包括基板,具有第一状态的第一图案化半导体层,电介质层,图案化导电层,层间电介质,具有第二状态的第二图案化半导体层,设置在第二状态的第二图案化半导体层, 层电介质和设置在第二半导体层的部分上的两个第二电极。 具有第一掺杂区域和第二掺杂区域的第一图案化半导体层设置在衬底的晶体管区域上。 介电层设置成覆盖基板和第一半导体层,图案化的导电层设置在电介质层上,并且具有适于暴露第一掺杂区和第二掺杂区的至少两个开口的层间电介质是 被设置成覆盖电介质层。 第二图案化半导体层设置在光敏区域上,并且第一电极电连接到第一图案化半导体层。
    • 8. 发明授权
    • Read-only-memory array with coding after metallization
    • 只读存储器阵列,具有金属化后的编码
    • US5561624A
    • 1996-10-01
    • US495761
    • 1995-06-26
    • Hsin-Li ChenTe-Sun WuKai-Chi Hsieh
    • Hsin-Li ChenTe-Sun WuKai-Chi Hsieh
    • G11C17/12H01L27/112G11C17/00
    • G11C17/126H01L27/112
    • A ROM array with coding after metallization comprises a plurality of first bit lines, a plurality of second bit lines, a plurality of third bit lines, a plurality of word lines, a plurality of first control lines, a plurality of second control lines and a plurality of selecting lines. Memory cells of the ROM array are formed by the intersection of the word lines and the first and second bit lines, wherein the word lines are polysilicon gates and the bit lines are drain/source diffusion regions. The third bit lines are metal lines above the first bit lines. The third bit lines are not wide enough to cover spacings between the first and second bit lines, thus exposing spaces for code implantation. The first and second control lines intersect the first and second bit lines to form a number of switches for controlling data reading paths to The memory cells. The positions and ON/OFF states of the switches are designed to provide at least two data reading paths to each memory cell. Thus, the sensing currents in the bit lines are increased and become more uniform.
    • 在金属化之后编码的ROM阵列包括多个第一位线,多个第二位线,多个第三位线,多个字线,多个第一控制线,多个第二控制线和 多条选线。 ROM阵列的存储单元由字线和第一和第二位线的交点形成,其中字线是多晶硅栅极,位线是漏极/源极扩散区域。 第三位线是位于第一位线之上的金属线。 第三位线的宽度不足以覆盖第一和第二位线之间的间隔,从而暴露用于代码注入的空间。 第一和第二控制线与第一和第二位线相交以形成用于控制到存储单元的数据读取路径的多个开关。 开关的位置和开/关状态被设计为向每个存储单元提供至少两条数据读取路径。 因此,位线中的感测电流增加并变得更均匀。
    • 9. 发明授权
    • Display panel
    • 显示面板
    • US08599181B2
    • 2013-12-03
    • US13227455
    • 2011-09-07
    • Yu-Min LinHsin-Li ChenFeng-Yuan Gan
    • Yu-Min LinHsin-Li ChenFeng-Yuan Gan
    • G06F3/038
    • H01L31/12G02F1/13338G02F2001/13312G06F3/0412G09G3/20G09G2300/0408G09G2360/144H01L31/145H01L31/18
    • A photo detector is disclosed. The photo detector includes a substrate, a first patterned semiconductor layer, a dielectric layer, a patterned conductive layer, an inter-layer dielectric, a second patterned semiconductor layer, two first electrodes disposed on the inter-layer dielectric and two second electrodes disposed on portions of the second semiconductor layer. The first patterned semiconductor layer having a first doping region and a second doping region is disposed on a transistor region. The dielectric layer is disposed to cover the substrate and the first semiconductor layer, the patterned conductive layer is disposed on the dielectric layer, and the inter-layer dielectric having at least two openings adapted to expose the first doping region and the second doping region is disposed to cover the dielectric layer. The second patterned semiconductor layer is disposed on a photosensitive region and the first electrodes are electrically connected to the first patterned semiconductor layer.
    • 公开了一种光电检测器。 光检测器包括衬底,第一图案化半导体层,电介质层,图案化导电层,层间电介质,第二图案化半导体层,设置在层间电介质上的两个第一电极和设置在层间电介质上的两个第二电极 第二半导体层的部分。 具有第一掺杂区域和第二掺杂区域的第一图案化半导体层设置在晶体管区域上。 介电层设置成覆盖基板和第一半导体层,图案化的导电层设置在电介质层上,并且具有适于暴露第一掺杂区域和第二掺杂区域的至少两个开口的层间电介质是 被设置成覆盖电介质层。 第二图案化半导体层设置在光敏区域上,并且第一电极电连接到第一图案化半导体层。
    • 10. 发明授权
    • Photo detector and method for fabricating the same
    • 光电检测器及其制造方法
    • US08054304B2
    • 2011-11-08
    • US11943602
    • 2007-11-21
    • Yu-Min LinHsin-Li ChenFeng-Yuan Gan
    • Yu-Min LinHsin-Li ChenFeng-Yuan Gan
    • G06F3/038G09G5/00
    • H01L31/12G02F1/13338G02F2001/13312G06F3/0412G09G3/20G09G2300/0408G09G2360/144H01L31/145H01L31/18
    • A photo detector is disclosed. The photo detector includes a substrate, a first patterned semiconductor layer with a first state, a dielectric layer, a patterned conductive layer, an inter-layer dielectric, a second patterned semiconductor layer with a second state, two first electrodes disposed on the inter-layer dielectric and two second electrodes disposed on portions of the second semiconductor layer. The first patterned semiconductor layer having a first doping region and a second doping region is disposed on a transistor region of the substrate. The dielectric layer is disposed to cover the substrate and the first semiconductor layer, the patterned conductive layer is disposed on the dielectric layer, and the inter-layer dielectric having at least two openings adapted to expose the first doping region and the second doping region is disposed to cover the dielectric layer. The second patterned semiconductor layer is disposed on a photosensitive region and the first electrodes are electrically connected to the first patterned semiconductor layer.
    • 公开了一种光电检测器。 光检测器包括基板,具有第一状态的第一图案化半导体层,电介质层,图案化导电层,层间电介质,具有第二状态的第二图案化半导体层,设置在第二状态的第二图案化半导体层, 层电介质和设置在第二半导体层的部分上的两个第二电极。 具有第一掺杂区域和第二掺杂区域的第一图案化半导体层设置在衬底的晶体管区域上。 介电层设置成覆盖基板和第一半导体层,图案化的导电层设置在电介质层上,并且具有适于暴露第一掺杂区和第二掺杂区的至少两个开口的层间电介质是 被设置成覆盖电介质层。 第二图案化半导体层设置在光敏区域上,并且第一电极电连接到第一图案化半导体层。