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1. 发明授权

US5561624A Read-only-memory array with coding after metallization 失效
标题翻译：只读存储器阵列，具有金属化后的编码
公开(公告)号：US5561624A
公开(公告)日：1996-10-01
申请号：US495761
申请日：1995-06-26
申请人： Hsin-Li Chen , Te-Sun Wu , Kai-Chi Hsieh
发明人： Hsin-Li Chen , Te-Sun Wu , Kai-Chi Hsieh
IPC分类号： G11C17/12 , H01L27/112 , G11C17/00
CPC分类号： G11C17/126 , H01L27/112
摘要： A ROM array with coding after metallization comprises a plurality of first bit lines, a plurality of second bit lines, a plurality of third bit lines, a plurality of word lines, a plurality of first control lines, a plurality of second control lines and a plurality of selecting lines. Memory cells of the ROM array are formed by the intersection of the word lines and the first and second bit lines, wherein the word lines are polysilicon gates and the bit lines are drain/source diffusion regions. The third bit lines are metal lines above the first bit lines. The third bit lines are not wide enough to cover spacings between the first and second bit lines, thus exposing spaces for code implantation. The first and second control lines intersect the first and second bit lines to form a number of switches for controlling data reading paths to The memory cells. The positions and ON/OFF states of the switches are designed to provide at least two data reading paths to each memory cell. Thus, the sensing currents in the bit lines are increased and become more uniform.
摘要翻译：在金属化之后编码的ROM阵列包括多个第一位线，多个第二位线，多个第三位线，多个字线，多个第一控制线，多个第二控制线和多条选线。 ROM阵列的存储单元由字线和第一和第二位线的交点形成，其中字线是多晶硅栅极，位线是漏极/源极扩散区域。第三位线是位于第一位线之上的金属线。第三位线的宽度不足以覆盖第一和第二位线之间的间隔，从而暴露用于代码注入的空间。第一和第二控制线与第一和第二位线相交以形成用于控制到存储单元的数据读取路径的多个开关。开关的位置和开/关状态被设计为向每个存储单元提供至少两条数据读取路径。因此，位线中的感测电流增加并变得更均匀。

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