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    • 1. 发明申请
    • RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN
    • 耐蚀组合物和形成耐力图案的方法
    • US20120214101A1
    • 2012-08-23
    • US13398555
    • 2012-02-16
    • Hiroaki ShimizuSho AbeHideto Nito
    • Hiroaki ShimizuSho AbeHideto Nito
    • G03F7/20G03F7/027
    • G03F7/0045G03F7/0046G03F7/0382G03F7/0397G03F7/2041G03F7/30G03F7/325Y10S430/12Y10S430/122Y10S430/123
    • A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid, a basic-compound component (C) and an acid-generator component (B) which generates acid upon exposure, the component (B) including a compound represented by formula (b1), and the component (C) including at least one compound represented by formulas (c1) to (c3) (wherein Z1 represents a ring skeleton-containing hydrocarbon group, Q1 represents a divalent linking group containing oxygen, Y1 represents a fluorinated alkylene group, M+ represents an organic cation, R1 represents a fluorinated alkyl group or a hydrocarbon group, L1+ and L2+ represents a sulfonium or an iodonium, Z2 represents a hydrogen atom or a hydrocarbon group, Y2 represents a single bond or a divalent linking group containing no fluorine, R2 represents an organic group, Y3 represents an alkylene group or an arylene group; and Rf represents a fluorine-containing hydrocarbon group).
    • 一种抗蚀剂组合物,其包含在酸作用下在显影液中溶解度变化的碱成分(A),暴露时产生酸的碱性化合物成分(C)和酸发生剂成分(B),成分(B )和包含式(c1)〜(c3)所示的至少一种化合物的组分(C)(其中Z1表示含环骨架的烃基,Q1表示二价连接基团 含有氧的基团,Y 1表示氟化亚烷基,M +表示有机阳离子,R1表示氟代烷基或烃基,L1 +,L2 +表示锍或碘,Z2表示氢原子或烃基,Y2表示 单键或不含氟的二价连接基团,R 2表示有机基团,Y 3表示亚烷基或亚芳基,Rf表示含氟烃基)。
    • 7. 发明申请
    • Resist composition and method of forming resist pattern
    • 抗蚀剂图案的抗蚀剂组成和方法
    • US20090297980A1
    • 2009-12-03
    • US12453857
    • 2009-05-26
    • Jun IwashitaShogo MatsumaruSho Abe
    • Jun IwashitaShogo MatsumaruSho Abe
    • G03F7/20G03F7/004
    • G03F7/0397G03F7/0045G03F7/0382Y10S430/111
    • A novel resist composition and method of forming a resist pattern that can be used in lithography applications. The resist composition includes a base component (A) that exhibits changed solubility in an alkali developing solution under action of acid, and an acid generator component (B) that generates acid upon exposure, wherein the base component (A) contains a polymer compound (A1) having a structural unit (a0) represented by general formula (a0-1) shown below, wherein R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a fluorinated alkyl group of 1 to 5 carbon atoms, R2 and R3 each independently represents a hydrogen atom or an alkyl group that may include an oxygen atom at an arbitrary position, or R2 and R3 are bonded together to form an alkylene group, and W represents a cyclic alkylene group that may include an oxygen atom at an arbitrary position.
    • 形成可用于光刻应用的抗蚀剂图案的新型抗蚀剂组合物和方法。 抗蚀剂组合物包括在酸的作用下在碱性显影液中显示改变的溶解性的基础组分(A)和暴露时产生酸的酸产生剂组分(B),其中所述碱性组分(A)含有高分子化合物 A1)具有下述通式(a0-1)表示的结构单元(a0),其中R1表示氢原子,1〜5个碳原子的烷基或1〜5个碳原子的氟化烷基,R2 和R 3各自独立地表示氢原子或可以在任意位置含有氧原子的烷基,或者R 2和R 3结合在一起形成亚烷基,W表示可以包含氧原子的环状亚烷基 任意的位置
    • 8. 发明授权
    • Method of forming resist pattern and negative resist composition
    • 形成抗蚀剂图案和负性抗蚀剂组合物的方法
    • US08859187B2
    • 2014-10-14
    • US12438906
    • 2007-10-19
    • Ken TanakaSho AbeShigeru Yokoi
    • Ken TanakaSho AbeShigeru Yokoi
    • G03F7/095G03F7/038G03F7/039G03F7/20G03F7/30
    • G03F7/0035G03F7/0048G03F7/0382G03F7/0397H01L21/0271H01L21/3086H01L21/3088
    • A novel method of forming a resist pattern in which thickness loss from the resist pattern is reduced, and a negative resist composition that can be used in this method of forming a resist pattern. The method of forming a resist pattern includes: forming a first resist film by applying a first resist composition to a support, forming a first resist pattern by selectively exposing the first resist film through a first mask pattern and then developing the first resist film, forming a second resist film by applying a negative resist composition containing an ether-based organic solvent (S″) having no hydroxyl groups onto the support having the first resist pattern formed thereon, and forming a resist pattern by selectively exposing the second resist film through a second mask pattern and then developing the second resist film.
    • 形成抗蚀剂图案的厚度损失降低的抗蚀剂图案的新颖方法以及可用于形成抗蚀剂图案的方法中的负型抗蚀剂组合物。 形成抗蚀剂图案的方法包括:通过将第一抗蚀剂组合物施加到载体上来形成第一抗蚀剂膜,通过选择性地将第一抗蚀剂膜通过第一掩模图案曝光,然后显影第一抗蚀剂膜,形成第一抗蚀剂图案,形成第一抗蚀剂图案 通过在其上形成有第一抗蚀剂图案的载体上涂布含有无羟基的醚类有机溶剂(S“)的负性抗蚀剂组合物,形成第二抗蚀剂膜,并通过选择性地将第二抗蚀剂膜曝光 第二掩模图案,然后显影第二抗蚀剂膜。
    • 9. 发明授权
    • Resist composition and method of forming resist pattern
    • 抗蚀剂图案的抗蚀剂组成和方法
    • US08034536B2
    • 2011-10-11
    • US12453857
    • 2009-05-26
    • Jun IwashitaShogo MatsumaruSho Abe
    • Jun IwashitaShogo MatsumaruSho Abe
    • G03F7/004G03F7/30
    • G03F7/0397G03F7/0045G03F7/0382Y10S430/111
    • A novel resist composition and method of forming a resist pattern that can be used in lithography applications. The resist composition includes a base component (A) that exhibits changed solubility in an alkali developing solution under action of acid, and an acid generator component (B) that generates acid upon exposure, wherein the base component (A) contains a polymer compound (A1) having a structural unit (a0) represented by general formula (a0-1) shown below, wherein R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a fluorinated alkyl group of 1 to 5 carbon atoms, R2 and R3 each independently represents a hydrogen atom or an alkyl group that may include an oxygen atom at an arbitrary position, or R2 and R3 are bonded together to form an alkylene group, and W represents a cyclic alkylene group that may include an oxygen atom at an arbitrary position.
    • 形成可用于光刻应用的抗蚀剂图案的新型抗蚀剂组合物和方法。 抗蚀剂组合物包括在酸的作用下在碱性显影液中显示改变的溶解性的基础组分(A)和暴露时产生酸的酸产生剂组分(B),其中所述碱性组分(A)含有高分子化合物 A1)具有下述通式(a0-1)表示的结构单元(a0),其中R1表示氢原子,1〜5个碳原子的烷基或1〜5个碳原子的氟化烷基,R2 和R 3各自独立地表示氢原子或可以在任意位置含有氧原子的烷基,或者R 2和R 3结合在一起形成亚烷基,W表示可以包含氧原子的环状亚烷基 任意的位置