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    • 1. 发明授权
    • Semiconductor device having a multilevel metallization
    • 具有多层金属化的半导体器件
    • US5479038A
    • 1995-12-26
    • US351125
    • 1994-11-30
    • Mamoru Ishikiriyama
    • Mamoru Ishikiriyama
    • H01L23/522H01L21/768H01L23/482H01L23/528H01L23/48
    • H01L23/5283H01L23/4825H01L2924/0002
    • Upper and lower metallizations are formed on a semiconductor substrate so as to prevent the upper metallization from being inferior wherein the semiconductor substrate includes a plurality of element forming regions, a plurality of isolation insulating regions for surrounding said element forming regions, and a supporter region extending between the isolation insulating regions. The lower metallization is formed on the supporter region and the upper metallization is formed to extend from one element forming region to another element forming regions while striding over the lower metallization not to cross the region where the lower metallization adjoins the isolation insulating regions. The lower metallization may be formed from one element forming region to another element forming regions while the upper metallization is formed to stride over the lower metallization.
    • 在半导体衬底上形成上部和下部金属化,以防止上部金属化劣化,其中半导体衬底包括多个元件形成区域,用于围绕所述元件形成区域的多个隔离绝缘区域和延伸的支撑区域 隔离绝缘区域之间。 下部金属化形成在支撑区域上,并且上部金属化形成为从一个元件形成区域延伸到另一个元件形成区域,同时跨越下部金属化物不跨越下部金属化物邻接隔离绝缘区域的区域。 下部金属化可以由一个元件形成区域形成到另一个元件形成区域,而上部金属化形成为跨越较低的金属化层。
    • 8. 发明申请
    • Catalyst for Purifying Exhaust Gases
    • 净化废气的催化剂
    • US20090082199A1
    • 2009-03-26
    • US11921026
    • 2006-05-25
    • Hiromasa SuzukiTakahiko FujiwaraMamoru Ishikiriyama
    • Hiromasa SuzukiTakahiko FujiwaraMamoru Ishikiriyama
    • B01J23/40B01J23/48
    • B01J23/626B01D53/945B01J23/6447B01J23/8906B01J23/8913B01J35/0006B01J35/04Y02T10/22
    • A catalyst for purifying exhaust gases includes a carrier substrate and a catalyst layer which is carried on the carrier substrate and contains a noble metal, a porous oxide and an addition oxide containing at least one selected from the group consisting of Ni, Bi, Sn, Fe, Co, Cu and Zn. Only a downstream section of the carrier substrate, which is located on a downstream side of an exhaust gas stream contains the addition oxide, whereas an upstream section of the carrier substrate does not contain the addition oxide. With this arrangement, in the upstream section of the carrier substrate, the noble metal and the addition oxide do not exist together so that the noble metal is not deteriorated with the addition oxide. As a result, in the upstream section, the purification performance as a three-way catalyst is favorably achieved, thereby restraining the emission of H2S while maintaining the three-way performance.
    • 用于净化废气的催化剂包括载体基材和催化剂层,载体基材和载体载体上含有贵金属,多孔氧化物和含有选自Ni,Bi,Sn, Fe,Co,Cu和Zn。 仅位于排气流的下游侧的载体基板的下游部分含有氧化物,而载体基板的上游部分不含有氧化物。 通过这种布置,在载体基板的上游部分中,贵金属和加成氧化物不存在一起,使得贵金属不会与加成氧化物劣化。 结果,在上游部分中,有利地实现了作为三元催化剂的净化性能,从而在保持三通性能的同时抑制了H2S的排放。