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1. 发明申请

US20130256125A1 SUBSTRATE PROCESSING SYSTEM WITH MECHANICALLY FLOATING TARGET ASSEMBLY 有权
标题翻译：具有机械浮动目标组件的基板处理系统
公开(公告)号：US20130256125A1
公开(公告)日：2013-10-03
申请号：US13435949
申请日：2012-03-30
申请人： DONNY YOUNG , ALAN RITCHIE , UDAY PAI , MUHAMMAD RASHEED , KEITH A. MILLER
发明人： DONNY YOUNG , ALAN RITCHIE , UDAY PAI , MUHAMMAD RASHEED , KEITH A. MILLER
IPC分类号： C23C14/34 , C23C14/35
CPC分类号： C23C14/3407 , C23C14/35 , H01J37/3417 , H01J37/3435
摘要： Substrate processing systems are provided herein. In some embodiments, a substrate processing system may include a target assembly having a target comprising a source material to be deposited on a substrate; a grounding assembly disposed about the target assembly and having a first surface that is generally parallel to and opposite a backside of the target assembly; a support member coupled to the grounding assembly to support the target assembly within the grounding assembly; one or more insulators disposed between the backside of the target assembly and the first surface of the grounding assembly; and one or more biasing elements disposed between the first surface of the grounding assembly and the backside of the target assembly to bias the target assembly toward the support member.
摘要翻译：本文提供基板处理系统。在一些实施例中，衬底处理系统可以包括目标组件，其具有包含待沉积在衬底上的源材料的靶; 设置在所述目标组件周围并且具有大致平行于所述目标组件的背面并相对于所述目标组件的后侧的第一表面的接地组件; 联接到所述接地组件以将所述目标组件支撑在所述接地组件内的支撑构件; 设置在目标组件的背面与接地组件的第一表面之间的一个或多个绝缘体; 以及设置在接地组件的第一表面和目标组件的后侧之间的一个或多个偏置元件，以将目标组件朝向支撑构件偏压。

2. 发明申请

US20130153412A1 APPARATUS FOR ENABLING CONCENTRICITY OF PLASMA DARK SPACE 有权
标题翻译：实现等离子体空间密集度的设备
公开(公告)号：US20130153412A1
公开(公告)日：2013-06-20
申请号：US13327689
申请日：2011-12-15
申请人： ALAN RITCHIE , DONNY YOUNG , KEITH A. MILLER , MUHAMMAD RASHEED , STEVE SANSONI , Uday Pai
发明人： ALAN RITCHIE , DONNY YOUNG , KEITH A. MILLER , MUHAMMAD RASHEED , STEVE SANSONI , Uday Pai
IPC分类号： C23C14/34
CPC分类号： C23C14/34 , H01J37/3417 , H01J37/3423 , H01J37/3435 , H01J37/3441
摘要： In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.
摘要翻译：在一些实施例中，衬底处理装置可以包括腔体; 设置在所述室主体顶部的盖子; 耦合到所述盖的目标组件，所述目标组件包括待沉积在衬底上的材料的靶; 环形暗空间屏蔽，其具有围绕靶的外边缘设置的内壁; 邻近所述暗室屏蔽的外边缘设置的密封环; 以及支撑构件，其紧邻所述支撑构件的外端并且径向向内延伸，使得所述支撑构件支撑所述密封环和所述环形暗空间屏蔽，其中所述支撑构件在联接到所述盖时提供足够的压缩，使得在支撑构件和密封环以及密封环和目标组件之间形成密封件。

3. 发明申请

US20130256127A1 SUBSTRATE PROCESSING SYSTEM HAVING SYMMETRIC RF DISTRIBUTION AND RETURN PATHS 有权
标题翻译：具有对称射频分配和返回模式的基板处理系统
公开(公告)号：US20130256127A1
公开(公告)日：2013-10-03
申请号：US13436776
申请日：2012-03-30
申请人： DONNY YOUNG , ALAN RITCHIE , MUHAMMAD RASHEED , KEITH A. MILLER
发明人： DONNY YOUNG , ALAN RITCHIE , MUHAMMAD RASHEED , KEITH A. MILLER
IPC分类号： C23C14/35 , C23C14/34
CPC分类号： C23C14/3407 , C23C14/35 , H01J37/32577 , H01J37/3405 , H01J37/3411 , H01J37/3414
摘要： A processing system may include a target having a central axis normal thereto; a source distribution plate having a target facing side opposing a backside of the target, wherein the source distribution plate includes a plurality of first features such that a first distance of a first radial RF distribution path along a given first diameter is about equal to a second distance of an opposing second radial RF distribution path along the given first diameter; and a ground plate opposing a target opposing side of the source distribution plate and having a plurality of second features disposed about the central axis and corresponding to the plurality of first features, wherein a third distance of a first radial RF return path along a given second diameter is about equal to a fourth distance of an opposing second radial RF return path along the given second diameter.
摘要翻译：处理系统可以包括具有与其正交的中心轴的目标; 源分布板，其具有与所述靶的背面相对的目标面对侧，其中所述源分配板包括多个第一特征，使得沿着给定第一直径的第一径向RF分配路径的第一距离大约等于第二特征沿着给定的第一直径的相对的第二径向RF分配路径的距离; 以及与所述源分配板的目标相对侧相对的并且具有围绕所述中心轴线设置并对应于所述多个第一特征的多个第二特征的接地板，其中沿着给定的第二部分的第一径向RF返回路径的第三距离直径约等于沿着给定的第二直径的相对的第二径向RF返回路径的第四距离。

4. 发明申请

US20110240464A1 APPARATUS FOR PHYSICAL VAPOR DEPOSITION HAVING CENTRALLY FED RF ENERGY 有权
标题翻译：具有中央射频能量的物理蒸气沉积装置
公开(公告)号：US20110240464A1
公开(公告)日：2011-10-06
申请号：US13048440
申请日：2011-03-15
申请人： MUHAMMAD RASHEED , LARA HAWRYLCHAK , MICHAEL S. COX , DONNY YOUNG , KIRANKUMAR SAVANDAIAH , ALAN RITCHIE
发明人： MUHAMMAD RASHEED , LARA HAWRYLCHAK , MICHAEL S. COX , DONNY YOUNG , KIRANKUMAR SAVANDAIAH , ALAN RITCHIE
IPC分类号： C23C14/34
CPC分类号： H01J37/3405 , H01J37/3411
摘要： In some embodiments, a feed structure to couple RF energy to a target may include a body having a first end to receive RF energy and a second end opposite the first end to couple the RF energy to a target, the body further having a central opening disposed through the body from the first end to the second end; a first member coupled to the body at the first end, wherein the first member comprises a first element circumscribing the body and extending radially outward from the body, and one or more terminals disposed in the first member to receive RF energy from an RF power source; and a source distribution plate coupled to the second end of the body to distribute the RF energy to the target, wherein the source distribution plate includes a hole disposed through the plate and aligned with the central opening of the body.
摘要翻译：在一些实施例中，将RF能量耦合到目标的馈送结构可以包括具有接收RF能量的第一端的主体和与第一端相对的第二端以将RF能量耦合到目标，所述主体还具有中心开口从第一端至第二端穿过本体; 第一构件，其在所述第一端处联接到所述主体，其中所述第一构件包括限定所述主体并且从所述主体径向向外延伸的第一元件以及设置在所述第一构件中以从RF电源接收RF能量的一个或多个端子 ; 以及耦合到所述主体的第二端以将RF能量分配到所述目标的源分布板，其中所述源分配板包括穿过所述板布置并与所述主体的中心开口对准的孔。

5. 发明申请

US20130256128A1 PROCESS KIT WITH PLASMA-LIMITING GAP 有权
标题翻译：具有等离子体差距的工艺包
公开(公告)号：US20130256128A1
公开(公告)日：2013-10-03
申请号：US13435956
申请日：2012-03-30
申请人： ALAN RITCHIE , DONNY YOUNG
发明人： ALAN RITCHIE , DONNY YOUNG
IPC分类号： C23C14/34
CPC分类号： C23C14/34 , H01J37/32495 , H01J37/32642 , H01J37/32651 , H01J37/3405
摘要： Apparatus for processing substrates are provided herein. In some embodiments, an apparatus includes a process kit comprising a shield having one or more sidewalls configured to surround a first volume, the first volume disposed within an inner volume of a process chamber; and a first ring moveable between a first position, wherein the first ring rests on the shield, and a second position, wherein a gap is formed between an outer surface of the first ring and an inner surface of the one or more sidewalls, wherein a width of the gap is less than about two plasma sheath widths for a plasma formed at a frequency of about 40 MHz or higher and at a pressure of about 140 mTorr or lower.
摘要翻译：本文提供了处理基板的设备。在一些实施例中，装置包括处理套件，其包括具有一个或多个侧壁的屏蔽件，该侧壁被配置为围绕第一容积，第一容积设置在处理室的内部容积内; 以及第一环，其可在第一位置和第二位置之间移动，第一位置在第一位置和第二位置之间，其中在第一环的外表面和一个或多个侧壁的内表面之间形成间隙，其中，在约40MHz或更高的频率和约140mTorr或更低的压力下形成的等离子体的间隙宽度小于约两个等离子体护套宽度。

6. 发明申请

US20130256126A1 SUBSTRATE SUPPORT WITH RADIO FREQUENCY (RF) RETURN PATH 有权
标题翻译：基站支持无线射频（RF）返回路径
公开(公告)号：US20130256126A1
公开(公告)日：2013-10-03
申请号：US13435766
申请日：2012-03-30
申请人： ALAN RITCHIE , DONNY YOUNG , WEI W. WANG , ANANTHKRISHNA JUPUDI , THANH X. NGUYEN , KIRANKUMAR SAVANDAIAH
发明人： ALAN RITCHIE , DONNY YOUNG , WEI W. WANG , ANANTHKRISHNA JUPUDI , THANH X. NGUYEN , KIRANKUMAR SAVANDAIAH
IPC分类号： C23C14/34
CPC分类号： C23C14/34 , H01J37/32091 , H01J37/321 , H01J37/32623 , H01J37/32651 , H01J37/32706 , H01J37/32715 , H01J37/3405 , H01J37/3411
摘要： Apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate includes a substrate support that may include a dielectric member having a surface to support a substrate thereon; one or more first conductive members disposed below the dielectric member and having a dielectric member facing surface adjacent to the dielectric member; and a second conductive member disposed about and contacting the one or more first conductive members such that RF energy provided to the substrate by an RF source returns to the RF source by traveling radially outward from the substrate support along the dielectric member facing surface of the one or more first conductive members and along a first surface of the second conductive member disposed substantially parallel to a peripheral edge surface of the one or more first conductive members after travelling along the dielectric layer facing surface.
摘要翻译：本文提供了处理基板的设备。在一些实施例中，用于处理衬底的装置包括衬底支撑件，其可以包括具有用于在其上支撑衬底的表面的电介质构件; 一个或多个第一导电构件，其布置在所述电介质构件下方并且具有邻近所述电介质构件的电介质构件面向表面; 以及设置在所述一个或多个第一导电构件周围并且接触所述一个或多个第一导电构件的第二导电构件，使得通过RF源提供给所述衬底的RF能量通过沿着所述衬底支撑件的所述电介质构件面向表面径向向外径向向外移动或更多的第一导电构件，并且沿第一导电构件的第一表面布置成大致平行于一个或多个第一导电构件的沿着电介质层面向表面行进的周边边缘表面。

7. 发明申请

US20110240466A1 PHYSICAL VAPOR DEPOSITION CHAMBER WITH ROTATING MAGNET ASSEMBLY AND CENTRALLY FED RF POWER 有权
标题翻译：具有旋转磁铁组件和中央射频功率的物理蒸气沉积室
公开(公告)号：US20110240466A1
公开(公告)日：2011-10-06
申请号：US13075841
申请日：2011-03-30
申请人： ALAN RITCHIE , KEITH MILLER
发明人： ALAN RITCHIE , KEITH MILLER
IPC分类号： C23C14/35
CPC分类号： H01J37/3405 , H01J37/3455
摘要： Embodiments of the present invention provide improved methods and apparatus for physical vapor deposition (PVD) processing of substrates. In some embodiments, an apparatus for physical vapor deposition (PVD) may include a target assembly having a target comprising a source material to be deposited on a substrate, an opposing source distribution plate disposed opposite a backside of the target and electrically coupled to the target along a peripheral edge of the target, and a cavity disposed between the backside of the target and the source distribution plate; an electrode coupled to the source distribution plate at a point coincident with a central axis of the target; and a magnetron assembly comprising a rotatable magnet disposed within the cavity and having an axis of rotation that is aligned with a central axis of the target assembly, wherein the magnetron assembly is not driven through the electrode.
摘要翻译：本发明的实施例提供了用于衬底的物理气相沉积（PVD）处理的改进的方法和装置。在一些实施例中，用于物理气相沉积（PVD）的设备可以包括目标组件，其具有靶，其包括待沉积在衬底上的源材料，相对的源极分布板，与靶的背面相对并且电耦合到靶沿着靶的外围边缘，以及设置在靶的背面和源分布板之间的空腔; 在与所述目标的中心轴重合的点处耦合到所述源分配板的电极; 以及磁控管组件，其包括设置在所述空腔内并具有与所述目标组件的中心轴线对准的旋转轴线的可旋转磁体，其中所述磁控管组件不被驱动通过所述电极。

8. 发明申请

US20120149192A1 METHODS FOR DEPOSITING METAL IN HIGH ASPECT RATIO FEATURES 有权
标题翻译：用于在高比例特征中沉积金属的方法
公开(公告)号：US20120149192A1
公开(公告)日：2012-06-14
申请号：US13223788
申请日：2011-09-01
申请人： KARL BROWN , ALAN RITCHIE , JOHN PIPITONE , YING RUI , DANIEL J. HOFFMAN
发明人： KARL BROWN , ALAN RITCHIE , JOHN PIPITONE , YING RUI , DANIEL J. HOFFMAN
IPC分类号： H01L21/768
CPC分类号： C23C14/046 , C23C14/185 , C23C14/3492
摘要： Methods of depositing metal in high aspect ratio features are provided herein. In some embodiments, a method of processing a substrate includes applying RF power at VHF frequency to a target comprising metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas, sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms, depositing the ionized metal atoms on a bottom surface of the opening and on a first surface of the substrate, applying a first RF power to redistribute at least some of the deposited metal atoms from the bottom surface and upper surface to sidewalls of the opening, and repeating the deposition the redistribution processes until a first layer of metal is deposited on substantially all surfaces of the opening.
摘要翻译：本文提供了以高纵横比特征沉积金属的方法。在一些实施例中，处理衬底的方法包括以VHF频率将RF功率施加到包括设置在衬底上的PVD室中的金属的靶以形成来自等离子体形成气体的等离子体，使用等离子体溅射来自靶的金属原子同时保持PVD室中的第一压力足以电离溅射的金属原子的主要部分，将离子化的金属原子沉积在开口的底表面上并在衬底的第一表面上，施加第一RF功率以在至少一些沉积的金属原子从开口的底表面和上表面到侧壁，并且重新沉积重新分布过程，直到第一金属层沉积在开口的基本上所有的表面上。

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