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    • 4. 发明申请
    • LIQUID CRYSTAL DRIVING DEVICE AND DRIVING METHOD THEREOF
    • 液晶驱动装置及其驱动方法
    • US20110267335A1
    • 2011-11-03
    • US13179680
    • 2011-07-11
    • Dong Hwan LEETae Hyuk KWON
    • Dong Hwan LEETae Hyuk KWON
    • G06F3/038
    • G09G3/3696G09G3/3648G09G2320/0223
    • Disclosed is a liquid crystal driving device, which is without a gate PCB, having improved uniformity of screen, and a driving method thereof. The liquid crystal driving device comprises: a sequence recognition means for recognizing sequence of a pertinent gate driver IC by a pulse width of a vertical start signal inputted in synchronization with a vertical synchronous signal, and generating a Carry signal and location data of the pertinent gate driver IC; and gate-off voltage generation means for receiving a first gate-off voltage and the location data of the pertinent gate driver IC, and outputting a second gate-off voltage which is generated by subtracting a voltage attenuation quantity corresponding to the location data of the gate driver IC from the first gate-off voltage.
    • 公开了一种没有栅极PCB的具有改进的屏幕均匀性的液晶驱动装置及其驱动方法。 液晶驱动装置包括:序列识别装置,用于通过与垂直同步信号同步输入的垂直起始信号的脉冲宽度来识别相关栅极驱动器IC的序列,并产生相应栅极的进位信号和位置数据 驱动IC; 以及栅极截止电压产生装置,用于接收第一栅极截止电压和相关栅极驱动器IC的位置数据,并输出第二栅极截止电压,该第二栅极截止电压是通过减去与所述栅极驱动器IC的位置数据相对应的电压衰减量而产生的 栅极驱动器IC从第一个栅极截止电压。
    • 6. 发明授权
    • Display apparatus
    • 显示装置
    • US07982727B2
    • 2011-07-19
    • US11102175
    • 2005-04-08
    • Dong-Hwan LeeDong-Ho LeeSoo-Jin Kim
    • Dong-Hwan LeeDong-Ho LeeSoo-Jin Kim
    • G09G5/00
    • G02F1/13452G02F2001/13456
    • In a display apparatus, a printed circuit board has a base substrate, a flip chip, and an adhesive member. The flip chip is mounted onto a first face of the base substrate by the adhesive member between the flip chip and the first face of the base substrate. The first display panel is disposed on a second face opposite to the first face of the base substrate, and a second display panel is mounted on the first face of the base substrate with the flip chip. Thus, a chip mounted on the printed circuit board is made smaller and the freed up space can be used to mount the second display panel.
    • 在显示装置中,印刷电路板具有基底基板,倒装芯片和粘合部件。 倒装芯片通过位于倒装芯片和基底基板的第一面之间的粘合部件安装在基底基板的第一面上。 第一显示面板设置在与基底基板的第一面相反的第二面上,第二显示面板通过倒装芯片安装在基底基板的第一面上。 因此,安装在印刷电路板上的芯片更小,并且可以使用释放的空间来安装第二显示面板。
    • 7. 发明申请
    • Method for Preparation of Cross-Condensed Compound Between Amino Acids and Aminoalkylsilane Having Alkoxy Groups Using Microwave
    • 使用微波制备具有烷氧基的氨基酸和氨基烷基硅烷之间交联化合物的方法
    • US20100249444A1
    • 2010-09-30
    • US12739598
    • 2008-02-22
    • Ik Mo LeeDong Hwan LeeHo Sub KimSang Eon Park
    • Ik Mo LeeDong Hwan LeeHo Sub KimSang Eon Park
    • C07F7/10
    • C07F7/1892
    • The present invention provides a method of preparing a cross-condensed compound of an amino-acid derivative and (aminoalkyl) trialkoxysilane using microwave, including: irradiating and heating an amino-acid derivative and (aminoalkyl) trialkoxysilane in a microwave reactor to obtain a reaction product (step 1); and refining the reaction product obtained in the step 1 by removing an unreacted solid material from the reaction product and then leaving the reaction product at room temperature under vacuum to remove excess (aminoalkyl) trialkoxysilane therefrom (step 2). According to the method, since a cross-condensation reaction is performed using microwave, unlike a conventional condensation reaction, economic efficiency is increased due to no catalyst, short reaction time and no solvent. Further, the yield and selectivity of products is increased, and the condensation reaction can be environment-friendly performed because a solvent which can badly influence the environment may not be used.
    • 本发明提供了使用微波制备氨基酸衍生物和(氨基烷基)三烷氧基硅烷的交联稠合化合物的方法,包括:在微波反应器中照射加热氨基酸衍生物和(氨基烷基)三烷氧基硅烷,得到反应 产品(步骤1); 并通过从反应产物中除去未反应的固体物质,然后在真空下将反应产物在室温下离心以从其中除去过量的(氨基烷基)三烷氧基硅烷,从而精制步骤1中获得的反应产物(步骤2)。 根据该方法,由于使用微波进行交联缩合反应,与常规的缩合反应不同,由于没有催化剂,反应时间短,无溶剂,经济效率提高。 此外,产物的产率和选择性提高,并且缩合反应可以是环境友好的,因为可能不会使用可能严重影响环境的溶剂。
    • 8. 发明授权
    • Metal line of semiconductor device and method of fabricating the same
    • 半导体器件的金属线及其制造方法
    • US07741717B2
    • 2010-06-22
    • US11771214
    • 2007-06-29
    • Young Ok HongDong Hwan Lee
    • Young Ok HongDong Hwan Lee
    • H01L23/48H01L23/52H01L29/40
    • H01L21/76816H01L27/115H01L27/11521H01L27/11524H01L2924/0002H01L2924/00
    • A metal line of a semiconductor device comprising contact plugs, a plurality of first trenches, first metal lines, a plurality of second trenches, and second metal lines. The contact plugs are formed over a semiconductor substrate and are insulated from each other by a first insulating layer. The plurality of first trenches are formed in the first insulating layer and are connected to first contact plugs of the contact plugs. The first metal lines are formed within the first trenches and are connected to the first contact plugs. The plurality of second trenches are formed over the first metal lines and the first insulating layer and comprise a second insulating layer connected to second contact plugs of the contact plugs. The second metal lines are formed within the second trenches and are connected to the second contact plugs.
    • 包括接触插塞,多个第一沟槽,第一金属线,多个第二沟槽和第二金属线的半导体器件的金属线。 接触插塞形成在半导体衬底之上并且通过第一绝缘层彼此绝缘。 多个第一沟槽形成在第一绝缘层中并连接到接触插塞的第一接触插塞。 第一金属线形成在第一沟槽内并连接到第一接触插塞。 多个第二沟槽形成在第一金属线和第一绝缘层之上,并且包括连接到接触插塞的第二接触插塞的第二绝缘层。 第二金属线形成在第二沟槽内并连接到第二接触插塞。