专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5479038A Semiconductor device having a multilevel metallization 失效
标题翻译：具有多层金属化的半导体器件
公开(公告)号：US5479038A
公开(公告)日：1995-12-26
申请号：US351125
申请日：1994-11-30
申请人： Mamoru Ishikiriyama
发明人： Mamoru Ishikiriyama
IPC分类号： H01L23/522 , H01L21/768 , H01L23/482 , H01L23/528 , H01L23/48
CPC分类号： H01L23/5283 , H01L23/4825 , H01L2924/0002
摘要： Upper and lower metallizations are formed on a semiconductor substrate so as to prevent the upper metallization from being inferior wherein the semiconductor substrate includes a plurality of element forming regions, a plurality of isolation insulating regions for surrounding said element forming regions, and a supporter region extending between the isolation insulating regions. The lower metallization is formed on the supporter region and the upper metallization is formed to extend from one element forming region to another element forming regions while striding over the lower metallization not to cross the region where the lower metallization adjoins the isolation insulating regions. The lower metallization may be formed from one element forming region to another element forming regions while the upper metallization is formed to stride over the lower metallization.
摘要翻译：在半导体衬底上形成上部和下部金属化，以防止上部金属化劣化，其中半导体衬底包括多个元件形成区域，用于围绕所述元件形成区域的多个隔离绝缘区域和延伸的支撑区域隔离绝缘区域之间。下部金属化形成在支撑区域上，并且上部金属化形成为从一个元件形成区域延伸到另一个元件形成区域，同时跨越下部金属化物不跨越下部金属化物邻接隔离绝缘区域的区域。下部金属化可以由一个元件形成区域形成到另一个元件形成区域，而上部金属化形成为跨越较低的金属化层。

2. 发明授权

US06433287B1 Connection structure 失效
标题翻译：连接结构
公开(公告)号：US06433287B1
公开(公告)日：2002-08-13
申请号：US09612462
申请日：2000-07-07
申请人： Katsuhito Sasaki , Isao Kimura , Mamoru Ishikiriyama
发明人： Katsuhito Sasaki , Isao Kimura , Mamoru Ishikiriyama
IPC分类号： H01R909
CPC分类号： H01L23/528 , H01L23/5226 , H01L2924/0002 , Y10T29/49165 , H01L2924/00
摘要： There is provided a connection structure in which concentration of current in a connection portion of wirings, or of an element and a wiring is prevented. Three slits are formed in each of a first wiring and a second wiring, which extends in a direction perpendicular to a direction in which the first wiring extends, so that distances from the side of a cross internal angle gradually become longer. A portion of a current path is changed by these slits so as to limit current which can flow through the cross internal angle.
摘要翻译：提供了一种连接结构，其中防止了布线的连接部分或元件和布线的电流集中。在与第一布线延伸的方向垂直的方向上延伸的第一布线和第二布线中的每一个中形成有三个狭缝，使得从交叉内角的一侧的距离逐渐变长。通过这些狭缝改变电流路径的一部分，以限制可以流过十字内角的电流。

3. 发明授权

US06424014B1 Semiconductor element with electric field reducing device mounted therein for increasing dielectric strength 有权
公开(公告)号：US06424014B1
公开(公告)日：2002-07-23
申请号：US09734741
申请日：2000-12-13
申请人： Katsuhito Sasaki , Isao Kimura , Mamoru Ishikiriyama
发明人： Katsuhito Sasaki , Isao Kimura , Mamoru Ishikiriyama
IPC分类号： H01L2976
摘要： Expansion promotion means (24) for more efficiently promoting the expansion of the depletion layer (19) than the electrically insulating film(14) having a suppressor electrode layer (20) buried therein is arranged between narrow portions (23b) of the suppressor electrode layer to control the expansion of the depletion layer (19), by which arrangement the spacing s between the narrow portions (23b) can be reduced without decreasing the field reducing effect of the field reduction means, which contains the suppressor electrode layer.

4. 发明授权

US08242046B2 Inorganic oxide, exhaust gas purifying catalyst carrier, and exhaust gas purifying catalyst 有权
标题翻译：无机氧化物，废气净化催化剂载体和废气净化催化剂
公开(公告)号：US08242046B2
公开(公告)日：2012-08-14
申请号：US10572040
申请日：2005-07-22
申请人： Akira Morikawa , Toshitaka Tanabe , Kae Yamamura , Naoki Takahashi , Hiromasa Suzuki , Akemi Sato , Mamoru Ishikiriyama , Takaaki Kanazawa , Oji Kuno
发明人： Akira Morikawa , Toshitaka Tanabe , Kae Yamamura , Naoki Takahashi , Hiromasa Suzuki , Akemi Sato , Mamoru Ishikiriyama , Takaaki Kanazawa , Oji Kuno
IPC分类号： B01J23/10
CPC分类号： B01J23/002 , B01D53/945 , B01D2255/1025 , B01D2255/204 , B01D2255/206 , B01D2255/2092 , B01J23/02 , B01J23/10 , B01J35/023 , B01J37/03 , B01J2523/00 , B82Y30/00 , C01F7/002 , C01G25/006 , C01P2002/52 , C01P2004/50 , C01P2004/64 , Y02T10/22 , Y10T428/2982 , Y10T428/2991 , B01J2523/31 , B01J2523/3706 , B01J2523/3725 , B01J2523/48
摘要： A particulate inorganic oxide containing aluminum oxide, a metal oxide forming no composite oxide with aluminum oxide, and an additional element including at least one of a rare-earth element and an alkali earth element, the inorganic oxide containing a secondary particle formed by aggregating primary particles; wherein at least a part of the secondary particle includes a plurality of first primary particles, each having a particle size of 100 nm or less, containing aluminum oxide and the additional element, and a plurality of second primary particles, each having a particle size of 100 nm or less, containing the metal oxide and the additional element; wherein at least a part of the first and second primary particles has a surface concentrated region where the additional element has a locally increased content in a surface layer part thereof.
摘要翻译：包含氧化铝的颗粒状无机氧化物，不与氧化铝形成复合氧化物的金属氧化物，以及包含稀土元素和碱土金属元素中的至少一种的附加元素，所述无机氧化物含有通过将初级粒子; 其中所述二次粒子的至少一部分包括多个第一一次粒子，每个具有100nm以下的粒径为100nm以下的第一一次粒子，其含有氧化铝和所述附加元素，以及多个第二一次粒子， 100nm以下，含有金属氧化物和附加元素; 其中所述第一和第二一次粒子的至少一部分具有表面浓缩区域，其中所述附加元素在其表层部分中具有局部增加的含量。

5. 发明申请

US20070104950A1 Inorganic oxide, exhaust gas purifying catalyst carrier, and exhaust gas purifying catalyst 有权
标题翻译：无机氧化物，废气净化催化剂载体和废气净化催化剂
公开(公告)号：US20070104950A1
公开(公告)日：2007-05-10
申请号：US10572040
申请日：2005-07-22
申请人： Akira Morikawa , Toshitaka Tanabe , Kae Yamamura , Naoki Takahashi , Hiromasa Suzuki , Akemi Sato , Mamoru Ishikiriyama , Takaaki Kanazawa , Oji Kuno
发明人： Akira Morikawa , Toshitaka Tanabe , Kae Yamamura , Naoki Takahashi , Hiromasa Suzuki , Akemi Sato , Mamoru Ishikiriyama , Takaaki Kanazawa , Oji Kuno
IPC分类号： B32B15/02
CPC分类号： B01J23/002 , B01D53/945 , B01D2255/1025 , B01D2255/204 , B01D2255/206 , B01D2255/2092 , B01J23/02 , B01J23/10 , B01J35/023 , B01J37/03 , B01J2523/00 , B82Y30/00 , C01F7/002 , C01G25/006 , C01P2002/52 , C01P2004/50 , C01P2004/64 , Y02T10/22 , Y10T428/2982 , Y10T428/2991 , B01J2523/31 , B01J2523/3706 , B01J2523/3725 , B01J2523/48
摘要： A particulate inorganic oxide containing aluminum oxide, a metal oxide forming no composite oxide with aluminum oxide, and an additional element including at least one of a rare-earth element and an alkali earth element, the inorganic oxide containing a secondary particle formed by aggregating primary particles; wherein at least a part of the secondary particle includes a plurality of first primary particles, each having a particle size of 100 nm or less, containing aluminum oxide and the additional element, and a plurality of second primary particles, each having a particle size of 100 nm or less, containing the metal oxide and the additional element; wherein at least a part of the first and second primary particles has a surface concentrated region where the additional element has a locally increased content in a surface layer part thereof.
摘要翻译：包含氧化铝的颗粒状无机氧化物，不与氧化铝形成复合氧化物的金属氧化物，以及包含稀土元素和碱土金属元素中的至少一种的附加元素，所述无机氧化物含有通过将初级粒子; 其中所述二次粒子的至少一部分包括多个第一一次粒子，每个具有100nm以下的粒径为100nm以下的第一一次粒子，其含有氧化铝和所述附加元素，以及多个第二一次粒子， 100nm以下，含有金属氧化物和附加元素; 其中所述第一和第二一次粒子的至少一部分具有表面浓缩区域，其中所述附加元素在其表层部分中具有局部增加的含量。

6. 发明授权

US06250137B1 Method and apparatus for determining gasoline characteristics by using ultrasonic wave 失效
标题翻译：使用超声波测定汽油特性的方法和装置
公开(公告)号：US06250137B1
公开(公告)日：2001-06-26
申请号：US09464385
申请日：1999-12-16
申请人： Toshimitsu Takahashi , Takuya Kondo , Hiroaki Saitou , Toshihiro Okazaki , Mamoru Ishikiriyama
发明人： Toshimitsu Takahashi , Takuya Kondo , Hiroaki Saitou , Toshihiro Okazaki , Mamoru Ishikiriyama
IPC分类号： G01N2902
CPC分类号： G01N29/326 , G01N29/024 , G01N2291/02433 , G01N2291/02818 , G01N2291/02881 , G01N2291/044
摘要： The present invention relates to the measurement of gasoline volatility characteristics, and is directed in particular to the provision of an ultrasonic-type gasoline characteristic determination method and apparatus capable of determining the volatility characteristics with good accuracy by measuring the velocity of an ultrasonic wave in a gasoline containing alcohol or other additives and by compensating for deviations from a reference temperature, and a method for determining gasoline volatility characteristics by using an ultrasonic wave is provided, comprising the steps of transmitting an ultrasonic wave into a gasoline being measured, measuring the velocity of the ultrasonic wave in the gasoline, and determining the volatility characteristics of the gasoline from the velocity.
摘要翻译：本发明涉及汽油挥发性特征的测量，特别涉及提供一种超声波型汽油特性确定方法和装置，其能够通过测量超声波的速度以高精度确定挥发性特性含有醇或其他添加剂的汽油和通过补偿与参考温度的偏差，以及通过使用超声波测定汽油挥发性的方法，包括以下步骤：将超声波传输到待测汽油中，测量速度汽油中的超声波，并从速度确定汽油的挥发性特征。

7. 发明授权

US5946584A Method for manufacturing a dielectric isolation substrate 失效
标题翻译：电介质隔离基板的制造方法
公开(公告)号：US5946584A
公开(公告)日：1999-08-31
申请号：US909079
申请日：1997-08-14
申请人： Mamoru Ishikiriyama
发明人： Mamoru Ishikiriyama
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76251
摘要： In a method for manufacturing a dielectric isolation substrate according to the present invention, during the process of pressing a semiconductor substrate (wafer), a dummy chip 103 is positioned toward the outside edge of the wafer with respect to the LSI chip 102, which is pressed into contact last, V-grooves 103A in the dummy chip 103 are formed to be deeper than V-grooves 102A in the LSI chip 102 so that voids can be effectively pushed into the dummy chip 103. Consequently, isolation of the LSI chip caused by voids can be prevented, thereby achieving an improvement in yield.
摘要翻译：在本发明的电介质隔离基板的制造方法中，在半导体基板（晶片）的压制过程中，将虚设芯片103相对于LSI芯片102朝向晶片的外侧边缘定位，与虚拟芯片103中的V沟槽103A形成为比LSI芯片102中的V形槽102A更深，从而可以将空隙有效地推入虚设芯片103中。因此，LSI芯片的隔离引起可以防止空隙，从而实现产率的提高。

8. 发明申请

US20090082199A1 Catalyst for Purifying Exhaust Gases 失效
标题翻译：净化废气的催化剂
公开(公告)号：US20090082199A1
公开(公告)日：2009-03-26
申请号：US11921026
申请日：2006-05-25
申请人： Hiromasa Suzuki , Takahiko Fujiwara , Mamoru Ishikiriyama
发明人： Hiromasa Suzuki , Takahiko Fujiwara , Mamoru Ishikiriyama
IPC分类号： B01J23/40 , B01J23/48
CPC分类号： B01J23/626 , B01D53/945 , B01J23/6447 , B01J23/8906 , B01J23/8913 , B01J35/0006 , B01J35/04 , Y02T10/22
摘要： A catalyst for purifying exhaust gases includes a carrier substrate and a catalyst layer which is carried on the carrier substrate and contains a noble metal, a porous oxide and an addition oxide containing at least one selected from the group consisting of Ni, Bi, Sn, Fe, Co, Cu and Zn. Only a downstream section of the carrier substrate, which is located on a downstream side of an exhaust gas stream contains the addition oxide, whereas an upstream section of the carrier substrate does not contain the addition oxide. With this arrangement, in the upstream section of the carrier substrate, the noble metal and the addition oxide do not exist together so that the noble metal is not deteriorated with the addition oxide. As a result, in the upstream section, the purification performance as a three-way catalyst is favorably achieved, thereby restraining the emission of H2S while maintaining the three-way performance.
摘要翻译：用于净化废气的催化剂包括载体基材和催化剂层，载体基材和载体载体上含有贵金属，多孔氧化物和含有选自Ni，Bi，Sn， Fe，Co，Cu和Zn。仅位于排气流的下游侧的载体基板的下游部分含有氧化物，而载体基板的上游部分不含有氧化物。通过这种布置，在载体基板的上游部分中，贵金属和加成氧化物不存在一起，使得贵金属不会与加成氧化物劣化。结果，在上游部分中，有利地实现了作为三元催化剂的净化性能，从而在保持三通性能的同时抑制了H2S的排放。

9. 发明授权

US06213104B1 Method and a device for supplying fuel to an internal combustion engine 失效
标题翻译：用于向内燃机供给燃料的方法和装置
公开(公告)号：US06213104B1
公开(公告)日：2001-04-10
申请号：US09165353
申请日：1998-10-02
申请人： Mamoru Ishikiriyama , Sumio Kamiya , Makoto Hiei , Nobuaki Takazawa , Yasushi Takahashi , Syozi Miyazaki
发明人： Mamoru Ishikiriyama , Sumio Kamiya , Makoto Hiei , Nobuaki Takazawa , Yasushi Takahashi , Syozi Miyazaki
IPC分类号： F02G500
CPC分类号： F02B51/00 , F02B3/06
摘要： According to the present invention, the state of a liquid fuel such as diesel fuel is made a supercritical state by raising the pressure and the temperature of the fuel above the critical pressure and temperature. Then, the fuel is injected from the fuel injection valve into the combustion chamber of the engine in the supercritical state. When the fuel in the supercritical state is injected into the combustion chamber of the engine, it forms an extremely fine uniform mist in the entire combustion chamber. Therefore, the combustion in the engine is largely improved.
摘要翻译：根据本发明，通过将燃料的压力和温度升高到临界压力和温度以上，使诸如柴油燃料的液体燃料的状态成为超临界状态。然后，将燃料从燃料喷射阀喷射到超临界状态的发动机的燃烧室内。当超临界状态的燃料被喷射到发动机的燃烧室中时，在整个燃烧室中形成极细的均匀雾。因此，发动机的燃烧大大提高。

10. 发明授权

US5387817A Dielectric isolation substrate having single-crystal silicon islands surrounded by groove and lower conductive layer filling the groove therewith 失效
标题翻译：具有被沟槽包围的单晶硅岛的介电隔离衬底和用其填充槽的下导电层
公开(公告)号：US5387817A
公开(公告)日：1995-02-07
申请号：US982552
申请日：1992-11-27
申请人： Mamoru Ishikiriyama
发明人： Mamoru Ishikiriyama
IPC分类号： H01L23/522 , H01L21/768 , H01L23/482 , H01L23/528 , H01L29/04 , H01L29/06
CPC分类号： H01L23/5283 , H01L23/4825 , H01L2924/0002
摘要： Upper and lower metallizations are formed on a semiconductor substrate so as to prevent the upper metallization from being inferior wherein the semiconductor substrate includes a plurality of element forming regions, a plurality of isolation insulating regions for surrounding said element forming regions, and a supporter region extending between the isolation insulating regions. The lower metallization is formed on the supporter region and the upper metallization is formed to extend from one element forming region to another element forming regions while striding over the lower metallization not to cross the region where the lower metallization adjoins the isolation insulating regions. The lower metallization may be formed from one element forming region to another element forming regions while the upper metallization is formed to stride over the lower metallization.
摘要翻译：在半导体衬底上形成上部和下部金属化，以防止上部金属化劣化，其中半导体衬底包括多个元件形成区域，用于围绕所述元件形成区域的多个隔离绝缘区域和延伸的支撑区域隔离绝缘区域之间。下部金属化形成在支撑区域上，并且上部金属化形成为从一个元件形成区域延伸到另一个元件形成区域，同时跨越下部金属化物不跨越下部金属化物邻接隔离绝缘区域的区域。下部金属化可以由一个元件形成区域形成到另一个元件形成区域，而上部金属化形成为跨越较低的金属化层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式