专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110114021A1 PLANAR ANTENNA MEMBER AND PLASMA PROCESSING APPARATUS INCLUDING THE SAME 审中-公开
标题翻译：平面天线成员和等离子体处理装置，包括它们
公开(公告)号：US20110114021A1
公开(公告)日：2011-05-19
申请号：US12922402
申请日：2009-03-13
申请人： Atsushi Ueda , Hikaru Adachi , Caizhong Tian , Yoshinori Fukuda , Toshiaki Hongo , Masao Yoshioka
发明人： Atsushi Ueda , Hikaru Adachi , Caizhong Tian , Yoshinori Fukuda , Toshiaki Hongo , Masao Yoshioka
IPC分类号： C23C16/50 , H01Q13/10 , C23C8/10
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/3222
摘要： The present invention is a planar antenna member configured to introduce electromagnetic waves generated by an electromagnetic-wave generating source into a processing vessel of a plasma processing apparatus, the planar antenna member comprising: a base member of a circular plate shape, made of a conductive material; and a plurality of through-holes formed in the base member of a circular plate shape, the through-holes being configured to radiate the electromagnetic waves; wherein: the through-holes include a plurality of first through-holes which are arranged on a circumference of a circle whose center corresponds to a center of the planar antenna member, and a plurality of second through-holes which are arranged concentrically with the circle outside the first through-holes; a ratio L1/r is within a range between 0.35 and 0.5, in which L1 is a distance from the center of the planar antenna member to a center of one of the first through-holes, and r is a radius of the planar antenna member; and a ratio L2/r is within a range between 0.7 and 0.85, in which L2 is a distance from the center of the planar antenna member to a center of one of the second through-holes, and r is the radius of the planar antenna member.
摘要翻译：本发明是一种平面天线部件，其被配置为将由电磁波发生源产生的电磁波引入到等离子体处理装置的处理容器中，所述平面天线部件包括：圆形板状的基体部件，材料; 以及形成在所述基板的圆板形状的多个通孔，所述通孔被配置为辐射所述电磁波; 其中：所述通孔包括多个第一通孔，所述多个第一通孔布置在其中心对应于所述平面天线构件的中心的圆的圆周上，以及多个第二通孔，所述第二通孔与所述圆第一通孔外; 比率L1 / r在0.35和0.5之间的范围内，其中L1是从平面天线构件的中心到第一通孔中的一个的中心的距离，r是平面天线构件的半径 ; 并且比率L2 / r在0.7和0.85之间的范围内，其中L2是从平面天线构件的中心到第二通孔中的一个的中心的距离，并且r是平面天线的半径会员。

2. 发明申请

US20120180953A1 PLASMA PROCESSING APPARATUS AND WAVE RETARDATION PLATE USED THEREIN 审中-公开
标题翻译：使用的等离子体处理装置和波阻尼板
公开(公告)号：US20120180953A1
公开(公告)日：2012-07-19
申请号：US13498339
申请日：2010-09-29
申请人： Shigenori Ozaki , Ryusaku Ota , Hikaru Adachi , Makoto Ishitsubo
发明人： Shigenori Ozaki , Ryusaku Ota , Hikaru Adachi , Makoto Ishitsubo
IPC分类号： B05C9/00 , H01Q15/08 , C23C16/50
CPC分类号： H01J37/3222 , H01J37/32192 , H01J37/32238 , H01L21/02247 , H01L21/02252
摘要： A plasma processing apparatus includes a planar antenna member, which introduces electromagnetic waves generated by means of an electromagnetic wave generator into a processing chamber; a waveguide which supplies the electromagnetic waves to the planar antenna member; and a wave retardation plate, which is provided on the planar antenna member, and changes the wavelength of the electromagnetic waves supplied from the waveguide; a cover member which covers the wave retardation plate and the planar antenna member from above. The wave retardation plate is configured using a dielectric material, and the permittivity of the region between the planar antenna member and the cover member is not uniform on the plane parallel to the upper surface of the planar antenna member.
摘要翻译：等离子体处理装置包括平面天线构件，其将通过电磁波发生器产生的电磁波引入到处理室中; 波导，其向所述平面天线部件供给所述电磁波; 以及波面延迟板，其设置在所述平面天线部件上，并且改变从所述波导管供给的电磁波的波长; 从上方覆盖波片延伸板和平面天线构件的盖构件。波长相位差板使用电介质材料构成，平面天线部件与盖部件之间的区域的介电常数在与平面天线部件的上表面平行的面上不均匀。

3. 发明授权

US08183165B2 Plasma processing method 失效
标题翻译：等离子体处理方法
公开(公告)号：US08183165B2
公开(公告)日：2012-05-22
申请号：US13019093
申请日：2011-02-01
申请人： Seiji Matsuyama , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
发明人： Seiji Matsuyama , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
IPC分类号： H01L21/318
CPC分类号： C23C8/36 , H01J37/32192 , H01L21/02332 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L29/518
摘要： According to the present invention,when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to from an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently,it is possible to improve quality of the oxynitride film, resulting in a reduced leadage current, an improved operating speed, and improved NBTI resistance.
摘要翻译：根据本发明，当通过微波产生的等离子体的氮化处理被施加到其上形成有氧化膜的基板上，从而形成氮氧化物膜时，间歇地供给微波。通过间歇地供给微波，根据电子温度的降低，离子轰击降低，氮化物在氧化膜中的扩散速度降低，结果使得可以防止氮浓缩到基板 - 氮氧化物膜的侧面界面，以增加其中的氮浓度。因此，可以提高氧氮化膜的质量，导致降低的引线电流，提高的工作速度和改善的NBTI电阻。

4. 发明授权

US07897518B2 Plasma processing method and computer storage medium 失效
标题翻译：等离子体处理方法和计算机存储介质
公开(公告)号：US07897518B2
公开(公告)日：2011-03-01
申请号：US12757802
申请日：2010-04-09
申请人： Seiji Matsuyama , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
发明人： Seiji Matsuyama , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
IPC分类号： H01L21/31
CPC分类号： C23C8/36 , H01J37/32192 , H01L21/02332 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L29/518
摘要： According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.
摘要翻译：根据本发明，当通过微波产生的等离子体的氮化处理被施加到其上形成氧化膜的基板上以形成氧氮化物膜时，间歇地供给微波。通过间歇地供给微波，根据电子温度的降低，离子轰击降低，氮化物在氧化膜中的扩散速度降低，结果使得可以防止氮浓缩到基板 - 氮氧化物膜的侧面界面，以增加其中的氮浓度。因此，可以提高氮氧化物膜的质量，导致漏电流减小，操作速度提高，NBTI电阻改善。

5. 发明申请

US20100196627A1 PLASMA PROCESSING METHOD AND COMPUTER STORAGE MEDIUM 失效
标题翻译：等离子体处理方法和计算机存储介质
公开(公告)号：US20100196627A1
公开(公告)日：2010-08-05
申请号：US12757802
申请日：2010-04-09
申请人： Seiji MATSUYAMA , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
发明人： Seiji MATSUYAMA , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
IPC分类号： C23C16/513 , C23C16/34
CPC分类号： C23C8/36 , H01J37/32192 , H01L21/02332 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L29/518
摘要： According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.
摘要翻译：根据本发明，当通过微波产生的等离子体的氮化处理被施加到其上形成氧化膜的基板上以形成氧氮化物膜时，间歇地供给微波。通过间歇地供给微波，根据电子温度的降低，离子轰击降低，氮化物在氧化膜中的扩散速度降低，结果使得可以防止氮浓缩到基板 - 氮氧化物膜的侧面界面，以增加其中的氮浓度。因此，可以提高氮氧化物膜的质量，导致漏电流减小，操作速度提高，NBTI电阻改善。

6. 发明授权

US07723241B2 Plasma processing method and computer storage medium 失效
标题翻译：等离子体处理方法和计算机存储介质
公开(公告)号：US07723241B2
公开(公告)日：2010-05-25
申请号：US11514236
申请日：2006-09-01
申请人： Seiji Matsuyama , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
发明人： Seiji Matsuyama , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
IPC分类号： H01L21/31
CPC分类号： C23C8/36 , H01J37/32192 , H01L21/02332 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L29/518
摘要： According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.
摘要翻译：根据本发明，当通过微波产生的等离子体的氮化处理被施加到其上形成氧化膜的基板上以形成氧氮化物膜时，间歇地供给微波。通过间歇地供给微波，根据电子温度的降低，离子轰击降低，氮化物在氧化膜中的扩散速度降低，结果使得可以防止氮浓缩到基板 - 氮氧化物膜的侧面界面，以增加其中的氮浓度。因此，可以提高氮氧化物膜的质量，导致漏电流减小，操作速度提高，NBTI电阻改善。

7. 发明授权

US07226524B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US07226524B2
公开(公告)日：2007-06-05
申请号：US10498672
申请日：2002-11-25
申请人： Shigeru Kasai , Nobuhiko Yamamoto , Hikaru Adachi , Yuki Osada
发明人： Shigeru Kasai , Nobuhiko Yamamoto , Hikaru Adachi , Yuki Osada
IPC分类号： C23C16/00 , H01L21/306 , C23F1/00
CPC分类号： H01J37/32256 , H01J37/32192 , H01J37/32568 , H01P5/103
摘要： A plasma processing apparatus includes an evacuatable processing vessel; a workpiece mount base for mounting thereon an object to be processed; a microwave transmitting plate provided in an opening of a ceiling of the processing vessel; a planar antenna member for supplying a microwave into the processing vessel via the microwave transmitting plate; a shield lid grounded to cover a top of the planar antenna member; a waveguide for guiding the microwave to the planar antenna member; a member elevating mechanism for relatively varying a vertical distance between the planar antenna member and the shield lid; a tuning rod insertable into the waveguide; a tuning rod driving mechanism for moving the tuning rod to adjust an insert amount thereof; and a matching control section for controlling an elevation amount of the planar antenna member and the insert amount of the tuning rod to obtain a matching adjustment.
摘要翻译：等离子体处理装置包括可抽空处理容器; 用于在其上安装待处理物体的工件安装基座; 设置在处理容器的天花板的开口中的微波传输板; 平面天线构件，用于经由微波发射板向处理容器提供微波; 屏蔽盖，其接地以覆盖所述平面天线构件的顶部; 用于将微波引导到平面天线构件的波导; 用于相对改变平面天线构件和屏蔽盖之间的垂直距离的构件升降机构; 调谐杆可插入到波导中; 调节杆驱动机构，用于移动调音杆以调节其插入量; 以及匹配控制部分，用于控制平面天线部件的仰角量和调节杆的插入量以获得匹配调整。

8. 发明申请

US20110124202A1 PLASMA PROCESSING METHOD AND COMPUTER STORAGE MEDIUM 失效
标题翻译：等离子体处理方法和计算机存储介质
公开(公告)号：US20110124202A1
公开(公告)日：2011-05-26
申请号：US13019093
申请日：2011-02-01
申请人： Seiji MATSUYAMA , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
发明人： Seiji MATSUYAMA , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
IPC分类号： H01L21/318
CPC分类号： C23C8/36 , H01J37/32192 , H01L21/02332 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L29/518
摘要： According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.
摘要翻译：根据本发明，当通过微波产生的等离子体的氮化处理被施加到其上形成氧化膜的基板上以形成氧氮化物膜时，间歇地供给微波。通过间歇地供给微波，根据电子温度的降低，离子轰击降低，氮化物在氧化膜中的扩散速度降低，结果使得可以防止氮浓缩到基板 - 氮氧化物膜的侧面界面，以增加其中的氮浓度。因此，可以提高氮氧化物膜的质量，导致漏电流减小，操作速度提高，NBTI电阻改善。

9. 发明授权

US07910495B2 Plasma oxidizing method, plasma processing apparatus, and storage medium 失效
标题翻译：等离子体氧化法，等离子体处理装置和储存介质
公开(公告)号：US07910495B2
公开(公告)日：2011-03-22
申请号：US12443589
申请日：2007-09-27
申请人： Toshihiko Shiozawa , Yoshiro Kabe , Takashi Kobayashi , Hikaru Adachi , Junichi Kitagawa , Nobuhiko Yamamoto
发明人： Toshihiko Shiozawa , Yoshiro Kabe , Takashi Kobayashi , Hikaru Adachi , Junichi Kitagawa , Nobuhiko Yamamoto
IPC分类号： H01L21/469
CPC分类号： H01L21/76229 , H01L21/02238 , H01L21/02252 , H01L21/31662 , H01L21/7621
摘要： A plasma oxidizing method includes a step of placing an object to be processed and having a surface containing silicon on a susceptor disposed in a processing vessel of a plasma processing apparatus, a step of producing a plasma from a processing gas containing oxygen in the processing vessel, a step of supplying high-frequency electric power to the susceptor and applying a high-frequency bias to the object to be processed when the plasma is produced, and a step of forming a silicon oxide film by oxidizing silicon in the surface of the object to be processed by the plasma.
摘要翻译：等离子体氧化方法包括将待处理物体放置在等离子体处理装置的处理容器中的基座上的步骤，在处理容器内从含有氧的处理气体生成等离子体的步骤向基座提供高频电力的步骤，在制造等离子体时向待处理物体施加高频偏压的步骤，以及通过在物体的表面氧化硅来形成氧化硅膜的步骤由等离子体处理。

10. 发明申请

US20100307684A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20100307684A1
公开(公告)日：2010-12-09
申请号：US12680321
申请日：2008-09-26
申请人： Ryosaku Ota , Hikaru Adachi , Toshio Nakanishi , Atsushi Ueda , Songyun Kang , Paul Moroz , Peter Ventzek
发明人： Ryosaku Ota , Hikaru Adachi , Toshio Nakanishi , Atsushi Ueda , Songyun Kang , Paul Moroz , Peter Ventzek
IPC分类号： H01L21/306
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/3222 , H01J37/32229
摘要： A microwave plasma processing apparatus (100) of a slot antenna type includes a plane antenna plate (31) constituting a flat waveguide and a cover (34) of a conductive member. The cover (34) is provided with a stub (43) as a second waveguide for adjusting electric field-distribution in the flat waveguide. The stub (43) is provided in the cover (34) of the conductive member. In plan view, the stub (43) is arranged to overlap slots (32) constituting a slot pair arranged at the outermost circumference of the plane antenna plate (31). By appropriately arranging the stub, it is possible to control electric field-distribution in the flat waveguide thereby to generate a uniform plasma.
摘要翻译：缝隙天线类型的微波等离子体处理装置（100）包括构成平坦波导的平面天线板（31）和导电部件的盖（34）。盖34具有作为调整平面波导中的电场分布的第二波导的短截线43。短路（43）设置在导电构件的盖（34）中。在平面图中，短截线体43被布置成与构成设置在平面天线板31的最外圆周处的缝隙对的缝隙重叠。通过适当地布置短截线，可以控制平坦波导中的电场分布，从而产生均匀的等离子体。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式