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1. 发明授权

US08599181B2 Display panel 有权
标题翻译：显示面板
公开(公告)号：US08599181B2
公开(公告)日：2013-12-03
申请号：US13227455
申请日：2011-09-07
申请人： Yu-Min Lin , Hsin-Li Chen , Feng-Yuan Gan
发明人： Yu-Min Lin , Hsin-Li Chen , Feng-Yuan Gan
IPC分类号： G06F3/038
CPC分类号： H01L31/12 , G02F1/13338 , G02F2001/13312 , G06F3/0412 , G09G3/20 , G09G2300/0408 , G09G2360/144 , H01L31/145 , H01L31/18
摘要： A photo detector is disclosed. The photo detector includes a substrate, a first patterned semiconductor layer, a dielectric layer, a patterned conductive layer, an inter-layer dielectric, a second patterned semiconductor layer, two first electrodes disposed on the inter-layer dielectric and two second electrodes disposed on portions of the second semiconductor layer. The first patterned semiconductor layer having a first doping region and a second doping region is disposed on a transistor region. The dielectric layer is disposed to cover the substrate and the first semiconductor layer, the patterned conductive layer is disposed on the dielectric layer, and the inter-layer dielectric having at least two openings adapted to expose the first doping region and the second doping region is disposed to cover the dielectric layer. The second patterned semiconductor layer is disposed on a photosensitive region and the first electrodes are electrically connected to the first patterned semiconductor layer.
摘要翻译：公开了一种光电检测器。光检测器包括衬底，第一图案化半导体层，电介质层，图案化导电层，层间电介质，第二图案化半导体层，设置在层间电介质上的两个第一电极和设置在层间电介质上的两个第二电极第二半导体层的部分。具有第一掺杂区域和第二掺杂区域的第一图案化半导体层设置在晶体管区域上。介电层设置成覆盖基板和第一半导体层，图案化的导电层设置在电介质层上，并且具有适于暴露第一掺杂区域和第二掺杂区域的至少两个开口的层间电介质是被设置成覆盖电介质层。第二图案化半导体层设置在光敏区域上，并且第一电极电连接到第一图案化半导体层。

2. 发明授权

US08054304B2 Photo detector and method for fabricating the same 有权
标题翻译：光电检测器及其制造方法
公开(公告)号：US08054304B2
公开(公告)日：2011-11-08
申请号：US11943602
申请日：2007-11-21
申请人： Yu-Min Lin , Hsin-Li Chen , Feng-Yuan Gan
发明人： Yu-Min Lin , Hsin-Li Chen , Feng-Yuan Gan
IPC分类号： G06F3/038 , G09G5/00
CPC分类号： H01L31/12 , G02F1/13338 , G02F2001/13312 , G06F3/0412 , G09G3/20 , G09G2300/0408 , G09G2360/144 , H01L31/145 , H01L31/18
摘要： A photo detector is disclosed. The photo detector includes a substrate, a first patterned semiconductor layer with a first state, a dielectric layer, a patterned conductive layer, an inter-layer dielectric, a second patterned semiconductor layer with a second state, two first electrodes disposed on the inter-layer dielectric and two second electrodes disposed on portions of the second semiconductor layer. The first patterned semiconductor layer having a first doping region and a second doping region is disposed on a transistor region of the substrate. The dielectric layer is disposed to cover the substrate and the first semiconductor layer, the patterned conductive layer is disposed on the dielectric layer, and the inter-layer dielectric having at least two openings adapted to expose the first doping region and the second doping region is disposed to cover the dielectric layer. The second patterned semiconductor layer is disposed on a photosensitive region and the first electrodes are electrically connected to the first patterned semiconductor layer.
摘要翻译：公开了一种光电检测器。光检测器包括基板，具有第一状态的第一图案化半导体层，电介质层，图案化导电层，层间电介质，具有第二状态的第二图案化半导体层，设置在第二状态的第二图案化半导体层，层电介质和设置在第二半导体层的部分上的两个第二电极。具有第一掺杂区域和第二掺杂区域的第一图案化半导体层设置在衬底的晶体管区域上。介电层设置成覆盖基板和第一半导体层，图案化的导电层设置在电介质层上，并且具有适于暴露第一掺杂区和第二掺杂区的至少两个开口的层间电介质是被设置成覆盖电介质层。第二图案化半导体层设置在光敏区域上，并且第一电极电连接到第一图案化半导体层。

3. 发明申请

US20110316830A1 PHOTO DETECTOR AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：照片检测器及其制造方法
公开(公告)号：US20110316830A1
公开(公告)日：2011-12-29
申请号：US13227455
申请日：2011-09-07
申请人： Yu-Min Lin , Hsin-Li Chen , Feng-Yuan Gan
发明人： Yu-Min Lin , Hsin-Li Chen , Feng-Yuan Gan
IPC分类号： G09G5/10 , H01L31/12 , H01L31/18
CPC分类号： H01L31/12 , G02F1/13338 , G02F2001/13312 , G06F3/0412 , G09G3/20 , G09G2300/0408 , G09G2360/144 , H01L31/145 , H01L31/18
摘要： A photo detector is disclosed. The photo detector includes a substrate, a first patterned semiconductor layer, a dielectric layer, a patterned conductive layer, an inter-layer dielectric, a second patterned semiconductor layer, two first electrodes disposed on the inter-layer dielectric and two second electrodes disposed on portions of the second semiconductor layer. The first patterned semiconductor layer having a first doping region and a second doping region is disposed on a transistor region. The dielectric layer is disposed to cover the substrate and the first semiconductor layer, the patterned conductive layer is disposed on the dielectric layer, and the inter-layer dielectric having at least two openings adapted to expose the first doping region and the second doping region is disposed to cover the dielectric layer. The second patterned semiconductor layer is disposed on a photosensitive region and the first electrodes are electrically connected to the first patterned semiconductor layer.
摘要翻译：公开了一种光电检测器。光检测器包括衬底，第一图案化半导体层，电介质层，图案化导电层，层间电介质，第二图案化半导体层，设置在层间电介质上的两个第一电极和设置在层间电介质上的两个第二电极第二半导体层的部分。具有第一掺杂区域和第二掺杂区域的第一图案化半导体层设置在晶体管区域上。介电层设置成覆盖基板和第一半导体层，图案化的导电层设置在电介质层上，并且具有适于暴露第一掺杂区域和第二掺杂区域的至少两个开口的层间电介质是被设置成覆盖电介质层。第二图案化半导体层设置在光敏区域上，并且第一电极电连接到第一图案化半导体层。

4. 发明申请

US20090027371A1 PHOTO DETECTOR AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：照片检测器及其制造方法
公开(公告)号：US20090027371A1
公开(公告)日：2009-01-29
申请号：US11943602
申请日：2007-11-21
申请人： Yu-Min Lin , Hsin-Li Chen , Feng-Yuan Gan
发明人： Yu-Min Lin , Hsin-Li Chen , Feng-Yuan Gan
IPC分类号： G09G3/00 , H01L31/18 , H01L31/062
CPC分类号： H01L31/12 , G02F1/13338 , G02F2001/13312 , G06F3/0412 , G09G3/20 , G09G2300/0408 , G09G2360/144 , H01L31/145 , H01L31/18
摘要： A photo detector is disclosed. The photo detector includes a substrate, a first patterned semiconductor layer with a first state, a dielectric layer, a patterned conductive layer, an inter-layer dielectric, a second patterned semiconductor layer with a second state, two first electrodes disposed on the inter-layer dielectric and two second electrodes disposed on portions of the second semiconductor layer. The first patterned semiconductor layer having a first doping region and a second doping region is disposed on a transistor region of the substrate. The dielectric layer is disposed to cover the substrate and the first semiconductor layer, the patterned conductive layer is disposed on the dielectric layer, and the inter-layer dielectric having at least two openings adapted to expose the first doping region and the second doping region is disposed to cover the dielectric layer. The second patterned semiconductor layer is disposed on a photosensitive region and the first electrodes are electrically connected to the first patterned semiconductor layer.
摘要翻译：公开了一种光电检测器。光检测器包括基板，具有第一状态的第一图案化半导体层，电介质层，图案化导电层，层间电介质，具有第二状态的第二图案化半导体层，设置在第二状态的第二图案化半导体层，层电介质和设置在第二半导体层的部分上的两个第二电极。具有第一掺杂区域和第二掺杂区域的第一图案化半导体层设置在衬底的晶体管区域上。介电层设置成覆盖基板和第一半导体层，图案化的导电层设置在电介质层上，并且具有适于暴露第一掺杂区和第二掺杂区的至少两个开口的层间电介质是被设置成覆盖电介质层。第二图案化半导体层设置在光敏区域上，并且第一电极电连接到第一图案化半导体层。

5. 发明申请

US20080135843A1 Thin Film Transistor Structure 有权
标题翻译：薄膜晶体管结构
公开(公告)号：US20080135843A1
公开(公告)日：2008-06-12
申请号：US11849593
申请日：2007-09-04
申请人： Yu-Min Lin , Feng-Yuan Gan
发明人： Yu-Min Lin , Feng-Yuan Gan
IPC分类号： H01L29/04
CPC分类号： H01L29/41733 , H01L27/12 , H01L27/124 , H01L29/42384
摘要： A thin film transistor (TFT) structure is provided. The TFT comprises a gate, a first electrode, a second electrode, a dielectric layer, and a channel layer. By overlapping the area between the first electrode and the gate, the TFT structure acquires a parasitic capacitor that is unaffected by manufacture deviations. Therefore, the TFT needs no compensation capacitor, thereby, increasing the aperture ratio of the TFT.
摘要翻译：提供薄膜晶体管（TFT）结构。 TFT包括栅极，第一电极，第二电极，电介质层和沟道层。通过重叠第一电极和栅极之间的区域，TFT结构获得不受制造偏差影响的寄生电容器。因此，TFT不需要补偿电容器，从而增加TFT的开口率。

6. 发明申请

US20120228618A1 Thin Film Transistor Structure 审中-公开
标题翻译：薄膜晶体管结构
公开(公告)号：US20120228618A1
公开(公告)日：2012-09-13
申请号：US13449464
申请日：2012-04-18
申请人： Yu-Min Lin , Feng-Yuan Gan
发明人： Yu-Min Lin , Feng-Yuan Gan
IPC分类号： H01L33/16
CPC分类号： H01L29/41733 , H01L27/12 , H01L27/124 , H01L29/42384
摘要： A thin film transistor (TFT) structure is provided. The TFT comprises a gate, a first electrode, a second electrode, a dielectric layer, and a channel layer. By overlapping the area between the first electrode and the gate, the TFT structure acquires a parasitic capacitor that is unaffected by manufacture deviations. Therefore, the TFT needs no compensation capacitor, thereby, increasing the aperture ratio of the TFT.
摘要翻译：提供薄膜晶体管（TFT）结构。 TFT包括栅极，第一电极，第二电极，电介质层和沟道层。通过重叠第一电极和栅极之间的区域，TFT结构获得不受制造偏差影响的寄生电容器。因此，TFT不需要补偿电容器，从而增加TFT的开口率。

7. 发明授权

US08184226B2 Thin film transistor structure 有权
标题翻译：薄膜晶体管结构
公开(公告)号：US08184226B2
公开(公告)日：2012-05-22
申请号：US11849593
申请日：2007-09-04
申请人： Yu-Min Lin , Feng-Yuan Gan
发明人： Yu-Min Lin , Feng-Yuan Gan
IPC分类号： G02F1/136 , H01L29/04 , H01L29/10 , H01L31/00
CPC分类号： H01L29/41733 , H01L27/12 , H01L27/124 , H01L29/42384
摘要： A thin film transistor (TFT) structure is provided. The TFT comprises a gate, a first electrode, a second electrode, a dielectric layer, and a channel layer. By overlapping the area between the first electrode and the gate, the TFT structure acquires a parasitic capacitor that is unaffected by manufacture deviations. Therefore, the TFT needs no compensation capacitor, thereby, increasing the aperture ratio of the TFT.
摘要翻译：提供薄膜晶体管（TFT）结构。 TFT包括栅极，第一电极，第二电极，电介质层和沟道层。通过重叠第一电极和栅极之间的区域，TFT结构获得不受制造偏差影响的寄生电容器。因此，TFT不需要补偿电容器，从而增加TFT的开口率。

8. 发明授权

US09536963B2 Electrode structure of a transistor, and pixel structure and display apparatus comprising the same 有权
标题翻译：晶体管的电极结构，以及包括该晶体管的像素结构和显示装置
公开(公告)号：US09536963B2
公开(公告)日：2017-01-03
申请号：US11683131
申请日：2007-03-07
申请人： Yu-Min Lin , Kuo-Lung Fang , Feng-Yuan Gan
发明人： Yu-Min Lin , Kuo-Lung Fang , Feng-Yuan Gan
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036 , H01L29/417 , G02F1/1368 , H01L29/786 , H01L27/12
CPC分类号： H01L29/41733 , G02F1/1368 , H01L27/124 , H01L29/78618 , H01L29/78696
摘要： An electrode structure of a transistor, and a pixel structure and a display apparatus comprising the electrode structure of the transistor are disclosed. The electrode structure of the transistor comprises a first electrode and a second electrode. The first electrode has at least two first portions and at least one second portion. The first portions are substantially parallel with each other and each has a first width. The second portion has a second width, and connects the substantially parallel first portions to define a space with an opening. The first width is substantially greater than the second width.
摘要翻译：公开了晶体管的电极结构以及包括晶体管的电极结构的像素结构和显示装置。晶体管的电极结构包括第一电极和第二电极。第一电极具有至少两个第一部分和至少一个第二部分。第一部分基本上彼此平行并且每个具有第一宽度。第二部分具有第二宽度，并且连接大致平行的第一部分以限定具有开口的空间。第一宽度基本上大于第二宽度。

9. 发明申请

US20080067538A1 Electrode Structure of a Transistor, and Pixel Structure and Display Apparatus Comprising the Same 有权
标题翻译：晶体管的电极结构，以及包括其的像素结构和显示装置
公开(公告)号：US20080067538A1
公开(公告)日：2008-03-20
申请号：US11683131
申请日：2007-03-07
申请人： Yu-Min Lin , Kuo-Lung Fang , Feng-Yuan Gan
发明人： Yu-Min Lin , Kuo-Lung Fang , Feng-Yuan Gan
IPC分类号： H01L33/00 , H01L29/417
CPC分类号： H01L29/41733 , G02F1/1368 , H01L27/124 , H01L29/78618 , H01L29/78696
摘要： An electrode structure of a transistor, and a pixel structure and a display apparatus comprising the electrode structure of the transistor are disclosed. The electrode structure of the transistor comprises a first electrode and a second electrode. The first electrode has at least two first portions and at least one second portion. The first portions are substantially parallel with each other and each has a first width. The second portion has a second width, and connects the substantially parallel first portions to define a space with an opening. The first width is substantially greater than the second width.
摘要翻译：公开了晶体管的电极结构以及包括晶体管的电极结构的像素结构和显示装置。晶体管的电极结构包括第一电极和第二电极。第一电极具有至少两个第一部分和至少一个第二部分。第一部分基本上彼此平行并且每个具有第一宽度。第二部分具有第二宽度，并且连接大致平行的第一部分以限定具有开口的空间。第一宽度基本上大于第二宽度。

10. 发明授权

US08177989B2 Copper conducting wire structure and fabricating method thereof 有权
标题翻译：铜导线结构及其制造方法
公开(公告)号：US08177989B2
公开(公告)日：2012-05-15
申请号：US11889234
申请日：2007-08-10
申请人： Feng-Yuan Gan , Han-Tu Lin , Kuo-Yuan Tu
发明人： Feng-Yuan Gan , Han-Tu Lin , Kuo-Yuan Tu
IPC分类号： C30B33/00
CPC分类号： C23C14/185 , B32B15/00 , C03C17/36 , C03C17/3607 , C03C17/3618 , C03C17/3626 , C03C17/3649 , C03C17/3671 , C23C14/024 , C23C14/0641 , G02F1/136286 , H01L27/124 , H01L29/4908 , H05K1/0306 , H05K3/388 , Y10S438/974 , Y10T428/24917 , Y10T428/24926
摘要： A copper conducting wire structure is for use in the thin-film-transistor liquid crystal display (LCD) device. The copper conducting wire structure includes at least a buffer layer and a copper layer. A fabricating method of the copper conducting wire structure includes the following steps. At first, a glass substrate is provided. Next, the buffer layer is formed on the glass substrate. The buffer layer is comprised of a copper nitride. At last, the copper layer is formed on the buffer layer.
摘要翻译：铜导线结构用于薄膜晶体管液晶显示（LCD）装置。铜导线结构至少包括缓冲层和铜层。铜导线结构的制造方法包括以下步骤。首先，提供玻璃基板。接着，在玻璃基板上形成缓冲层。缓冲层由氮化铜组成。最后，在缓冲层上形成铜层。

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