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    • 2. 发明授权
    • Photomask blank, photomask, and method for manufacturing photomask blank
    • 光掩模坯料,光掩模以及制造光掩模坯料的方法
    • US08304147B2
    • 2012-11-06
    • US12935517
    • 2009-03-31
    • Hiroyuki IwashitaHiroaki ShishidoAtsushi KominatoMasahiro Hashimoto
    • Hiroyuki IwashitaHiroaki ShishidoAtsushi KominatoMasahiro Hashimoto
    • G03F1/20
    • G03F1/22G03F1/46G03F1/54G03F1/80H01L21/0274
    • The present invention provides a photomask blank used for producing a photomask to which an ArF excimer laser light is applied, wherein: a light-shielding film is provided on a light transmissive substrate; the light-shielding film has a laminated structure in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order from the side close to the light transmissive substrate; the thickness of the entire light-shielding film is 60 nm or less; the back-surface antireflection layer is made of a film containing a metal and has a first etching rate; the front-surface antireflection layer is made of a film containing a metal and has a third etching rate; the light-shielding layer is made of a film containing the same metal as that contained in the back-surface antireflection layer or the front-surface antireflection layer and has a second etching rate that is lower than the first etching rate and the third etching rate; and the thickness of the light-shielding layer is 30% or less of the thickness of the entire light-shielding film.
    • 本发明提供一种用于制造施加了ArF准分子激光的光掩模的光掩模坯料,其中:在透光基板上设置有遮光膜; 遮光膜具有层叠结构,其中背面防反射层,遮光层和前表面抗反射层从靠近透光基板的一侧依次层叠; 整个遮光膜的厚度为60nm以下; 背面抗反射层由含有金属的膜制成,具有第一蚀刻速率; 前表面抗反射层由含有金属的膜制成,具有第三蚀刻速率; 遮光层由含有与背面防反射层或前表面防反射层中所含的金属相同的金属的膜制成,并且具有比第一蚀刻速率和第三蚀刻速率低的第二蚀刻速率 ; 遮光层的厚度为整个遮光膜的厚度的30%以下。
    • 4. 发明申请
    • PHOTOMASK BLANK, PHOTOMASK, AND METHOD FOR MANUFACTURING PHOTOMASK BLANK
    • PHOTOMASK BLANK,PHOTOMASK和制造光电隔离层的方法
    • US20110104592A1
    • 2011-05-05
    • US12935517
    • 2009-03-31
    • Hiroyuki IwashitaHiroaki ShishidoAtsushi KominatoMasahiro Hashimoto
    • Hiroyuki IwashitaHiroaki ShishidoAtsushi KominatoMasahiro Hashimoto
    • G03F1/00
    • G03F1/22G03F1/46G03F1/54G03F1/80H01L21/0274
    • The present invention provides a photomask blank used for producing a photomask to which an ArF excimer laser light is applied, wherein: a light-shielding film is provided on a light transmissive substrate; the light-shielding film has a laminated structure in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order from the side close to the light transmissive substrate; the thickness of the entire light-shielding film is 60 nm or less; the back-surface antireflection layer is made of a film containing a metal and has a first etching rate; the front-surface antireflection layer is made of a film containing a metal and has a third etching rate; the light-shielding layer is made of a film containing the same metal as that contained in the back-surface antireflection layer or the front-surface antireflection layer and has a second etching rate that is lower than the first etching rate and the third etching rate; and the thickness of the light-shielding layer is 30% or less of the thickness of the entire light-shielding film.
    • 本发明提供一种用于制造施加了ArF准分子激光的光掩模的光掩模坯料,其中:在透光基板上设置有遮光膜; 遮光膜具有层叠结构,其中背面防反射层,遮光层和前表面抗反射层从靠近透光基板的一侧依次层叠; 整个遮光膜的厚度为60nm以下; 背面抗反射层由含有金属的膜制成,具有第一蚀刻速率; 前表面抗反射层由含有金属的膜制成,具有第三蚀刻速率; 遮光层由含有与背面防反射层或前表面防反射层中所含的金属相同的金属的膜制成,并且具有比第一蚀刻速率和第三蚀刻速率低的第二蚀刻速率 ; 遮光层的厚度为整个遮光膜的厚度的30%以下。
    • 10. 发明授权
    • Defect inspection method and apparatus therefor
    • 缺陷检查方法及其设备
    • US06819416B2
    • 2004-11-16
    • US10295909
    • 2002-11-18
    • Shunji MaedaAtsushi YoshidaYukihiro ShibataMinoru YoshidaSachio UtoHiroaki ShishidoToshihiko Nakata
    • Shunji MaedaAtsushi YoshidaYukihiro ShibataMinoru YoshidaSachio UtoHiroaki ShishidoToshihiko Nakata
    • G01N2100
    • G01N21/956
    • A method of inspecting a pattern formed on a substrate, comprising the steps of emitting an ultraviolet laser beam from a light source, polarizing the ultraviolet laser beam, scanning the polarized ultraviolet laser beam on a pupil of an objective lens, illuminating a sample with the polarized ultraviolet laser beam after the polarized ultraviolet light beam has passed through the objective lens, analyzing light reflected from the sample as a result of the illuminating step after the reflected light has passed through the objective lens, detecting an image of the sample formed by the analyzed light with a time delay integration sensor, outputting signals corresponding to the detected image of the sample from the time delay integration sensor in parallel, and processing the parallel signals outputted from the time delay integration sensor to detect a defect of a pattern on the sample.
    • 一种检查形成在基板上的图案的方法,包括以下步骤:从光源发射紫外激光束,使紫外激光束偏振,扫描物镜的光瞳上的偏振紫外激光束,照射样品 在偏光紫外光束通过物镜之后,偏振紫外激光束作为反射光通过物镜后的照明步骤的结果分析从样品反射的光,检测由所述物镜形成的样品的图像 用时间延迟积分传感器对光进行分析,并行地从时间延迟积分传感器输出与检测出的样本图像相对应的信号,对从时间延迟积分传感器输出的并行信号进行处理,检测样本上的图案缺陷 。