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1. 发明授权

US08188512B2 Growth of germanium epitaxial thin film with negative photoconductance characteristics and photodiode using the same 有权
标题翻译：具有负光导特性的锗外延薄膜的生长和使用其的光电二极管
公开(公告)号：US08188512B2
公开(公告)日：2012-05-29
申请号：US12536098
申请日：2009-08-05
申请人： Sang Hoon Kim , Gyung Ock Kim , Dong Woo Suh , Ji Ho Joo
发明人： Sang Hoon Kim , Gyung Ock Kim , Dong Woo Suh , Ji Ho Joo
IPC分类号： H01L31/028 , C03B23/06
CPC分类号： H01L31/1808 , C30B25/10 , C30B25/16 , C30B29/08 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02532 , H01L21/0262 , H01L31/028 , H01L31/103 , Y02E10/547
摘要： A method of growing a germanium (Ge) epitaxial thin film having negative photoconductance characteristics and a photodiode using the same are provided. The method of growing the germanium (Ge) epitaxial thin film includes growing a germanium (Ge) thin film on a silicon substrate at a low temperature, raising the temperature to grow the germanium (Ge) thin film, and growing the germanium (Ge) thin film at a high temperature, wherein each stage of growth is performed using reduced pressure chemical vapor deposition (RPCVD). The three-stage growth method enables formation of a germanium (Ge) epitaxial thin film characterized by alleviated stress on a substrate, a lowered penetrating dislocation density, and reduced surface roughness.
摘要翻译：提供一种生长具有负光导特性的锗（Ge）外延薄膜和使用其的光电二极管的方法。生长锗（Ge）外延薄膜的方法包括在低温下在硅衬底上生长锗（Ge）薄膜，升高温度以生长锗（Ge）薄膜，并使锗（Ge）在高温下的薄膜，其中每个生长阶段使用减压化学气相沉积（RPCVD）进行。三阶段生长方法能够形成特征在于在基板上减轻应力，降低的穿透位错密度和降低的表面粗糙度的锗（Ge）外延薄膜。

2. 发明授权

US08017420B2 Method of forming optical waveguide 有权
标题翻译：光波导形成方法
公开(公告)号：US08017420B2
公开(公告)日：2011-09-13
申请号：US12491443
申请日：2009-06-25
申请人： In-Gyoo Kim , Dong-Woo Suh , Gyung-Ock Kim
发明人： In-Gyoo Kim , Dong-Woo Suh , Gyung-Ock Kim
IPC分类号： H01L21/00
CPC分类号： G02B6/136 , G02B6/132
摘要： Provided is a method of forming optical waveguide. The method includes forming a trench on a semiconductor substrate to define an active portion, and partially oxidizing the active portion. An non-oxidized portion of the active portion is included in a core through which an optical signal passes, and an oxidized portion of the active portion is included in a cladding.
摘要翻译：提供一种形成光波导的方法。该方法包括在半导体衬底上形成沟槽以限定有源部分，并部分氧化活性部分。有源部分的非氧化部分包括在光信号通过的芯中，有源部分的氧化部分包含在包层中。

3. 发明申请

US20100144124A1 METHOD OF GROWING PURE Ge THIN FILM WITH LOW THREADING DISLOCATION DENSITY 审中-公开
标题翻译：生产具有低螺旋位错密度的纯薄膜的方法
公开(公告)号：US20100144124A1
公开(公告)日：2010-06-10
申请号：US12536475
申请日：2009-08-05
申请人： Sang Hoon KIM , Dong Woo Suh , Ji Ho Joo , Gyung Ock Kim , Hyun Tak Kim
发明人： Sang Hoon KIM , Dong Woo Suh , Ji Ho Joo , Gyung Ock Kim , Hyun Tak Kim
IPC分类号： H01L21/205
CPC分类号： H01L21/02532 , C30B25/02 , C30B29/08 , H01L21/02381 , H01L21/0262
摘要： Provided is a method of growing a pure germanium (Ge) thin film with low threading dislocation density using reduced pressure chemical vapor deposition (RPCVD), which includes growing a Ge thin film on a silicon (Si) substrate at a low temperature, performing real-time annealing for a short period of time, and growing the annealed Ge thin film at a high temperature. The grown Ge single crystal thin film can overcome conventional problems of generation of a Si—Ge layer due to Si diffusion, and propagation of misfit dislocation to a high-temperature Ge thin film.
摘要翻译：提供了使用减压化学气相沉积（RPCVD）生长具有低穿透位错密度的纯锗（Ge）薄膜的方法，其包括在低温下在硅（Si）衬底上生长Ge薄膜，实现真实短时间退火，并在高温下生长退火的Ge薄膜。生长的Ge单晶薄膜可以克服由于Si扩散而产生Si-Ge层的常规问题，以及错配位错到高温Ge薄膜的传播。

4. 发明授权

US08183633B2 Semiconductor device and method for forming the same 有权
标题翻译：半导体装置及其形成方法
公开(公告)号：US08183633B2
公开(公告)日：2012-05-22
申请号：US12847974
申请日：2010-07-30
申请人： O-Kyun Kwon , Dong-Woo Suh , Jung-Hyung Pyo , Gyung-Ock Kim
发明人： O-Kyun Kwon , Dong-Woo Suh , Jung-Hyung Pyo , Gyung-Ock Kim
IPC分类号： H01L27/12
CPC分类号： H01L21/76267 , H01L21/76283
摘要： Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.
摘要翻译：提供半导体及其形成方法。该方法包括在衬底中局部形成掩埋绝缘层。蚀刻衬底以形成露出掩埋绝缘层的开口，并且在掩埋绝缘层上形成从衬底至少一个方向间隔开的硅图案。形成第一绝缘层以包围硅图案。

5. 发明授权

US07790567B2 Semiconductor device and method for forming the same 有权
标题翻译：半导体装置及其形成方法
公开(公告)号：US07790567B2
公开(公告)日：2010-09-07
申请号：US12130877
申请日：2008-05-30
申请人： O-Kyun Kwon , Dong-Woo Suh , Jung-Hyung Pyo , Gyung-Ock Kim
发明人： O-Kyun Kwon , Dong-Woo Suh , Jung-Hyung Pyo , Gyung-Ock Kim
IPC分类号： H01L21/76
CPC分类号： H01L21/76267 , H01L21/76283
摘要： Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.
摘要翻译：提供半导体及其形成方法。该方法包括在衬底中局部形成掩埋绝缘层。蚀刻衬底以形成露出掩埋绝缘层的开口，并且在掩埋绝缘层上形成从衬底至少一个方向间隔开的硅图案。形成第一绝缘层以包围硅图案。

6. 发明申请

US20100159674A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100159674A1
公开(公告)日：2010-06-24
申请号：US12488577
申请日：2009-06-21
申请人： In-Gyoo Kim , O-Kyun Kwon , Dong-Woo Suh , Gyung-Ock Kim
发明人： In-Gyoo Kim , O-Kyun Kwon , Dong-Woo Suh , Gyung-Ock Kim
IPC分类号： H01L21/20
CPC分类号： H01L21/2007 , H01L21/76251
摘要： Provided is a method of fabricating a semiconductor device. The method includes forming a first layer, a second layer, an ion implantation layer between the first and second layers, and an anti-oxidation layer on the second layer, and performing a heat treating process to form an insulating layer between the first and second layers while preventing loss of the second layer using the anti-oxidation layer.
摘要翻译：提供一种制造半导体器件的方法。该方法包括在第一层和第二层之间形成第一层，第二层，离子注入层和第二层上的抗氧化层，并进行热处理工艺，以在第一层和第二层之间形成绝缘层同时防止使用抗氧化层损失第二层。

7. 发明申请

US20090152673A1 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME 有权
标题翻译：半导体器件及其形成方法
公开(公告)号：US20090152673A1
公开(公告)日：2009-06-18
申请号：US12130877
申请日：2008-05-30
申请人： O-Kyun KWON , Dong-Woo SUH , Junghyung PYO , Gyung-Ock KIM
发明人： O-Kyun KWON , Dong-Woo SUH , Junghyung PYO , Gyung-Ock KIM
IPC分类号： H01L23/482 , H01L21/76
CPC分类号： H01L21/76267 , H01L21/76283
摘要： Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.
摘要翻译：提供半导体及其形成方法。该方法包括在衬底中局部形成掩埋绝缘层。蚀刻衬底以形成露出掩埋绝缘层的开口，并且在掩埋绝缘层上形成从衬底至少一个方向间隔开的硅图案。形成第一绝缘层以包围硅图案。

8. 发明授权

US07399420B2 Method of fabricating stamper and focusing grating coupler using the same 失效
标题翻译：使用其制造压模和聚焦光栅耦合器的方法
公开(公告)号：US07399420B2
公开(公告)日：2008-07-15
申请号：US10803921
申请日：2004-03-19
申请人： Mun Cheol Paek , Dong Woo Suh , Ho Jun Ryu , Hyeon Bong Pyo , Yong Woo Park
发明人： Mun Cheol Paek , Dong Woo Suh , Ho Jun Ryu , Hyeon Bong Pyo , Yong Woo Park
IPC分类号： B29D11/00 , G02B6/26
CPC分类号： G11B7/263 , B29C59/022 , B29C2059/023 , B29D17/005 , B29L2011/00 , G02B5/1809 , G11B7/261
摘要： Provided are a stamper fabricated by using an embossing master and a focusing grating coupler fabricated by using the stamper, which is applicable to a subminiature pickup head for a mobile optic disk, whereby it is possible to reduce a weight and a volume of the pickup head with a simple process and low cost and to apply for mass production.
摘要翻译：提供一种通过使用通过使用压模制造的压花母版和聚焦光栅耦合器制造的压模，其适用于用于移动光盘的超小型拾取头，由此可以减小拾取头的重量和体积具有工艺简单，成本低廉，适用于批量生产。

9. 发明授权

US06999660B2 Highly efficient focusing waveguide grating coupler using leaky mode 失效
标题翻译：使用泄漏模式的高效聚焦波导光栅耦合器
公开(公告)号：US06999660B2
公开(公告)日：2006-02-14
申请号：US10749349
申请日：2003-12-31
申请人： Yongwoo Park , Yeungjoon Sohn , Mun-Cheol Paek , Dong Woo Suh , Hojun Ryu , Hyeon-Bong Pyo
发明人： Yongwoo Park , Yeungjoon Sohn , Mun-Cheol Paek , Dong Woo Suh , Hojun Ryu , Hyeon-Bong Pyo
IPC分类号： G02B6/34
CPC分类号： G02B6/34 , G02B6/122 , G02B6/124
摘要： Provided is a focusing waveguide grating coupler using a leaky mode which can form single output beam while relieving the dependency on manufacturing processes. The focusing waveguide grating coupler of the present research includes: a substrate having a first refraction index n1; a first core layer having a second refraction index n2, the first core layer being formed on the substrate; a second core layer having a third refraction index n3, the second core layer being formed on the first core layer apart from the first core layer with a space d in between; a first cladding layer having a fourth refraction index n4, the first cladding layer being formed on the second core layer; a second cladding layer having a fifth refraction index n5, the second cladding layer being formed on the first cladding layer and inserted between the first core layer and the second core layer; and a Fresnel lens positioned on the second cladding layer, wherein the refractive indexes satisfy conditions of n5>(n2, n3)>n1 and n5>n4; and light inputted through the first and second core layers to the Fresnel lens as radiated leaky beam by a leaky mode formed according to the conditions, and the leaky beam forms an optical focus by performing single directional coupling.
摘要翻译：提供了一种使用泄漏模式的聚焦波导光栅耦合器，其可以形成单个输出光束，同时减轻对制造工艺的依赖性。本研究的聚焦波导光栅耦合器包括：具有第一折射率n1的衬底; 具有第二折射率n2的第一芯层，所述第一芯层形成在所述基板上; 具有第三折射率n3的第二芯层，所述第二芯层与所述第一芯层分开形成在所述第一芯层上，其间具有空间d; 具有第四折射率n4的第一包层，所述第一包层形成在所述第二芯层上; 具有第五折射率n5的第二包层，所述第二包层形成在所述第一包层上并插入在所述第一芯层和所述第二芯层之间; 和位于第二包覆层上的菲涅尔透镜，其中折射率满足n5>（n2，n3）> n1和n5> n4的条件; 以及通过第一和第二核心层通过根据条件形成的泄漏模式作为辐射泄漏波束通过第一和第二核心层输入到菲涅耳透镜的光，并且通过执行单向耦合来形成光学焦点。

10. 发明申请

US20050008294A1 Highly efficient focusing waveguide grating coupler using leaky mode 失效
标题翻译：使用泄漏模式的高效聚焦波导光栅耦合器
公开(公告)号：US20050008294A1
公开(公告)日：2005-01-13
申请号：US10749349
申请日：2003-12-31
申请人： Yongwoo Park , Yeungjoon Sohn , Mun-Cheol Paek , Dong-Woo Suh , Hojun Ryu , Hyeon-Bong Pyo
发明人： Yongwoo Park , Yeungjoon Sohn , Mun-Cheol Paek , Dong-Woo Suh , Hojun Ryu , Hyeon-Bong Pyo
IPC分类号： G02B6/28 , G02B6/122 , G02B6/124 , G02B6/34
CPC分类号： G02B6/34 , G02B6/122 , G02B6/124
摘要： Provided is a focusing waveguide grating coupler using a leaky mode which can form single output beam while relieving the dependency on manufacturing processes. The focusing waveguide grating coupler of the present research includes: a substrate having a first refraction index n1; a first core layer having a second refraction index n2, the first core layer being formed on the substrate; a second core layer having a third refraction index n3, the second core layer being formed on the first core layer apart from the first core layer with a space d in between; a first cladding layer having a fourth refraction index n4, the first cladding layer being formed on the second core layer; a second cladding layer having a fifth refraction index n5, the second cladding layer being formed on the first cladding layer and inserted between the first core layer and the second core layer; and a Fresnel lens positioned on the second cladding layer, wherein the refractive indexes satisfy conditions of n5>(n2, n3)>n1 and n5>n4; and light inputted through the first and second core layers to the Fresnel lens as radiated leaky beam by a leaky mode formed according to the conditions, and the leaky beam forms an optical focus by performing single directional coupling.
摘要翻译：提供了一种使用泄漏模式的聚焦波导光栅耦合器，其可以形成单个输出光束，同时减轻对制造工艺的依赖性。本研究的聚焦波导光栅耦合器包括：具有第一折射率n1的衬底; 具有第二折射率n2的第一芯层，所述第一芯层形成在所述基板上; 具有第三折射率n3的第二芯层，所述第二芯层与所述第一芯层分开形成在所述第一芯层上，其间具有空间d; 具有第四折射率n4的第一包层，所述第一包层形成在所述第二芯层上; 具有第五折射率n5的第二包层，所述第二包层形成在所述第一包层上并插入在所述第一芯层和所述第二芯层之间; 和位于第二包覆层上的菲涅尔透镜，其中折射率满足n5>（n2，n3）> n1和n5> n4的条件; 以及通过第一和第二核心层通过根据条件形成的泄漏模式作为辐射泄漏波束通过第一和第二核心层输入到菲涅耳透镜的光，并且通过执行单向耦合来形成光学焦点。

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