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1. 发明申请

US20110124202A1 PLASMA PROCESSING METHOD AND COMPUTER STORAGE MEDIUM 失效
标题翻译：等离子体处理方法和计算机存储介质
公开(公告)号：US20110124202A1
公开(公告)日：2011-05-26
申请号：US13019093
申请日：2011-02-01
申请人： Seiji MATSUYAMA , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
发明人： Seiji MATSUYAMA , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
IPC分类号： H01L21/318
CPC分类号： C23C8/36 , H01J37/32192 , H01L21/02332 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L29/518
摘要： According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.
摘要翻译：根据本发明，当通过微波产生的等离子体的氮化处理被施加到其上形成氧化膜的基板上以形成氧氮化物膜时，间歇地供给微波。通过间歇地供给微波，根据电子温度的降低，离子轰击降低，氮化物在氧化膜中的扩散速度降低，结果使得可以防止氮浓缩到基板 - 氮氧化物膜的侧面界面，以增加其中的氮浓度。因此，可以提高氮氧化物膜的质量，导致漏电流减小，操作速度提高，NBTI电阻改善。

2. 发明申请

US20070059944A1 Plasma processing method and computer storage medium 失效
标题翻译：等离子体处理方法和计算机存储介质
公开(公告)号：US20070059944A1
公开(公告)日：2007-03-15
申请号：US11514236
申请日：2006-09-01
申请人： Seiji Matsuyama , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
发明人： Seiji Matsuyama , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
IPC分类号： H01L21/471
CPC分类号： C23C8/36 , H01J37/32192 , H01L21/02332 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L29/518
摘要： According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.
摘要翻译：根据本发明，当通过微波产生的等离子体的氮化处理被施加到其上形成氧化膜的基板上以形成氧氮化物膜时，间歇地供给微波。通过间歇地供给微波，根据电子温度的降低，离子轰击降低，氮化物在氧化膜中的扩散速度降低，结果使得可以防止氮浓缩到基板 - 氮氧化物膜的侧面界面，以增加其中的氮浓度。因此，可以提高氮氧化物膜的质量，导致漏电流减小，操作速度提高，NBTI电阻改善。

3. 发明授权

US08183165B2 Plasma processing method 失效
标题翻译：等离子体处理方法
公开(公告)号：US08183165B2
公开(公告)日：2012-05-22
申请号：US13019093
申请日：2011-02-01
申请人： Seiji Matsuyama , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
发明人： Seiji Matsuyama , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
IPC分类号： H01L21/318
CPC分类号： C23C8/36 , H01J37/32192 , H01L21/02332 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L29/518
摘要： According to the present invention,when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to from an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently,it is possible to improve quality of the oxynitride film, resulting in a reduced leadage current, an improved operating speed, and improved NBTI resistance.
摘要翻译：根据本发明，当通过微波产生的等离子体的氮化处理被施加到其上形成有氧化膜的基板上，从而形成氮氧化物膜时，间歇地供给微波。通过间歇地供给微波，根据电子温度的降低，离子轰击降低，氮化物在氧化膜中的扩散速度降低，结果使得可以防止氮浓缩到基板 - 氮氧化物膜的侧面界面，以增加其中的氮浓度。因此，可以提高氧氮化膜的质量，导致降低的引线电流，提高的工作速度和改善的NBTI电阻。

4. 发明授权

US07897518B2 Plasma processing method and computer storage medium 失效
标题翻译：等离子体处理方法和计算机存储介质
公开(公告)号：US07897518B2
公开(公告)日：2011-03-01
申请号：US12757802
申请日：2010-04-09
申请人： Seiji Matsuyama , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
发明人： Seiji Matsuyama , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
IPC分类号： H01L21/31
CPC分类号： C23C8/36 , H01J37/32192 , H01L21/02332 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L29/518
摘要： According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.
摘要翻译：根据本发明，当通过微波产生的等离子体的氮化处理被施加到其上形成氧化膜的基板上以形成氧氮化物膜时，间歇地供给微波。通过间歇地供给微波，根据电子温度的降低，离子轰击降低，氮化物在氧化膜中的扩散速度降低，结果使得可以防止氮浓缩到基板 - 氮氧化物膜的侧面界面，以增加其中的氮浓度。因此，可以提高氮氧化物膜的质量，导致漏电流减小，操作速度提高，NBTI电阻改善。

5. 发明申请

US20100196627A1 PLASMA PROCESSING METHOD AND COMPUTER STORAGE MEDIUM 失效
标题翻译：等离子体处理方法和计算机存储介质
公开(公告)号：US20100196627A1
公开(公告)日：2010-08-05
申请号：US12757802
申请日：2010-04-09
申请人： Seiji MATSUYAMA , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
发明人： Seiji MATSUYAMA , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
IPC分类号： C23C16/513 , C23C16/34
CPC分类号： C23C8/36 , H01J37/32192 , H01L21/02332 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L29/518
摘要： According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.
摘要翻译：根据本发明，当通过微波产生的等离子体的氮化处理被施加到其上形成氧化膜的基板上以形成氧氮化物膜时，间歇地供给微波。通过间歇地供给微波，根据电子温度的降低，离子轰击降低，氮化物在氧化膜中的扩散速度降低，结果使得可以防止氮浓缩到基板 - 氮氧化物膜的侧面界面，以增加其中的氮浓度。因此，可以提高氮氧化物膜的质量，导致漏电流减小，操作速度提高，NBTI电阻改善。

6. 发明授权

US07723241B2 Plasma processing method and computer storage medium 失效
标题翻译：等离子体处理方法和计算机存储介质
公开(公告)号：US07723241B2
公开(公告)日：2010-05-25
申请号：US11514236
申请日：2006-09-01
申请人： Seiji Matsuyama , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
发明人： Seiji Matsuyama , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
IPC分类号： H01L21/31
CPC分类号： C23C8/36 , H01J37/32192 , H01L21/02332 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L29/518
摘要： According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.
摘要翻译：根据本发明，当通过微波产生的等离子体的氮化处理被施加到其上形成氧化膜的基板上以形成氧氮化物膜时，间歇地供给微波。通过间歇地供给微波，根据电子温度的降低，离子轰击降低，氮化物在氧化膜中的扩散速度降低，结果使得可以防止氮浓缩到基板 - 氮氧化物膜的侧面界面，以增加其中的氮浓度。因此，可以提高氮氧化物膜的质量，导致漏电流减小，操作速度提高，NBTI电阻改善。

7. 发明授权

US08076252B2 Substrate processing method and substrate processing apparatus 失效
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US08076252B2
公开(公告)日：2011-12-13
申请号：US11997045
申请日：2006-07-28
申请人： Koichi Takatsuki
发明人： Koichi Takatsuki
IPC分类号： H01L21/00
CPC分类号： H01L21/31662 , C23C16/45565 , C23C16/46 , H01J37/32192 , H01J2237/2001 , H01L21/02238 , H01L21/02252 , H01L21/67109
摘要： In a substrate processing method, a substrate to be processed is mounted on a mounting table in a processing chamber of a substrate processing apparatus, and while heating the substrate by a heating unit through the mounting table to a processing temperature of 700° C. or higher, the substrate is processed. The substrate to be processed is loaded into the processing chamber, a first preliminary heating is performed until the substrate reaches a prescribed temperature while being mounted on the mounting table. Then, substrate supporting pins of the mounting table are elevated, and a second preliminary heating is performed in a state where the substrate is held on the substrate supporting pins. Then, the substrate supporting pins are moved down to mount the substrate on the mounting table and a process such as plasma oxidation is performed thereon.
摘要翻译：在基板处理方法中，将待处理基板安装在基板处理装置的处理室中的安装台上，并且通过加热单元通过安装台将基板加热至700℃的加工温度，或更高的，底物被处理。将待处理的基板装载到处理室中，进行第一预备加热，直到基板在安装在安装台上达到规定温度。然后，安装台的基板支撑销升高，并且在基板被保持在基板支撑销上的状态下进行第二预热。然后，将基板支撑销向下移动以将基板安装在安装台上，并且在其上执行诸如等离子体氧化的工艺。

8. 发明授权

US08394231B2 Plasma process device and plasma process method 有权
标题翻译：等离子体工艺装置和等离子体处理方法
公开(公告)号：US08394231B2
公开(公告)日：2013-03-12
申请号：US11656379
申请日：2007-01-23
申请人： Koichi Takatsuki , Hikaru Yoshitaka , Shigeo Ashigaki , Yoichi Inoue , Takashi Akahori , Shuuichi Ishizuka , Syoichi Abe , Takashi Suzuki , Kohei Kawamura , Hidenori Miyoshi , Gishi Chung , Yasuhiro Oshima , Hiroyuki Takahashi
发明人： Koichi Takatsuki , Hikaru Yoshitaka , Shigeo Ashigaki , Yoichi Inoue , Takashi Akahori , Shuuichi Ishizuka , Syoichi Abe , Takashi Suzuki , Kohei Kawamura , Hidenori Miyoshi , Gishi Chung , Yasuhiro Oshima , Hiroyuki Takahashi
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00 , H05H1/24 , H01J7/24
CPC分类号： H01J37/32009 , H01J37/3244 , H01J37/32541
摘要： That surface of an electrode plate 20 which is opposite to a susceptor 10 has a projection shape. The electrode plate 20 is fitted in an opening 26a of shield ring 26 at a projection 20a. At this time, the thickness of the projection 20a is approximately the same as the thickness of the shield ring 26. Accordingly, the electrode plate 20 and the shield ring 26 form substantially the same plane. The major surface of the projection 20a has a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plate 20 is formed of, for example, SiC.
摘要翻译：与基座10相对的电极板20的表面具有突出形状。电极板20在突起20a处嵌合在屏蔽环26的开口26a中。此时，突起20a的厚度与屏蔽环26的厚度大致相同。因此，电极板20和屏蔽环26形成大致相同的平面。突起20a的主表面的直径为晶片W的直径的1.2〜1.5倍。电极板20例如由SiC形成。

9. 发明申请

US20130017690A1 PLASMA NITRIDING METHOD AND PLASMA NITRIDING APPARATUS 审中-公开
标题翻译：等离子体氮化法和等离子体氮化装置
公开(公告)号：US20130017690A1
公开(公告)日：2013-01-17
申请号：US13638284
申请日：2011-03-30
申请人： Koichi Takatsuki , Kazuyoshi Yamazaki , Hideyuki Noguchi , Daisuke Tamura , Tomohiro Saito
发明人： Koichi Takatsuki , Kazuyoshi Yamazaki , Hideyuki Noguchi , Daisuke Tamura , Tomohiro Saito
IPC分类号： C23C16/511 , H01L21/314
CPC分类号： H01L21/02332 , H01J37/32192 , H01J2237/3387 , H01L21/0234
摘要： In a plasma nitriding method, a processing gas containing nitrogen gas and rare gas is introduced into a processing chamber of a plasma processing apparatus by setting a flow rate thereof as a total flow rate [mL/min(sccm)] of the processing gas per 1 L volume of the processing chamber within a range from 1.5 (mL/min)/L to 13 (mL/min)/L. Further, a nitriding process is performed on oxygen-containing films of target objects to be processed by generating a nitrogen-containing plasma in the processing chamber and while exchanging the target objects.
摘要翻译：在等离子体氮化方法中，将含有氮气和稀有气体的处理气体通过将其流量设定为处理气体的总流量[mL / min（sccm）]而导入等离子体处理装置的处理室中 1L处理室的体积在1.5（mL / min）/ L至13（mL / min）/ L的范围内。此外，通过在处理室中产生含氮等离子体并且在更换目标物体的同时，对待处理的目标物体的含氧膜进行氮化处理。

10. 发明申请

US20100144159A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 失效
标题翻译：基板加工方法和基板加工装置
公开(公告)号：US20100144159A1
公开(公告)日：2010-06-10
申请号：US11997045
申请日：2006-07-28
申请人： Koichi Takatsuki
发明人： Koichi Takatsuki
IPC分类号： H01L21/302 , B05C11/00
CPC分类号： H01L21/31662 , C23C16/45565 , C23C16/46 , H01J37/32192 , H01J2237/2001 , H01L21/02238 , H01L21/02252 , H01L21/67109
摘要： In a substrate processing method, a substrate to be processed is mounted on a mounting table in a processing chamber of a substrate processing apparatus, and while heating the substrate by a heating unit through the mounting table to a processing temperature of 700° C. or higher, the substrate is processed. The substrate to be processed is loaded into the processing chamber, a first preliminary heating is performed until the substrate reaches a prescribed temperature while being mounted on the mounting table. Then, substrate supporting pins of the mounting table are elevated, and a second preliminary heating is performed in a state where the substrate is held on the substrate supporting pins. Then, the substrate supporting pins are moved down to mount the substrate on the mounting table and a process such as plasma oxidation is performed thereon.
摘要翻译：在基板处理方法中，将待处理基板安装在基板处理装置的处理室中的安装台上，并且通过加热单元通过安装台将基板加热至700℃的加工温度，或更高的，底物被处理。将待处理的基板装载到处理室中，进行第一预备加热，直到基板在安装在安装台上达到规定温度。然后，安装台的基板支撑销升高，并且在基板被保持在基板支撑销上的状态下进行第二预热。然后，将基板支撑销向下移动以将基板安装在安装台上，并且在其上执行诸如等离子体氧化的工艺。

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