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    • 4. 发明申请
    • Semiconductor memory device
    • 半导体存储器件
    • US20060120177A1
    • 2006-06-08
    • US11267805
    • 2005-11-04
    • Dong-Hak Shin
    • Dong-Hak Shin
    • G11C5/14
    • G11C11/417G11C5/145
    • A semiconductor memory device includes: a memory cell array including a plurality of memory cell array blocks in turn including first and second memory cell array blocks, the number of word lines activated when the first memory cell array blocks are selected being greater than the number of word lines activated when the second memory cell array blocks are selected; a first boosting voltage generating portion generating a first driving signal when the semiconductor device operates in an active mode and supplying a boosting voltage that is higher than a power supply voltage to an output terminal in response to the first driving signal; and a second boosting voltage generating portion including first and second boosting voltage generators, the first boosting voltage generator generating a second driving signal when a level of the boosting voltage of the output terminal is below a target level in the active mode and pumping the boosting voltage in response to the second driving signal, the second boosting voltage generator pumping the boosting voltage in response to the first driving signal when the first memory cell array blocks are selected and pumping the boosting voltage in response to the second driving signal when the second memory cell array blocks are selected. Thus, the semiconductor memory device can constantly maintain the level of the boosting voltage regardless of the location of the selected memory cell array block, thereby preventing reduction of device life span or degradation of characteristics resulting from drop in the boosting voltage.
    • 半导体存储器件包括:包括多个存储单元阵列块的存储单元阵列,其又包括第一和第二存储单元阵列块,当选择第一存储单元阵列块时激活的字线数量大于 当选择第二存储单元阵列块时激活字线; 第一升压电压产生部分,当所述半导体器件以活动模式工作时产生第一驱动信号,并且响应于所述第一驱动信号向输出端提供高于电源电压的升压电压; 以及包括第一和第二升压电压发生器的第二升压电压产生部分,当所述输出端子的升压电压的电平低于所述激活模式中的目标电平时,所述第一升压电压发生器产生第二驱动信号,并且将所述升压电压 响应于第二驱动信号,第二升压电压发生器在选择第一存储单元阵列块时响应于第一驱动信号而泵浦升压电压,并且当第二存储器单元响应于第二驱动信号而泵送升压电压 选择阵列块。 因此,无论选择的存储单元阵列块的位置如何,半导体存储器件可以恒定地保持升压电压的水平,从而防止器件寿命的缩短或由升压电压下降引起的特性的降低。
    • 8. 发明授权
    • Optical cross-connect device
    • 光交叉设备
    • US07013060B2
    • 2006-03-14
    • US11182143
    • 2005-07-15
    • Teruya SugiyamaMitsuteru InoueDong-Hak ShinHitoshi Masuda
    • Teruya SugiyamaMitsuteru InoueDong-Hak ShinHitoshi Masuda
    • G02B6/26G02B6/42
    • G02B5/32G02B6/3556G02B6/356G02F1/0338G11C13/042H04Q11/0005H04Q2011/0028H04Q2011/0035H04Q2011/0039
    • An optic switch for cross-connecting input light signals incoming from inlet fiber cables to outlet fiber cables is disclosed that makes use of a holographic filter (5) having a series of preformed different speckle patterns, each in the form of a hologram (H1, H2, . . . ). Associated with input light signals guided past respective inlet passages (4in) of a multimode waveguide (4), different speckle patterns are formed by applying different control voltages across respective electrode pairs (10, 10a) provided thereon. These speckle patterns past a single outlet passage (4out) of the multimode waveguide (4) into which the inlet passages (4in) converge are joined together and enter the holographic filter (5) in which an input light signal is selectively switched, addressed and cross-connected to an outlet waveguide (2) through a region thereof where a formed speckle pattern coincides with a preformed speckle pattern. The multi mode waveguides (4) is formed in, e.g., a LiNbO3 photorefractive substrate (3).
    • 公开了一种用于交叉连接从入口光缆到出口光纤电缆的输入光信号的光开关,其利用具有一系列预制的不同散斑图案的全息滤光片(5),每个都具有全息图形式(H < SUB> 1,H 2,...,...)。 与通过多模波导(4)的相应入口通道(4 in)引导的输入光信号相关联,通过在其上提供的各个电极对(10,10a)施加不同的控制电压来形成不同的散斑图案。 通过入口通道(4 in)会聚在其中的多模波导(4)的单个出口通道(4 out)上的这些斑点图案被连接在一起并进入选择性地切换输入光信号的全息滤光器(5) 寻址并通过其出口波导(2)交叉连接,其中形成的斑点图案与预先形成的斑点图案重合。 多模波导(4)形成在例如LiNbO 3光折射基板(3)中。