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    • 1. 发明授权
    • Stride enhancer for high speed memory accesses with line fetching mode
and normal mode employing boundary crossing determination
    • 跨线增强器用于线速提取模式的高速存储器存取和采用边界交叉确定的正常模式
    • US5333291A
    • 1994-07-26
    • US717772
    • 1991-06-14
    • Warren W. GrunbokDonald W. PriceDe Tran
    • Warren W. GrunbokDonald W. PriceDe Tran
    • G06F9/38G06F12/02G06F12/06G06F12/08
    • G06F12/0886G06F12/0207G06F12/0607
    • A stride enhancer provides high memory bandwidth on strides greater than one and minimizes requests to memory. The basic memory module (BSM) design uses line fetches as the basic cache complex fetch mechanism and allows operation of the BSM to be stride independent. In the preferred implementation, the BSM has two fetch modes; a normal mode and a line fetch mode. In the normal mode, a quadword (QW) is fetched as in the conventional design. In the line fetch mode, all double words (DWs) within the referenced line are returned to the storage control element (SCE) at two DWs per cycle for strides one through eight (twice the conventional bandwidth) or at least one DW per cycle for all other strides (equal to the conventional bandwidth). This is accomplished with two DW busses rather than a single QW bus and by interleaving DW storage locations within the BSM. In line fetch mode for strides one through eight, DWs are read out according to the stride on the two DW busses.
    • 步进增强器在大于1的步幅上提供高存储器带宽,并且最小化对存储器的请求。 基本内存模块(BSM)设计使用线取出作为基本缓存复制提取机制,允许BSM独立运行。 在优选实现中,BSM具有两种提取模式; 正常模式和线取模式。 在正常模式下,如传统设计那样获取四字(QW)。 在线取模式下,参考线中的所有双字(DW)将以每个循环两个DW返回到存储控制元件(SCE),以用于步幅1到8(传统带宽的两倍)或每个周期至少一个DW 所有其他步骤(等于传统带宽)。 这是通过两个DW总线而不是单个QW总线和通过交织BSM内的DW存储位置来实现的。 在一步到八步的直线取出模式下,根据两条DW总线上的步幅读出DW。
    • 4. 发明授权
    • Synergistic multiple bit error correction for memory of array chips
    • 用于阵列芯片存储器的协同多位纠错
    • US5418796A
    • 1995-05-23
    • US675994
    • 1991-03-26
    • Donald W. PriceYee-Ming Ting
    • Donald W. PriceYee-Ming Ting
    • G06F11/10G06F12/16H03M13/00
    • G06F11/1028
    • A two-level multiple bit error correction scheme includes at the first level a memory chip with a memory error detection capability that produces a chip error signal (CES) when it detects errors in the bits leaving that chip and at the second level an off-chip ECC facility which interprets generated syndrome bits and chip error signals in order to determine which bits are bad. There are two types of codes distinguished by the absence or presence of parity bits. The use of parity bits allows for the detection of single bit errors in data read from the chip. Therefore, the CES is active only for detected multiple bit errors. Chips not using parity bits are less expensive, but the CES must be active for both single bit and multiple bit errors.
    • 两级多位错误校正方案在第一级包括具有存储器错误检测能力的存储器芯片,当存储器芯片检测到离开该芯片的位中的错误并且在第二级处产生偏移信号时产生芯片误差信号(CES) 芯片ECC设备,其解释生成的校正子位和码片错误信号,以便确定哪些位是坏的。 有两种类型的代码是由不存在或存在奇偶校验位来区分的。 奇偶校验位的使用允许检测从芯片读取的数据中的单位错误。 因此,CES只对检测到的多个位错误有效。 不使用奇偶校验位的芯片成本较低,但CES必须对单位和多位错误都有效。