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    • 8. 发明授权
    • Method of manufacturing semiconductor device
    • 制造半导体器件的方法
    • US5972741A
    • 1999-10-26
    • US958992
    • 1997-10-28
    • Hirotoshi KuboEiichiroh KuwakoMasanao KitagawaMasahito OndaHiroaki SaitouKeita Odajima
    • Hirotoshi KuboEiichiroh KuwakoMasanao KitagawaMasahito OndaHiroaki SaitouKeita Odajima
    • H01L21/336H01L29/78H01L21/352
    • H01L29/7813
    • A first conductivity layer and a first insulating film are successively formed on a channel layer, and a photoresist film is formed on the first insulating film. The photoresist film is selectively exposed to light using a photomask and patterned. Using the patterned photoresist film as a mask, the first insulating film and the first conductivity layer are etched to form source electrodes from the first conductivity layer. Using the first insulating film and the source electrodes as a mask, an impurity of one conductivity type is diffused into exposed portions of the channel layer to form source regions. A second insulating film is formed in covering relation to side walls and upper surfaces of the source electrodes. Using the second insulating film as a mask, the channel layer and the common drain layer are etched to form trenches in the source regions, the channel layer, and the common drain layer. A third insulating film is formed on surfaces of the trenches, and a second conductive layer is formed as a gate electrode on the entire surface so as to fill up the trenches and cover the second insulating film.
    • 在沟道层上依次形成第一导电层和第一绝缘膜,在第一绝缘膜上形成光致抗蚀剂膜。 使用光掩模将光致抗蚀剂膜选择性地暴露于光并图案化。 使用图案化的光致抗蚀剂膜作为掩模,第一绝缘膜和第一导电层被蚀刻以从第一导电层形成源电极。 使用第一绝缘膜和源电极作为掩模,一种导电类型的杂质扩散到沟道层的暴露部分中以形成源极区。 形成与源极电极的侧壁和上表面相关的第二绝缘膜。 使用第二绝缘膜作为掩模,蚀刻沟道层和公共漏极层,以在源极区,沟道层和公共漏极层中形成沟槽。 第三绝缘膜形成在沟槽的表面上,并且在整个表面上形成第二导电层作为栅电极,以填充沟槽并覆盖第二绝缘膜。