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    • 2. 发明专利
    • Multilayer rice ball
    • 多层米铃
    • JP2007319155A
    • 2007-12-13
    • JP2006183871
    • 2006-06-05
    • Hideki Tsunoda英喜 角田
    • TSUNODA HIDEKI
    • A23L7/10
    • PROBLEM TO BE SOLVED: To provide a rice ball preventing ingredients from spilling, and enabling appreciation of the taste of boiled white rice when holding in the mouth at first, and the taste of the ingredients when crushing with the teeth. SOLUTION: This rice ball is formed in a multilayer structure of having white boiled rice in an external layer and boiled rice mixed with finely chopped or finely broken ingredients in an internal layer. As a result of this, the rice ball prevents the ingredients from spilling when eating, and has appearance the same as that of a conventional rice ball. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供防止成分溢出的米粒球,并且首先在口中保持煮熟的白米饭的味道,以及当用牙齿粉碎时成分的味道。 解决方案:该米球形成为在外层中具有白煮饭的多层结构,并且在内层中与精细切碎或细碎的成分混合的煮米饭。 结果,饭球防止成分在进食时溢出,并且具有与常规米饭相同的外观。 版权所有(C)2008,JPO&INPIT
    • 6. 发明授权
    • Semiconductor device having a protection circuit, and electronic system
including the same
    • 具有保护电路的半导体装置和包括该保护电路的电子系统
    • US5638246A
    • 1997-06-10
    • US10572
    • 1993-01-28
    • Kozo SakamotoIsao YoshidaMasatoshi MorikawaShigeo OhtakaHideki Tsunoda
    • Kozo SakamotoIsao YoshidaMasatoshi MorikawaShigeo OhtakaHideki Tsunoda
    • H02H5/04H03K17/08H03K17/082
    • H02H5/044H03K17/0822H03K2017/0806
    • In a semiconductor device including a power MOSFET (M.sub.0) for the output stage, a temperature detection circuit produces an output signal upon detecting an abnormal rise in the chip temperature, the signal turns on a set input element (M.sub.1) in a latch circuit so that the latch circuit becomes a set state, the set output of the latch circuit turns on a control element (M.sub.5), causing the power MOSFET to become non-conductive so that it is protected from destruction. The latch circuit is not brought to a reset state even if the external gate terminal of the device is brought to zero volt. With a voltage outside the range of the normal input signal, e.g., a large negative voltage, being applied to the external gate terminal, the gate capacitance of the control element (M.sub.5) discharges, and consequently the latch circuit is brought to the reset state and the protective operation is cancelled. The semiconductor device is further provided with an external reset terminal, and the protective operation can also be cancelled through the application of a reset signal to the external reset terminal. The semiconductor device is protected from destruction and also from deterioration of characteristics of the power MOSFET (M.sub.0), and yet the protective operation is not cancelled erroneously by the normal input signal.
    • 在包括用于输出级的功率MOSFET(M0)的半导体器件中,温度检测电路在检测到芯片温度的异常升高时产生输出信号,该信号使锁存电路中的设定输入元件(M1)接通,从而 锁存电路变为置位状态,锁存电路的设定输出导通控制元件(M5),使功率MOSFET变得不导通,从而防止其破坏。 即使器件的外部栅极端子达到零伏,锁存电路也不会进入复位状态。 在外部栅极端子施加正常输入信号(例如,大的负电压)的范围之外的电压时,控制元件(M5)的栅极电容放电,因此锁存电路进入复位状态 并且保护操作被取消。 半导体器件还具有外部复位端子,并且还可以通过向外部复位端子施加复位信号来取消保护操作。 保护半导体器件不受破坏,也可以防止功率MOSFET(M0)的特性恶化,而保护操作也不会被正常输入信号错误地消除。